Abstract: A wiring module includes: a functional sheet disposed between a roof panel forming a roof part of a vehicle and an interior member forming a ceiling shape of a vehicle interior to planarly extend over the roof panel and the interior member; and a transmission member provided on the functional sheet, wherein the functional sheet includes a layer having at least one of a heat insulation function, an acoustic insulation function, and a radio wave shielding function, the transmission member is electrically connected to a vehicle-side apparatus mounted to a side of the vehicle, and the transmission member is formed to extend to a position where the transmission member can perform a power supply to or communication with a roof-side apparatus mounted to the roof part in the functional sheet.

Abstract: An image scanning device includes a transport section that transports a document along a transport path; an image scanning unit that is configured to scan an image from the document transported by the transport section; and a first conductive section that is configured to electrically conduct with the image scanning unit. The image scanning unit has a scanning section that is configured to scan the image from the document transported by the transport section, a glass plate that is configured to contact with the document between the scanning section and the transport path, and a second conductive section that is configured to electrically conduct with the glass plate. The image scanning unit is configured to displace along a displacement direction that intersects the transport path.

Abstract: A terminal receives a beam for measurement of a reference signal. At the same time, the terminal receives a beam for reception of data or measurement of a reference signal.

Abstract: A terminal includes: a reception unit configured to receive information indicating an expected angle of UL-AoA (Uplink Angle of Arrival) from a base station; a control unit configured to determine a beam to be applied to UL-PRS (Positioning Reference Signal), based on the information indicating the expected angle of UL-AoA; and a transmission unit configured to transmit the UL-PRS by applying the determined beam.

Abstract: A terminal comprises: a reception unit that receives a reference signal used for a purpose other than a beam failure detection; and a control unit that performs a measurement related to the beam failure detection using the reference signal.

Abstract: A terminal comprises: a reception unit that receives a reference signal used for a purpose other than a measurement related to a reception quality in a physical layer; and a control unit that performs the measurement related to the reception quality in the physical layer using the reference signal.

Abstract: A control device includes a communication interface that receives input data from a terminal device of a first member who is a member of a first family staying in a vehicle, the input data indicating a family composition and a family stress for the first family. A processor of the control device searches a database in which data indicating the family composition and the family stress for each of a plurality of families staying in individual vehicles is registered, using the input data received by the communication interface as a search key, selects a second family from the families based on a search result acquired, and causes the communication interface to transmit notification data that notifies the first member of information for establishing a relationship with a second member who is a member of the second family selected.

Abstract: A terminal includes a receiving unit that receives configuration information for transmitting a random access preamble; and a control unit that configures, when a two-step random access procedure is applied, a time domain resource specified by an index for the two-step random access procedure included in the configuration information, as a time domain resource for transmitting the random access preamble.

Abstract: A terminal according to one aspect of the present disclosure includes a control section that determines, in a radio resource control (RRC) idle state or an RRC inactive state, relaxation of mobility measurement on the basis of a given condition, and a transmitting/receiving section that performs the measurement to which the relaxation is applied. According to one aspect of the present disclosure, it is possible to appropriately perform relaxation of measurement/reporting.

Abstract: A terminal according to one aspect of the present disclosure includes a control section that determines, in a radio resource control (RRC) connected state, relaxation of at least one of measurement and reporting for radio resource management (RRM) on the basis of a given condition, and a transmitting/receiving section that performs at least one of the measurement and reporting to which the relaxation is applied. According to one aspect of the present disclosure, it is possible to appropriately perform relaxation of measurement/reporting.

Abstract: The radio communication node transmits and receives radio signals, and configures transmission and reception frequencies of the radio signals for each radio link or each radio communication node.

Abstract: A semiconductor device for high power application in which a novel semiconductor material having high mass productivity is provided. An oxide semiconductor film is formed, and then, first heat treatment is performed on the exposed oxide semiconductor film in order to reduce impurities such as moisture or hydrogen in the oxide semiconductor film. Next, in order to further reduce impurities such as moisture or hydrogen in the oxide semiconductor film, oxygen is added to the oxide semiconductor film by an ion implantation method, an ion doping method, or the like, and after that, second heat treatment is performed on the exposed oxide semiconductor film.

Abstract: An opening-closing member controller includes a control unit that executes an initialization process to store at least a fully closed position of an opening-closing member. In the initialization process, the control unit closes the opening-closing member, executes entrapment reversing control one or more times when entrapment is detected to open the opening-closing member, and closes the opening-closing member after the entrapment reversing control to store a position where the opening-closing member locks as the fully closed position.

Abstract: The display device includes: a display area; a first peripheral area disposed outside the display area; a second peripheral area disposed outside the first peripheral area; an inner dam disposed in the first peripheral area; an outer dam disposed outside the inner dam in the first peripheral area; a resin part formed between the inner dam and the outer dam so as to be higher than the inner dam and the outer dam; and a sealing film disposed so as to overlap with the display area in a plan view. An outer edge of the sealing film overlaps with the resin part or the outer dam in a plan view.

Abstract: An electronic device is provided and includes first region including organic layer in light emitting element; nitride layers over organic layer; first organic insulating layer over organic layer; and second region including nitride layers, outside first region, wherein second region does not include organic layer and first organic insulating layer, wherein nitride layers include first, second and third nitride layers, wherein first nitride layer is between organic layer and first organic insulating layer in first region, wherein second and third nitride layers are over first nitride layer, and wherein second nitride layer is in contact with first organic insulating layer in first region.

Abstract: A semiconductor device for high power application in which a novel semiconductor material having high mass productivity is provided. An oxide semiconductor film is formed, and then, first heat treatment is performed on the exposed oxide semiconductor film in order to reduce impurities such as moisture or hydrogen in the oxide semiconductor film. Next, in order to further reduce impurities such as moisture or hydrogen in the oxide semiconductor film, oxygen is added to the oxide semiconductor film by an ion implantation method, an ion doping method, or the like, and after that, second heat treatment is performed on the exposed oxide semiconductor film.

Abstract: A highly reliable semiconductor device which includes a thin film transistor having stable electric characteristics, and a manufacturing method thereof. In the manufacturing method of the semiconductor device which includes a thin film transistor where a semiconductor layer including a channel formation region is an oxide semiconductor layer, heat treatment which reduces impurities such as moisture to improve the purity of the oxide semiconductor layer and oxidize the oxide semiconductor layer (heat treatment for dehydration or dehydrogenation) is performed. Not only impurities such as moisture in the oxide semiconductor layer but also those existing in a gate insulating layer are reduced, and impurities such as moisture existing in interfaces between the oxide semiconductor layer and films provided over and under and in contact with the oxide semiconductor layer are reduced.

Abstract: It is an object to provide a highly reliable semiconductor device which includes a thin film transistor having stable electric characteristics. It is another object to manufacture a highly reliable semiconductor device at lower cost with high productivity. In a method for manufacturing a semiconductor device which includes a thin film transistor where a semiconductor layer having a channel formation region, a source region, and a drain region are formed using an oxide semiconductor layer, heat treatment (heat treatment for dehydration or dehydrogenation) is performed so as to improve the purity of the oxide semiconductor layer and reduce impurities such as moisture. Moreover, the oxide semiconductor layer subjected to the heat treatment is slowly cooled under an oxygen atmosphere.

Abstract: An object is to provide a semiconductor device having a structure with which parasitic capacitance between wirings can be sufficiently reduced. An oxide insulating layer serving as a channel protective layer is formed over part of an oxide semiconductor layer overlapping with a gate electrode layer. In the same step as formation of the oxide insulating layer, an oxide insulating layer covering a peripheral portion of the oxide semiconductor layer is formed. The oxide insulating layer which covers the peripheral portion of the oxide semiconductor layer is provided to increase the distance between the gate electrode layer and a wiring layer formed above or in the periphery of the gate electrode layer, whereby parasitic capacitance is reduced.

Abstract: A display device includes a first substrate, a display region with pixels each including a light emitting element above the first substrate, a first inorganic insulating layer covering the display region, a first organic insulating layer on the first inorganic insulating layer, a second inorganic insulating layer on the first organic insulating layer, a second organic insulating layer on the second inorganic insulating layer, a third organic insulating layer a on the second organic insulating layer, acidity of the third organic insulating layer being stronger than acidity of the second organic insulating layer, and a polarizing plate arranged on the third organic insulating layer.