Abstract: A wafer processing laminate, a wafer processing member, a temporary adhering material for processing a wafer, and a method for manufacturing a thin wafer, which facilitates to establish a temporary adhering the wafer and the support, enables to form a layer of uniform thickness on a heavily stepped substrate, and is compatible with the TSV formation and wafer back surface interconnect forming steps, and the wafer processing laminate includes a support, a temporary adhesive material layer formed thereon and a wafer laminated on the temporary adhesive material layer, where the wafer has a circuit-forming front surface and a back surface to be processed, wherein the temporary adhesive material layer includes a three-layered structure composite temporary adhesive material layer.

Abstract: The present invention is a temporary adhesive composition comprising: (A) non-aromatic saturated hydrocarbon group-containing organopolysiloxane; (B) an antioxidant; and (C) an organic solvent, wherein the component (A) corresponds to 100 parts by mass, the component (B) corresponds to 0.5 to 5 parts by mass, and the component (C) corresponds to 10 to 1000 parts by mass. There can be provided a temporary adhesive composition that has excellent thermal stability while maintaining solvent resistance and a method for manufacturing a thin wafer using this.

Abstract: The purpose of the present invention is to provide a mass spectrometer with high detection sensitivity to generate fine charged droplets and thereby improve the efficiency of sample ionization, and to reduce large droplets with high ionic strength. The present invention includes: liquid chromatograph separating means that separates a sample solution into components; a sample sprayer that sprays as droplets the sample solution separated and eluted by the liquid chromatograph separating means; ion generating means that charges the droplets and generates ions; a mass spectrometer that receives the ions and performs mass spectrometry on the ions; and a desolvation unit that removes a solvent contained in the charged droplets, wherein the desolvation unit includes a desolvation flow path chamber through which the charged droplets pass, heating means for heating the desolvation flow path chamber, and a helical droplet flow path formed in the desolvation flow path chamber.

Abstract: A wafer processing laminate, a wafer processing member, a temporary adhering material for processing wafer, and a method for manufacturing a thin wafer using the same. The wafer processing laminate includes a support, a temporary adhesive material layer formed thereon and a wafer laminated on the temporary adhesive material layer, where the wafer has a circuit-forming front surface and a back surface to be processed. The temporary adhesive material layer includes a first temporary adhesive layer of a thermoplastic organopolysiloxane polymer layer (A) releasably adhered on a surface of the wafer, a second temporary adhesive layer of a radiation curable polymer layer (B) laminated on the first temporary adhesive layer, and a third temporary adhesive layer of a thermoplastic organopolysiloxane polymer layer (A?) laminated on the second temporary adhesive layer and releasably adhered to the support.

Abstract: There is provided an image processing device including a converter configured to obtain, prior to performing an encoding process, image drawing information of an image capable of using upon encoding and to convert the obtained image drawing information into a parameter for encoding, and an encoding processor configured to perform the encoding process by changing contents of the encoding process according to the parameter for encoding converted by the converter.

Abstract: An editing apparatus is disclosed. A story determination block determines a story expressed by a time function and provides a reference for selecting an image from among candidate images. An evaluation value computation block computes an evaluation value for each of the candidate images for each selection time in the story based on the story determined by the story determination block and at least one feature value indicative of a feature of each of candidate images set to each thereof. An image selection block selects an image for each selection time from among the candidate images based on the computed evaluation value. An editing processing block links selection images that are images selected by the image selection block for each selection time to each other in a time-dependent manner.

Abstract: There is provided an editing apparatus including a story determination unit determining a story indicated by a time function as a reference to select an image from multiple candidate images, an evaluation value calculation unit calculating an evaluation value of each of the candidate images per selection time in the story, based on the story determined in the story determination unit and one or more feature values which are set for each of the multiple candidate images and indicate features of the candidate images, an image selection unit selecting an image per selection time from the candidate images, based on the evaluation value calculated in the evaluation value calculation unit, a candidate image correction unit correcting the selected candidate image based on the evaluation value, and an edit processing unit linking the image selected per selection time and the candidate image corrected based on the evaluation value, in chronological order.

Abstract: The present invention provided is the temporary adhesive for wafer processing which temporarily bonds a wafer having a circuit face on the front surface and a processing face on the back surface to a support, and includes a first temporary adhesive layer which is a layer (A) of a thermoplastic resin modified organopolysiloxane obtained by partial dehydration condensation of an organopolysiloxane resin containing a R21R22R23SiO1/2, and a SiO4/2 unit in a molar ratio of R21R22R23SiO1/2 unit/SiO4/2 unit of 0.6 to 1.7 and an organopolysiloxane represented by the following general formula (1), and a second temporary adhesive layer which is a thermosetting modified siloxane polymer layer (B) which is laminated on the first temporary adhesive layer and is releasably bonded to the support.

Abstract: A wafer processing laminate is provided comprising a support (3), a temporary adhesive layer (2), and a wafer (1). The temporary adhesive layer (2) has a trilayer structure consisting of a first temporary bond layer (A) of thermoplastic siloxane bond-free polymer, a second temporary bond layer (B) of thermoplastic siloxane polymer, and a third temporary bond layer (C) of thermosetting modified siloxane polymer. In a peripheral region, the second layer (B) is removed so that the first layer (A) is in close contact with the third layer (C).

Abstract: A mass spectrometer is provided including: a collision chamber of generating fragment ions by superimposingly applying an AC voltage and a first DC voltage between linear multipolar electrodes, and accelerating the fragment ions by applying a second DC voltage between a front stage electrode and a later stage electrode; a mass spectrometer unit of carrying out mass separation of the fragment ions; and a control unit of determining the second DC voltage based on the mass-to-charge ratios such that the rates of the fragment ions in the collision chamber become equal regardless of the mass-to-charge ratios. Herein, the control unit increases the second DC voltage as the mass-to-charge ratios selected by the mass spectrometer unit become larger. This allows the mass window to be wider even when a DC electric field is generated in order to solve a crosstalk drawback, in the movement direction of the molecular ions.

Abstract: The invention has an object to obtain an organic inorganic composite material having high activity and high selectivity, and suitable as a catalyst material having small elution of an active metal from a carrier, and further to obtain an organosilicon compound suitable for the preparation of the composite material. The composite material is an organic inorganic composite material comprising an organosilicon compound having at least two groups containing reactive silicon at a molecular end, bonded to one silicon atom constituting the organosilicon compound, and an inorganic oxide material, the organosilicon compound and the inorganic oxide material being bonded to each other through a plurality of groups containing reactive silicon of the organosilicon compound. The organosilicon compound is represented by the following general formula (1) or (2).

Abstract: There is disclosed a silphenylene skeleton-containing silicone type polymer comprising a repeating unit represented by the following general formula (1) and having a weight average molecular weight of 5,000 to 40,000. There can be a novel silphenylene skeleton-containing silicone type polymer which enables to satisfy both chemical resistance and adhesiveness to a substrate and can be used as a material for a thermosetting resin for forming coatings for protecting substrates, circuits, and interconnections; and a method for manufacturing the same.

Abstract: The invention provides a method for producing an arylhydroxylamine compound efficiently and safely under mild conditions. The method involves contacting a nitroaryl compound with a hydrogen source in the presence of a platinum catalyst supported on amino group-coordinated silica and a poisoning agent.

Abstract: A printed wiring board, including a printed wiring member which respectively has object conductor that is subjected to electromagnetic wave shielding on at least one surface of an insulating layer; and an electromagnetic wave shielding member which has an electromagnetic wave shielding layer composed of a low-resistance section and a high-resistance section on at least one surface of a base film. The printed wiring member and the electromagnetic wave shielding member are bonded together with interposition of insulating adhesive layers, and with arrangement of the electromagnetic wave shielding layer separately and in opposition so that the object conductor is covered. The electromagnetic wave shielding layer and the object conductor are composed of the same type of conductive material, and the electromagnetic wave shielding layer is not exposed at the circumferential end faces of the printed wiring board.

Abstract: A chemically amplified positive resist composition is provided comprising an alkali-insoluble or substantially alkali-insoluble polymer having an acid labile group-protected acidic functional group, an alkyl vinyl ether polymer, a photoacid generator, and a benzotriazole compound in a solvent. The composition forms on a substrate a resist film of 5-100 ?m thick which can be briefly developed to form a pattern at a high sensitivity and a high degree of removal or dissolution to bottom.

Abstract: The present invention provides a non-aromatic saturated hydrocarbon group-containing organopolysiloxane containing the following units (I) to (III): (I) a siloxane unit (T unit) represented by R1SiO3/2: 40 to 99 mol %; (II) a siloxane unit (D unit) represented by R2R3SiO2/2: 59 mol % or less; and (III) a siloxane unit (M unit) represented by R4R5R6SiO1/2: 1 to 30 mol %. There can be an organopolysiloxane, which is soluble in a nonpolar organic solvent so that the organopolysiloxane can be peeled in a short time, and which is hardly soluble in a polar organic solvent to be exemplarily used upon coating a photoresist onto a semiconductor side of a joined substrate and removing the photoresist therefrom so that the organopolysiloxane is not peeled from the supporting substrate upon coating a photoresist onto a semiconductor side of a joined substrate and removing the photoresist therefrom.

Abstract: In a chemically amplified positive resist composition comprising a base resin and an acid generator in a solvent, the base resin contains both an alkali-insoluble or substantially alkali-insoluble polymer having an acid labile group-protected acidic functional group having a Mw of 1,000-500,000 and an alkyl vinyl ether polymer having a Mw of 10,000-500,000. The composition forms on a substrate a resist film of 5-100 ?m thick which can be briefly developed to form a pattern at a high sensitivity and a high degree of removal or dissolution to bottom.

Abstract: A chemically amplified positive resist composition comprising (A) a substantially alkali insoluble polymer having an acidic functional group protected with an acid labile group, (B) an acid generator, and (C) a perfluoroalkyl ethylene oxide adduct or a nonionic fluorinated organosiloxane compound is coated, exposed to UV radiation having a wavelength of at least 150 nm, and developed. The composition has advantages of uniformity and minimized edge crown upon coating, and no scum formation after development.

Abstract: A film for semiconductor includes a support film, a second adhesive layer, a first adhesive layer and a bonding layer which are laminated together in this order. This film for semiconductor is configured so that it supports a semiconductor wafer laminated on the bonding layer thereof when the semiconductor wafer is diced and the bonding layer is selectively peeled off from the first adhesive layer when a chip is picked up. This film for semiconductor is characterized in that in the case where peel strength at 23° C. of the chip is defined as “F23 (cN/25 mm)” and peel strength at 60° C. of the chip is defined as “F60 (cN/25 mm)”, F23 is in the range of 10 to 80 and F60/F23 is in the range of 0.3 to 5.5. This makes it possible to improve a pickup property of the chip, to thereby prevent generation of defects in a semiconductor element.

Abstract: A film for semiconductor includes a support film, a second adhesive layer, a first adhesive layer and a bonding layer which are laminated together in this order. This film for semiconductor is configured so that it supports a semiconductor wafer laminated on the bonding layer thereof when the semiconductor wafer is diced and the bonding layer is selectively peeled off from the first adhesive layer when the semiconductor elements obtained by the dicing are picked up. This film for semiconductor is characterized in that an average thickness of the second adhesive layer is in the range of 20 to 100 ?m. This makes it possible to control cutting lines formed during the dicing so as to locate distal ends thereof within the first adhesive layer easily and reliably and to prevent defects which would be generated when the cutting lines come down to the support film.