Abstract: Described herein is a technique capable of selectively forming a thin film on a substrate while suppressing damage to other films of the substrate. According to the technique, there is provided a substrate processing method including: (a) providing a substrate where a first oxide film is removed from a surface thereof by supplying a first inorganic material thereto so as to expose at least a first film containing silicon and a second film different from the first film on the surface of the substrate and a second oxide film is formed on a surface of the first film by supplying an oxidizing agent to the substrate, and modifying the second oxide film formed on the surface of the first film by supplying a second inorganic material to the substrate; and (b) selectively growing a film on a surface of the second film by supplying a deposition gas to the substrate.

Abstract: Described herein is a technique capable of selectively forming a thin film on a substrate while suppressing damage to other films of the substrate. According to the technique, there is provided a method of manufacturing a semiconductor device, including: (a) removing a natural oxide film from a surface of a substrate by supplying a first inorganic material to the substrate wherein a first film and a second film different from the first film are exposed on the surface of the substrate; (b) forming an oxide film by oxidizing a surface of the first film by supplying an oxidizing agent to the substrate; (c) modifying the surface of the first film by supplying a second inorganic material to the substrate; and (d) selectively growing a thin film on a surface of the second film by supplying a deposition gas to the substrate, wherein (a) through (d) are sequentially performed.

Abstract: A gas barrier laminate with a total thickness of 100 ?m or less, including a plastic base material (I) and a gas barrier layer (II) laminated on said plastic base material, wherein (1) plastic base material (I) includes a metal-containing layer including at least one metal and a metal compound and a resin component, (2) the total content of metal and metal compound in said metal-containing layer is 0.1 to 70% by mass, (3) gas barrier layer (II) contains polycarboxylic acid, (4) metal-containing layer and gas barrier layer are laminated so that they are in direct contact with each other, and (5) gas barrier laminate is treated at a temperature of 95° C. for 30 minutes. (5) the gas barrier laminate has an oxygen transmission rate of 300 ml/(m2·day·MPa) or less under a temperature of 40° C. and a humidity of 90% RH after hot water treatment for 30 minutes at 95° C.

Abstract: A method of processing a substrate includes: (a) providing a substrate; (b) supplying a processing gas including H and O containing radicals to the substrate; (c) supplying a gas including at least one element selected from Si, Ti, Mo, Al, W, Hf or Zr and a halogen element to the substrate; (d) supplying a gas including one or both of an oxygen element and a nitrogen element to the substrate after (c); and (e) repeating (c) and (d), wherein in (b), the supply of the processing gas and a supply of an inert gas are performed.

Abstract: A method of processing a substrate includes: (a) providing a substrate; (b) supplying a processing gas to the substrate that the surface of the substrate is modified to be OH-terminated; (c) supplying a gas including at least one element selected from Si, Ti, Mo, Al, W, Hf or Zr and a halogen element to the substrate; (d) supplying a gas including one or both of an oxygen element and a nitrogen element to the substrate after (c); and (e) repeating (c) and (d), wherein in (b), the supply of the processing gas and a supply of an inert gas are performed.

Abstract: There is provided a technique that includes: organically terminating a first region of a substrate by supplying an adsorption control agent containing an organic ligand to the substrate while regulating a temperature of the substrate including the first region and a second region different from the first region formed on a surface of the substrate depending on a composition of the first region; and selectively growing a film on the second region by supplying a deposition gas to the substrate.

Abstract: A method of processing a substrate includes: (a) providing a substrate; (b) supplying a processing gas comprising H2O-containing radicals to the substrate; (c) supplying a gas including at least one element of Si, Ti, Mo, Al, W, Hf or Zr and a halogen element to the substrate; (d) supplying a gas including one or both of an oxygen element and a nitrogen element to the substrate after (c); and (e) repeating (c) and (d).

Abstract: There is provided a technique that includes: organically terminating a first region of a substrate by supplying an adsorption control agent containing an organic ligand to the substrate while regulating a temperature of the substrate including the first region and a second region different from the first region formed on a surface of the substrate depending on a composition of the first region; and selectively growing a film on the second region by supplying a deposition gas to the substrate.

Abstract: There is provided a technique that includes: at least one process chamber in which at least one substrate is processed; a mounting stage configured to be capable of mounting the at least one substrate on the mounting stage; a transport chamber including a conveyor configured to be capable of holding the mounting stage at least two places in a vertical direction and transporting the mounting stage; and a controller configured to be capable of performing a transport control of the conveyor in the transport chamber.

Abstract: There is provided a technique that includes: at least one process chamber in which at least one substrate is processed; a mounting stage configured to be capable of mounting the at least one substrate on the mounting stage; a transport chamber including a conveyor configured to be capable of holding the mounting stage at least two places in a vertical direction and transporting the mounting stage; and a controller configured to be capable of performing a transport control of the conveyor in the transport chamber.

Abstract: A method of processing a substrate includes: (a) providing a substrate; (b) supplying a processing gas comprising H2O-containing radicals to the substrate; (c) supplying a gas including at least one element of Si, Ti, Mo, Al, W, Hf or Zr and a halogen element to the substrate; (d) supplying a gas including one or both of an oxygen element and a nitrogen element to the substrate after (c); and (e) repeating (c) and (d).

Abstract: A polyester film includes a polyester (A) composed mainly of polybutylene terephthalate and a polyester (B) composed mainly of polyethylene terephthalate, wherein a mass ratio (A/B) between the polyesters (A) and (B) is 70/30 to 55/45, a dry heat shrinkage rate (B) through heat treatment at 200° C. for 15 minutes is 35% or less in any of four directions (0°, 45° 90° and 135°) on the film surface, a difference between a maximum value and a minimum value of these dry heat shrinkage rates is 5% or less, a thickness variation in the four directions is 10% or less, and a crystallization index shown in DSC measurement is 25 to 55 J/g.

Abstract: A method of manufacturing a semiconductor device including: (a) loading a substrate into a process chamber; (b) supplying a processing gas including H2O-containing radicals to the substrate; (c) supplying a gas including a halogen element; (d) supplying a gas including one or both of an oxygen element and a nitrogen element after (c); (e) repeating (c) and (d); and (f) repeating (b) and (e).

Abstract: There is provided a technique that includes: at least one process chamber in which at least one substrate is processed; a mounting stage configured to be capable of mounting the at least one substrate on the mounting stage; a transport chamber including a conveyor configured to be capable of holding the mounting stage at least two places in a vertical direction and transporting the mounting stage; and a controller configured to be capable of performing a transport control of the conveyor in the transport chamber.

Abstract: There is provided a technique that includes filling a concave portion formed on a surface of a substrate with a first film and a second film by performing: (a) forming the first film having a hollow portion using a first precursor so as to fill the concave portion formed on the surface of the substrate; (b) etching a portion of the first film which makes contact with the hollow portion, using an etching agent; and (c) forming the second film on the first film of which the portion is etched, using a second precursor, wherein (b) includes performing, a predetermined number of times: (b-1) modifying a portion of the first film using a modifying agent; and (b-2) selectively etching the modified portion of the first film using the etching agent.

Abstract: To provide a biaxially stretched polyester resin film that has excellent properties equal to or better than those of biaxially stretched polyester film that does not use recycled raw material, and in particular that has an excellent flexural resistance in low-temperature environments. A biaxially stretched polyester resin film that characteristically satisfies both of the following properties (1) and (2): (1) in differential scanning calorimetry (DSC), after heating from 25° C. to 300° C. at a heating rate of 20° C./minute and holding for 10 minutes at 300° C., the temperature of crystallization during cooling at a cooling rate of 40° C./minute is 160° C. to 180° C.; and (2) the number of pinholes after the execution of 200 repetitive cycles of a flexural fatigue test in a ?10° C. atmosphere using a Gelbo Flex Tester is not more than 10/500 cm2.

Abstract: There is provided a technique that includes selectively doping a metal film with a dopant by performing: supplying a dopant-containing gas containing the dopant to a substrate in which the metal film and a film other than the metal film are formed on a film in which the dopant is doped; and removing the dopant-containing gas from above the substrate.

Abstract: (a) Loading a substrate into a process chamber; (b) supplying a processing gas including H2O-containing radicals to the substrate; (c) supplying a gas including a halogen element; (d) supplying a gas including one or both of an oxygen element and a nitrogen element after (c); and (e) repeating (c) and (d) are provided.

Abstract: Described herein is a technique capable of selectively growing a film with a high selectivity on a substrate with surface portions of different materials. According to one aspect of the technique of the present disclosure, there is provided a method of manufacturing a semiconductor device including: (a) forming a second metal film on a substrate with a first metal film and an insulating film formed thereon by alternately supplying a metal-containing gas and a reactive gas onto the substrate, wherein an incubation time on the insulating film is longer than that on the first metal film; and (b) supplying an etching gas onto the substrate to remove the second metal film formed on the insulating film while allowing the second metal film to remain on the first metal film, wherein the second metal film is selectively grown on the first metal film by alternately repeating (a) and (b).

Abstract: A method of manufacturing a semiconductor device including: (a) loading a substrate into a process chamber; (b) supplying a processing gas including H2O-containing radicals to the substrate; (c) supplying a gas including a halogen element; (d) supplying a gas including one or both of an oxygen element and a nitrogen element after (c); (e) repeating (c) and (d); and (f) repeating (b) and (e).