Abstract: According to an embodiment, a microlens array for a solid-state image sensing device includes a plurality of microlenses and a state detector. The plurality of microlenses are disposed in an imaging microlens area and is configured to form two-dimensional images. The state detector is disposed on a periphery of the imaging microlens area and is configured to, on an image forming surface of the microlenses, generate images having a smaller diameter than images formed by the microlenses.

Abstract: According to an embodiment, a color filter array includes a plurality of color filters of multiple colors. The color filters are arranged so that each of the color filter of each color corresponds to any one of a plurality of microlenses included in a microlens array. Each microlens is configured to irradiate a plurality of pixels with light.

Abstract: A solid-state imaging device according to an embodiment includes: an imaging element including a semiconductor substrate and a plurality of pixel blocks, each of the pixel blocks including at least two of R pixels, G pixels, B pixels, and W pixels; a first optical system configured to form an image of an object on an imaging plane; and a second optical system including a microlens array having a plurality of microlenses provided for the respective pixels blocks, the second optical system being located between the imaging element and the first optical system, the second optical system being configured to reduce and re-image the image formed on the imaging plane onto each of the pixel blocks. A proportion of the W pixels to be provided increases in a direction from a center of each pixel block toward an outer periphery thereof.

Abstract: A microlens array unit according to an embodiment includes: a substrate; a first group of microlenses including first microlenses having a convex shape and a first focal length, the first group of microlenses being arranged on the substrate; and a second group of microlenses including second microlenses having a convex shape and a second focal length different from the first focal length, the second group of microlenses being arranged on the substrate, a first imaging plane of the first group of microlenses and a second imaging plane of the second group of microlenses being parallel to each other, a distance between the first and second imaging planes in a direction perpendicular to the first imaging plane being 20% or less of the first focal length, and images of the first microlenses projected on the substrate not overlapping images of the second microlenses projected on the substrate.

Abstract: A solid state imaging device according to an embodiment includes: a pixel array including a plurality of pixel blocks on a first surface of a semiconductor substrate, each pixel block having a first to third pixels each having a photoelectric conversion element, the first pixel having a first filter with a higher transmission to a light in a first wavelength range, the second pixel having a second filter with a higher transmission to a light in a second wavelength range having a complementary color to a color of the light in the first wavelength range, and the third pixel having a third filter transmitting lights in a wavelength range including the first and second wavelength ranges; a readout circuit reading signal charges from the first to the third pixels; and a signal processing circuit processing the signal charges.

Abstract: An infrared imaging module according to an embodiment includes: an infrared imaging element including a semiconductor substrate having a recessed portion, and a pixel portion formed on the recessed portion, the pixel portion converting infrared rays to electrical signals; and a lid including a lens portion facing the pixel portion, and a flat plate portion surrounding the lens portion, the flat plate portion being bonded to the semiconductor substrate.

Abstract: A solid state imaging device according to an embodiment includes: a liquid crystal optical element including a first electrode having a first recess and a projecting portion surrounding the first recess on a first surface, a second electrode facing the first surface of the first electrode, a filling film located between the first recess of the first electrode and the second electrode, and a liquid crystal layer located between the filling film and the second electrode; an imaging lens facing the second electrode to form an image of a subject on an imaging plane; and an imaging element facing the first recess, the imaging element having a pixel block having a plurality of pixels.

Abstract: A liquid crystal optical device includes: a first electrode unit including a first substrate transparent to light, a light-transmitting layer formed on the first substrate, and a first electrode formed on the light-transmitting layer and being transparent to light, the light-transmitting layer including recesses formed on a surface facing the first electrode, arranged in a first direction, and extending in a second direction; a second electrode unit including a second substrate, the second substrate being transparent to light, and two second electrodes formed on the second substrate, the second electrodes being arranged in the second direction and extending along the first direction; a liquid crystal layer located between the first and second electrode units; a first polarizing plate located on an opposite side of the second electrode unit from the liquid crystal layer; and a drive unit that applies voltages to the first and second electrodes.

Abstract: A solid state imaging device according to an embodiment includes: an imaging element formed on a semiconductor substrate, and including pixel blocks each having pixels; a main lens forming an image of a subject on an imaging plane; a microlens array including microlenses corresponding to the pixel blocks, the microlens array reducing an image to be formed on the imaging plane by Nf times or less and forming reduced images on the pixel blocks corresponding to the respective microlenses; and an image processing unit enlarging and synthesizing the reduced images formed by the microlenses, the solid state imaging device meeting conditions of an expression MTFMain(u)?MTFML(u)?MTFMain(u×Nf) where u denotes an image spatial frequency, MTFML(u) denotes an MTF function of the microlenses, and MTFMain(u) denotes an MTF function of the main lens.

Abstract: An infrared imaging device, including: connection wiring portions arranged in matrix form on a substrate which is mounted in a package; first and second infrared detecting portions configured to convert intensity of absorbed infrared radiation into respective first and second signals, the second infrared detecting portion being smaller in thermal conductance than the first infrared detecting portion; and a lid member attached to the package so as to define an air-tight gap with the substrate, the connection wiring portions, the first and second infrared detecting portions being accommodated within the gap; wherein a degree-of-vacuum is measured within the gap and a warning issued based on the measured degree-of-vacuum.

Abstract: A solid-state imaging device according to an embodiment includes: an imaging element including an imaging area formed with a plurality of pixel blocks each including pixels; a first optical system forming an image of an object on an imaging surface; and a second optical system re-forming the image, which has been formed on the imaging surface, on the pixel blocks corresponding to microlenses, the second optical system including a microlens array formed with the microlenses provided in accordance with the pixel blocks. The microlenses are arranged in such a manner that an angle ? between a straight line connecting center points of adjacent microlenses and one of a row direction and a column direction in which the pixels are aligned is expressed as follows: ?>sin?1(2 dp/Dml), where Dml represents microlens pitch, and dp represents pixel pitch.

Abstract: An apparatus includes: a current control unit to control an amount of constant current and supply a first and second constant currents to an infrared detection pixel; a constant current supply time control unit to control periods of time in which the first and second constant currents are supplied to the infrared detection pixel; an A-D converter to convert a first and second electrical signals from the infrared detection pixel into a first and second digital signals, the first and second electrical signals being generated when the first and second constant currents is supplied to the infrared detection pixel, respectively; a subtracting unit to calculate a difference between the first and second digital signals; and a determining unit to determine whether the infrared detection pixel is a defective pixel based on the absolute value of the difference calculated by the subtracting unit.

Abstract: An uncooled infrared imaging element includes a pixel region, a device region, and a support substrate. The pixel region includes heat-sensitive pixels. The heat-sensitive pixels are arranged in a matrix and change current-voltage characteristics thereof in accordance with receiving amounts of infrared. The device region includes at least one of a drive circuit and a readout circuit which includes a MOS transistor. The drive circuit drives the heat-sensitive pixels. The readout circuit detects signals of the heat-sensitive pixels. The support substrate is provided with a cavity region to be under pixel region and the MOS transistor.

Abstract: A solid-state image pickup device has a photoelectric conversion element that converts light incident from a first surface of a substrate into a signal charge and accumulates the signal charge, a transistor that is formed on a second surface side opposite to the first surface of the substrate and reads out the signal charge accumulated by the photoelectric conversion element, a supporting substrate stuck to the second surface of the substrate, and an antireflection coating formed on the first surface of the substrate, wherein the first surface of the substrate includes a curved surface or an inclined surface forming a prescribed angle to the second surface.

Abstract: According to one embodiment, a solid state imaging device includes an infrared detection pixel configured to change an output potential by receiving infrared light, a non-sensitive pixel, a row select line, and a differential amplifier. An amount of change in an output potential when the non-sensitive pixel receives infrared light is smaller than an amount of change in an output potential when the infrared detection pixel receives the infrared light. The row select line is configured to apply a drive potential to both the infrared detection pixel and the non-sensitive pixel. The differential amplifier includes one input terminal to which an output potential of the infrared detection pixel is inputted and another input terminal to which an output potential of the non-sensitive pixel is inputted.

Abstract: An uncooled infrared imaging device according to an embodiment includes: reference pixels formed on a semiconductor substrate and arranged in at least one row; and infrared detection pixels arranged in the remaining rows and detecting incident infrared rays. Each of the reference pixels includes a first cell located above a first concave portion. The first cell includes a first thermoelectric conversion unit having a first infrared absorption film; and a first thermoelectric conversion element. Each of the infrared detection pixels includes a second cell located above a second concave portion, and having a larger area than the first cell. The second cell includes: a second thermoelectric converting unit located above the second concave portion; and first and second supporting structure units supporting the second thermoelectric converting unit above the second concave portion. The second thermoelectric converting unit includes: a second infrared absorption film; and a second thermoelectric conversion element.

Abstract: A solid-state imaging device according to an embodiment includes: an imaging element including a plurality of pixel blocks each containing a plurality of pixels; a first optical system forming an image of an object on an imaging plane; and a second optical system including a microlens array, the microlens array including a light transmissive substrate, a plurality of first microlenses formed on the light transmissive substrate, and a plurality of second microlenses formed around the first microlenses, a focal length of the first microlenses being substantially equal to a focal length of the second microlenses, an area of the first microlenses in contact with the light transmissive substrate being larger than an area of the second microlenses in contact with the light transmissive substrate, the second optical system being configured to reduce and reconstruct the image formed on the imaging plane on the pixel blocks via the microlens array.

Abstract: A solid-state imaging device according to an embodiment includes: an imaging element including a semiconductor substrate and a plurality of pixel blocks, each of the pixel blocks including at least two of R pixels, G pixels, B pixels, and W pixels; a first optical system configured to form an image of an object on an imaging plane; and a second optical system including a microlens array having a plurality of microlenses provided for the respective pixels blocks, the second optical system being located between the imaging element and the first optical system, the second optical system being configured to reduce and re-image the image formed on the imaging plane onto each of the pixel blocks. A proportion of the W pixels to be provided increases in a direction from a center of each pixel block toward an outer periphery thereof.

Abstract: An infrared solid state imaging device includes an infrared detection element unit having heat sensitive pixels, an AD conversion unit which conducts analog-to-digital conversion on an infrared image signal obtained by the infrared detection element unit, and a digital signal processing unit which converts the image signal converted to a digital signal. The digital signal processing unit stores an image value produced from the digital signal, and acquired in a frame immediately preceding a current frame, subtracts an image value obtained by multiplying the image value acquired in the frame immediately preceding the current frame by a predetermined constant ? in a range of 0 to 1, from an image value acquired in the current frame, and conducts processing of multiplying a resultant image value obtained by the subtraction by 1/(1??) so that an infrared image with less afterimage is provided.

Abstract: An infrared imaging element according to an embodiment includes: a semiconductor substrate including a stacked structure of a silicon first substrate, and a first insulation film, first cavities being provided on a surface of the first substrate; an infrared detection unit provided in the semiconductor substrate and including, detection cells provided respectively over the first cavities, each of the detection cells having diodes and a second insulation film, the first insulation film converting incident infrared rays to heat, the diodes converting the heat obtained by the first insulation film to an electric signal, a third insulation film having a top face located at a greater distance from the semiconductor substrate as compared with a top face of the second insulation film; and a second substrate provided over the third insulation film. A second cavity is formed between the second substrate and the infrared detection unit.