Abstract: An image pickup device has a signal processing part configured to perform signal process for the first to third color signals. The signal processing part includes a first color generator configured to generate a fourth color signal corresponding to a reference pixel based on a ratio between a second color signal at a pixel located in vicinity of the reference pixel and a first color signal at a pixel located in vicinity of the reference pixel, a second color generator configured to generate a fifth color signal corresponding to the reference pixel based on a ratio between a third color signal at a pixel located in vicinity of the reference pixel and the first color signal at a pixel located in vicinity of the reference pixel, and a image quality converter configured to generate color signals by performing a predetermined image process based on the first to fifth color signals.

Abstract: The present invention enables to provide a simple and inexpensive electromagnetic wave sensor that selectively detects sub-millimeter waves and millimeter waves in a specific frequency band, an imaging element and an imaging device. The distance of the gap between a plurality of antenna elements is smaller than the wavelength of infrared light. A capacitor electrically formed by the gap between the plurality of antenna elements, and an electrical resistor portion form parallel circuits electrically coupled to the antenna portion. The plurality of antenna elements are formed so that the impedance of the antenna portion is matched with the impedance of the parallel circuits against electromagnetic waves having a predetermined frequency, and is not matched against the higher harmonics of electromagnetic waves having the predetermined frequency.

Abstract: A two-dimensional digital data acquisition element includes: a pixel area having a plurality of pixels arranged in a matrix form, each of the pixels having a photoelectric conversion element to convert the reproduced light from the optical information recording medium to an electric signal; selection circuits which select the pixel; a readout circuit which reads out an electric signal of a pixel selected by the selection circuits; and a 1-bit AD converter which converts an output of the readout circuit to 1-bit digital data. A pitch ratio N between a pitch P1 of the unit data areas in the two-dimensional digital image information and a pitch P2 of the pixels in the pixel area defined as N=P1/P2 satisfies a relation A·n2/(An+1)<N<A·n2/(An?1) where A is the number of digital data in one-dimensional direction of one byte of the two-dimensional digital data and n is a natural number of at least 2.

Abstract: This disclosure concerns a solid-state imaging device including a pixel thermally separated from a substrate; a heat conduction switch having one end connected to the substrate and other end capable of contacting to the substrate or the pixel, the heat conduction switch changing over a state of the pixel to one of a first state and a second state, the first state being a state in which the pixel is thermally isolated from the substrate by causing the other end of the heat conduction switch to contact with the substrate, the second state being a state in which the pixel is thermally shorted to the substrate by causing the other end of the heat conduction switch to contact with the pixel; and a signal detector detecting a difference between the signal voltage of the pixel in the first state and the signal voltage of the pixel in the second state.

Abstract: In a pixel unit, cells are arranged in rows and columns two-dimensionally. Each of the cells accumulates signal charge obtained by photoelectrically converting light incident on photoelectric conversion section and outputs a voltage corresponding to the accumulated signal charge. On the cells, W, R, G, and B color filters are provided. Analog signals output from the W pixel, R pixel, G pixel, and B pixel are converted into digital signals by an analog/digital converter circuit, which outputs a W signal, an R signal, a G signal, and a B signal separately. A W signal saturated signal quantity is controlled by a saturated signal quantity control circuit. Then, a signal generator circuit corrects the R signal, the G signal, and the B signal using the W signal, the R signal, the G signal, and B signal output from the analog/digital converter circuit and outputs the corrected R, G, and B signals.

Abstract: In a pixel unit, W, R, G, and B pixels are arranged in rows and columns. The pixel unit output W, R, G, and B signals obtained by photoelectrically converting light incident on the W, R, G, and B pixels. An edge detection unit determines a specific area having a W pixel provided with a white filter as a central pixel in the pixel unit, divides the specific area into blocks including the central pixel, and detects edge information as to whether there is an edge of an image in each of the blocks. A block select unit selects a block with no edge from the edge information. A ratio calculating unit calculates the ratio coefficients of the R, G, and B signals from the selected block. An RGB signal generator generates new R, G, and B signals from the W signal of the central pixel using the ratio coefficients.

Abstract: There is provided a single-chip color solid-state imager of a backside illumination type having high sensitivity and low noise that facilitates the miniaturization of a pixel size. A pixel readout circuit is selectively disposed on a part of pixels of a readout block consisting of a plurality of pixels that share the pixel readout circuit.

Abstract: This disclosure concerns a solid-state imaging device comprising plurality of first pixels each including a colorless filter to convert the visible light into a first electric signal; plurality of second pixels each including a first filter having a peak of a spectral transmission at a first wavelength of the visible light to convert the visible light at the first wavelength into a second electric signal; plurality of third pixels each including a second filter having a peak of a spectral transmission at a second wavelength other than the first wavelength of the visible light to convert the visible light at the second wavelength into a third electric signal; and an arithmetic part receiving the first to the third electric signals and calculating a fourth electric signal corresponding to a third wavelength other than the first wavelength and the second wavelength by using the first to the third electric signals.

Abstract: An infrared ray detection device has a detection cell which has a thermoelectric converting part and an infrared ray absorption layer formed via a space on a semiconductor substrate, a first wiring part formed on the semiconductor substrate, and a supporting part, the detection cell being formed via the space on the semiconductor substrate and supports the detection cell. The supporting part includes a plurality of supporting legs which have a second wiring part electrically connecting the first wiring part to the detection cell and an insulating part covering a surrounding are of the second wiring part, and at least one connection part made of an insulating material connecting the plurality of supporting legs to each other.

Abstract: The present invention provides a solid-state image sensing device that converts long-wavelength light represented by the terahertz band into electric signals without being affected by the fluctuation of radiated heat, and outputs the signals mainly as picture signals; a method for manufacturing the same, and an imaging system. The cell unit has an antenna to generate electrical signals by receiving incident electric waves, an electrical resistor electrically connected to the antenna, and to vary the temperature of the cell unit by generating Joule heat corresponding to the electrical signals, and a thermoelectric conversion element electrically connected to the support structure portion, electrically insulated from the antenna and the electrical resistor, and thermally connected to the electrical resistor, to generate electrical signals by detecting the temperature variation of the cell unit; and the side of the incident electric waves in the cell unit is formed of a material to reflect infrared lights.

Abstract: An infrared ray detection device has a detection cell which has a thermoelectric converting part and an infrared ray absorption layer formed via a space on a semiconductor substrate, a first wiring part formed on the semiconductor substrate, and a supporting part, the detection cell being formed via the space on the semiconductor substrate and supports the detection cell. The supporting part includes a plurality of supporting legs which have a second wiring part electrically connecting the first wiring part to the detection cell and an insulating part covering a surrounding are of the second wiring part, and at least one connection part made of an insulating material connecting the plurality of supporting legs to each other.

Abstract: The terminal device of the present invention comprises a transmitting means for transmitting, to a contact-less IC medium, commands and carrier signals used for receiving responses, a receiving means for receiving responses from the contact-less IC medium, and a controlling means for controlling at least one of the transmitting means and the receiving means so as to adjust a maximum distance at which the terminal device can communicate with the contact-less IC medium. The terminal device firstly transmits an inquiry request command from the transmitting means to the contact-less IC medium, and receives an inquiry request response to the transmitted inquiry request command at the receiving means from the contact-less IC medium. Then, the terminal device transmits a data processing command from the transmitting means to the contact-less IC medium, and receives a data processing response to the transmitted data processing command at the receiving means from the contact-less IC medium.

Abstract: As a portable memory card carried by a patient to store the patient's personal medical information, a hybrid-type memory card is used which includes an optical information recording area, an integrated circuit memory area and a magnetic information recording area. A read/write drive for the memory card includes an optical head, a carrier mechanism for loading the memory card on a carrier table and moving the loaded memory card relative to the optical head, and a coupler section for coupling electronic information to be read and written from and to the integrated circuit memory area of the memory card, so that reading and writing of optical information from and to the optical information recording area can be conducted simultaneously with reading and writing of the electronic information from and to the integrated circuit memory area.