Abstract: It is an object of this invention to provide a bonding material capable of realizing bonding by metallic bonding at a bonding interface at a lower temperature compared to a bonding material using a metal particle having an average particle diameter of not more than 100 nm and a bonding method. There is provided a bonding material including a metal particle precursor being at least one selected from the group consisting of a particle of a metal oxide, a particle of a metal carbonate, and a particle of a metal carboxylate and having an average particle diameter of 1 nm to 50 ?m and a reducing agent composed of an organic substance, wherein the content of the metal particle precursor is more than 50 parts by mass and not more than 99 parts by mass per 100 parts by mass of the bonding material.

Abstract: There is provided a wiring material including a core layer made of metal and a clad layer made of metal and a fiber in which the core layer is copper or an alloy containing copper and the clad layer is formed of copper or the alloy containing copper and the fiber having a thermal expansion coefficient lower than that of copper, the wiring material having a stacked structure in which at least one surface of the core layer is closely adhered to the clad layer, and the fiber in the clad layer is arranged so as to be parallel to the surface of the core layer.

Abstract: Heat radiation surfaces 7b and 8b of electrode lead frames 7 and 8 make thermal contact with heat radiation members 301 via insulation sheets 10 to dissipate heat from a power semiconductor element 5 to the heat radiation members (thick portions 301). Each of exposed areas of the heat radiation surfaces 7b and 8b and a surface 13b of a mold material (sealing material 13) adjacent to the exposed area produce an uneven step from which either one of the exposed area and the surface 13b adjacent to the exposed area projects. The step side surface formed between the convex surface and the concave surface of the uneven step has an inclined surface 7a or 13a so configured that an obtuse angle can be formed by the inclined surface and the convex surface and by the inclined surface and the concave surface for each.

Abstract: A power semiconductor module includes a power semiconductor element formed with a plurality of control electrodes on one main surface, a first conductor plate bonded by way of a first solder material to one of the main surfaces of the power semiconductor element, and a second conductor plate bonded by way of a second solder material on the other main surface of the power semiconductor element. A first protrusion section protruding from the base section of the applicable first conductor plate and including a first protrusion surface formed over the upper side, is formed over the first conductor plate. A second protrusion section including a second protrusion surface formed facing opposite one of the main surfaces of the power semiconductor element. The first solder material is interposed between the power semiconductor element and the first conductor plate while avoiding the plural control electrodes.

Abstract: A semiconductor power module includes an insulated substrate with a plurality of power semiconductor devices mounted thereon and a heat sink for radiating heat generated from the plurality of power semiconductor devices, wherein the heat sink is integrally molded with a plurality of radiation fins on one surface of a planate base by forging work such that a metallic material filled into a female die of a predetermined shape is pressed by a male die of a predetermined shape, and the insulated substrate is bonded by metallic bonding to another surface of the base of the heat sink opposite the one surface of the base of the heat sink on which the radiation fins are formed.

Abstract: Heat radiation surfaces 7b and 8b of electrode lead frames 7 and 8 make thermal contact with heat radiation members 301 via insulation sheets 10 to dissipate heat from a power semiconductor element 5 to the heat radiation members (thick portions 301). Each of exposed areas of the heat radiation surfaces 7b and 8b and a surface 13b of a mold material (sealing material 13) adjacent to the exposed area produce an uneven step from which either one of the exposed area and the surface 13b adjacent to the exposed area projects. The step side surface formed between the convex surface and the concave surface of the uneven step has an inclined surface 7a or 13a so configured that an obtuse angle can be formed by the inclined surface and the convex surface and by the inclined surface and the concave surface for each.

Abstract: There is provided a conductive sintered layer forming composition and a conductive sintered layer forming method that can lower heating temperature and shorten heating time for a process of accelerating sintering or bonding by sintering of metal nano-particles coated with an organic substance. The conductive sintered layer forming composition may be obtained by utilizing a phenomenon that particles may be sintered at low temperature by mixing silver oxide with metal particles coated with the organic substance and having a grain size of 1 nm to 5 ?m as compared to sintering each simple substance. The conductive sintered layer forming composition of the invention is characterized in that it contains the metal particles whose surface is coated with the organic substance and whose grain size is 1 nm to 5 ?m and the silver oxide particles.

Abstract: A fabrication method for a resin encapsulated semiconductor device includes the steps of: (1) die-bonding a semiconductor device to a first electrical connection metallic terminal of a wiring substrate; (2) electrically connecting an electrode of the semiconductor device and a second electrical connection metallic terminal of the wiring substrate via an electrical connector; (3) surface treating such an assembly by applying a solution to a surface of the assembly and baking the applied solution; and (4) transfer-molding an insulating encapsulating resin onto the surface-treated assembly.

Abstract: A bonding material comprising metal particles coated with an organic substance having carbon atoms of 2 to 8, wherein the metal particles comprises first portion of 100 nm or less, and a second portion larger than 100 nm but not larger than 100 ?m, each of the portions having at least peak of a particle distribution, based on a volumetric base. The disclosure is further concerned with a bonding method using the bonding material.

Abstract: A power module and a power converter device including the power module include: two base plates with their main surfaces facing each other; a semiconductor circuit unit disposed between the two base plates; a connecting member that is connected to the two base plates and forms a housing region in which the semiconductor circuit unit is housed; and an insulating member that is placed between the base plate and the semiconductor circuit unit and secures electrical insulation of the base plate and the semiconductor circuit unit. A rigidity or thickness of the connecting member is less than a rigidity or thickness of the base plate.

Abstract: In an electronic control device that includes two or more kinds of lead-insertion-type parts, including at least a coil and a capacitor, the parts are installed on a support that has a wiring, a terminal structure and mechanically fixing portions; the leads of the above parts are respectively inserted in and electrically connected to holes formed in the wiring portion of the support; the parts and the support are fixed to each other with an adhesion material for fixation; the upper surfaces of the parts are attached to a metallic chasis with a thermally conductive material of a low elasticity modulus interposed in between; the mechanically fixing portions of the support are fixed to the metallic chasis; and the terminal structure of the support is electrically connected to a circuit board that mounts at least a controlling element.

Abstract: A fabrication method for a resin encapsulated semiconductor device includes the steps of: (1) die-bonding a semiconductor device to a first electrical connection metallic terminal of a wiring substrate; (2) electrically connecting an electrode of the semiconductor device and a second electrical connection metallic terminal of the wiring substrate via an electrical connector; (3) surface treating such an assembly by applying a solution to a surface of the assembly and baking the applied solution; and (4) transfer-molding an insulating encapsulating resin onto the surface-treated assembly.

Abstract: A bonding material comprising metal particles coated with an organic substance having carbon atoms of 2 to 8, wherein the metal particles comprises first portion of 100 nm or less, and a second portion larger than 100 nm but not larger than 100 ?m, each of the portions having at least peak of a particle distribution, based on a volumetric base. The disclosure is further concerned with a bonding method using the bonding material.

Abstract: A semiconductor device achieving both electromagnetic wave shielding property and reliability in a heating process upon mounting electronic components. In the semiconductor device, mount devices 5 and 6 mounted on a main surface of a circuit board 1 are provided, the mount devices 5 and 6 are electrically connected to a wiring pattern 4 at the main surface of the circuit board 1, a sealant 7 of an insulating resin is formed to seal the mount devices 5 and 6, metal particles are applied to a surface of the sealant 7, and the metal particles applied are sintered, thereby forming an electromagnetic shielding layer 2, and electrically connecting the electromagnetic shielding layer 2 to a ground pattern 3 of the circuit board 1.

Abstract: A fabrication method for a metal-base/polymer-resin bonded structured body according to the present invention includes the steps of: (1) applying, to a surface of the metal base, a solution containing an organometallic compound decomposable at 350° C. or lower; (2) baking the applied solution in an oxidizing atmosphere to form, on the surface of the metal base, a coating containing an oxide of the metal of the organometallic compound; (3) providing the polymer resin on the coating; and (4) hardening the polymer resin to provide the metal-base/polymer-resin bonded structured body.

Abstract: A bonding material comprising metal particles coated with an organic substance having carbon atoms of 2 to 8, wherein the metal particles comprises first portion of 100 nm or less, and a second portion larger than 100 nm but not larger than 100 ?m, each of the portions having at least peak of a particle distribution, based on a volumetric base. The disclosure is further concerned with a bonding method using the bonding material.

Abstract: A semiconductor device includes a semiconductor chip and leads electrically connected to the electrodes of the semiconductor chip. A hollow radiator base houses the semiconductor device which is molded with high-thermal-conductivity resin having an electrical insulating property. The radiator base has a cooling-medium channel therein or radiating fins on the outside. Alternatively, the radiator base is housed in a second radiator base.

Abstract: A semiconductor power module includes an insulated substrate mounting with a plurality of power semiconductor devices and a heat sink for radiating a heat generated from the plurality of power semiconductor devices, wherein the heat sink is integrally molded with a plurality of radiation fins on one surface of a planate base by forging work such that a metallic material filled into a female die of a predetermined shape is pressed by a male die of a predetermined shape, and the heat sink and the insulated substrate are bonded in metallic bonding with another surface opposite of one surface on which the radiation fins are formed with the base of the heat sink.

Abstract: The inverter has a plurality of arms for conducting or cutting off a current and each arm has a switching device and a first and a second wiring layer for connecting the switching device. The first and second wiring layers of each arm are respectively formed on insulating substrates, and one face of the switching device is fixed to the first wiring layer, and the second wiring layer and the other face of the switching device are electrically connected by a laminal conductor, and the laminal conductor has a first and a second connection, and the first connection of the laminal conductor is fixed to the other face of the switching device, and the second connection of the laminal conductor is fixed to the second wiring layer. Thereby, a large current of the inverter can be realized and the assembly capacity of the inverter or the vehicle drive unit will be improved.

Abstract: A fabrication method for a metal-base/polymer-resin bonded structured body according to the present invention includes the steps of: (1) applying, to a surface of the metal base, a solution containing an organometallic compound decomposable at 350° C. or lower; (2) baking the applied solution in an oxidizing atmosphere to form, on the surface of the metal base, a coating containing an oxide of the metal of the organometallic compound; (3) providing the polymer resin on the coating; and (4) hardening the polymer resin to provide the metal-base/polymer-resin bonded structured body.