Abstract: A store terminal executes a process including a step S500 for determining whether or not to receive the allocation fee and a step S502 for determining whether or not there is a request for termination of use, and further including, when the allocation fee is received (YES in S500) and it is determined that there is a request for termination of use (YES in S502), a step S504 for acquiring a usage time, a step S506 for setting a discount amount, a step S508 for setting a usage fee, and a step S510 for executing a checkout process.

Abstract: When data is to be stored in or transferred to a storage system including a controller, the controller causes a selected offload instance to compress or to decompress the data to be stored in or to be transferred to the storage system, the selected offload instance being one or more offload instances that support a specific compression scheme and to which a compression or decompression load is to be offloaded.

Abstract: A storage system includes a plurality of nodes each of which includes a processor, in which when a replication source volume in a replication source storage system connected to the storage system is replicated to a plurality of nodes of the storage system, any one of the processors generates a first replicated volume by replicating the replication source volume of the replication source storage system in a first node among the plurality of nodes, and generates a second replicated volume mapped to the first replicated volume in a second node among the plurality of nodes.

Abstract: A detector includes a measurement unit and a battery control unit. The measurement unit measures a measurement value indicating a battery state of a secondary battery. The battery control unit detects a sign of thermal runway in the secondary battery. The measurement unit determines whether a start-up signal is output based on the measurement value in a case where the battery control unit is in a sleep state, and outputs the start-up signal in a case where the start-up signal is output. The battery control unit starts by receiving the start-up signal from the measurement unit when the battery control unit is in the sleep state, executes arithmetic processing on the measurement value received from the measurement unit, and detects the sign of thermal runaway based on a calculated result of the arithmetic processing.

Abstract: A storage system comprises nodes and drives, and includes at least one mounting area to install the drives. A node manages a parity group constituted of the plurality of drives; generates, in a case where a target drive that is installed in a first mounting area and that belongs to a first parity group is to be moved from the first mounting area to a second mounting area, difference information regarding a storage area where data was written into the target drive during a period in which the target drive is moved from the first mounting area to the second mounting area; and restore data written into the storage area by using data stored in other drives than the target drive that belongs to the first parity group based on the difference information, and write the data into the target drive that has been moved to the second mounting area.

Abstract: A semiconductor device is provided. The semiconductor device includes: a substrate with first-conductivity-type impurities; first and second active regions provided on the substrate; a first deep element isolation layer surrounding the first active region; a second deep element isolation layer surrounding the second active region; a suction region surrounding the first and second deep element isolation layers, the suction region including the first-conductivity-type impurities; a well region provided in the substrate between the first and second active regions, the well region including second-conductivity-type impurities different from the first-conductivity-type impurities; a shallow element isolation layer provided between the suction region and the well region; and a guard structure connected to the suction region. The substrate includes a signal path portion that is provided between a top surface of the substrate and the well region, and surrounds an upper portion of the well region.

Abstract: It is made possible to pursue both higher speeds of rebuilds in the distributed RAID scheme and high availability due to acquisition of DE-failure tolerance. A virtual chunk includes k (k is an integer that is equal to or larger than two) virtual parcels including a virtual parcel having user data and a virtual parcel having element data that is redundant data for repairing the user data, the virtual parcels included in the same virtual chunk is stored by mapping the virtual parcels in storage areas of k mutually different physical storage drives among N (k<N) of the physical storage drives, and the maximum value of the numbers of the same virtual parcels to be mapped to the physical storage drives housed in the same drive enclosures is equal to or smaller than a predetermined value.

Abstract: A battery state estimation apparatus calculates a measured DC resistance value of a DC resistance based on a current change amount and a voltage change amount, which are calculated in a predetermined period using measured current value and voltage value. The battery state estimation apparatus further calculates (i) a non-temperature dependent constant and (ii) a constant of a temperature dependent function based on (i) an estimated DC resistance value and (ii) the measured DC resistance value. The estimated DC resistance value is an estimated value of the measured DC resistance value; the estimated DC resistance value is represented as a sum of (i) the non-temperature dependent constant Ra, which indicates a temperature independent component of the DC resistance of the secondary battery, and (ii) the temperature dependent function Rb, which indicates a temperature dependent component of the DC resistance of the secondary battery.

Abstract: Acquiring a snapshot of a logical volume involves generating snapshot-related catalog information including at least a location for storing actual data in the snapshot and a reference destination for identifying another snapshot in parent-child relation to the snapshot, and storing the actual data in the snapshot to the physical storage device and/or to the cloud service. In a case where at least one of a plurality of snapshots is to be designated and restored, catalog information is referenced to identify the storage location of the actual data and acquire the actual data stored in the physical storage device and the actual data not stored in the physical storage device from the cloud service.

Abstract: A storage system comprises nodes and drives, and includes at least one mounting area to install the drives. A node manages a parity group constituted of the plurality of drives; generates, in a case where a target drive that is installed in a first mounting area and that belongs to a first parity group is to be moved from the first mounting area to a second mounting area, difference information regarding a storage area where data was written into the target drive during a period in which the target drive is moved from the first mounting area to the second mounting area; and restore data written into the storage area by using data stored in other drives than the target drive that belongs to the first parity group based on the difference information, and write the data into the target drive that has been moved to the second mounting area.

Abstract: A semiconductor device includes a semiconductor substrate including an active region defined in a well impurity layer having a first conductivity type, a gate electrode on the active region, and a gate insulating layer between the gate electrode and the active region. The active region includes a source region and a drain region at sides of the gate electrode, the source region and the drain region having a second conductivity type, a channel region between the source and drain regions, the channel region having the first conductivity type, a first halo region in contact with the source region and a second halo region in contact with the drain region, the first halo region and the second halo region having the first conductivity type, and a slit well region between the first and second halo regions, the slit well region having the first conductivity type.

Abstract: A storage controller manages a logical volume to which a host makes an access and which manages host data, an addition address space which is mapped with the logical volume and to which host data is added, and a physical address space which is mapped with the addition address space. In the addition address space, different address regions are allocated to respective parity groups. The storage controller selects, as an addition area of host data supplied from the host, an unoccupied address region in the addition address space. As the addition area, a region mapped to a normal status parity group in which data recovery is unnecessary is more preferentially selected than a region allocated to an abnormal status parity group in which data recovery is necessary.

Abstract: The efficiency of the maintenance of a storage apparatus including a plurality of flash drives can be enhanced. In a storage apparatus including a plurality of SSDs and a CPU, the CPU specifies, based on lifetimes of the SSDs depending on amounts of data written to the SSDs, the SSD to be replaced on a scheduled maintenance date, gives notice of the SSD specified to be replaced, and copies data in the SSD to be replaced to another SSD by the scheduled maintenance date on which the replacement is to be performed.

Abstract: A semiconductor device is provided. The semiconductor device includes: a substrate with first-conductivity-type impurities; first and second active regions provided on the substrate; a first deep element isolation layer surrounding the first active region; a second deep element isolation layer surrounding the second active region; a suction region surrounding the first and second deep element isolation layers, the suction region including the first-conductivity-type impurities; a well region provided in the substrate between the first and second active regions, the well region including second-conductivity-type impurities different from the first-conductivity-type impurities; a shallow element isolation layer provided between the suction region and the well region; and a guard structure connected to the suction region. The substrate includes a signal path portion that is provided between a top surface of the substrate and the well region, and surrounds an upper portion of the well region.

Abstract: It is made possible to pursue both higher speeds of rebuilds in the distributed RAID scheme and high availability due to acquisition of DE-failure tolerance. A virtual chunk includes k (k is an integer that is equal to or larger than two) virtual parcels including a virtual parcel having user data and a virtual parcel having element data that is redundant data for repairing the user data, the virtual parcels included in the same virtual chunk is stored by mapping the virtual parcels in storage areas of k mutually different physical storage drives among N (k<N) of the physical storage drives, and the maximum value of the numbers of the same virtual parcels to be mapped to the physical storage drives housed in the same drive enclosures is equal to or smaller than a predetermined value.

Abstract: A storage system including a storage controller and a plurality of storage drives generates parity data from data. Data and parity data configure a stripe. A plurality of stripes configure a parity group allocated with a plurality of storage drives to store the parity group. A first parity group allows the number of storage drives allocated to the parity group to be equal to the number of data pieces configuring each stripe. A second parity group allows the number of storage drives allocated to the parity group to be larger than the number of data pieces configuring each stripe and allows data for each stripe to be distributed and stored in different combinations of storage drives. When the first parity group is converted to the second parity group, a storage drive is added so that it is allocated to the parity group. Data is moved to ensure a free area.

Abstract: Element data stored in a selected virtual device is moved to another virtual device, a virtual parcel allocated to a specific physical device is allocated to a plurality of unallocated areas located in different physical devices, which are mapped to the virtual parcel in which the data is unstored by moving the element data, and all the specific physical devices are brought into an unallocated state.

Abstract: The efficiency of the maintenance of a storage apparatus including a plurality of flash drives can be enhanced. In a storage apparatus including a plurality of SSDs and a CPU, the CPU specifies, based on lifetimes of the SSDs depending on amounts of data written to the SSDs, the SSD to be replaced on a scheduled maintenance date, gives notice of the SSD specified to be replaced, and copies data in the SSD to be replaced to another SSD by the scheduled maintenance date on which the replacement is to be performed.

Abstract: A storage controller of a storage system performs, when failures occur in at least two drives, priority rebuilding and normal rebuilding in parallel, the priority rebuilding being performed so as to perform rebuilding using a reading drive for reading data for restoration of priority rebuild data to be preferentially rebuilt and a writing drive specified for writing the priority rebuild data restored, the normal rebuilding being performed so as to rebuilt normal rebuild data by using a specified reading drive and a specified writing drive.

Abstract: A battery state estimation apparatus calculates a measured DC resistance value of a DC resistance based on a current change amount and a voltage change amount, which are calculated in a predetermined period using measured current value and voltage value. The battery state estimation apparatus further calculates (i) a non-temperature dependent constant and (ii) a constant of a temperature dependent function based on (i) an estimated DC resistance value and (ii) the measured DC resistance value. The estimated DC resistance value is an estimated value of the measured DC resistance value; the estimated DC resistance value is represented as a sum of (i) the non-temperature dependent constant Ra, which indicates a temperature independent component of the DC resistance of the secondary battery, and (ii) the temperature dependent function Rb, which indicates a temperature dependent component of the DC resistance of the secondary battery.