Abstract: A cheap and high performance 1.5 transistor-type flash memory highly compatible externally of a memory region has a sacrifice film formed on a substrate. A U-shaped groove is formed on the sacrifice film, where multiple insulating films are laminated. The multiple insulating films includes a silicon nitride film as a charge storage layer. Low resistive material is disposed on the multiple insulating films to form a control gate. The select gate is formed on the insulating film on a side of the control gate in a self-aligned manner. Semiconductor regions opposite in conductivity to the substrate on both sides of the adjoining control gate and the select gate form a source and a drain, respectively. Thus, a 1.5 transistor-type flash memory is formed with the adjoining control gate and the select gate between the source and the drain.

Abstract: A technology precluding attacks through peripheral devices thefts to a network of electronic appliance, by utilizing physical chip identification devices, is disclosed. The electronic appliance in the network are divided into the peripheral devices and stem servers managing registration information of the peripheral devices, wherein the stem servers serve as central control using software, and the peripheral devices are managed at device-level by having physical chip identification devices, thus the security of the whole network is efficiently reinforced.

Abstract: A power loss protection integrated circuit includes a current switch circuit (eFuse), a VIN terminal, a VOUT terminal, a buck/boost controller, and a storage capacitor terminal STR. The controller is adapted to work: 1) as a boost to take a low voltage from the VOUT terminal and to output a larger charging voltage onto the STR terminal, or 2) as a buck to take a higher voltage from the STR terminal and to buck it down to a lower voltage required on the VOUT terminal. The current switch circuit outputs a digital undervoltage signal (UV) and a digital high current signal (HC). These signals are communicated on-chip to the controller. Asserting UV causes the converter to begin operating in the buck mode. Asserting HC prevents the converter from operating in the boost mode.

Abstract: The present invention aims to provide antidementia agents which are free from the problem of side effects and are excellent in safety. The present invention also aims to provide agents for improving learning and memory which are useful for improvement of learning and memory and can be ingested continuously. The present invention provides antidementia agents and agents for improving learning and memory, each comprising a cyclic dipeptide with the 2,5-diketopiperazine structure as an active ingredient.

Abstract: The present invention provides a mask blank used to produce a halftone phase shift mask to which ArF excimer laser exposure light is to be applied. The present invention attains the object by providing the mask blank comprising a transparent substrate, and a light semitransmissive layer formed on the transparent substrate and made only of Si and N or a light semitransmissive layer formed on the transparent substrate and made only of Si, N and O, wherein the light semitransmissive layer has an extinction coefficient of 0.2 to 0.45 at a wavelength of ArF excimer laser exposure light, a refractive index of 2.3 to 2.7 at the wavelength of ArF excimer laser exposure light, and a transmittance of 15 to 38% at the wavelength of ArF excimer laser exposure light, and further has a layer thickness of 57 to 67 nm.

Abstract: A network of electronic appliances includes a plurality of network units of electronic appliances. The network units include a first network unit and a plurality of second network units. The first network unit is connected to at least one of the second network units. Each of the network units includes a stem server and a plurality of peripheral devices connected to the stem server. The stem server includes at least one passcode and at least one list of a plurality of registration codes. Each list is associated to a respective passcode. Each registration code of one list associating to one passcode corresponds to a respective peripheral device. Each registration code is generated in response to a respective passcode using physical randomness of a respective peripheral device in correspondence to the passcode. An address of each identification cell is defined by several word lines and bit lines.

Abstract: A network of electronic appliances includes a plurality of network units of electronic appliances. The network units include a first network unit and a plurality of second network units. The first network unit is connected to at least one of the second network units. Each of the network units includes a stem server and a plurality of peripheral devices connected to the stem server. The stem server includes at least one passcode and at least one list of a plurality of registration codes. Each list is associated to a respective passcode. Each registration code of one list associating to one passcode corresponds to a respective peripheral device. Each registration code is generated in response to a respective passcode using physical randomness of a respective peripheral device in correspondence to the passcode. An address of each identification cell is defined by several word lines and bit lines.

Abstract: In accordance with an embodiment, the image forming apparatus comprises a display section, a connection section and a controller. The connection section connects with a device having a storage section. The controller detects connection and disconnection with the connection section and does not display a first screen displayed on the display section due to the connection with the device if the disconnection is detected.

Abstract: The present techniques relate to a semiconductor device having resistance which has a positive temperature coefficient and a suitable value, and to a method for manufacturing a semiconductor device having resistance which has a positive temperature coefficient and a suitable value. The semiconductor device related to the present techniques is a bipolar device in which a current flows through a pn junction. The semiconductor device includes an n-type silicon carbide drift layer, a p-type first silicon carbide layer formed on the silicon carbide drift layer, and a p-type second silicon carbide layer formed on the first silicon carbide layer. Then, the second silicon carbide layer has a positive temperature coefficient of resistance.

Abstract: An integrated circuit, a code generating method, and a data exchange method are described. The integrated circuit includes a plurality of field effect transistors, a plurality of sense-amplifiers, and a processing circuit. Each field effect transistor is configured to represent an address in a mapping table and includes a source, a drain, a channel and a gate. Each sense-amplifier is connected to the drain and configured to sense an electric current from the drain and identify a threshold voltage of the corresponding field effect transistor. The processing circuit is configured to categorize each of the threshold voltages identified by the corresponding sense-amplifiers into a first state and a second state and mark the state of each of the threshold voltages at the corresponding address in the mapping table.

Abstract: The present invention includes an end mill body which is formed of ceramic, a chip discharge flute which is formed on an outer periphery of the end mill body, a peripheral cutting edge which is formed on an intersection ridge line between a wall surface facing a tool rotation direction in the chip discharge flute and an outer peripheral surface of the end mill body, an end cutting edge which is formed on an intersection ridge line between the wall surface in the chip discharge flute and a tip surface of the end mill body, and a corner cutting edge which is positioned at a tip outer-peripheral part of the end mill body, connects an outer end of the end cutting edge and a tip of the peripheral cutting edge to each other, and has a convexly curved shape which is convex toward a tip outer-peripheral side of the end mill body.

Abstract: [Problem] To provide a rotary damper wherein damping torque generated by rotation can be easily adjusted using a simple configuration. [Solution] A rotary damper 1 limits the movement of viscous fluid contained in a circular cylinder chamber 111, thereby generating damping torque against applied rotational force. This rotary damper 1 is configured such that: a lid 15 is screwed into a case 11; and the gap g1 between the lower surface 153 of the lid 15 and the upper surface 119 of a partition section 115 and the gap g2 between the lower surface 153 of the lid 15 and the upper surface 129 of a vane 122 can be adjusted by adjusting the amount of screwing of the lid 15 into the case 11. This means that adjusting the amount of movement of viscous fluid through the gaps g1, g2 can adjust damping torque generated by rotation.

Abstract: In a manufacturing method for a thermistor element (3) including: a thermistor portion (49) which is a sintered body formed from a thermistor material; and a pair of electrode wires (25) which are embedded in the thermistor portion (49) and at least one end portion of each of the electrode wires projects at an outer side of the thermistor portion (49), the resistance value of the thermistor element (3) is adjusted by performing a removal processing of removing a part of the thermistor portion (49).

Abstract: A power loss protection integrated circuit includes a current switch circuit portion (eFuse) and an autonomous limit checking circuit. The limit checking circuit includes an input analog multiplexer, an ADC, a plurality of capture registers, a state machine, and a flag output terminal. For each capture register, the limit checking circuit further includes an associated lower limit register and an associated upper limit register. The state machine controls the multiplexer and the capture registers so the ADC digitizes voltages on various nodes to the monitored, and stores the results into corresponding capture registers. In integrated circuit has circuitry that allows both a high voltage as well as a high current to be monitored. The value in a capture register is compared to upper and lower limit values. If any capture value is determined to be outside the limits, then a digital flag signal is asserted onto the flag output terminal.

Abstract: A sintered electroconductive oxide having a perovskite oxide type crystal structure represented by a compositional formula: M1aM2bMncAldCreOf wherein M1 represents at least one element selected from group 3 elements; and M2 represents at least one element selected from among Mg, Ca, Sr and Ba, wherein element M1 predominantly includes at least one element selected from Nd, Pr and Sm, and a, b, c, d, e and f satisfy the following relationships: 0.6005?a<1.000, 0<b?0.400, 0?c<0.150, 0.400?d<0.950, 0.050<e?0.600, 0.50<e/(c+e)?1.00, and 2.80?f?3.30. Also disclosed is a thermistor element including a thermistor portion which is formed of the sintered electroconductive oxide as well as a temperature sensor employing the thermistor element.

Abstract: A network management method executed by a processor included in a network managing device configured to manage a network in which a plurality of wavelength-multiplexed optical signals is transmitted, the method includes determining an active path and an auxiliary path for each of the plurality of optical signals; allocating, for each of links coupling adjacent nodes included in the network to each other, frequency bands to be used for the optical signals to the active paths for the optical signals so that frequency bands for the maximum rates of transmitting the optical signals do not overlap each other; and allocating, for each of the links, unallocated frequency bands within the frequency bands for the maximum transmission rates to the auxiliary paths for the optical signals.

Abstract: A exhaust gas recirculation apparatus includes a throttle body; an intake manifold configured to distribute intake air to each intake port in an engine; an adapter member including a through channel capable of guiding the intake air to the intake manifold from the throttle body; and a gas supply path capable of guiding part of exhaust gas to an intake system from an exhaust system. The adapter member includes an inlet port, a discharge port, and a coupling channel. A first opening is wider than a second opening when the discharge port is divided into the first opening and the second opening at an imaginary plane, serving as a boundary, which includes a center line of a valve shaft and which extends along an extending-through direction of the through channel.

Abstract: Synthesizing methanol from a synthesis gas and separating an unreacted gas from a reaction mixture obtained by passing through the synthesis step, the method including a synthesis loop having at least two synthesis steps and at least two separation steps; obtaining a first mixed gas by increasing through a circulator a pressure of a residual gas, obtained by removing a purge gas from the final unreacted gas separated from the final reaction mixture subsequent to the final synthesis step, and by mixing the residual gas with a fraction of a make-up gas; synthesizing methanol; separating a first unreacted gas from the first reaction mixture obtained in the synthesizing step; obtaining a second mixed gas by mixing the first unreacted gas and a fraction of the make-up gas; finally synthesizing methanol; and separating the final unreacted gas from the final reaction mixture obtained in the final synthesis step.

Abstract: A cheap and high performance 1.5 transistor-type flash memory highly compatible to external of memory region is provided. The flash memory has sacrifice film formed on substrate. U-shaped groove is formed on sacrifice film, where multiple insulating film is laminated. Multiple insulating film includes silicon nitride film as charge storage layer. Low resistive material is disposed on multiple insulating film to form control gate. Select gate is formed on insulating film on side of control gate in self-aligned manner. Semiconductor regions opposite in conductivity to substrate on both sides of adjoining control gate and select gate to form source and drain, respectively. Thus, a 1.5 transistor-type flash memory is formed with adjoining control gate and select gate between source and drain. In MOS-type transistor with control gate, threshold voltage is changeable according to injection/emission of charge to silicon nitride as charge storage layer, and thus work as non-volatile memory.

Abstract: An object of the present invention is to provide a silicon carbide semiconductor device with which the electric field at the time of switching is relaxed and the element withstand voltage can be enhanced. The distance between the outer peripheral end of a second surface electrode and the inner peripheral end of a field insulation film is smaller than the distance between an outer peripheral end of the second surface electrode and an inner peripheral end of the field insulation film in the case where the electric field strength applied to the outer peripheral lower end of the second surface electrode is calculated so as to become equal to the smallest dielectric breakdown strength among the dielectric breakdown strength of the field insulation film and the dielectric breakdown strength of the surface protective film at the time of switching when the value of dV/dt is greater than or equal to 10 kV/?s.