Abstract: In a cutting tool optimally used for working a valve hole in a cylinder head of an engine, a U-shaped groove (11) having a U-shaped cross section is formed to extend along a generatrix of a substantially conic tool main body (1), and a slider (160 carrying a cutting tip (5A) is slidably fitted in the U-shaped groove (11). A spacer (12) formed with a serration groove (12a) is detachably mounted between a wall surface (11a) of the U-shaped groove (11) and the slider (16). The slider (16) is formed on its side surface with a serration groove (16a) which engages the serration groove (12a). The slider (16) is biased toward the wall surface (11a) with an elastic force by a biasing means (15) which is provided at another wall surface (11b) of the U-shaped groove (11) and includes a pressing pin (17), a disk spring (18) and a set screw (19).

Abstract: Insulating films formed on side walls of a gate electrode are removed for a self-alignment to selectively implant impurities only into end portions of a source region and a drain region. Therefore, p.sup.+ -type semiconductor regions are selectively formed only on sides near a channel region of the source and the drain regions. A punch through of the source or drain region is prevented by the p.sup.+ -type semiconductor regions controlling an inversion threshold voltage. Therefore, the impurity concentration of the p-type substrate can be settled low, and the semiconductor transistor device can be miniaturized without increasing a parasitic junction capacitance. Moreover, since the impurity concentration in the channel region is ununiform, a drivability of the transistor can be increased. As a result, a semiconductor transistor device with a high withstand voltage and a high drivability in which the inversion threshold voltage can be easily controlled, and a method for producing the same are provided.

Abstract: A fabrication method for semiconductor devices connecting a multi-crystal semiconductor thin film and a semiconductor region including a high density of an impurity formed in a single crystal semiconductor substrate. After forming a N-type semiconductor region as the emitter by ion implanting, for instance, as into a P-type semiconductor region as the base, a polysilicon thin film 114 is deposited so as to be implanted with As ions and then heat treated. In this case, an amorphous portion of the N-type semiconductor region and an amorphous silicon thin film in contact therewith are transformed by solid phase epitaxial growth so as to form a single crystal semiconductor region, a single-crystalline silicon thin film, and a polysilicon thin film, thus forming a bipolar element having an emitter.

Abstract: There is disclosed a method for manufacturing a bipolar semiconductor device in which emitter region and active base region are formed by implanting impurities of first and second conduction types in a first semiconductor region of the first conduction type to be a collector through a non-single crystalline semiconductor thin film, a second semiconductor thin film is formed on the first semiconductor thin film, and an impurity of the first conduction type is introduced in the second semiconductor thin film after patterning the first and second semiconductor thin film so as to form an emitter electrode.

Abstract: A method of fabricating a semiconductor device having gate-drain overlap MOSFETs in which side surfaces of upper portions of gate lines are anisotropically etched using a buffer film as an etch stop is disclosed. An insulating film as a gate insulator is formed on a semiconductor layer of a first conductivity type. A first conductive film is formed on the gate insulator. A buffer film having openings in gate line regions is formed on the first conductive film. A second conductive film is formed on the buffer film. The second conductive film is patterned into wiring shape to form upper portions of gate lines covering the openings of the buffer film. Ions of a second conductivity type are implanted into the semiconductor layer using the upper portions of the gate lines as an implant mask to form sources and drains in the semiconductor layer. Sidewall spacers are formed on the sides of the upper portions of the gate lines.

Abstract: A first semiconductor region is of a first conduction type and forms a transistor collector. A second semiconductor region is of a second conduction type and forms a transistor base. The second semiconductor region extends in the first semiconductor region. A third semiconductor region is of the first conduction type and forms a transistor emitter. The third semiconductor region extends in the second semiconductor region. A fourth semiconductor region is of the first conduction type and has a first portion and a second portion. The first portion extends in a part of the first semiconductor region below an edge of the third semiconductor region, and the second portion extends from the first semiconductor region into a part of the second semiconductor region outward of the edge of the third semiconductor region to limit a width of the transistor base.

Abstract: A method for producing field-effect type semiconductor devices is disclosed which includes the steps of: forming a gate insulator film on a semiconductor substrate; forming a conductor film on the gate insulator film; and implanting impurity ions in the semiconductor substrate through the gate insulator film and the conductor film for the purpose of controlling a threshold voltage of the device, wherein the conductor film is employed as a gate electrode of the device. The method of this invention has the excellent advantages of readily controlling a threshold voltage of field-effect type semiconductor devices and of preventing the scatter of the threshold voltage values. An alternative embodiment employs formation of a second conductor film and implantation from an inclined direction.

Abstract: A semiconductor device such as a Bi-CMOS having vertical or lateral bipolar transistors and MOS transistors is disclosed. The MOS transistors include a gate electrode made of a first conductive thin film, and sidewall spacers formed on the sides of the gate electrode and consisting of at least one deposition film. The vertical bipolar transistors include an emitter electrode made of a second conductive thin film, and an emitter diffusion window formed in the deposition film which is disposed under the emitter electrode. The lateral bipolar transistors include a base width defining region for defining the base width, and an insulation film formed between the base width defining region and the collector and emitter, and consisting of the deposition film.

Abstract: A double wishbone type suspension includes a wheel carrier, a lower control arm having one end swingably connected to the wheel carrier and the other end swingably connected to a vehicle body, a shock absorber having a shell and a piston rod projecting from the shell and disposed with the shell being above and the piston rod being below the shell and an upper control arm having one end swingably connected to the wheel carrier. The shell of the shock absorber is connected to the vehicle through an elastic mount and the piston rod is swingably connected to the lower control arm. The other end of the upper control arm is swingably connected to the shell.

Abstract: An insert rotary cutter for processing a metal workpiece includes a cutter body of a generally circular cross-section having an axis of rotation therethrough. The cutter includes one or more cutter inserts releasably mounted on a periphery of the cutter body. The insert includes a generally quadrilateral plate defined by a front face, a rear face disposed generally parallel to the front face and four side faces. The insert has a pair of main cutting edges defined by the front face and one pair of the opposite side faces. The pair of opposite side faces serve as respective rake surfaces for the main cutting edges. Each of the rake surfaces is convexly curved in such a manner that the width of the insert between the rake surfaces is larger at a central portion of each main cutting edge than at opposite ends of the main cutting edge.

Abstract: An insert rotary cutter for processing a metal workpiece includes a cutter body having an axis of rotation therethrough. The cutter includes at least one cutter insert releasably mounted on an outer periphery of the body. The insert is of a generally polygonal shape having a curved front face. The front face has a pair of opposed marginal ridges serving as respective main cutting edges. The front face has marginal portions disposed adjacent and extending along the main cutting edges, and the marginal portions serve as respective rake surfaces for the main cutting edges. Each of the rake surface is convexly curved as viewed from a respective one of the main cutting edges and is concavely curved as viewed along a respective one of the main cutting edges.

Abstract: An insert rotary cutter incldues a cutter body having an axis of rotation therethrough. The cutter body has a plurality of pockets formed in one end thereof in circumferentially distributed relation. A plurality of support members are attached respectively to the pockets. Each of the support members has a recess being open radially and axially outwardly of the cutter body. A plurality of polygonal cutter inserts are positioned respectively in the recesses. The recesses have a depth of one third to two thirds of a thickness of the cutter insert. A plurality of clamp wedges respectively clamp the cutter inserts to the cutter body through the support members.

Abstract: An insert cutter includes a body having at least one generally radially outwardly-opening recess disposed adjacent a forward end face thereof. A cutter insert is received in the recess. The insert is a polygonal shape having a front face, a rear face and side faces. Each corner portion where adjacent side faces intersect each other is removed to provide first and second corner faces. The insert has main cutting edges each defined by the front face and a respective one of the side faces, auxiliary cutting edges each defined by the front face and a respective one of the first corner faces, and corner cutting edges each defined by the front face and a respective one of the second corner faces. Each side face serves as a flank of a respective one of the main cutting edges with a positive clearance angle A. Each first corner face serves as a flank of a respective one of the auxiliary cutting edges with a positive clearance angle B.

Abstract: An indexable cutter insert for a rotary cutter includes a generally polygonal plate defined by a front face, a rear face and a plurality of side faces. The corner portions of the plate where adjacent side faces intersect one another are removed to provide respective corner faces. The plate has a plurality of main cutting edges each defined by the front face and a respective one of the side faces and a plurality of auxiliary cutting edges each defined by the front face and a respective one of the corner faces. Each side face serves as a relief surface of a respective one of the main cutting edges. A forward portion of each corner face remote from the rear face serves as a relief surface of a respective one of the auxiliary cutting edges. A rearward portion of each corner face remote from the front face is offset inwardly from the forward portion to provide a clearance surface. The clearance surface extends from the rear face to a plane generally centrally of the thickness of the plate.

Abstract: A cutter insert of the indexable type comprises a plate of a generally quadrilateral shape including a front face, a rear face and four side faces. The cutter insert has two peripheral cutting edges defined by two opposite side faces and the front face. A pair of notches are formed in two diagonal corners of the cutter insert, and the other two diagonal corners are chamfered to provide respective corner faces which define together with the front face a pair of end cutting edges.

Abstract: A cutter for processing a surface of a metal workpiece includes a body of a generally circular cross-section. The body has a plurality of generally radially outwardly-opening recesses formed in a circumferential surface of the body in circumferentially spaced relation to each other. Each of the recesses includes a first bearing surface sloping radially outwardly in a direction away from a forward end face of the body and extending to the circumferential surface. The recess also includes a second bearing surface sloping radially outwardly toward the forward end face. The second bearing surface is disposed forwardly of the first bearing surface and disposed at a predetermined angle relative to the first bearing surface. A plurality of cutter inserts of a quadrilateral shape are received in the plurality of recesses, respectively. Two adjacent side faces of the insert are held in contact with the first and second bearing surfaces, respectively.

Abstract: An electronic chime wherein at least two different audible frequency signals forming chime sound are generated by a frequency divider oscillated by an oscillating circuit capable of adjusting its output standard frequency clock pulse. These audible frequency signals are respectively amplitude modulated so as to be attenuated stepwise, and the chime sound is generated by such modulated signals and caused to disappear at attenuated state.