Abstract: Provided a semiconductor device including: a semiconductor layer; and an electrode disposed on the semiconductor layer directly or via another layer, the semiconductor layer including a first region containing, as a major component, a crystalline oxide semiconductor containing gallium, and a second region containing, as a major component, an oxide containing gallium, the second region and the first region each containing an impurity element, a maximum value of a concentration of the impurity element in the second region being located at a depth of 1.0 ?m or more from an upper surface of the semiconductor layer and being greater than a maximum value of a concentration of the impurity element in the first region.

Abstract: Provided a semiconductor device including: a semiconductor layer with an extended depletion layer; and an electrode disposed on the semiconductor layer directly or via another layer, the semiconductor layer including a first region containing, as a major component, a crystalline oxide semiconductor containing gallium, and a second region containing, as a major component, an oxide containing gallium, the second region including a linear crystal defect region in a cross section perpendicular to an upper surface of the semiconductor layer.

Abstract: The present invention provides a resin composition comprising a thermoplastic resin (A); and silica composite oxide particles (B), wherein the thermoplastic resin (A) is a methacrylic copolymer containing monomer units derived from alkyl methacrylate with an alkyl group having 1 to 4 carbon atoms at 85% by mass or more and less than 100% by mass and monomer units derived from another vinyl monomer copolymerizable with the monomer units derived from alkyl methacrylate with an alkyl group having 1 to 4 carbon atoms at more than 0% by mass and 15% by mass or less, wherein silica composite oxide present in the silica composite oxide particles (B) is a material in which a portion of the silicon elements in silica is replaced with another element, wherein the content of the silica composite oxide particles (B) in the resin composition is 0.

Abstract: The present invention provides a resin composition comprising a thermoplastic resin (A), and a flat plate having a thickness of 3 mm obtained by injection molding using only the resin composition as a raw material satisfies all Eqs. 1 to 3 below: (Eq. 1) x<8; (Eq. 2) y<12; and (Eq. 3) y<12x?0.75 [where x is an initial haze (%) of the flat plate measured according to JIS K 7136 before a steel wool abrasion test, y is an amount of change in the haze (%) of the flat plate with respect to the initial haze (%) measured according to JIS K 7136 after the steel wool abrasion test, and the steel wool abrasion test is a test in which #0000 steel wool is pressed against a surface of the flat plate at a pressure of 14 kPa and rubbed back-and-forth 11 times at a speed of 15 cm/sec in a direction perpendicular to the fiber direction of the steel wool].

Abstract: The present disclosure provides a laminated structure suitable for semiconductor elements. The laminated structure includes a first oxide layer having a trench structure on its surface and a second oxide layer laminated along the trench structure. A difference in thickness between centers of a bottom and a sidewall of the second oxide layer is less than 30%.

Abstract: The present disclosure provides a film formation method having an excellent mass productivity. In the film formation method, a metal complex is used, which shows an exothermic peak at 480°° C. to 520°° C. in a thermogravimetric-differential thermal analysis at a temperature increase rate of 20° C./min under an oxygen-containing atmosphere.

Abstract: The present disclosure provides a film formation method having an excellent mass productivity. The present disclosure provides a film formation method using one aqueous solution or different aqueous solutions containing at least one of a metal complex having two or more different ligands and a metal complex having same ligands and substituents as well as a gallium compound, in which the metal complex having the two or more different ligands has nitrogen atom, and the metal complex having the same ligands and substituents has a halogen atom.

Abstract: The present disclosure provides a film formation method having an excellent mass productivity. In the film formation method, at least one of a metal complex having two or more different ligands, and a metal complex having same ligands and substituents is used.

Abstract: Provided is a semiconductor element including at least, a semiconductor layer including a crystalline oxide semiconductor as a major component; an electrode layer laminated on the semiconductor layer; and a conductive substrate laminated on the electrode layer directly or with another layer in between, the conductive substrate containing at least a first metal selected from the metals in group 11 in the periodic table and a second metal different from the first metal in coefficient of liner thermal expansion.

Abstract: Provided is a crystalline oxide film including: a plane tilted from a c-plane as a principal plane; gallium; and a metal in Group 9 of the periodic table, the metal in Group 9 of the periodic table among all metallic elements in the film having an atomic ratio of equal to or less than 23%.

Abstract: A vehicle includes a regenerative generator on a front wheel. A braking control device includes an actuator that applies a front wheel torque and a rear wheel torque, and a controller that individually adjusts the front wheel torque and the rear wheel torque. The controller is configured to determine the front wheel torque and the rear wheel torque to zero when a regenerative braking force Fg generated by the regenerative generator has not reached a maximum regenerative force Fx which is a generatable maximum value. On the other hand, the controller is configured to increase the rear wheel torque from zero before increasing the front wheel torque from zero when the regenerative braking force Fg reaches the maximum regenerative force Fx.

Abstract: Provided is a semiconductor device including, a plurality of PN junction diodes each having a negative temperature characteristic and connected to each other in series; a Schottky barrier diode having a positive temperature characteristic and connected to the PN junction diodes in parallel; and a die pad on which at least one of the PN junction diodes and the Schottky barrier diode are mounted commonly.

Abstract: Provided is a semiconductor device including, a plurality of PN junction diodes each having a negative temperature characteristic and connected to each other in series; a plurality of resistance elements connected respectively to the PN junction diodes in parallel and connected to each other in series; and a Schottky barrier diode having a positive temperature characteristic and connected to the PN junction diodes in parallel.

Abstract: Provided is a powder inorganic oxide containing Al, Ce and Zr as constituent elements, that affords a molded product with a density of 1.0 to 1.3 g/ml by placing 4.0 g of the inorganic oxide in a cylindrical container having diameter 20 mm and performing uniaxial molding under conditions of room temperature and pressure of 29.4 MPa for 30 sec., and achieves an average shrinkage percentage of not more than 14.0% as calculated by the following formula: average shrinkage percentage (%)=100×{(1?(c)/(a))+(1?(d)/(b))}/2 wherein each symbol is as defined in the DESCRIPTION.

Abstract: Provided is alumina material comprising alumina and zirconium, wherein in a radial distribution function obtained by Fourier-transforming an extended X-ray absorption fine structure (EXAFS) spectrum of a K absorption edge of the zirconium in the alumina material, the value of IB/IA is 0.5 or less where IA is a maximum intensity among the intensities of peaks present at 0.1 nm to 0.2 nm, and IB is a maximum intensity among the intensities of peaks present at 0.28 nm to 0.35 nm.

Abstract: Provided is a semiconductor element including: a multilayer structure including: a conductive substrate; and an oxide semiconductor film arranged directly on the conductive substrate or over the conductive substrate via a different layer, the oxide semiconductor film including an oxide, as a major component, having a corundum structure, the conductive substrate having a larger area than the oxide semiconductor film.

Abstract: Provided is a semiconductor element including: a multilayer structure including: a conductive substrate; and an oxide semiconductor film arranged directly on the conductive substrate or over the conductive substrate via a different layer, the oxide semiconductor film including an oxide, as a major component, containing gallium, the conductive substrate having a larger area than the oxide semiconductor film.

Abstract: A resin molded article includes: a main body portion having a design face and an opposite face thereto, and having a first foamed layer formed inside the main body portion; a protruding portion that is provided at an edge portion of the main body portion, and that protrudes toward a side opposite from the design face in a thickness direction of the main body portion; and a concavity that is recessed from a surface of the opposite face toward a thickness direction side of the main body portion at a root portion of the protruding portion at the opposite face.

Abstract: A braking control device includes a master unit including a master chamber connected to a front wheel cylinder and a servo chamber that applies forward force opposing a reverse force applied to a master piston by the master chamber to the master piston, a pressure adjustment unit that adjusts brake fluid discharged by a pump to a first liquid pressure by a first solenoid valve and introduces the first liquid pressure to a rear wheel cylinder, and adjusts the first liquid pressure to decrease to a second liquid pressure by a second solenoid valve and introduces the second liquid pressure to the servo chamber; and a regenerative coordination unit having an input piston operable in conjunction with a braking operation member and an input cylinder fixed to the master cylinder, and in which a gap between the master piston and the input piston is controlled by the second liquid pressure.

Abstract: A brake control device including a pressure adjusting unit including an electric pump and an electromagnetic valve, and that adjusts, using the electromagnetic valve, a brake liquid discharged by the electric pump to an adjusted liquid pressure and introduces the adjusted liquid pressure to the wheel cylinders of the rear wheels; and a master unit that includes a master cylinder and a master piston, and that includes a master chamber connected to the wheel cylinders of the front wheels and a servo chamber to which the adjusted liquid pressure is introduced and which provides, to the master piston, an advancing force that opposes a retreating force applied to the master piston by the master chamber.