Abstract: Provided is a flux that is able to suppress any solder bridges even when it is applied to the narrow pitched electrodes such that the bridge occurs when using the past flux. The flux is characterized by containing 15% by mass or more and 35% by mass or less of polyoxyalkylene ethylenediamine, 2% by mass or more and 15% by mass or less of an organic acid, 10% by mass or more and 30% by mass or less of a base material, 3% by mass or more and 30% by mass or less of an amine and 20% by mass or more and 40% by mass or less of a solvent.

Abstract: Provided is a flux that can delay cured time of a resin within room temperature range and suppress the glass transition point of the resin from being reduced. The flux contains at least one species of ?-amino acid and ?-amino acid and a thermosetting resin wherein 1 part by weight or more and 30 parts by weight or less of ?-amino acid or ?-amino acid, or ?-amino acid and ?-amino acid are added for 100 parts by weight of the thermosetting agent.

Abstract: Provided is a flux that allows soldering to be performed without requiring a step of removing a Cu-OSP film even with a Cu-OSP processed substrate. This flux containing rosin, an organic acid, a benzimidazole-based compound, and a solvent is characterized in that 30% by mass or more and 70% by mass or less of the rosin, 1% by mass or more and 10% by mass or less of the organic acid, 0.2% by mass or more and 10% by mass or less of the benzimidazole-based compound, and 20% by mass or more and 60% by mass or less of the solvent, wherein the benzimidazole-based compound is composed of at least one of 2-alkylbenzimidazole and a salt of 2-alkylbenzimidazole hydrohalide.

Abstract: Provided is a solder material which enables a growth of an oxide film to be inhibited. A solder ball which is a solder material is composed of a solder layer and a covering layer covering the solder layer. The solder layer is spherical and is composed of a metal material containing an alloy including Sn content of 40% and more. Otherwise the solder layer is composed of a metal material including Sn content of 100%. In the covering layer, a SnO film is formed outside the solder layer, and a SnO2 film is formed outside the SnO film. A thickness of the covering layer is preferably more than 0 nm and equal to or less than 4.5 nm. Additionally, a yellow chromaticity of the solder ball is preferably equal to or less than 5.7.

Abstract: Produced is a metal ball which suppresses an emitted ? dose. Contained are the steps of melting a pure metal by heating the pure metal at a temperature which is higher than a boiling point of an impurity to be removed, higher than a melting point of the pure metal, and lower than a boiling point of the pure metal, the pure metal containing a U content of 5 ppb or less, a Th content of 5 ppb or less, purity of 99.9% or more and 99.995% or less, and a Pb or Bi content or a total content of Pb and Bi of 1 ppm or more, and the pure metal having the boiling point higher than the boiling point at atmospheric pressure of the impurity to be removed; and sphering the molten pure metal in a ball.

Abstract: A Cu core ball is provided that prevents any soft errors and decreases any connection failure. The Cu core ball includes a solder plating film formed on the surface of a Cu ball that is a Sn solder plating film or is made of a lead-free solder alloy, a principal ingredient of which is Sn. The solder plating film contains U of 5 ppb or less and Th of 5 ppb or less. The Cu ball has a purity of not less than 99.9% Cu and not more than 99.995% Cu. Pb and/or Bi contents therein are at a total of 1 ppm or more. The sphericity thereof is 0.95 or more. The obtained Cu core ball has an ? dose of 0.0200 cph/cm2 or less.

Abstract: Provided is a flux containing not less than 11.0 degrees and not more than 17.0 of a contact angle between the flux and a resist substrate on which the flux has been printed to have 1.0 mm of a diameter and 0.15 mm of a thickness when heating the resist substrate at 150 degrees C. for 30 seconds and cooling the resist substrate to a room temperature. The flux also contains more than zero seconds and not more than 2.0 seconds of a zero-cross time when heating a Cu plate at 150 degrees C. in a thermostat oven for 12 hours, applying the flux onto the baked Cu plate, and dipping the baked Cu plate onto which the flux is applied into a Sn-3.0Ag-0.5Cu alloy at a dipping speed of 15 mm/sec and by 2.0 mm of a dipped depth.

Abstract: Provided are a Cu ball, a Cu core ball, a solder joint, solder paste and foamed solder, which are superior in the impact resistance to dropping and can inhibit any occurrence of poor joints a junction defect. An electronic component 60 is constructed by joining a solder bump 30 of a semiconductor chip 10 to an electrode 41 of a printed circuit board 40 with solder paste 12, 42. The solder bump 30 is formed by joining an electrode 11 of the semiconductor chip 10 to the Cu ball 20. The Cu ball 20 according to the present invention contains purity which is equal to or higher than 99.9% and equal to or lower than 99.995%, sphericity which is equal to or higher than 0.95, and Vickers hardness which is equal to or higher than 20 HV and equal to or less than 60 HV.

Abstract: The present invention accurately distinguishes a soldering material less likely to oxidize. A Cu core ball has a Cu ball having a predetermined size, and a solder layer coating the Cu ball. The Cu ball provides a space between a semiconductor package and a printed circuit board. The Cu core ball has the soldering material having lightness greater than or equal to 62.5 in L*a*b* color space subsequent to a heating storage test performed for 72 hours in a temperature-controlled bath at 150° C. with a temperature of 25° C. and 40% humidity, and the soldering material, prior to the heating storage test, having lightness greater than or equal to 65 in the L*a*b* color space and yellowness less than or equal to 7.0 in the L*a*b* color space.

Abstract: Provided is a flux, flux residue of which keeps a predetermined viscosity during reflow and after a reflow step without hindering wettability of a solder alloy, the flux being compatible with an underfill in an underfill hardening step. The flux contains a thermosetting resin, a hardening agent, an organic acid and a solvent in which the flux contains 3% or more by mass to 8% or less by mass of the resin, 1% or more by mass to 5% or less by mass of the hardening agent to remain within a limit of an additive amount of the resin, 5% or more by mass to 15% or less by mass of the organic acid and a remainder of the solvent.

Abstract: Provided is a flux which is rosin-free and contains 50% by mass or more and 90% by mass or less of 2,4-diethyl-1,5-pentanediol, more than 0% by mass and less than 50% by mass of a solvent, 1% by mass or more and 15% by mass or less of an organic acid, wherein the total amount of the 2,4-diethyl-1,5-pentanediol and the solvent is 83% by mass or more and 99% by mass or less. This flux does not require washing with an organic detergent when transferred to solder balls is provided.

Abstract: A core material including a core and a solder plating layer of a (Sn—Bi)-based solder alloy made of Sn and Bi on a surface of the core. Bi in the solder plating layer is distributed in the solder plating layer at a concentration ratio in a predetermined range of, for example, 91.7% to 106.7%. Bi in the solder plating layer is homogeneous, and thus, a Bi concentration ratio is in a predetermined range over the entire solder plating layer including an inner circumference side and an outer circumference side in the solder plating layer.

Abstract: Provided herein is a solder material that includes a spherical core that provides space between a joint object and another object to be joined to the joint object and a solder coated layer that has a melting point at which a core layer of the core is not melted. The solder coated layer includes Sn as a main ingredient and 0 to 2 mass % of Ag, and coats the core. The solder coated layer has an average grain diameter of crystal grains of 3 ?m or less, and the solder material has a spherical diameter of 1 to 230 ?m and a sphericity of 0.95 or more.

Abstract: To provide a Ni ball having a low ? dose and high sphericity even when it contains impurity elements other than Ni in certain amounts. The Ni ball contains an element U, a content thereof being 5 ppb or less, and an element Th, a content thereof being 5 ppb or less, wherein a purity of the Ni ball is 99.9% or more but 99.995% or less, an ? dose thereof is 0.0200 cph/cm2 or less, a content of either Pb or Bi, or a total content of both Pb and Bi is 1 ppm or more, and a sphericity thereof is 0.90 or more, in order to prevent any software errors and reduce connection failure.

Abstract: Provided is a solder material having oxidation resistance at the time of melting solder or after melting it, as well as managing a thickness of oxide film at a fixed value or less before melting the solder. A Cu core ball 1A is provided with a Cu ball 2A for keeping a space between a semiconductor package and a printed circuit board and a solder layer 3A that covers the Cu ball 2A. The solder layer 3A is composed of Sn or a solder alloy whose main component is Sn. For the Cu core ball 1A, lightness is equal to or more than 65 in the L*a*b* color space and yellowness is equal to or less than 7.0 in the L*a*b* color space, and more preferably, the lightness is equal to or more than 70 and the yellowness thereof is equal to or less than 5.1.

Abstract: Provided are a Ni ball, a Ni core ball, a solder joint, solder paste and foamed solder which are superior in the impact resistance to dropping and can inhibit any occurrence of a poor joints. An electronic component 60 is constructed by joining a solder bump 30 of a semiconductor chip 10 to an electrode 41 of a printed circuit board 40 with solder paste 12, 42. The solder bump 30 is formed by joining an electrode 11 of the semiconductor chip 10 to the Ni ball 20. The Ni ball 20 according to the present invention contains purity which is equal to or higher than 99.9% and equal to or lower than 99.995%, sphericity which is equal to or higher than 0.90, and Vickers hardness which is equal to or higher than 20HV and equal to or less than 90HV.

Abstract: Provided are a Cu column, a Cu core column, a solder joint, and a through-silicon via, which have the low Vickers hardness and the small arithmetic mean roughness. For the Cu column 1 according to the present invention, its purity is equal to or higher than 99.9% and equal to or lower than 99.995%, its arithmetic mean roughness is equal to or less than 0.3 ?m, and its Vickers hardness is equal to or higher than 20 HV and equal to or less than 60 HV. Since the Cu column 1 is not melted at a melting temperature in the soldering and a definite stand-off height (a space between the substrates) can be maintained, it is preferably applied to the three dimensional mounting or the pitch narrowing mounting.

Abstract: Provided is a solder material which enables a growth of an oxide film to be inhibited. A solder ball which is a solder material is composed of a solder layer and a covering layer covering the solder layer. The solder layer is spherical and is composed of a metal material containing an alloy including Sn content of 40% and more. Otherwise the solder layer is composed of a metal material including Sn content of 100%. In the covering layer, a SnO film is formed outside the solder layer, and a SnO2 film is formed outside the SnO film. A thickness of the covering layer is preferably more than 0 nm and equal to or less than 4.5 nm. Additionally, a yellow chromaticity of the solder ball is preferably equal to or less than 5.7.

Abstract: Provided are a Cu ball, a Cu core ball, a solder joint, solder paste and foamed solder, which are superior in the impact resistance to dropping and can inhibit any occurrence of poor joints a junction defect. An electronic component 60 is constructed by joining a solder bump 30 of a semiconductor chip 10 to an electrode 41 of a printed circuit board 40 with solder paste 12, 42. The solder bump 30 is formed by joining an electrode 11 of the semiconductor chip 10 to the Cu ball 20. The Cu ball 20 according to the present invention contains purity which is equal to or higher than 99.9% and equal to or lower than 99.995%, sphericity which is equal to or higher than 0.95, and Vickers hardness which is equal to or higher than 20 HV and equal to or less than 60 HV.

Abstract: A Cu core ball and a method of manufacturing such a Cu core ball. Purity of the Cu internal ball is at least 99.9% and not greater than 99.995%. A total contained amount of Pb and/or Bi in impurity contained in the Cu ball is equal to or larger than 1 ppm. Its sphericity is at least 0.95. A solder plating film coated on the Cu ball is of Sn solder or a lead free solder alloy whose primary component is Sn. In the solder plating film, a contained amount of U is not more than 5 ppb and that of Th is not more than 5 ppb. A total alpha dose of the Cu ball and the solder plating film is not more than 0./0200 cph/cm2. An arithmetic average roughness of the Cu core ball is equal to or less than 0.3 ?m.