Patents by Inventor Hiroyuki Fujimoto

Hiroyuki Fujimoto has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7791133
    Abstract: A semiconductor device includes a vertically extending semiconductor portion above a semiconductor substrate, first and second diffusion regions being disposed near the bottom and top portions of the vertically extending semiconductor portion, respectively. A gate insulating film extends along the side surface of the vertically extending semiconductor portion which is separated by the gate insulating film from a gate electrode. The level of the top portion of the gate electrode is nearly equal to or lower than the level of the bottom portion of the second diffusion regions and the level of the bottom portion of the gate electrode is nearly equal to or higher than the level of the top portion of the first diffusion region.
    Type: Grant
    Filed: September 23, 2008
    Date of Patent: September 7, 2010
    Assignee: Elpida Memory, Inc.
    Inventor: Hiroyuki Fujimoto
  • Patent number: 7767343
    Abstract: A nonaqueous electrolyte secondary battery including a negative electrode containing a graphite material as the negative active material, a positive electrode containing lithium cobalt oxide as a main component of the positive active material and a nonaqueous electrolyte solution, the battery being characterized in that the lithium cobalt oxide contains a group IVA element and a group IIA element of the periodic table, the nonaqueous electrolyte solution contains 0.2-1.5% by weight of a sulfonyl-containing compound and preferably further contains 0.5-4% by weight of vinylene carbonate.
    Type: Grant
    Filed: February 18, 2005
    Date of Patent: August 3, 2010
    Assignees: Ube Industries Ltd., Sanyo Electric Co., Ltd.
    Inventors: Koji Abe, Kazuhiro Miyoshi, Yasufumi Takahashi, Hiroyuki Fujimoto, Akira Kinoshita, Shingo Tode, Ikuro Nakane, Shin Fujitani
  • Publication number: 20100178563
    Abstract: Disclosed is a composite negative electrode active material including a graphitizable carbon material containing a layered structure formed of stacked carbon layers partially having a three-dimensional regularity, and a low crystalline carbon material. A negative electrode including the composite negative electrode active material is used to produce a non-aqueous electrolyte secondary battery. The non-aqueous electrolyte secondary battery thus produced has a high energy density and demonstrates a high output/input performance for a long period of time in various environments of high to low temperatures.
    Type: Application
    Filed: June 2, 2008
    Publication date: July 15, 2010
    Applicants: PANASONIC CORPORATION, OSAKA GAS CO., LTD.
    Inventors: Yoshiyuki Ozaki, Hiroyuki Fujimoto
  • Publication number: 20100148233
    Abstract: A semiconductor device include a semiconductor substrate comprising a substrate body, a base over the substrate body and a pillar over a first region of the base; a buried line adjacent to a side surface of the base; a first diffusion layer over a second region of the base; a second diffusion layer over the pillar, the second diffusion layer being higher in level than the first diffusion layer; and a third diffusion layer disposed between the buried line and the semiconductor substrate. The third diffusion layer is different in level from the first diffusion layer. The top level of the third diffusion layer is lower than the top level of the first diffusion layer.
    Type: Application
    Filed: December 14, 2009
    Publication date: June 17, 2010
    Applicant: ELPIDA MEMORY, INC.
    Inventor: Hiroyuki FUJIMOTO
  • Publication number: 20100140688
    Abstract: A semiconductor device includes a first semiconductor pillar, a first insulating film covering a side face of the first semiconductor pillar, a first electrode covering the first insulating film, a second semiconductor pillar, a second insulating film covering a side face of the second semiconductor pillar, and a second electrode covering the second insulating film. The top level of the second electrode is higher than the top level of the first electrode.
    Type: Application
    Filed: December 3, 2009
    Publication date: June 10, 2010
    Applicant: ELPIDA MEMORY, INC.
    Inventor: Hiroyuki FUJIMOTO
  • Publication number: 20100133497
    Abstract: The invention includes: multiple bit lines b1 to b5 arranged in parallel to each other at a first line pitch; multiple word lines w1 to w4 arranged in parallel to each other at a second line pitch greater than the first line pitch and intersecting with bit lines b1 to b5; and multiple capacitors. Respective center positions 4 of the multiple capacitors lie above the bit lines and are displaced by given distance C from the intersection of the bit line and the word line in a direction of arranging the word lines.
    Type: Application
    Filed: December 1, 2009
    Publication date: June 3, 2010
    Applicant: ELPIDA MEMORY, INC.
    Inventor: Hiroyuki Fujimoto
  • Publication number: 20100123170
    Abstract: A semiconductor device includes a transistor, a conductive pad, and a contact. The conductive pad is electrically connected to the transistor. The conductive pad may include, but is not limited to, a first region and a second region. The contact is electrically connected to the conductive pad. At least a main part of the first region overlaps the transistor in plan view. At least a main part of the second region does not overlap the transistor in plan view. At least a main part of the contact overlaps the second region in plan view. The at least main part of the contact does not overlap the first region in plan view. The at least main part of the contact does not overlap the transistor in plan view.
    Type: Application
    Filed: November 18, 2009
    Publication date: May 20, 2010
    Inventor: Hiroyuki FUJIMOTO
  • Publication number: 20100112450
    Abstract: A nonaqueous electrolyte secondary battery includes a positive electrode containing a positive active material, a negative electrode containing a negative active material and a nonaqueous electrolyte. Characteristically, the positive active material comprises a mixture of a lithium transition metal complex oxide A obtained by incorporating at least Zr and Mg into LiCoO2 and a lithium transition metal complex oxide B having a layered structure and containing at least Ni and Mn as the transition metal.
    Type: Application
    Filed: October 9, 2009
    Publication date: May 6, 2010
    Inventors: Yasufumi Takahashi, Akira Kinoshita, Shingo Tode, Kazuhiro Hasegawa, Hiroyuki Fujimoto, Ikuro Nakane, Shin Fujitani
  • Patent number: 7696569
    Abstract: A semiconductor device includes a trench provided in a semiconductor substrate, a gate electrode formed in the trench through a gate dielectric film, and a diffusion layer formed in the vicinity of the trench. The trench includes an opening portion provided in a surface of the semiconductor substrate, a recess curved surface portion including a cross-sectional contour having a substantially circular arc shape, and a connection curved surface portion connecting the recess curved surface portion and the opening portion. The connection curved surface portion includes a continuous curved surface between the opening portion and the recess curved surface portion.
    Type: Grant
    Filed: September 19, 2007
    Date of Patent: April 13, 2010
    Assignee: Elpida Memory, Inc.
    Inventors: Hiroyuki Fujimoto, Yasuhiko Ueda
  • Publication number: 20100086848
    Abstract: In a nonaqueous electrolyte secondary battery and an active material for a nonaqueous electrolyte secondary battery, the nonaqueous electrolyte secondary battery includes: a positive electrode containing a positive-electrode active material; a negative electrode containing a negative-electrode active material; and a nonaqueous electrolyte, wherein molybdenum dioxide whose particles have an average aspect ratio of two or less is used as the positive-electrode active material or the negative-electrode active material where the aspect ratio is the ratio between the major axis length and the minor axis length of a particle-equivalent ellipse equivalent to the cross-sectional area or the two-dimensional projection image of each of the observed particles (major axis length/minor axis length), the particle-equivalent ellipse being an ellipse having the same area and the same first and second moments as the observed particle.
    Type: Application
    Filed: October 1, 2009
    Publication date: April 8, 2010
    Applicants: SANYO ELECTRIC CO., LTD., JAPAN NEW METALS CO., LTD.
    Inventors: Masanobu Takeuchi, Atsushi Ogata, Hiroyuki Fujimoto, Osamu Shindo, Hideaki Shimizu, Susumu Morita
  • Patent number: 7690357
    Abstract: A fuel injection valve is provided with a main body and a valve member. The main body has a fuel passage and a fuel injection opening formed at the downstream-end of the fuel passage. The valve member is provided in the fuel passage. The valve member is configured to move between a first position in which the valve member closes the fuel injection opening and a second position in which the valve member opens the fuel injection opening. A hardened layer is formed on abutment surfaces of the valve member and the main body that abut with each other. The hardness of this hardened layer is lower in its surface side than in its bottom side. According to this structure, the stress generated inside the hardened layer is suppressed, and breakage and detachment of the hardened layer are prevented.
    Type: Grant
    Filed: June 30, 2008
    Date of Patent: April 6, 2010
    Assignee: Aisan Kogyo Kabushiki Kaisha
    Inventors: Hiroyuki Fujimoto, Hiroshi Kawazoe
  • Patent number: 7682748
    Abstract: In a nonaqueous electrolyte secondary battery having a positive electrode containing a positive electrode active material, a negative electrode containing a negative electrode active material, and a nonaqueous electrolyte, as the positive electrode active material or as the negative electrode active material, a mixture containing molybdenum dioxide and lithium titanate in a weight ratio (molybdenum dioxide:lithium titanate) of 90:10 to 50:50 is used.
    Type: Grant
    Filed: January 22, 2007
    Date of Patent: March 23, 2010
    Assignee: Sanyo Electric Co., Ltd.
    Inventors: Masanobu Takeuchi, Hiroyuki Fujimoto, Seiji Yoshimura, Shin Fujitani
  • Patent number: 7677343
    Abstract: A four-wheeled utility vehicle including an engine unit mounted in the utility vehicle; and a vehicle body frame including a frame member that is disposed in the vicinity of the engine unit and is partially movable relative to the engine unit.
    Type: Grant
    Filed: April 9, 2007
    Date of Patent: March 16, 2010
    Assignee: Kawasaki Jukogyo Kabushiki Kaisha
    Inventors: Haruo Kitai, Toru Minami, Hiroyuki Fujimoto
  • Patent number: 7644789
    Abstract: A mechanism of a four-wheel drive vehicle for enabling an engine and a transmission to be arranged compactly by using an empty space within a body frame of the vehicle. The transmission includes a power take-off part for driving the front wheels of the vehicle, and a rear reduction gear mechanism for driving the rear wheels of the vehicle. The transmission and the engine are mounted on a swing arm which is supported on the body frame of the vehicle so as to be able to swing in an up and down direction.
    Type: Grant
    Filed: March 25, 2008
    Date of Patent: January 12, 2010
    Assignee: Kawasaki Jukogyo Kabushiki Kaisha
    Inventors: Takeshi Miyazaki, Hiroyuki Fujimoto, Izumi Takagi
  • Publication number: 20090325077
    Abstract: In a nonaqueous electrolyte secondary battery having a positive electrode containing a positive electrode active material, a negative electrode containing a negative electrode active material, and a nonaqueous electrolyte, as the positive electrode active material or as the negative electrode active material, a mixture containing molybdenum dioxide and lithium titanate in a weight ratio (molybdenum dioxide:lithium titanate) of 90:10 to 50:50 is used.
    Type: Application
    Filed: September 3, 2009
    Publication date: December 31, 2009
    Inventors: Masanobu Takeuchi, Hiroyuki Fujimoto, Seiji Yoshimura, Shin Fujitani
  • Publication number: 20090305136
    Abstract: A non-aqueous electrolyte secondary battery has a positive electrode (11) containing a positive electrode active material, a negative electrode (12) containing a negative electrode active material, and a non-aqueous electrolyte solution (14) in which a solute is dissolved in a non-aqueous solvent. The positive electrode active material is obtained by sintering a titanium-containing oxide on a surface of a layered lithium-containing transition metal oxide represented by the general formula Li1+xNiaMnbCocO2+d, where x, a, b, c, and d satisfy the conditions x+a+b+c=1, 0.7?a+b, 0?x?0.1, 0?c/(a+b)<0.35, 0.7?a/b?2.0, and ?0.1?d?0.1.
    Type: Application
    Filed: February 23, 2009
    Publication date: December 10, 2009
    Inventors: Chihiro Yada, Fumiharu Niina, Hiroshi Nakagawa, Hiroyuki Fujimoto
  • Publication number: 20090291355
    Abstract: The present invention provides a non-aqueous electrolyte battery, etc. that can reduce the manufacturing cost of the battery, meet the need for increased battery capacity, and at the same time improve various battery characteristics, such as high-rate charge-discharge capability, high-temperature cycle performance, and storage performance. A porous layer (32) is disposed between a separator and a negative electrode (13). The porous layer has a non-aqueous electrolyte permeability higher than that in TD of the separator. An excess electrolyte is contained in at least a portion of an internal space of a battery case that is other than an electrode assembly, and the excess electrolyte and at least a portion of the porous layer are in contact with each other.
    Type: Application
    Filed: September 19, 2006
    Publication date: November 26, 2009
    Applicant: SANYO ELECTRIC CO., LTD.
    Inventors: Yasunori Baba, Naoki Imachi, Yuko Sibutani, Akira Mikami, Hiroyuki Fujimoto, Shigeki Matsuta, Shin Fujitani
  • Patent number: 7622223
    Abstract: A nonaqueous electrolyte secondary battery includes a positive electrode containing a positive active material, a negative electrode containing a negative active material and a nonaqueous electrolyte. Characteristically, the positive active material comprises a mixture of a lithium transition metal complex oxide A obtained by incorporating at least Zr and Mg into LiCoO2 and a lithium transition metal complex oxide B having a layered structure and containing at least Ni and Mn as the transition metal.
    Type: Grant
    Filed: March 4, 2005
    Date of Patent: November 24, 2009
    Assignee: Sanyo Electric Co., Ltd.
    Inventors: Yasufumi Takahashi, Akira Kinoshita, Shingo Tode, Kazuhiro Hasegawa, Hiroyuki Fujimoto, Ikuro Nakane, Shin Fujitani
  • Patent number: 7608363
    Abstract: A non-aqueous electrolyte secondary battery including a positive electrode containing a positive active material, a negative electrode containing a negative active material and a non-aqueous electrolyte, characterized in that lithium transition metal complex oxide A formed by allowing LiCoO2 to contain at least both of Zr and Mg and lithium transition metal complex oxide B having a layered structure and containing at least both of Mn and Ni as transition metals are mixed and used as said positive active material, and vinylene carbonate and divinyl sulfone are contained in said non-aqueous electrolyte.
    Type: Grant
    Filed: May 31, 2005
    Date of Patent: October 27, 2009
    Assignee: Sanyo Electric Co., Ltd.
    Inventors: Akira Kinoshita, Hiroyuki Fujimoto, Yasufumi Takahashi, Shingo Tode, Kazuhiro Hasegawa, Shin Fujitani
  • Publication number: 20090261408
    Abstract: A semiconductor device includes a semiconductor substrate, a first diffusion region, a gate insulating film, a gate electrode, a second diffusion region and a contact plug. The semiconductor substrate includes a base and at least a pillar. The first diffusion region is disposed in the base. The gate insulating film covers a side surface of the pillar. The gate electrode is separated from the pillar by the gate insulating film. The second diffusion region is disposed in an upper portion of the pillar. The contact plug is connected to the second diffusion region. The contact plug is connected to the entirety of the top surface of the pillar.
    Type: Application
    Filed: April 20, 2009
    Publication date: October 22, 2009
    Applicant: ELPIDA MEMORY, INC
    Inventor: Hiroyuki FUJIMOTO