Abstract: A resin composite material including fine graphite particles including plate-like graphite particles, an aromatic vinyl copolymer which is adsorbed on the plate-like graphite particles and which has a vinyl aromatic monomer unit represented by the following formula: —(CH2—CHX)— (X represents a phenyl group, a naphthyl group, an anthracenyl group, or a pyrenyl group, provided that these groups may have substituents); a fibrous inorganic filler; and a resin matrix.

Abstract: A resist pattern-forming method includes applying a resist underlayer film-forming composition to a substrate to form a resist underlayer film. The resist underlayer film-forming composition includes (A) a polysiloxane. A radiation-sensitive resin composition is applied to the resist underlayer film to form a resist film. The radiation-sensitive resin composition includes (a1) a polymer that changes in polarity and decreases in solubility in an organic solvent due to an acid. The resist film is exposed. The exposed resist film is developed using a developer that includes an organic solvent.

Abstract: A resist pattern-forming method includes applying a resist underlayer film-forming composition to a substrate to form a resist underlayer film. The resist underlayer film-forming composition includes (A) a polysiloxane. A radiation-sensitive resin composition is applied to the resist underlayer film to form a resist film. The radiation-sensitive resin composition includes (a1) a polymer that changes in polarity and decreases in solubility in an organic solvent due to an acid. The resist film is exposed. The exposed resist film is developed using a developer that includes an organic solvent.

Abstract: To provide a photocatalyst having high selectivity and carrying out a reductive reaction with light having a longer wavelength. A photocatalyst has a structure in which a semiconductor and a substrate are joined, in which the substrate causes a catalytic reaction by transfer to the substrate of excited electrons, which are generated by applying light to the semiconductor.

Abstract: A composition for forming a resist underlayer film includes a polysiloxane, and a solvent composition. The solvent composition includes an organic solvent which includes a compound represented by the following formula (1) or a carbonate compound and which has a standard boiling point of no less than 150.0° C. R1 and R2 each independently represent a hydrogen atom, an alkyl group having 1 to 4 carbon atoms or an acyl group having 1 to 4 carbon atoms. R3 represents a hydrogen atom or a methyl group. n is an integer of 1 to 4. In a case where n is no less than 2, a plurality of R3s are identical or different.

Abstract: A resin composite material includes: fine graphite particles including plate-like graphite particles, an aromatic vinyl copolymer which is adsorbed on the plate-like graphite particles, and which contains a vinyl aromatic monomer unit represented by the following formula (1): —(CH2—CHX)—??(1) (in the formula (1), X represents a phenyl group, a naphthyl group, an anthracenyl group, or a pyrenyl group, provided that these groups may have each a substituent), and at least one hydrocarbon chain which is bonded to the aromatic vinyl copolymer, and which is selected from the group consisting of alkyl chains, oligoolefin chains, and polyolefin chains.

Abstract: Fine graphite particles include plate-like graphite particles; and an aromatic vinyl copolymer which is adsorbed on the plate-like graphite particles, and which contains a vinyl aromatic monomer unit represented by the following formula (1): —(CH2—CHX)—??(1) (in the formula (1), X represents a phenyl group, a naphthyl group, an anthracenyl group, or a pyrenyl group, provided that these groups may have each a substituent).

Abstract: An electrolyte having a structure where a fluorinated hydrophilic segment A represented by -E2-[Rf-E1]m- and a hydrocarbon hydrophobic segment B are alternately bonded to each other through chemical bond and a production process therefor, and an electrolyte membrane, a production process therefor, a catalyst layer and a fuel cell using the same. Rf is a linear or a branched perfluoro chain having one or more carbon atoms, E1, and E2 are each a proton conductive portion represented by Formula —(CONM)i1(CO)i2(SO2NM)i3(SO2)i4— (0?i1, 0?i2?1, 0?i3, 0?i4?1, 0<i1+i3, i1 to i4 are each an integer, and M is proton, alkali metal, or alkali earth metal), 2?m (m is an integer), and Rf, E1, and E2 may be each arbitrarily selected in the repeating unit.

Abstract: A nanoheterostructure includes a first inorganic component and a second inorganic component one of which is a matrix, and the other of which is three-dimensionally and periodically arranged in the matrix, and has a three-dimensional periodic structure whose average value of one unit length of a repeated structure is 1 nm to 100 nm.

Abstract: In fabrication of an electrophoretic display device, a display defect (blotches or smears on the display screen) caused by the fact that a very small quantity of moisture and/or air bubbles existing near the electrophoretic display element layer enter the inside of the layer, and another display defect (defective driving) caused by the fact that the said moisture and/or air bubbles enter the boundary between the first substrate and the layer, are reliably prevented. The display element layer is fixed on the display region of the TFT substrate, the sealing member is formed on the TFT substrate to surround the display element layer, and the glass substrate is fixed to the sealing member, constituting the closed inner space around the layer. The space is filled with an inert gas having a pressure approximately equal to an atmospheric pressure or set in a predetermined vacuum state.

Abstract: A resist pattern-forming method includes applying a resist underlayer film-forming composition to a substrate to form a resist underlayer film. The resist underlayer film-forming composition includes (A) a polysiloxane. A radiation-sensitive resin composition is applied to the resist underlayer film to form a resist film. The radiation-sensitive resin composition includes (a1) a polymer that changes in polarity and decreases in solubility in an organic solvent due to an acid. The resist film is exposed. The exposed resist film is developed using a developer that includes an organic solvent.

Abstract: An object of the present invention is to provide a test/diagnosis method for fertility which allows the estimation of the possibility of leading to pregnancy based on the ability of sperm to fuse with an egg and the identification of a cause of infertility; and a polynucleotide and a fertility testing kit which are used in the method.

Abstract: To provide a photocatalyst having high selectivity and carrying out a reductive reaction with light having a longer wavelength. A photocatalyst has a structure in which a semiconductor and a substrate are joined, in which the substrate causes a catalytic reaction by transfer to the substrate of excited electrons, which are generated by applying light to the semiconductor.

Abstract: In the radius end mill, main gash faces has an angle of inclination with respect to an axis that is smaller than a twist angle of chip discharge flutes. The main gash faces are formed on inner circumferential sides of distal end portions of wall surfaces that face in a tool rotation direction of helically twisted chip discharge flutes, which is formed on an outer circumference of a distal end portion of a tool body that is rotated around the axis. End cutting edges are formed on a distal end of the main gash faces. Sub gash faces has an angle of inclination with respect to the axis that is greater than that of the main gash faces. The sub gash faces are formed on an outer circumferential side of the main gash faces such that they extend away via step portions from the main gash faces.

Abstract: The present invention provides a polynucleotide or a complementary sequence thereof, which polynucleotide is complementary to mRNA transcribed from a human male infertility-associated gene Scot-t, and has one or more mutations selected from the following group: “t” at 870th position is replaced by “g”; and “t” at 1667th position is replaced by “c”, in the DNA sequence of SEQ ID NO:168; various molecular biological materials relating thereto; various molecular biological materials relating to male infertility-associated gene mutations; and various test methods and diagnostic methods using the same.