Abstract: There is provided a solid-state imaging device including: a first substrate including a first semiconductor substrate and a first wiring layer, the first semiconductor substrate having a pixel unit with pixels; a second substrate including a second semiconductor substrate and a second wiring layer, the second semiconductor substrate having a circuit with a predetermined function; and a third substrate including a third semiconductor substrate and a third wiring layer, the third semiconductor substrate having a circuit with a predetermined function, the first, second, and third substrates being stacked in this order, the first substrate and the second substrate being bonded together with the first wiring layer and the second wiring layer opposed to each other, a first coupling structure on bonding surfaces of the first substrate and the second substrate, and including an electrode junction structure with electrodes formed on the respective bonding surfaces in direct contact with each other.

Abstract: The present invention makes it possible to provide a compound represented by formula (1) and a composition for an optical material containing this compound. (Where m+n=4, m represents an integer of from 0 to 3, and n represents an integer of from 1 to 4.) In addition, the present invention makes it possible to provide a method for producing an optical material, the method including a step for adding 0.0001-10 parts by mass of a polymerization catalyst per 100 parts by mass of the composition for an optical material, polymerizing, and curing.

Abstract: A solid-state imaging device including a first substrate on which a pixel unit is formed, and a first semiconductor substrate and a first multi-layered wiring layer are stacked, a second substrate on which a circuit having a predetermined function is formed, and a second semiconductor substrate and a second multi-layered wiring layer are stacked, and a third substrate on which a circuit having a predetermined function is formed, and a third semiconductor substrate and a third multi-layered wiring layer are stacked. The first substrate, the second substrate, and the third substrate are stacked in this order. A first coupling structure for electrically coupling a circuit of the first substrate and the circuit of the second substrate to each other does not include a coupling structure formed from the first substrate as a base over bonding surfaces of the first substrate and the second substrate.

Abstract: The present invention enables provision of a production method for 1,2,3,5,6-pentathiepane, the method comprising, in the following order, step A for reacting a trithiocarbonate, sulfur, and a methane dihalide together using a phase-transfer catalyst in a multilayer system having a water layer and an organic layer, step B for separating the water layer from the organic layer, and step C for stopping the reaction using an acid.

Abstract: Provided is an imaging device including: a first semiconductor substrate provided with a photoelectric conversion element, a second semiconductor substrate stacked on the first semiconductor substrate with an interlayer insulating film interposed therebetween and provided with a pixel circuit that reads out charges generated in the photoelectric conversion element as a pixel signal, and a via that penetrates the interlayer insulating film and electrically connects a first surface of the first semiconductor substrate facing the second semiconductor substrate and at least a part of a second surface of the second semiconductor substrate facing the first surface.

Abstract: Provided is a composition for optical materials that gives optical materials which can have at least one improved property selected from among satisfactory mold releasability after polymerization and curing, unsusceptibility to separation from the mold during polymerization and curing, transparency, and low-level striae. The present invention further provides a compound represented by formula (1). The composition for optical materials comprises the compound represented by formula (1) and a compound represented by formula (2). (In formula (1), X1 and X2 represent O or S, provided that both X1 and X2 are O or that X1 is O and X2 is S.

Abstract: A solid-state imaging device including a first substrate having a pixel unit formed thereon and including a first semiconductor substrate and a first multi-layered wiring layer stacked, a second substrate having a circuit formed thereon and including a second semiconductor substrate and a second multi-layered wiring layer, the circuit having a predetermined function, and a third substrate having a circuit formed thereon and including a third semiconductor substrate and a third multi-layered wiring layer. The first substrate and the second substrate are bonded together such that that the first multi-layered wiring layer and the second semiconductor substrate are opposed to each other. The solid-state imaging device includes a first coupling structure and a second coupling structure. The first coupling structure electrically couples a circuit of the first substrate and the circuit of the second substrate.

Abstract: An imaging device according to an embodiment of the present disclosure includes: a first wiring layer; a first insulating film; and a second insulating film. The first wiring layer includes a plurality of first wiring lines that extends in one direction. The plurality of first wiring lines each has a notch at at least one of ends of one surface in a cross section orthogonal to an extending direction. The first insulating film covers a surface of the first wiring layer. The second insulating film is stacked on the first insulating film. The second insulating film forms a gap between the plurality of adjacent first wiring lines.

Abstract: An optical resin material for chromatic aberration correction is provided including at least 5% by mass of a compound (component A) represented by formula (1) or formula (3), in which R1 to R6 each independently represent a structure represented by formula (2), in which the broken line represents a binding site; n1 represents an integer of 0 to 3; n2 represents an integer of 0 or 1; n3 represents an integer of 0 to 4; R7 represents hydrogen, an acryl group, a methacryl group, a cyanoacryl group, a cyclic ether group, an allyl group, a propargyl group, a hydroxy group, an isocyanate group, chlorine, or an optionally branched alkyl group having 1 to 8 carbon atoms; and X represents an alkylene glycol chain having 2 to 7 carbon atoms or a lactone-modified ketone chain, in which R1 to R6 each independently represent a structure represented by formula (2).

Abstract: A composition for an optical material contains (a) an episulfide compound, (b) a polymerization catalyst, and (c) an ester compound having a halogen at the ? position. The (c) ester compound having a halogen at the a position is preferably at least one compound selected from the group consisting of dimethyl chloromalonate, diethyl chloromalonate, dimethyl bromomalonate, and diethyl bromomalonate.

Abstract: A solid-state imaging device includes first through third substrates. The first substrate includes a first semiconductor substrate and a first multi-layered wiring layer stacked thereon. The second substrate includes a second semiconductor substrate and a second multi-layered wiring layer stacked thereon. The third substrate includes a third semiconductor substrate and a third multi-layered wiring layer stacked thereon. A coupling structure for electrically coupling at least two of the first through third substrates includes a via. The via exposes a predetermined wiring line in the second multi-layered wiring layer while exposing a portion of a predetermined wiring line in the first multi-layered wiring layer from a back surface side of the first substrate, or exposes a predetermined wiring line in the third multi-layered wiring layer while exposing a portion of the predetermined wiring line in the first multi-layered wiring layer or the second multi-layered wiring layer from the back surface.

Abstract: A solid-state imaging device including: a first substrate having a pixel unit, and a first semiconductor substrate and a first wiring layer; a second substrate with a circuit, and a second semiconductor substrate and a second wiring layer; and a third substrate with a circuit, and a third semiconductor substrate and a third wiring layer. The first and second substrates are bonded together such that the first wiring layer and the second semiconductor substrate are opposed to each other. The device includes a first coupling structure for electrically coupling a circuit of the first substrate and the circuit of the second substrate. The first coupling structure includes a via in which electrically-conductive materials are embedded in a first through hole that exposes a wiring line in the first wiring layer and in a second through hole that exposes a wiring line in the second wiring layer or a film-formed structure.

Abstract: There is provided a semiconductor device that can minimize deterioration of performance of a capacitor due to a bonding process. Between a first substrate and a second substrate bonded to each other, the semiconductor device includes a first electrode which is provided in the first substrate and of which one surface is positioned on the same surface as a bonding surface between the first substrate and the second substrate, and a second electrode which is provided in the second substrate and of which one surface is positioned on the same surface as a bonding surface and bonded to one surface of the first electrode. Therefore, the semiconductor device includes at least one of a first capacitor which is provided in the first substrate and of which one electrode is electrically connected to a non-exposed surface of the first electrode and a second capacitor which is provided in the second substrate and of which one electrode is electrically connected to a non-exposed surface of the second electrode.

Abstract: A solid-state imaging device is provided that comprises a first substrate that includes a first multi-layered wiring layer stacked on a first semiconductor substrate, a second substrate that includes a second multi-layered wiring layer and an insulating layer stacked on a second semiconductor substrate, and a third substrate that includes a third multi-layered wiring layer stacked on a third semiconductor substrate. A first coupling structure electrically couples the first and second substrates to each other. A second coupling structure exists on bonding surfaces of the second and third substrates, and includes an electrode junction structure in which electrodes formed on respective bonding surfaces are in direct contact with each other. A first via penetrates the second semiconductor substrate and electrically couples a first electrode to a wiring in the second multi-layered wiring layer. A second via electrically couples the second electrode to another wiring in the third multi-layered wiring layer.

Abstract: To provide a solid-state imaging device and an electronic apparatus with further improved performance. A solid-state imaging device including: a first substrate on which a pixel unit is formed, and a first semiconductor substrate and a first multi-layered wiring layer are stacked; a second substrate on which a circuit having a predetermined function is formed, and a second semiconductor substrate and a second multi-layered wiring layer are stacked; and a third substrate on which a circuit having a predetermined function is formed, and a third semiconductor substrate and a third multi-layered wiring layer are stacked. The first substrate, the second substrate, and the third substrate are stacked in this order. The pixel unit has pixels arranged thereon. The first substrate and the second substrate are bonded together in a manner that the first multi-layered wiring layer and the second semiconductor substrate are opposed to each other.

Abstract: A solid-state imaging device including: a first substrate having a pixel unit, and a first semiconductor substrate and a first wiring layer; a second substrate with a circuit, and a second semiconductor substrate and a second wiring layer; and a third substrate with a circuit, and a third semiconductor substrate and a third wiring layer. The first and second substrates are bonded together such that the first wiring layer and the second semiconductor substrate are opposed to each other. The device includes a first coupling structure for electrically coupling a circuit of the first substrate and the circuit of the second substrate. The first coupling structure includes a via in which electrically-conductive materials are embedded in a first through hole that exposes a wiring line in the first wiring layer and in a second through hole that exposes a wiring line in the second wiring layer or a film-formed structure.

Abstract: A solid-state imaging device includes a first substrate including a first semiconductor substrate and a first multi-layered wiring layer stacked on the first semiconductor substrate, a second substrate including a second semiconductor substrate and a second multi-layered wiring layer stacked on the second semiconductor substrate, a third substrate including a third semiconductor substrate and a third multi-layered wiring layer stacked on the third semiconductor substrate, and a first coupling structure for electrically coupling the first substrate and the second substrate. The first substrate, the second substrate, and the third substrate are stacked in this order. The first substrate and the second substrate are bonded together such that the first multi-layered wiring layer and the second multi-layered wiring layer are opposed to each other. The first substrate excludes a coupling structure formed from the first substrate as a base over bonding surfaces of the first substrate and the second substrate.

Abstract: [Object] To provide a solid-state imaging device and an electronic apparatus with further improved performance. [Solution] A solid-state imaging device including: a first substrate on which a pixel unit is formed, and a first semiconductor substrate and a first multi-layered wiring layer are stacked; a second substrate on which a circuit having a predetermined function is formed, and a second semiconductor substrate and a second multi-layered wiring layer are stacked; and a third substrate on which a circuit having a predetermined function is formed, and a third semiconductor substrate and a third multi-layered wiring layer are stacked. The first substrate, the second substrate, and the third substrate are stacked in this order. The pixel unit has pixels arranged thereon. The first substrate and the second substrate are bonded together in a manner that the first multi-layered wiring layer and the second semiconductor substrate are opposed to each other.

Abstract: The present invention makes it possible to provide a method for producing a polyfunctional sulfur-containing epoxy compound, the method being characterized in that a polyfunctional thiol is reacted with an epihalohydrin in the presence of a reducing agent to form a polyfunctional sulfur-containing halohydrin, which is then reacted with a basic compound. The reducing agent is preferably at least one selected from the group consisting of sodium borohydride, lithium borohydride, lithium aluminum hydride, diisobutylaluminum hydride, and hydrazine.

Abstract: There is provided a solid-state imaging device including: a first substrate including a first semiconductor substrate and a first wiring layer, the first semiconductor substrate having a pixel unit with pixels; a second substrate including a second semiconductor substrate and a second wiring layer, the second semiconductor substrate having a circuit with a predetermined function; and a third substrate including a third semiconductor substrate and a third wiring layer, the third semiconductor substrate having a circuit with a predetermined function, the first, second, and third substrates being stacked in this order, the first substrate and the second substrate being bonded together with the first wiring layer and the second wiring layer opposed to each other, a first coupling structure on bonding surfaces of the first substrate and the second substrate, and including an electrode junction structure with electrodes formed on the respective bonding surfaces in direct contact with each other.