Abstract: A carbon material for a non-aqueous secondary battery containing a graphite capable of occluding and releasing lithium ions, and having a cumulative pore volume at pore diameters in a range of 0.01 ?m to 1 ?m of 0.08 mL/g or more, a roundness, as determined by flow-type particle image analysis, of 0.88 or greater, and a pore diameter to particle diameter ratio (PD/d50 (%)) of 1.8 or less, the ratio being given by equation (1A): PD/d50 (%)=mode pore diameter (PD) in a pore diameter range of 0.01 ?m to 1 ?m in a pore distribution determined by mercury intrusion/volume-based average particle diameter (d50)×100 is provided.

Abstract: A fuel cell electrode catalyst includes: a noble-metal-supported catalyst including a carbon support and a noble metal supported on the carbon support; and a water-repellent material with which the noble-metal-supported catalyst is modified. The carbon support is mesoporous carbon in which a pore volume of pores having a pore size of 2 nm to 5 nm is 2.1 ml/g to 2.4 ml/g. An amount of the water-repellent material is 3% by weight to 7% by weight with respect to a total weight of the mesoporous carbon and the water-repellent material.

Abstract: A carbon material precursor comprises an acrylamide-based polymer having a weight-average molecular weight of 10,000 to 2,000,000 and a polydispersity of the molecular weight (weight-average molecular weight/number-average molecular weight) of 5.0 or less.

Abstract: An electrode catalyst for a fuel cell including: a carbon support; and catalytic metal supported on the carbon support, the catalytic metal being selected from platinum or a platinum alloy, in which the carbon support has a crystallite size of (002) plane of carbon within a range of 5.0 nm or more and has a specific surface area within a range of 95 m2/g to 170 m2/g, and the catalytic metal has a crystallite size of (220) plane of platinum within a range of 4.5 nm or less.

Abstract: A film-forming composition includes a compound including a Si—H bond and an orthoester. The compound preferably includes a structural unit that is a structural unit represented by formula (1-1), a structural unit represented by formula (1-2), or a combination thereof. In the formula (1-1) and the formula (1-2), R1 and R2 each represent a hydroxy group, a halogen atom, or a monovalent organic group having 1 to 20 carbon atoms; and R3 represents a substituted or unsubstituted divalent hydrocarbon group having 1 to 20 carbon atoms that bonds to two Si atoms.

Abstract: An electrode catalyst for a fuel cell including: a carbon support; and catalytic metal supported on the carbon support, the catalytic metal being selected from platinum or a platinum alloy, in which the carbon support has a crystallite size of (002) plane of carbon within a range of 5.0 nm or more and has a specific surface area within a range of 95 m2/g to 170 m2/g, and the catalytic metal has a crystallite size of (220) plane of platinum within a range of 4.5 nm or less.

Abstract: Provided is an electrode catalyst for a fuel cell including: a carbon support; and catalytic metal supported on the carbon support, the catalytic metal being selected from platinum or a platinum alloy, in which the carbon support has a crystallite size of (002) plane of carbon within a range of 5.0 nm or more and has a specific surface area within a range of 95 m2/g to 170 m2/g, and the catalytic metal has a crystallite size of (220) plane of platinum within a range of 4.5 nm or less.

Abstract: There is provided a thermally conductive composite material obtained by dispersing a thermally conductive filler in a matrix. The thermally conductive filler is a mixture including boron nitride particles with an average particle size of 10 ?m to 100 ?m and aluminum nitride particles with an average particle size that is 1/100 to ½ of the average particle size of the boron nitride particles, a content of the boron nitride particles is 60 volume % to 90 volume % with respect to a total amount of the boron nitride particles and the aluminum nitride particles, a content of the thermally conductive filler is 80 volume % to 95 volume % with respect to a total amount of the composite material, and a porosity of the composite material is 10 volume % or less.

Abstract: An antireflection member, including a resin base member; and a particle layer having mesoporous-silica nanoparticles directly fixed to a surface of the resin base member, wherein the nanoparticles are at least partially embedded in the surface of the resin base member, and the nanoparticles are arranged in a mono-particle layer to form the particle layer.

Abstract: A carbon material precursor comprises an acrylamide-based polymer having a weight-average molecular weight of 10,000 to 2,000,000 and a polydispersity of the molecular weight (weight-average molecular weight/number-average molecular weight) of 5.0 or less.

Abstract: A pattern-forming method comprises: forming a resist underlayer film on an upper face side of a substrate; forming a silicon-containing film on an upper face side of the resist underlayer film; and removing the silicon-containing film with a basic aqueous solution. The pattern-forming method does not include, after the forming of the silicon-containing film and before the removing of the silicon-containing film, treating the silicon-containing film with a treatment liquid comprising an acid or a fluorine compound. The silicon-containing film is preferably formed a hydrolytic condensation product of a composition containing a compound represented by formula (1) in an amount of no less than 60 mol % with respect to total silicon compounds. X represents a halogen atom or —OR2, and R2 represents a monovalent organic group.

Abstract: Provided are: a composition for forming a silicon-containing film for EUV lithography capable of forming a silicon-containing film that is superior in an outgas-inhibiting property and enables formation of a resist pattern with a superior collapse-inhibiting property and a favorable configuration; a silicon-containing film for EUV lithography; and a pattern-forming method. The composition for forming a silicon-containing film for EUV lithography contains: a polysiloxane; a compound having an onium cation and a sulfonate anion; and a solvent, in which a sum of atomic masses of the atoms constituting the sulfonate anion is no less than 240, the sulfonate anion has a sulfonate group, and a carbon atom adjacent to the sulfonate group, and a fluorine atom does not bond to the carbon atom.

Abstract: There is provided a thermally conductive composite material obtained by dispersing a thermally conductive filler in a matrix. The thermally conductive filler is a mixture including boron nitride particles with an average particle size of 10 ?m to 100 ?m and aluminum nitride particles with an average particle size that is 1/100 to ½ of the average particle size of the boron nitride particles, a content of the boron nitride particles is 60 volume % to 90 volume % with respect to a total amount of the boron nitride particles and the aluminum nitride particles, a content of the thermally conductive filler is 80 volume % to 95 volume % with respect to a total amount of the composite material, and a porosity of the composite material is 10 volume % or less.

Abstract: A pattern-forming method comprises: forming a resist underlayer film on an upper face side of a substrate; forming a silicon-containing film on an upper face side of the resist underlayer film; and removing at least a part of the resist underlayer film and at least a part of the silicon-containing film with a basic aqueous solution. Preferably, the pattern-forming method further comprises, after the forming of the silicon-containing film and before the removing of the resist underlayer film and the silicon-containing film, forming a resist pattern on an upper face side of the silicon-containing film, and etching the silicon-containing film using the resist pattern as a mask.

Abstract: A pattern-forming method comprises: forming a resist underlayer film on an upper face side of a substrate; forming a silicon-containing film on an upper face side of the resist underlayer film; and removing at least a part of the resist underlayer film and at least a part of the silicon-containing film with a basic aqueous solution. Preferably, the pattern-forming method further comprises, after the forming of the silicon-containing film and before the removing of the resist underlayer film and the silicon-containing film, forming a resist pattern on an upper face side of the silicon-containing film, and etching the silicon-containing film using the resist pattern as a mask.

Abstract: A resist pattern-forming method includes applying a resist underlayer film-forming composition to a substrate to form a resist underlayer film. The resist underlayer film-forming composition includes (A) a polysiloxane. A radiation-sensitive resin composition is applied to the resist underlayer film to form a resist film. The radiation-sensitive resin composition includes (a1) a polymer that changes in polarity and decreases in solubility in an organic solvent due to an acid. The resist film is exposed. The exposed resist film is developed using a developer that includes an organic solvent.