Abstract: A sensor electrode (31) provided between an insulating substrate (21) and a counter electrode (27) is electrically connected to a grid-shaped metal bridge (35) via an insulating layer.

Abstract: A sensor electrode (31) provided between an insulating substrate (21) and a counter electrode (27) includes a plurality of electrodes (32) arranged along a first direction and a plurality of electrodes (33) arranged along a second direction perpendicular to the first direction and insulated from the electrodes (32), and these electrodes (32, 33) are formed in the same plane.

Abstract: A continuously variable transmission includes: a transmission shaft; first to fourth power transmission elements that have a first rotation center axis coaxial with the transmission shaft; a plurality of rolling members that has a second rotation center axis; a transmission device configured to change a gear ratio between an input side and an output side by tilting each of the rolling members; a rotary shaft that is coupled with one of the first and second power transmission elements, and is provided with a cylindrical section; an annular member that is coupled with the rotary shaft, and configured to form an annular oil reservoir formed of lubricating oil; and a scraping up section configured to scrape up the lubricating oil by rotating in the circumferential direction.

Abstract: A monolithic three dimensional memory device includes a semiconductor substrate having a major surface and a doped well region of a first conductivity type extending substantially parallel to the major surface of the semiconductor substrate, a plurality of NAND memory strings extending substantially perpendicular to the major surface of the semiconductor substrate, and a plurality of substantially pillar-shaped support members extending substantially perpendicular to the major surface of the semiconductor substrate, each support member including an electrically insulating outer material surrounding an electrically conductive core material that extends substantially perpendicular to the major surface of the semiconductor substrate and electrically contacting the doped well region.

Abstract: A wireless communication apparatus includes: a first amplifier configured to amplify an input signal; a second amplifier configured to amplify the input signal when an input level of the input signal is equal to or larger than a given level; an impedance converter configure to switch an load impedance of the first amplifier and output a composite output of an output from the first amplifier and an output from the second amplifier; an impedance controller section configured to control a switching of the load impedance of the first amplifier based on a bandwidth of the input signal; a distortion compensation section configured to perform distortion compensation of the input signal and supply a compensated input signal to the first amplifier and the second amplifier; and a filter section configured to limit a band of a signal output from the impedance converter.

Abstract: In the present invention, a substrate is placed at a predetermined position on a substrate support even though the substrate is deviated on a substrate transfer unit. There is provided a substrate processing apparatus that includes a process chamber, a transfer chamber accommodating a substrate transfer unit, a substrate detecting unit, a memory unit configured to store a first reference position information, a second reference position information and a substrate reference position information and a controller configured to generate a detected position information representing a position of a substrate being transferred in the transfer chamber based on a detection result and to control the substrate transfer unit to place the substrate based on the detected position information, the first reference position information, the substrate reference position information and a difference between the first reference position information and the second reference position information.

Abstract: A continuously variable transmission includes: first to third power transmission components; a rolling component; a support shaft for the rolling component; a first guide member that includes a first guide portion for guiding a first protrusion portion of the inserted support shaft; a gear shift member that includes a gear change portion; a first actuator which tilts each rolling component by moving each second protrusion portion along the gear change portion with rotation of the gear shift member at a time an input-output gear ratio is changed; a second guide member that includes a second guide portion for guiding a second protrusion portion of the inserted support shaft; and a second actuator which prohibits rotation of the second guide member during reverse rotation of the first and second power transmission components and allows rotation of the second guide member during normal rotation of the first and second power transmission components.

Abstract: A method of making a monolithic three dimensional NAND string includes forming a select gate layer of a third material over a major surface of a substrate, forming a stack of alternating first material and second material layers over the select gate layer, where the first material, the second material and the third material are different from each other, and etching the stack using a first etch chemistry to form at least one opening in the stack at least to the select gate layer, such that the select gate layer acts as an etch stop layer during the step of etching.

Abstract: A signal generator generates a combined signal that is generated only in the period where supply of a pulse signal is effected, a pulse signal whose frequency is of a higher impulse repetition frequency than the frequency of the period setting signal and whose amplitude represents a voltage value that is lower than the high voltage HVDC value. A semiconductor switch accumulates electric charge on a capacitative element by means of the high voltage HVDC from the high voltage generator when the voltage value of the combined signal is lower than the set gate voltage value and generates an impulse voltage whose peak value is the value of the high voltage HVDC, by means of the electric charge that is discharged from the capacitative element when the voltage value of the combined signal exceeds the set gate voltage value.

Abstract: A continuously variable transmission includes a shaft, first and second rotary members, a sun roller, a carrier, planetary balls, a gear shifter for changing a gear ratio between input and output by tilting each of the planetary balls, a casing for accommodating these elements, and a lubricating oil supply opening for supplying lubricating oil into the casing. The casing includes a discharge opening for discharging the lubricating oil to the outside of the casing. The discharge opening is provided in a wall of the casing in an axial direction of the shaft and radially outside the lubricating oil supply opening. As seen in the axial direction, the discharge opening is formed either at a position that crosses a contact section between the planetary ball and each of the first and second rotary members or an auxiliary contact section, or radially outside the contact section or the auxiliary contact section.

Abstract: A stepless transmission includes: a transmission shaft; first to fourth power transmission elements; a plurality of rolling bodies clamped by the first and second power transmission elements disposed in confrontation with each other, and tiltably held by the fourth power transmission element; an axial force generator configured to generate axial force in an axial direction for pressing at least one of the first and second power transmission elements against the rolling bodies; and a transmission device configured to change a gear ratio between an input and output by tilting the rolling bodies. Young's moduli of a contact section and an additional contact section, in contact with the rolling body, of one of the first and second power transmission elements are larger than those of other one of the first and second power transmission elements.

Abstract: A display device (1) includes a display panel (12), a touch panel (14) for detecting contact of a target object with a display region (P) of the display panel (12) or approach thereof to the display region (P), and a casing (17) containing the display panel (12) and the touch panel (14), a minimum distance (d) between the touch panel (14) and an outside surface (A) being not larger than a detectable distance, within which the touch panel (14) is capable of detecting the contact of the target object with the outside surface (A) or the approach thereof to the outside surface (A).

Abstract: A liquid crystal display device equipped with in-cell touch panel functionality is configured to increase location determining performance by reducing a parasitic capacitance formed between drive electrodes and a counter electrode. A liquid crystal display device 1 equipped with touch panel functionality is configured such that (i) an active matrix substrate 4 includes pixel electrodes 43, (ii) a counter substrate 5 includes a counter electrode 16, drive electrodes 13, and detection electrodes 12, and (iii) the counter electrode 16 is provided with slits 16s for alignment control.

Abstract: A liquid crystal display device equipped with in-cell touch panel functionality is configured to increase location determining performance by reducing a driving load on sensor electrodes (location determining electrodes). A liquid crystal display device 1 equipped with touch panel functionality includes: drive electrodes 13; detection electrodes 12; drive electrode-specific auxiliary wires 13a; and detection electrode-specific auxiliary wires 12a, the drive electrode-specific auxiliary wires 13a and the detection electrode-specific auxiliary wires 12a being provided so as to overlap domain boundaries 6b.

Abstract: A select gate transistor for a NAND device includes a select gate electrode having a first side, a second side, and top and a bottom, a semiconductor channel located adjacent to the first side, the second side and the bottom of the select gate electrode, and a gate insulating layer located between the channel and the first side, the second side and the bottom of the select gate electrode.

Abstract: A distortion compensation apparatus including: an amplifier configured to amplify an input signal including a transmission signal and an impulse signal, the transmission signal being converted to a radio frequency signal for transmission, the impulse signal being not converted to a radio signal for transmission, a memory configured to store a plurality of distortion compensation coefficients for compensating distortion to the input signal, each of the plurality of distortion compensation coefficients being associated with an amplitude of the input signal, and a processor configured to select a distortion compensation coefficient from the plurality of distortion compensation coefficients based on an amplitude of the impulse signal included in the input signal, and update the selected distortion compensation coefficient based on the amplified impulse signal include in the amplified input signal.

Abstract: A semiconductor device manufacturing method includes: forming a first well of the first conductivity type in a substrate; forming a second well of the first conductivity type in a first region of the substrate; forming a third well of the second conductivity type underneath the second well in the first region of the substrate in a position overlapping with the first well located underneath the second well in the first region of the substrate; forming a fourth well, that surrounds the second well and has the second conductivity type, in the first region of the substrate; forming a fifth well of the first conductivity type above the first well in the second region of the substrate; and forming a sixth well of the second conductivity type above the first well in the second region of the substrate.

Abstract: A semiconductor storage device includes: memory cells including a transistor and a capacitor; bit lines; word lines; and sense amplifiers including first and second sense amplifiers, wherein the memory cells includes: a first memory cell group sharing a first auxiliary word line; and a second memory cell group sharing a second auxiliary word line, wherein the word lines includes a first word line coupled to the first auxiliary word line and a second word line coupled to the second auxiliary word line, the first word line is coupled to the first auxiliary word line in a first word line contact region, the second word line is coupled to the second auxiliary word line in a second word line contact region, the bit lines includes first and second bit lines coupled to the first sense amplifier on both sides of the first word line contact region.

Abstract: A power transmission device includes first and second rings arranged opposite each other, having a common rotation center axis, and rotatable relative to each other; a plurality of planetary balls having rotation center axes parallel to the rotation center axis, and radially arranged between the first and second rings and around the rotation center axis; a transmission control unit configured to change a rotation ratio between the first and second rings by changing the respective contact points of the first and second rings and each of the planetary balls through tilting motion of each of the planetary balls; and a rotation restricting unit disposed between the planetary balls adjacent to each other.

Abstract: Upon programming a semiconductor memory device including a first and a second n-wells, a first and a second p-channel memory transistors respectively formed in the first and the second n-wells, and a bit line connected to a drain of the first p-channel transistor and a drain of the second p-channel memory transistor, a first voltage is applied to the first bit line, a second voltage is applied to the first n-well, and a third voltage lower than the second voltage is applied to the second n-well.