Abstract: A non-aqueous electrolyte secondary battery includes: a positive electrode containing a positive electrode active material, a negative electrode containing a negative electrode active material; and a non-aqueous electrolyte having lithium ion conductivity. The positive electrode includes a lithium-containing transition metal oxide having a layered structure and being represented by the general formula Li1+x(NiaMnbCoc)O2+?, where x+a+b+c=1, 0.7?a+b, 0?x?0.1, 0?c/(a+b)<0.35, 0.7?a/b?2.0, and ?0.1???0.1. The non-aqueous electrolyte contains a lithium salt having an oxalato complex as an anion.

Abstract: A method of manufacturing a semiconductor device includes the following processes. Multiple bit lines including a first silicide layer and/or a first polysilicon layer are formed. Then, multiple through holes are formed in the bit lines. Then, a first silicon layer is formed to fill the through holes. Then, a second silicon layer including a base and multiple bodies standing on the base is formed over the bit lines and the first silicon layer. Then, a gate insulating film and a gate electrode are formed to cover the bodies. Then, multiple first source-and-drain regions are formed under the respective bodies in the base. Then, multiple word lines connected to the gate electrode and including a second silicide layer and/or a second polysilicon layer are formed. Then, multiple second source-and-drain regions penetrating the word lines and connected to the respective bodies are formed.

Abstract: A semiconductor device includes: a monocrystalline substrate; an inter-layer film formed on the monocrystalline substrate; a contact hole penetrating the inter-layer film and partially exposing an upper surface of the monocrystalline substrate; a sidewall formed on an inner surface of the contact hole; a plurality of first monocrystalline layers which include few defects, fill the contact hole, and cover the inter-layer film; and a plurality of second monocrystalline layers which include many defects and cover the sidewall and an upper surface of the inter-layer film so as to be sandwiched between the first monocrystalline layers and the inter-layer film.

Abstract: Method of increasing charge-discharge capacity of a nonaqueous electrolyte secondary battery including a positive electrode containing a positive active material, a negative electrode containing a negative active material other than metallic lithium and a nonaqueous electrolyte. The battery is charged at an end-of-charge voltage of at least 4.3V. The positive active material includes lithium cobaltate in which Zr and Mg are contained by mixing their source materials in the preparation of the positive active material by a heat treatment, the Zr and Mg being contained in the lithium cobaltate in a total amount of not greater than 3 mole %, the Zr after heat treatment being present as particles of a Zr-containing compound that are sintered with particle surfaces of the lithium cobaltate, and the Zr being detected in the particles of the Zr-containing compound but not in the lithium cobaltate particles.

Abstract: A semiconductor device may include, but is not limited to, first and second well regions, and a well isolation region isolating the first and second well regions. The first and second well regions each may include an active region, a device isolation groove that defines the active region, and a device isolation insulating film that fills the device isolation groove. The first and second well regions may include first and second well layers, respectively. The well isolation region may include a well isolation groove, a well isolation insulating film that fills the well isolation groove, and a diffusion stopper layer disposed under a bottom of the well isolation groove. The first and second well layers have first and second bottoms respectively, which are deeper in depth than a bottom of the device isolation groove and shallower in depth than the bottom of the well isolation groove.

Abstract: The semiconductor device comprises a word line and a bit line. The word line comprises a gate electrode and a first metal interconnect. The first metal interconnect has contact with the gate electrode and extends into a region upper than a first impurity-diffused region in a first direction. The bit line comprises a connecting part and a second metal interconnect. The connecting part is formed so as to have contact with at least part of the side surface of the first impurity-diffused region. The second metal interconnect has contact with the connecting part and extends into a region lower than the semiconductor region in a second direction orthogonal to the first direction.

Abstract: A method of manufacturing a semiconductor device in which the formation of buried wiring is facilitated includes: forming columnar patterns, which are arranged in a two-dimensional array, and bridge patterns, which connect the columnar patterns in a column direction, on a main surface of a silicon substrate; injecting an impurity in a surface portion of each of the columnar patterns and bridge patterns and in surface portions of the silicon substrate, thereby forming impurity injection layers; forming a side wall on sides of the columnar patterns and bridge patterns; removing the impurity injection layer, which has been formed in the silicon substrate, with the exception of the impurity injection layer covered by the bottom portions of the side walls; removing the side walls by etch-back; and thermally oxidizing the surface portion of the bridge patterns and then etching away the same. Buried wiring extending in the column direction of the columnar patterns is formed within the silicon substrate.

Abstract: A semiconductor device comprises a first contact plug, a first structure and a second insulating layer, or comprises a first contact plug, a first structure, a protruding region and a second insulating layer. The first contact plug extends in a predetermined direction and including a step converting a cross section area of the first contact plug perpendicular to the predetermined direction discontinuously via the step in one end side. The second insulating layer is formed on side surface of a part of the first contact plug closer to the first structure than the step, or on side surfaces of the protruding region and a part of the first contact plug closer to the first structure than the step.

Abstract: A shift-lever device of a vehicle is provided. The device includes a single shift lever provided so as to be pivotable, and a gate plate having a gate through which the shift lever is inserted up to a predetermined length to guide a shift operation thereof. The device is configured to be coupled with a single shift shaft of a gear transmission mechanism through a single push-pull cable so as to operate the shift shaft. The transmission is configured so that the shift shaft interlocks with a single shift fork to shift gears of the transmission. The gate has a shape such that the shift lever is movable more greatly at each of shift positions as much as a clearance between an outer casing and inner cable of the cable.

Abstract: A sacrifice oxide film is formed in a Fin semiconductor substrate portion, and impurities are then implanted in the semiconductor substrate through a mask pattern as a mask. Thereafter, the sacrifice oxide film is removed to expose the semiconductor substrate. A gate insulating film is then formed on the exposed semiconductor substrate.

Abstract: A polysilicon film is formed all over a surface of a semiconductor substrate, then is subject to a CMP process through a mask pattern as a stopper. Then, a metal film is formed all over the resulting surface, and is allowed at least a part of the polysilicon film and at least a part of the metal film to react with each other to silicidize the metal. This forms the gate electrode.

Abstract: Disclosed are an active material for non-aqueous electrolyte secondary battery usable as a power source for backup, which has a large battery capacity and which may prevent the increase in the internal resistance after a storage test; and a non-aqueous electrolyte secondary battery comprising the active material. The active material is used as a positive electrode active material or a negative electrode active material of a non-aqueous electrolyte secondary battery, and this is prepared by adding at least one additive element selected from a group consisting of Al, B, Nb, Ti and W to molybdenum dioxide; and the non-aqueous electrolyte secondary battery comprises the active material.

Abstract: The present invention can provide a composite negative electrode active material including a fused matter of a graphite material and a graphitizable carbon material undergoing graphitization. Such a composite negative electrode active material is prepared by heating a mixture of a graphite material and a graphitizable carbon material undergoing graphitization at 700° C. to 1300° C., and crushing the obtained fused matter. The use of the composite negative electrode active material makes it possible to provide a non-aqueous electrolyte secondary battery being excellent in output-input characteristics and having a high energy density and a long life.

Abstract: The invention provides a method of sandwich immunoassay comprising steps of, (a) forming a complex of an antigen and a first antibody by contacting the antigen with the first antibody which recognizes the antigen and which is labeled by a detectable labeling substance; and (b) fixing the complex formed in the step (a) to a solid phase by using a second antibody which recognizes the antigen and which is capable of binding to the solid phase, as well as a method for detecting an antigen in an analyte by using a method of sandwich immunoassay.

Abstract: A semiconductor device includes a vertically extending semiconductor portion above a semiconductor substrate, first and second diffusion regions being disposed near the bottom and top portions of the vertically extending semiconductor portion, respectively. A gate insulating film extends along the side surface of the vertically extending semiconductor portion which is separated by the gate insulating film from a gate electrode. The level of the top portion of the gate electrode is nearly equal to or lower than the level of the bottom portion of the second diffusion regions and the level of the bottom portion of the gate electrode is nearly equal to or higher than the level of the top portion of the first diffusion region.

Abstract: An assembly of an engine and a transmission is disclosed. An output shaft of the engine and an input shaft of the transmission extends in parallel to protrude from the assembly. The assembly typically comprises a first fitting portion that is formed in a crankcase of the engine and is configured to surround the output shaft, a second fitting portion that is formed in a housing of the transmission and is configured to surround the input shaft, and a coupling element having a first opening fitted to the first fitting portion and a second opening fitted to the second fitting portion. A center distance between the output shaft and the input shaft is fixed with the coupling element fitted to the first and second fitting portions.

Abstract: The invention provides a display device wherein provisions are made to be able to properly adjust the image viewing direction, viewing angle, or viewing range on the display device. The display device includes a display section capable of displaying independent images intended for a plurality of different viewing directions on the same screen, an information acquiring section for acquiring orientation information concerning the orientation of the images, and an image direction varying section for varying the orientation of the images based on the orientation information acquired by the information acquiring section.

Abstract: A rechargeable lithium battery including a positive electrode, a negative electrode and a nonaqueous electrolyte, said positive or negative electrode being an electrode which has, on a current collector, a thin film of active material that stores and releases lithium, the thin film of active material being divided into columns by gaps formed therein in a manner to extend in its thickness direction, and the columnar portions being at their bottoms adhered to the current collector, the rechargeable lithium battery being characterized in that the nonaqueous electrolyte includes a mixed solvent consisting of two or more different solvents and containing at least ethylene carbonate and/or vinylene carbonate as its constituent.

Abstract: A fuel injection valve is provided with a main body and a valve member. The main body has a fuel passage and a fuel injection opening formed at the downstream-end of the fuel passage. The valve member is provided in the fuel passage. The valve member is configured to move between a first position in which the valve member closes the fuel injection opening and a second position in which the valve member opens the fuel injection opening. A hardened layer is formed on abutment surfaces of the valve member and the main body that abut with each other. The hardness of this hardened layer is lower in its surface side than in its bottom side. According to this structure, the stress generated inside the hardened layer is suppressed, and breakage and detachment of the hardened layer are prevented.

Abstract: A display control device enables to conduct control of automatically switching a display image in a prescribed direction of a plurality of viewing directions to a content or a status desired by a user on a display unit which can display individual images in a plurality of viewing directions on a common screen. The display control device (control unit 2) for controlling a display unit which can display individual images in a plurality of viewing directions on a common screen conducts switching control of a display image in a prescribed direction of a plurality of viewing directions based on a predetermined display switching condition.