Abstract: This invention relates to a semiconductor laser apparatus having a structure to prevent corrosion in a refrigerant flow path of a heat sink and cool stably a semiconductor laser array over a long period. The semiconductor laser apparatus has a semiconductor laser stack, a refrigerant supplier, an insulating piping, and a refrigerant. The refrigerant supplier supplies the refrigerant to the semiconductor laser stack. The refrigerant is comprised of fluorocarbon. The insulating piping is an insulating piping with flexibility. An grounded conductive material is arranged inside the insulating piping. The conductive material operates to remove static electricity generated where the refrigerant flows inside the insulating piping.

Abstract: The present invention relates to a semiconductor laser apparatus having a structure for preventing the corrosion of a refrigerant flow path in a heat sink and for cooling a semiconductor laser array stably over a long period of time. The semiconductor laser apparatus comprises a semiconductor laser stack in which a plurality of semiconductor laser units are stacked, a refrigerant supplier, a piping for connecting these components, and a refrigerant flowing through these components. The refrigerant supplier supplies the refrigerant to the semiconductor laser stack. The refrigerant is comprised of fluorocarbon. Each of the semiconductor laser units is constituted by a pair of a semiconductor laser array and a heat sink. The heat sink has a refrigerant flow path.

Abstract: An object of the present invention is to provide a method for producing a hermetically sealed container, which method comprises conducting hermetic sealing of a container for beverage or food using a laser welding method, whereby the process speed of the sealing process can be made fast, strict control of the scanning position of laser spots is unnecessary, partial oversupply of energy does not occur easily, and there is no reduction in the welding area or welding strength per area due to the gathering of water drops.

Abstract: A fuel electrode catalyst includes: a solid solution of platinum (Pt) and molybdenum (Mo), a crystal structure of the solid solution being a face-centered cubic structure, and a component ratio of the molybdenum (Mo) in the solid solution being from 10 atom % (at %) to 20 atom % (at %), and a method for producing a fuel electrode catalyst, includes: generating platinum hydrate and molybdenum oxide from chloroplatinic acid (H2PtCl6) and sodium molybdate dihydrate (Na2MoO4.2H2O); reducing the platinum hydrate and the molybdenum oxide; and therewith solid-solving molybdenum (Mo) into platinum (Pt).

Abstract: The present invention relates to a semiconductor laser apparatus having a metal body which efficiently cools a semiconductor laser element, in which joining of copper-made members coated with DLC layers and prevention of corrosion in the vicinity of joined portions are possible. The semiconductor laser apparatus has a metal body as a heat sink for cooling the semiconductor laser element. The metal body is constituted by a plurality of copper-made members, and the surfaces of each copper-made members are continuously coated with a diamond carbon layer except for regions corresponding to an exposed region in which the semiconductor laser element is mounted.

Abstract: A solid-state laser apparatus which can improve its durability is provide. In the solid-state laser apparatus 1, a main pipe 11 for circulating a coolant through a solid-state laser medium 3 is provided with a heat exchanger 14, whereby the laser medium 3 is prevented from raising its temperature. When the coolant becomes acidic or alkaline, a controller 24 controls a flow regulating valve 23, so as to increase the flow rate of the coolant flowing into a bypass pipe 21 provided with a deionizing filter 22, whereby the acidity or alkalinity of the coolant can be weakened. This can prevent the coolant from deteriorating a predetermined part of the laser apparatus 3, and thus can improve the durability of the solid-state laser apparatus 1.

Abstract: An optical condenser device has light sources (10, 20) and an optical combiner (30). Each light source (10, 20) includes a semiconductor laser array (12, 22), a collimator lens (16, 26) and a beam converter (18, 28). The optical combiner (30) combines the beams from the light sources (10, 20). The spread of the beams in planes perpendicular to the direction of alignment of the active layers (14, 24) is restrained by the refraction of the collimator lenses (16, 26). The transverse sections of the respective beams are rotated by substantially 90° by the beam converters (18, 28). The spread of the beams in the direction of alignment of the active layers is thus restrained and crossing of adjacent beams becomes unlikely to occur.

Abstract: A semiconductor laser device 1 comprises: a heat sink 20, in turn comprising a main cooler unit 21, formed by joining metal members, a fluid channel 30, formed inside the main cooler unit 21, a cooling region 23 on an outer wall surface 22, and a resin layer 40, being continuously coated onto the outer wall surface 22 and an inner wall surface 33 with the exception of the cooling region 23; and a semiconductor laser element 80, positioned at the cooling region 23 with thermal contact with the outer wall surface 22 being maintained. By continuously coating the outer wall surface 22 and the inner wall surface 33 with the resin layer 40 with the exception of the cooling region 23, prevention of corrosion near portions at which the outer wall surface and the inner wall surface contact each other is realized.

Abstract: In an active layer 15 of a semiconductor laser device 3, a refractive index type main waveguide 4 is formed by a ridge portion 9a of a p-type clad layer 17. Side surfaces 4g and 4h of the main waveguide 4 form a relative angle ?, based on a total reflection critical angle ?c at the side surfaces 4g and 4h, with respect to a light emitting surface 1a and a light reflecting surface 1b. The main waveguide 4 is separated by predetermined distances from the light emitting surface 1a and the light reflecting surface 1b, and optical path portions 8a and 8b, for making a laser light L1 pass through, are disposed between one end of the main waveguide 4 and the light emitting surface 1a and between the other end of the main waveguide 4 and the light reflecting surface 1b. The optical path portions 8a and 8b are gain type waveguides and emit light components L2 and L3, which, among the light passing through the optical path portions 8a and 8b, deviate from a direction of a predetermined axis A, to the exterior.

Abstract: A laser apparatus 10 includes: a laser medium 11 arranged between a pair of reflecting means 12A and 12B of an optical resonator 12 and adapted to be excited to emit light; a saturable absorber 14 arranged on the optical axis L of the optical resonator 12 between the pair of reflecting means, the transmissivity thereof being adapted to increase with the absorption of emitted light 21 from the laser medium; and an excitation light source unit 13 adapted to output light 22 having a wavelength that excites the laser medium. The saturable absorber 14 is a crystalline body having first to third mutually perpendicular crystallographic axes and is arranged in the optical resonator 12 in such a manner as to have different transmissivities for emitted light in two mutually perpendicular polarization directions.

Abstract: A fuel cell comprising a cathode catalyst layer, an anode catalyst layer including a conductive perfluoro-binder having a micellar structure formed by outwardly orienting hydrophobic (lipophilic) groups and inwardly orienting hydrophilic groups, and a proton conductive membrane provided between the cathode catalyst layer and the anode catalyst layer.

Abstract: Guard electrodes 2 which are electrically connected with a conductive portion of a cooling water passage 23 through connection lines 3 are respectively provided in the middle of a water inlet pipe 1 connected with a water inlet master pipe 10 and a water outlet pipe 6 connected with a water outlet master pipe 13 in M pieces of semiconductor laser units 4. At this time, since the guard electrode 2 has a potential equal to the conductive portion of the cooling water passage 23, the electric current hardly flows between the guard electrode 2 and the conductive portion of the cooling water passage 23. As a result, rusting is inhibited in the M pieces of semiconductor laser units 4, and a clogged piping is prevented in the cooling water passage 23.

Abstract: A semiconductor laser device 1 comprises: a heat sink 20, in turn comprising a main cooler unit 21, formed by joining metal members, a fluid channel 30, formed inside the main cooler unit 21, a cooling region 23 on an outer wall surface 22, and a resin layer 40, being continuously coated onto the outer wall surface 22 and an inner wall surface 33 with the exception of the cooling region 23; and a semiconductor laser element 80, positioned at the cooling region 23 with thermal contact with the outer wall surface 22 being maintained. By continuously coating the outer wall surface 22 and the inner wall surface 33 with the resin layer 40 with the exception of the cooling region 23, prevention of corrosion near portions at which the outer wall surface and the inner wall surface contact each other is realized.

Abstract: A semiconductor laser device 3 includes an n-type clad layer 13, an active layer 15, and a p-type clad layer 17. The p-type clad layer 17 has a ridge portion 9 that forms a waveguide 4 in the active layer 15. The waveguide 4 extends along a central axial line B that is curved at a substantially constant curvature (curvature radius R). In such a waveguide 4, of the light components that resonate inside the waveguide 4, light components of higher spatial transverse mode order are greater in loss. Laser oscillations of high-order transverse modes can thus be suppressed while maintaining laser oscillations of low-order transverse modes. A semiconductor laser device and a semiconductor laser device array, which can emit laser light of comparatively high intensity and with which high-order transverse modes can be suppressed, are thereby realized.

Abstract: The present invention relates to a semiconductor laser element and the like which can efficiently emit laser beams at a small emission angle using a simpler configuration. The semiconductor laser element has a structure where an n-type cladding layer, active layer and p-type cladding layer are sequentially laminated. The p-type cladding layer has a ridge portion for forming a refractive index type waveguide in the active layer. The ridge portion, at least the portion excluding the edges, extends in a direction crossing each normal line of both end faces of the refractive index type waveguide, which corresponds to the light emitting face and light reflecting face respectively, at an angle ?, which is equal to or less than the complementary angle ?c of the total reflection critical angle on the side face of the refractive index type waveguide.

Abstract: This invention relates to a semiconductor laser apparatus having a structure to prevent corrosion in a refrigerant flow path of a heat sink and cool stably a semiconductor laser array over a long period. The semiconductor laser apparatus has a semiconductor laser stack, a refrigerant supplier, an insulating piping, and a refrigerant. The refrigerant supplier supplies the refrigerant to the semiconductor laser stack. The refrigerant is comprised of fluorocarbon. The insulating piping is an insulating piping with flexibility. An grounded conductive material is arranged inside the insulating piping. The conductive material operates to remove static electricity generated where the refrigerant flows inside the insulating piping.

Abstract: The semiconductor laser device 1A has a semiconductor laser array 3 including a plurality of active layers 2 arranged in parallel along a slow direction, and outputs laser beams from the front end face 2a side of the active layers 2. The semiconductor laser device 1A comprises a collimating lens 5 that collimates laser beams L1 outputted from the respective rear end faces 2b of the active layers 2 within a plane orthogonal to the slow axis, and a reflecting mirror 9 that feeds back parts of the laser beams L2 outputted from the collimating lens 5 to the respective active layers 2 via the collimating lens 5.

Abstract: A semiconductor device has first and second III-V compound semiconductor layers one of which functions as a photosensitive layer or as a light emitting layer, which are doped with a p-type impurity in a low concentration, and which are joined to each other to make a heterojunction. An energy gap of the second III-V compound semiconductor layer is smaller than that of the first III-V compound semiconductor layer and the p-type dopant in each semiconductor layer is Be or C. At this time, the second III-V compound semiconductor layer may be deposited on the first III-V compound semiconductor layer. The first III-V compound semiconductor layer and the second III-V compound semiconductor layer may contain at least one from each group of (In, Ga, Al) and (As, P, N).

Abstract: An electrode membrane structure includes a solid electrolyte membrane of a polymer material, and a fuel electrode and an air electrode stacked on both sides of the solid electrolyte membrane. The fuel electrode is formed of an anode catalyst layer and a fuel electrode collector, and the air electrode is formed of a cathode catalyst layer and an air electrode collector. At the backside of the fuel electrode collector, a fuel tank is defined between a casing and a fuel holding film. The interior of the fuel tank is divided into a plurality of divisions by a partition to uniformly distribute liquid fuel to the fuel electrode. The liquid fuel (methanol) in the fuel tank is absorbed and held by the fuel holding film, is dispersed through the fuel holding film to the fuel electrode.

Abstract: A semiconductor photocathode has first and second III-V compound semiconductor layers doped with a p-type impurity and joined to each other to make a heterojunction. The second III-V compound semiconductor layer functions as a light absorbing layer, an energy gap of the second III-V compound semiconductor layer is smaller than that of the first III-V compound semiconductor layer, and Be or C is used as the p-type dopant in each semiconductor layer. At this time, the second III-V compound semiconductor layer may be deposited on the first III-V compound semiconductor layer. The first III-V compound semiconductor layer and the second III-V compound semiconductor layer may contain at least one from each group of (In, Ga, Al) and (As, P, N).