Patents by Inventor Hiroshi Horikoshi

Hiroshi Horikoshi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11411036
    Abstract: A solid-state imaging device includes a first substrate including a first semiconductor substrate and a first multi-layered wiring layer stacked on the first semiconductor substrate, a second substrate including a second semiconductor substrate and a second multi-layered wiring layer stacked on the second semiconductor substrate, a third substrate including a third semiconductor substrate and a third multi-layered wiring layer stacked on the third semiconductor substrate, and a first coupling structure for electrically coupling the first substrate and the second substrate. The first substrate, the second substrate, and the third substrate are stacked in this order. The first substrate and the second substrate are bonded together such that the first multi-layered wiring layer and the second multi-layered wiring layer are opposed to each other. The first substrate excludes a coupling structure formed from the first substrate as a base over bonding surfaces of the first substrate and the second substrate.
    Type: Grant
    Filed: March 23, 2018
    Date of Patent: August 9, 2022
    Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
    Inventors: Takatoshi Kameshima, Hideto Hashiguchi, Ikue Mitsuhashi, Hiroshi Horikoshi, Reijiroh Shohji, Minoru Ishida, Tadashi Iijima, Masaki Haneda
  • Patent number: 11411037
    Abstract: [Object] To provide a solid-state imaging device and an electronic apparatus with further improved performance. [Solution] A solid-state imaging device including: a first substrate on which a pixel unit is formed, and a first semiconductor substrate and a first multi-layered wiring layer are stacked; a second substrate on which a circuit having a predetermined function is formed, and a second semiconductor substrate and a second multi-layered wiring layer are stacked; and a third substrate on which a circuit having a predetermined function is formed, and a third semiconductor substrate and a third multi-layered wiring layer are stacked. The first substrate, the second substrate, and the third substrate are stacked in this order. The pixel unit has pixels arranged thereon. The first substrate and the second substrate are bonded together in a manner that the first multi-layered wiring layer and the second semiconductor substrate are opposed to each other.
    Type: Grant
    Filed: March 23, 2018
    Date of Patent: August 9, 2022
    Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
    Inventors: Hideto Hashiguchi, Reijiroh Shohji, Hiroshi Horikoshi, Ikue Mitsuhashi, Tadashi Iijima, Takatoshi Kameshima, Minoru Ishida, Masaki Haneda
  • Patent number: 11377433
    Abstract: The present invention makes it possible to provide a method for producing a polyfunctional sulfur-containing epoxy compound, the method being characterized in that a polyfunctional thiol is reacted with an epihalohydrin in the presence of a reducing agent to form a polyfunctional sulfur-containing halohydrin, which is then reacted with a basic compound. The reducing agent is preferably at least one selected from the group consisting of sodium borohydride, lithium borohydride, lithium aluminum hydride, diisobutylaluminum hydride, and hydrazine.
    Type: Grant
    Filed: June 11, 2019
    Date of Patent: July 5, 2022
    Assignee: MITSUBISHI GAS CHEMICAL COMPANY, INC.
    Inventors: Yousuke Imagawa, Hiroshi Horikoshi
  • Publication number: 20220157877
    Abstract: There is provided a solid-state imaging device including: a first substrate including a first semiconductor substrate and a first wiring layer, the first semiconductor substrate having a pixel unit with pixels; a second substrate including a second semiconductor substrate and a second wiring layer, the second semiconductor substrate having a circuit with a predetermined function; and a third substrate including a third semiconductor substrate and a third wiring layer, the third semiconductor substrate having a circuit with a predetermined function, the first, second, and third substrates being stacked in this order, the first substrate and the second substrate being bonded together with the first wiring layer and the second wiring layer opposed to each other, a first coupling structure on bonding surfaces of the first substrate and the second substrate, and including an electrode junction structure with electrodes formed on the respective bonding surfaces in direct contact with each other.
    Type: Application
    Filed: February 3, 2022
    Publication date: May 19, 2022
    Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
    Inventors: Reijiroh SHOHJI, Masaki HANEDA, Hiroshi HORIKOSHI, Minoru ISHIDA, Takatoshi KAMESHIMA, Ikue MITSUHASHI, Hideto HASHIGUCHI, Tadashi IIJIMA
  • Patent number: 11289526
    Abstract: There is provided a solid-state imaging device including: a first substrate including a first semiconductor substrate and a first wiring layer, the first semiconductor substrate having a pixel unit with pixels; a second substrate including a second semiconductor substrate and a second wiring layer, the second semiconductor substrate having a circuit with a predetermined function; and a third substrate including a third semiconductor substrate and a third wiring layer, the third semiconductor substrate having a circuit with a predetermined function, the first, second, and third substrates being stacked in this order, the first substrate and the second substrate being bonded together with the first wiring layer and the second wiring layer opposed to each other, a first coupling structure on bonding surfaces of the first substrate and the second substrate, and including an electrode junction structure with electrodes formed on the respective bonding surfaces in direct contact with each other.
    Type: Grant
    Filed: March 23, 2018
    Date of Patent: March 29, 2022
    Assignee: Sony Semiconductor Solutions Corporation
    Inventors: Reijiroh Shohji, Masaki Haneda, Hiroshi Horikoshi, Minoru Ishida, Takatoshi Kameshima, Ikue Mitsuhashi, Hideto Hashiguchi, Tadashi Iijima
  • Patent number: 11282911
    Abstract: Display devices, display modules, and methods of manufacture are disclosed. In one example, a display device includes a pixel region in which pixels for displaying an image are arranged, on an upper surface of a substrate. A device-side signal electrode for exchanging a signal related to the pixels with an outside is disposed on a side surface of the substrate. A module casing is configured to store the display device and to have a casing-side signal electrode electrically connected to the device-side signal electrode in a spot facing the device-side signal electrode.
    Type: Grant
    Filed: April 14, 2017
    Date of Patent: March 22, 2022
    Assignee: Sony Group Corporation
    Inventors: Hiroshi Horikoshi, Masato Kawashima, Kaori Takimoto, Masaya Nagata
  • Publication number: 20220085093
    Abstract: To provide a solid-state imaging device and an electronic apparatus with further improved performance.
    Type: Application
    Filed: November 23, 2021
    Publication date: March 17, 2022
    Inventors: IKUE MITSUHASHI, REIJIROH SHOHJI, MINORU ISHIDA, TADASHI IIJIMA, TAKATOSHI KAMESHIMA, HIDETO HASHIGUCHI, HIROSHI HORIKOSHI, MASAKI HANEDA
  • Publication number: 20220077215
    Abstract: To provide a photoelectric conversion element which enables an occupied area to be reduced and conversion efficiency and a dynamic range to be adjusted. The photoelectric conversion element includes: a photoelectric conversion unit configured to convert a light signal into a signal charge; a transfer gate structure which is connected to the photoelectric conversion unit and which is configured to transfer the signal charge; a charge storage region to which the signal charge is transferred by the transfer gate structure; a charge holding unit with a capacitor structure which is electrically connected to the charge storage region and which is configured to store the signal charge; and an amplifying transistor of which a control electrode is electrically connected to the charge storage region.
    Type: Application
    Filed: November 28, 2019
    Publication date: March 10, 2022
    Inventor: HIROSHI HORIKOSHI
  • Patent number: 11214650
    Abstract: A composition for a high refractive index, low dispersion resin for a close-contact double layer-type composite diffractive optical element that is highly photocurable and provides a high productivity, and a close-contact double layer-type composite diffractive optical element using such composition are provided. A composition for a high refractive index, low dispersion resin for a close-contact double layer-type composite diffractive optical element includes a thiol compound represented by general formula (1) or an oligomer synthesized by use of a thiol compound represented by general formula (1) (A component); and an ene compound including two or more polymerizable unsaturated bonds (B component). (In the formula, p represents an integer of 2 to 5; Xp and Zp independently represent a hydrogen atom or a mercaptomethyl group; a ratio of sulfur atoms in a molecule is 40 to 80% by mass; and the number of thiol groups is 3 or larger.).
    Type: Grant
    Filed: April 6, 2017
    Date of Patent: January 4, 2022
    Assignee: MITSUBISHI GAS CHEMICAL COMPANY, INC.
    Inventors: Kousuke Namiki, Eiji Koshiishi, Kikuo Furukawa, Hiroshi Horikoshi
  • Publication number: 20210391372
    Abstract: There is provided a solid-state imaging device including first, second, and third substrates stacked in this order. The first substrate includes a first semiconductor substrate and a first wiring layer. A pixel unit is formed on the first semiconductor substrate. The second substrate includes a second semiconductor substrate and a second wiring layer. The third substrate includes a third semiconductor substrate and a third wiring layer. A first coupling structure couples two of the first, second, and third substrates to each other includes a via. The via has a structure in which electrically-conductive materials are embedded in one through hole and another through hole, or a structure in which films including electrically-conductive materials are formed on inner walls of the through holes. The one through hole exposes a first wiring line in one of the wiring layers. The other through hole exposes a second wiring line in another wiring layer.
    Type: Application
    Filed: August 30, 2021
    Publication date: December 16, 2021
    Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
    Inventors: Takatoshi KAMESHIMA, Hideto HASHIGUCHI, Ikue MITSUHASHI, Hiroshi HORIKOSHI, Reijiroh SHOHJI, Minoru ISHIDA, Tadashi IIJIMA, Masaki HANEDA
  • Patent number: 11201185
    Abstract: Provided is a solid-state imaging device including a first substrate that includes a pixel unit, a first semiconductor substrate, and a first multi-layered wiring layer stacked, a second substrate that includes circuit, a second semiconductor substrate, and a second multi-layered wiring layer stacked, the circuit having a predetermined function, a third substrate that includes a circuit, a third semiconductor substrate, and a third multi-layered wiring layer. The first substrate and the second substrate being bonded together such that the first multi-layered wiring layer is opposite to the second semiconductor substrate, and a first coupling structure for electrically coupling the circuit of the first substrate with the circuit of the second substrate, the first coupling structure is on bonding surfaces of the first substrate and the second substrate, and includes an electrode junction structure in which electrodes on the respective bonding surfaces are joined to each other in direct contact.
    Type: Grant
    Filed: March 23, 2018
    Date of Patent: December 14, 2021
    Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
    Inventors: Ikue Mitsuhashi, Reijiroh Shohji, Minoru Ishida, Tadashi Iijima, Takatoshi Kameshima, Hideto Hashiguchi, Hiroshi Horikoshi, Masaki Haneda
  • Publication number: 20210366973
    Abstract: Provided are a solid-state imaging device and an electronic apparatus with further improved performance. The solid-state imaging device including a first substrate on which a pixel unit is formed, and a first semiconductor substrate and a first multi-layered wiring layer are stacked, a second substrate on which a circuit having a predetermined function is formed, and a second semiconductor substrate and a second multi-layered wiring layer are stacked, and a third substrate on which a circuit having a predetermined function is formed, and a third semiconductor substrate and a third multi-layered wiring layer are stacked. The first substrate, the second substrate, and the third substrate are stacked in this order. The pixel unit has pixels arranged thereon. The first substrate and the second substrate are bonded together with the first multi-layered wiring layer and the second semiconductor substrate opposed to each other.
    Type: Application
    Filed: August 9, 2021
    Publication date: November 25, 2021
    Inventors: HIROSHI HORIKOSHI, MINORU ISHIDA, REIJIROH SHOHJI, TADASHI IIJIMA, TAKATOSHI KAMESHIMA, HIDETO HASHIGUCHI, IKUE MITSUHASHI, MASAKI HANEDA
  • Publication number: 20210340129
    Abstract: Provided is a composition for optical materials that gives optical materials which can have at least one improved property selected from among satisfactory mold releasability after polymerization and curing, unsusceptibility to separation from the mold during polymerization and curing, transparency, and low-level striae. The present invention further provides a compound represented by formula (1). The composition for optical materials comprises the compound represented by formula (1) and a compound represented by formula (2). (In formula (1), X1 and X2 represent O or S, provided that both X1 and X2 are O or that X1 is O and X2 is S.
    Type: Application
    Filed: June 27, 2019
    Publication date: November 4, 2021
    Applicant: MITSUBISHI GAS CHEMICAL COMPANY, INC.
    Inventors: Kouhei TAKEMURA, Yousuke IMAGAWA, Hiroshi HORIKOSHI
  • Patent number: 11152418
    Abstract: There is provided a solid-state imaging device including first, second, and third substrates stacked in this order. The first substrate includes a first semiconductor substrate and a first wiring layer. A pixel unit is formed on the first semiconductor substrate. The second substrate includes a second semiconductor substrate and a second wiring layer. The third substrate includes a third semiconductor substrate and a third wiring layer. A first coupling structure couples two of the first, second, and third substrates to each other includes a via. The via has a structure in which electrically-conductive materials are embedded in one through hole and another through hole, or a structure in which films including electrically-conductive materials are formed on inner walls of the through holes. The one through hole exposes a first wiring line in one of the wiring layers. The other through hole exposes a second wiring line in another wiring layer.
    Type: Grant
    Filed: March 23, 2018
    Date of Patent: October 19, 2021
    Assignee: Sony Semiconductor Solutions Corporation
    Inventors: Takatoshi Kameshima, Hideto Hashiguchi, Ikue Mitsuhashi, Hiroshi Horikoshi, Reijiroh Shohji, Minoru Ishida, Tadashi Iijima, Masaki Haneda
  • Publication number: 20210292297
    Abstract: The present invention makes it possible to provide a compound represented by formula (1) and a composition for an optical material containing this compound. (Where m+n=4, m represents an integer of from 0 to 3, and n represents an integer of from 1 to 4.) In addition, the present invention makes it possible to provide a method for producing an optical material, the method including a step for adding 0.0001-10 parts by mass of a polymerization catalyst per 100 parts by mass of the composition for an optical material, polymerizing, and curing.
    Type: Application
    Filed: August 1, 2019
    Publication date: September 23, 2021
    Applicant: MITSUBISHI GAS CHEMICAL COMPANY, INC.
    Inventors: Kouhei TAKEMURA, Hiroshi HORIKOSHI
  • Patent number: 11101313
    Abstract: [Object] To provide a solid-state imaging device and an electronic apparatus with further improved performance. [Solution] A solid-state imaging device including: a first substrate on which a pixel unit is formed, and a first semiconductor substrate and a first multi-layered wiring layer are stacked; a second substrate on which a circuit having a predetermined function is formed, and a second semiconductor substrate and a second multi-layered wiring layer are stacked; and a third substrate on which a circuit having a predetermined function is formed, and a third semiconductor substrate and a third multi-layered wiring layer are stacked. The first substrate, the second substrate, and the third substrate are stacked in this order. The pixel unit has pixels arranged thereon. The first substrate and the second substrate are bonded together with the first multi-layered wiring layer and the second semiconductor substrate opposed to each other.
    Type: Grant
    Filed: March 23, 2018
    Date of Patent: August 24, 2021
    Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
    Inventors: Hiroshi Horikoshi, Minoru Ishida, Reijiroh Shohji, Tadashi Iijima, Takatoshi Kameshima, Hideto Hashiguchi, Ikue Mitsuhashi, Masaki Haneda
  • Publication number: 20210253798
    Abstract: The present invention provides a composition for an optical material containing a compound (a) and/or a compound (b) and a compound (c) which are described below. In a preferable embodiment, the proportion of the compound (a) and/or the compound (b) is 0.001-30.0% by mass. The compound (a) is a compound represented by formula (1). The compound (b) is a compound represented by formula (2). The compound (c) is an episulfide compound.
    Type: Application
    Filed: August 21, 2019
    Publication date: August 19, 2021
    Applicant: MITSUBISHI GAS CHEMICAL COMPANY, INC.
    Inventors: Yousuke IMAGAWA, Hiroshi HORIKOSHI
  • Patent number: 11078363
    Abstract: Provided an optical material composition which makes it possible to design an optical material exhibiting a broad range of properties. This optical material composition contains a compound (A) represented by formula (1) and a polythiol (a), and does not contain 1,2,3,5,6-pentathiepane (b).
    Type: Grant
    Filed: February 6, 2018
    Date of Patent: August 3, 2021
    Assignee: MITSUBISHI GAS CHEMICAL COMPANY, INC.
    Inventors: Yoshihiko Nishimori, Yosuke Imagawa, Kouhei Takemura, Hiroshi Horikoshi, Yoshiaki Yamamoto
  • Publication number: 20210217797
    Abstract: A solid-state imaging device including: a first substrate having a pixel unit, and a first semiconductor substrate and a first wiring layer; a second substrate with a circuit, and a second semiconductor substrate and a second wiring layer; and a third substrate with a circuit, and a third semiconductor substrate and a third wiring layer. The first and second substrates are bonded together such that the first wiring layer and the second semiconductor substrate are opposed to each other. The device includes a first coupling structure for electrically coupling a circuit of the first substrate and the circuit of the second substrate. The first coupling structure includes a via in which electrically-conductive materials are embedded in a first through hole that exposes a wiring line in the first wiring layer and in a second through hole that exposes a wiring line in the second wiring layer or a film-formed structure.
    Type: Application
    Filed: March 29, 2021
    Publication date: July 15, 2021
    Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
    Inventors: Hideto HASHIGUCHI, Reijiroh SHOHJI, Hiroshi HORIKOSHI, Ikue MITSUHASHI, Tadashi IIJIMA, Takatoshi KAMESHIMA, Minoru ISHIDA, Masaki HANEDA
  • Patent number: 10998369
    Abstract: A solid-state imaging device including: a first substrate having a pixel unit, and a first semiconductor substrate and a first wiring layer; a second substrate with a circuit, and a second semiconductor substrate and a second wiring layer; and a third substrate with a circuit, and a third semiconductor substrate and a third wiring layer. The first and second substrates are bonded together such that the first wiring layer and the second semiconductor substrate are opposed to each other. The device includes a first coupling structure for electrically coupling a circuit of the first substrate and the circuit of the second substrate. The first coupling structure includes a via in which electrically-conductive materials are embedded in a first through hole that exposes a wiring line in the first wiring layer and in a second through hole that exposes a wiring line in the second wiring layer or a film-formed structure.
    Type: Grant
    Filed: March 23, 2018
    Date of Patent: May 4, 2021
    Assignee: Sony Semiconductor Solutions Corporation
    Inventors: Hideto Hashiguchi, Reijiroh Shohji, Hiroshi Horikoshi, Ikue Mitsuhashi, Tadashi Iijima, Takatoshi Kameshima, Minoru Ishida, Masaki Haneda