Abstract: A semiconductor device includes a first electrode which is provided in a first substrate and of which one surface is positioned on the same surface as a bonding surface between the first substrate and a second substrate, and a second electrode which is provided in the second substrate and of which one surface is positioned on the same surface as a bonding surface and bonded to one surface of the first electrode. Therefore, the semiconductor device includes at least one of a first capacitor which is provided in the first substrate and of which one electrode is electrically connected to a non-exposed surface of the first electrode and a second capacitor which is provided in the second substrate and of which one electrode is electrically connected to a non-exposed surface of the second electrode.

Abstract: There is provided a solid-state imaging device including first, second, and third substrates stacked in this order. The first substrate includes a first semiconductor substrate and a first wiring layer. A pixel unit is formed on the first semiconductor substrate. The second substrate includes a second semiconductor substrate and a second wiring layer. The third substrate includes a third semiconductor substrate and a third wiring layer. A first coupling structure couples two of the first, second, and third substrates to each other includes a via. The via has a structure in which electrically-conductive materials are embedded in one through hole and another through hole, or a structure in which films including electrically-conductive materials are formed on inner walls of the through holes. The one through hole exposes a first wiring line in one of the wiring layers. The other through hole exposes a second wiring line another wiring layer.

Abstract: A semiconductor device includes a first electrode which is provided in a first substrate and of which one surface is positioned on the same surface as a bonding surface between the first substrate and a second substrate, and a second electrode which is provided in the second substrate and of which one surface is positioned on the same surface as a bonding surface and bonded to one surface of the first electrode. Therefore, the semiconductor device includes at least one of a first capacitor which is provided in the first substrate and of which one electrode is electrically connected to a non-exposed surface of the first electrode and a second capacitor which is provided in the second substrate and of which one electrode is electrically connected to a non-exposed surface of the second electrode.

Abstract: There is provided a solid-state imaging device including first, second, and third substrates stacked in this order. The first substrate includes a first semiconductor substrate and a first wiring layer. A pixel unit is formed on the first semiconductor substrate. The second substrate includes a second semiconductor substrate and a second wiring layer. The third substrate includes a third semiconductor substrate and a third wiring layer. A first coupling structure couples two of the first, second, and third substrates to each other includes a via. The via has a structure in which electrically-conductive materials are embedded in one through hole and another through hole, or a structure in which films including electrically-conductive materials are formed on inner walls of the through holes. The one through hole exposes a first wiring line in one of the wiring layers. The other through hole exposes a second wiring line another wiring layer.

Abstract: A solid-state imaging device is provided that comprises a first substrate that includes a first multi-layered wiring layer stacked on a first semiconductor substrate, a second substrate that includes a second multi-layered wiring layer and an insulating layer stacked on a second semiconductor substrate, and a third substrate that includes a third multi-layered wiring layer stacked on a third semiconductor substrate. A first coupling structure electrically couples the first and second substrates to each other. A second coupling structure exists on bonding surfaces of the second and third substrates, and includes an electrode junction structure in which electrodes formed on respective bonding surfaces are in direct contact with each other. A first via penetrates the second semiconductor substrate and electrically couples a first electrode to a wiring in the second multi-layered wiring layer. A second via electrically couples the second electrode to another wiring in the third multi-layered wiring layer.

Abstract: The present technology relates to an imaging device and an electronic apparatus each capable of expanding a dynamic range without lowering a saturation charge quantity of a photodiode. There are provided a photoelectric conversion unit that converts light into charge, multiple storage portions that temporarily store charge, multiple transfer units that transfer charge to the storage portions, and a penetration trench that separates pixels. At least one of the multiple storage portions is a capacitive element. At least one of the multiple storage portions stores charge overflowing from the photoelectric conversion unit. For example, the present technology is applicable to an imaging device for capturing images.

Abstract: There is provided a solid-state imaging device including: a first substrate including a first semiconductor substrate and a first wiring layer, the first semiconductor substrate having a pixel unit with pixels; a second substrate including a second semiconductor substrate and a second wiring layer, the second semiconductor substrate having a circuit with a predetermined function; and a third substrate including a third semiconductor substrate and a third wiring layer, the third semiconductor substrate having a circuit with a predetermined function, the first, second, and third substrates being stacked in this order, the first substrate and the second substrate being bonded together with the first wiring layer and the second wiring layer opposed to each other, a first coupling structure on bonding surfaces of the first substrate and the second substrate, and including an electrode junction structure with electrodes formed on the respective bonding surfaces in direct contact with each other.

Abstract: Provided is a solid-state imaging device that includes a first substrate which includes a first semiconductor substrate and a first multi-layered wiring layer that are stacked, a second substrate which includes a second semiconductor substrate and a second multi-layered wiring layer that are stacked, and a third substrate which includes a third semiconductor substrate and a third multi-layered wiring layer that are stacked. The solid-state imaging device further includes a first coupling structure for electrically coupling a circuit of the first substrate and a circuit of the second substrate to each other. The first coupling structure includes a via in which one through hole electrically couples a predetermined wiring line in the first multi-layered wiring layer, and a predetermined wiring line in the second multi-layered wiring layer or a predetermined wiring line in the third multi-layered wiring layer to each other.

Abstract: There is provided a solid-state imaging device including first, second, and third substrates stacked in this order. The first substrate includes a first semiconductor substrate and a first wiring layer. A pixel unit is formed on the first semiconductor substrate. The second substrate includes a second semiconductor substrate and a second wiring layer. The third substrate includes a third semiconductor substrate and a third wiring layer. A first coupling structure couples two of the first, second, and third substrates to each other includes a via. The via has a structure in which electrically-conductive materials are embedded in one through hole and another through hole, or a structure in which films including electrically-conductive materials are formed on inner walls of the through holes. The one through hole exposes a first wiring line in one of the wiring layers. The other through hole exposes a second wiring line in another wiring layer.

Abstract: A solid-state imaging device and an electronic apparatus include: a first pixel provided on a side of a first surface serving as a side from which light enters of a first base, and a second pixel that is disposed in a first direction on the first surface to be adjacent to the first pixel; a first signal terminal that is provided in a region corresponding to a center portion of the first pixel on a side of a second surface of the first base and is coupled to the first pixel; a second signal terminal that is provided in a region corresponding to a center portion of the second pixel and is coupled to the second pixel; a first shield terminal that is provided in a region corresponding to a side of the second pixel of a peripheral portion of the first pixel on the side of the second surface; and a second shield terminal that is provided in a region corresponding to a side of the first pixel of a peripheral portion of the second pixel on the side of the second surface and is provided in a region displaced in a seco

Abstract: To provide a solid-state imaging device and an electronic apparatus with further improved performance. A solid-state imaging device including: a first substrate on which a pixel unit is formed, and a first semiconductor substrate and a first multi-layered wiring layer are stacked; a second substrate on which a circuit having a predetermined function is formed, and a second semiconductor substrate and a second multi-layered wiring layer are stacked; and a third substrate on which a circuit having a predetermined function is formed, and a third semiconductor substrate and a third multi-layered wiring layer are stacked. The first substrate, the second substrate, and the third substrate are stacked in this order. The pixel unit has pixels arranged thereon. The first substrate and the second substrate are bonded together in a manner that the first multi-layered wiring layer and the second semiconductor substrate are opposed to each other.

Abstract: The present application provides a composition for an optical material containing a compound (a) and/or a compound (b) and a compound (c) which are described below. The proportion of the compound (a) and/or the compound (b) is 0.001-30.0% by mass. The compound (a) is a compound represented by formula (1). The compound (b) is a compound represented by formula (2). The compound (c) is an episulfide compound.

Abstract: A solid-state imaging device including: a first substrate having a pixel unit, and a first semiconductor substrate and a first wiring layer; a second substrate with a circuit, and a second semiconductor substrate and a second wiring layer; and a third substrate with a circuit, and a third semiconductor substrate and a third wiring layer. The first and second substrates are bonded together such that the first wiring layer and the second semiconductor substrate are opposed to each other. The device includes a first coupling structure for electrically coupling a circuit of the first substrate and the circuit of the second substrate. The first coupling structure includes a via in which electrically-conductive materials are embedded in a first through hole that exposes a wiring line in the first wiring layer and in a second through hole that exposes a wiring line in the second wiring layer or a film-formed structure.

Abstract: There is provided a solid-state imaging device including: a first substrate including a first semiconductor substrate and a first wiring layer, the first semiconductor substrate having a pixel unit with pixels; a second substrate including a second semiconductor substrate and a second wiring layer, the second semiconductor substrate having a circuit with a predetermined function; and a third substrate including a third semiconductor substrate and a third wiring layer, the third semiconductor substrate having a circuit with a predetermined function, the first, second, and third substrates being stacked in this order, the first substrate and the second substrate being bonded together with the first wiring layer and the second wiring layer opposed to each other, a first coupling structure on bonding surfaces of the first substrate and the second substrate, and including an electrode junction structure with electrodes formed on the respective bonding surfaces in direct contact with each other.

Abstract: A solid-state imaging device including a first substrate on which a pixel unit is formed, and a first semiconductor substrate and a first multi-layered wiring layer are stacked, a second substrate on which a circuit having a predetermined function is formed, and a second semiconductor substrate and a second multi-layered wiring layer are stacked, and a third substrate on which a circuit having a predetermined function is formed, and a third semiconductor substrate and a third multi-layered wiring layer are stacked. The first substrate, the second substrate, and the third substrate are stacked in this order. A first coupling structure for electrically coupling a circuit of the first substrate and the circuit of the second substrate to each other does not include a coupling structure formed from the first substrate as a base over bonding surfaces of the first substrate and the second substrate.

Abstract: The present invention makes it possible to provide a compound represented by formula (1) and a composition for an optical material containing this compound. (Where m+n=4, m represents an integer of from 0 to 3, and n represents an integer of from 1 to 4.) In addition, the present invention makes it possible to provide a method for producing an optical material, the method including a step for adding 0.0001-10 parts by mass of a polymerization catalyst per 100 parts by mass of the composition for an optical material, polymerizing, and curing.

Abstract: The present invention enables provision of a production method for 1,2,3,5,6-pentathiepane, the method comprising, in the following order, step A for reacting a trithiocarbonate, sulfur, and a methane dihalide together using a phase-transfer catalyst in a multilayer system having a water layer and an organic layer, step B for separating the water layer from the organic layer, and step C for stopping the reaction using an acid.

Abstract: Provided is an imaging device including: a first semiconductor substrate provided with a photoelectric conversion element, a second semiconductor substrate stacked on the first semiconductor substrate with an interlayer insulating film interposed therebetween and provided with a pixel circuit that reads out charges generated in the photoelectric conversion element as a pixel signal, and a via that penetrates the interlayer insulating film and electrically connects a first surface of the first semiconductor substrate facing the second semiconductor substrate and at least a part of a second surface of the second semiconductor substrate facing the first surface.

Abstract: Provided is a composition for optical materials that gives optical materials which can have at least one improved property selected from among satisfactory mold releasability after polymerization and curing, unsusceptibility to separation from the mold during polymerization and curing, transparency, and low-level striae. The present invention further provides a compound represented by formula (1). The composition for optical materials comprises the compound represented by formula (1) and a compound represented by formula (2). (In formula (1), X1 and X2 represent O or S, provided that both X1 and X2 are O or that X1 is O and X2 is S.

Abstract: A solid-state imaging device including a first substrate having a pixel unit formed thereon and including a first semiconductor substrate and a first multi-layered wiring layer stacked, a second substrate having a circuit formed thereon and including a second semiconductor substrate and a second multi-layered wiring layer, the circuit having a predetermined function, and a third substrate having a circuit formed thereon and including a third semiconductor substrate and a third multi-layered wiring layer. The first substrate and the second substrate are bonded together such that that the first multi-layered wiring layer and the second semiconductor substrate are opposed to each other. The solid-state imaging device includes a first coupling structure and a second coupling structure. The first coupling structure electrically couples a circuit of the first substrate and the circuit of the second substrate.