Abstract: A CPU 11 of a boundary line detection device 10 according to an embodiment of the present invention is configured to function as an image acquisition component 112 that acquires images captured (inputted) via an image input device (a camera or the like), captured images received via a network, and so forth, and a boundary line detector 114 that detects a boundary line included in these captured images. The boundary line detector 114 is configured to specify, using a learned model 152, a plurality of estimated points estimated to be points on a boundary line included in a captured image and to detect the boundary line included in the captured image on the basis of at least the specified estimated points.

Abstract: A photodetector according to an embodiment includes: a first semiconductor layer; a porous semiconductor layer disposed on the first semiconductor layer; and at least one photo-sensing element including a second semiconductor layer of a first conductivity type disposed in a region of the porous semiconductor layer and a third semiconductor layer of a second conductivity type disposed on the second semiconductor layer.

Abstract: A CPU 11 of a boundary line detection device 10 according to an embodiment of the present invention is configured to function as an image acquisition component 112 that acquires images captured (inputted) via an image input device (a camera or the like), captured images received via a network, and so forth, and a boundary line detector 114 that detects a boundary line included in these captured images. The boundary line detector 114 is configured to specify, using a learned model 152, a plurality of estimated points estimated to be points on a boundary line included in a captured image and to detect the boundary line included in the captured image on the basis of at least the specified estimated points.

Abstract: A liquid crystal optical device includes: a first electrode unit including a first substrate transparent to light, a light-transmitting layer formed on the first substrate, and a first electrode formed on the light-transmitting layer and being transparent to light, the light-transmitting layer including recesses formed on a surface facing the first electrode, arranged in a first direction, and extending in a second direction; a second electrode unit including a second substrate, the second substrate being transparent to light, and two second electrodes formed on the second substrate, the second electrodes being arranged in the second direction and extending along the first direction; a liquid crystal layer located between the first and second electrode units; a first polarizing plate located on an opposite side of the second electrode unit from the liquid crystal layer; and a drive unit that applies voltages to the first and second electrodes.

Abstract: A photodetector according to an embodiment includes: a first semiconductor layer; a porous semiconductor layer disposed on the first semiconductor layer; and at least one photo-sensing element including a second semiconductor layer of a first conductivity type disposed in a region of the porous semiconductor layer and a third semiconductor layer of a second conductivity type disposed on the second semiconductor layer.

Abstract: A photodetector according to an embodiment includes: a semiconductor substrate including a first region and a second region adjacent to the first region; at least one light detection cell including a first semiconductor layer disposed in the first region, a second semiconductor layer disposed between the first semiconductor layer and the semiconductor substrate and including a junction portion with the first semiconductor layer, a third semiconductor layer disposed in the semiconductor substrate separately from the second semiconductor layer, a first electrode on the semiconductor substrate and applying a voltage to the first semiconductor layer, and a second electrode on the semiconductor substrate and applying a voltage to the third semiconductor layer; and a light guide disposed in the second region and guiding incident light to be propagated in a first direction to the junction portion between the first semiconductor layer and the second semiconductor layer.

Abstract: According to an embodiment, a color filter array includes a plurality of color filters of multiple colors. The color filters are arranged so that each of the color filter of each color corresponds to any one of a plurality of microlenses included in a microlens array. Each microlens is configured to irradiate a plurality of pixels with light.

Abstract: According to an embodiment, a microlens array for a solid-state image sensing device includes a plurality of microlenses and a state detector. The plurality of microlenses are disposed in an imaging microlens area and is configured to form two-dimensional images. The state detector is disposed on a periphery of the imaging microlens area and is configured to, on an image forming surface of the microlenses, generate images having a smaller diameter than images formed by the microlenses.

Abstract: A solid state imaging device according to an embodiment includes: a liquid crystal optical element including a first electrode having a first recess and a projecting portion surrounding the first recess on a first surface, a second electrode facing the first surface of the first electrode, a filling film located between the first recess of the first electrode and the second electrode, and a liquid crystal layer located between the filling film and the second electrode; an imaging lens facing the second electrode to form an image of a subject on an imaging plane; and an imaging element facing the first recess, the imaging element having a pixel block having a plurality of pixels.

Abstract: An apparatus includes: a current control unit to control an amount of constant current and supply a first and second constant currents to an infrared detection pixel; a constant current supply time control unit to control periods of time in which the first and second constant currents are supplied to the infrared detection pixel; an A-D converter to convert a first and second electrical signals from the infrared detection pixel into a first and second digital signals, the first and second electrical signals being generated when the first and second constant currents is supplied to the infrared detection pixel, respectively; a subtracting unit to calculate a difference between the first and second digital signals; and a determining unit to determine whether the infrared detection pixel is a defective pixel based on the absolute value of the difference calculated by the subtracting unit.

Abstract: A solid state imaging device according to an embodiment includes: an imaging element formed on a semiconductor substrate, and including pixel blocks each having pixels; a main lens forming an image of a subject on an imaging plane; a microlens array including microlenses corresponding to the pixel blocks, the microlens array reducing an image to be formed on the imaging plane by Nf times or less and forming reduced images on the pixel blocks corresponding to the respective microlenses; and an image processing unit enlarging and synthesizing the reduced images formed by the microlenses, the solid state imaging device meeting conditions of an expression MTFMain(u)?MTFML(u)?MTFMain(u×Nf) where u denotes an image spatial frequency, MTFML(u) denotes an MTF function of the microlenses, and MTFMain(u) denotes an MTF function of the main lens.

Abstract: According to one embodiment, an imaging lens includes a first optical system and a microlens array. The first optical system includes an optical axis. The microlens array is provided between the first optical system and an imaging element. The microlens array includes microlens units provided in a first plane. The imaging element includes pixel groups. Each of the pixel groups includes pixels. The microlens units respectively overlap the pixel groups when projected onto the first plane. The first optical system includes an aperture stop, and first, second, and third lenses. The first lens is provided between the aperture stop and the microlens array, and has a positive refractive power. The second lens is provided between the first lens and the microlens array, and has a negative refractive power. The third lens is provided between the second lens and the microlens array, and has a positive refractive power.

Abstract: According to one embodiment, an imaging lens includes a first optical system and a microlens array. The first optical system includes an optical axis. The microlens array is provided between the first optical system and an imaging element. The microlens array includes microlens units provided in a first plane. The imaging element includes pixel groups. Each of the pixel groups includes pixels. The microlens units respectively overlap the pixel groups when projected onto the first plane. The first optical system includes an aperture stop, a first lens, a second lens, a third lens, and a fourth lens. The first lens is provided between the aperture stop and the microlens array. The second lens is provided between the first lens and the microlens array. The third lens is provided between the second lens and the microlens array. The fourth lens is provided between the third lens and the microlens array.

Abstract: An imaging device according to an embodiment includes: a semiconductor substrate; a reference pixel with a first concave portion disposed in a first portion of a surface of the semiconductor substrate; and one or more infrared detection pixels each configured to detect light with a second concave portion disposed in a second portion of the surface of the semiconductor substrate, the reference pixel being directly connected to the semiconductor substrate at a position where the first concave portion is not present, and including a first thermoelectric conversion unit configured to convert heat to an electric signal, the first thermoelectric conversion unit being disposed in the first concave portion and including a first thermoelectric conversion element, each infrared detection pixel including a second thermoelectric conversion unit being disposed in the second concave portion and including a second thermoelectric conversion element.

Abstract: A solid-state imaging device according to an embodiment includes: an imaging element including an imaging area formed with a plurality of pixel blocks each including pixels; a first optical system forming an image of an object on an imaging surface; and a second optical system re-forming the image, which has been formed on the imaging surface, on the pixel blocks corresponding to microlenses, the second optical system including a microlens array formed with the microlenses provided in accordance with the pixel blocks. The microlenses are arranged in such a manner that an angle ? between a straight line connecting center points of adjacent microlenses and one of a row direction and a column direction in which the pixels are aligned is expressed as follows: ?>sin?1(2dp/Dml), where Dml represents microlens pitch, and dp represents pixel pitch.

Abstract: An imaging device according to an embodiment includes: a semiconductor substrate; a reference pixel with a first concave portion disposed in a first portion of a surface of the semiconductor substrate; and one or more infrared detection pixels each configured to detect light with a second concave portion disposed in a second portion of the surface of the semiconductor substrate, the reference pixel being directly connected to the semiconductor substrate at a position where the first concave portion is not present, and including a first thermoelectric conversion unit configured to convert heat to an electric signal, the first thermoelectric conversion unit being disposed in the first concave portion and including a first thermoelectric conversion element, each infrared detection pixel including a second thermoelectric conversion unit being disposed in the second concave portion and including a second thermoelectric conversion element.

Abstract: A solid-state imaging device according to an embodiment includes: an imaging element including an imaging area formed with a plurality of pixel blocks each including pixels; a first optical system forming an image of an object on an imaging surface; and a second optical system re-forming the image, which has been formed on the imaging surface, on the pixel blocks corresponding to microlenses, the second optical system including a microlens array formed with the microlenses provided in accordance with the pixel blocks. The microlenses are arranged in such a manner that an angle ? between a straight line connecting center points of adjacent microlenses and one of a row direction and a column direction in which the pixels are aligned is expressed as follows: ?>sin?1(2dp/Dml), where Dml represents microlens pitch, and dp represents pixel pitch.

Abstract: A microlens array unit according to an embodiment includes: a substrate; a first group of microlenses including first microlenses having a convex shape and a first focal length, the first group of microlenses being arranged on the substrate; and a second group of microlenses including second microlenses having a convex shape and a second focal length different from the first focal length, the second group of microlenses being arranged on the substrate, a first imaging plane of the first group of microlenses and a second imaging plane of the second group of microlenses being parallel to each other, a distance between the first and second imaging planes in a direction perpendicular to the first imaging plane being 20% or less of the first focal length, and images of the first microlenses projected on the substrate not overlapping images of the second microlenses projected on the substrate.

Abstract: According to one embodiment, an imaging lens includes a first optical system and a microlens array. The first optical system includes an optical axis. The microlens array is provided between the first optical system and an imaging element. The microlens array includes microlens units provided in a first plane. The imaging element includes pixel groups. Each of the pixel groups includes pixels. The microlens units respectively overlap the pixel groups when projected onto the first plane. The first optical system includes an aperture stop, a first lens, a second lens, a third lens, and a fourth lens. The first lens is provided between the aperture stop and the microlens array. The second lens is provided between the first lens and the microlens array. The third lens is provided between the second lens and the microlens array. The fourth lens is provided between the third lens and the microlens array.

Abstract: According to one embodiment, an imaging lens includes a first optical system and a microlens array. The first optical system includes an optical axis. The microlens array is provided between the first optical system and an imaging element. The microlens array includes microlens units provided in a first plane. The imaging element includes pixel groups. Each of the pixel groups includes pixels. The microlens units respectively overlap the pixel groups when projected onto the first plane. The first optical system includes an aperture stop, and first, second, and third lenses. The first lens is provided between the aperture stop and the microlens array, and has a positive refractive power. The second lens is provided between the first lens and the microlens array, and has a negative refractive power. The third lens is provided between the second lens and the microlens array, and has a positive refractive power.