Abstract: A semiconductor device includes an N-type MOS transistor and a P-type MOS transistor. The N-type MOS transistor has a first gate insulating film and a first gate electrode. The P-type MOS transistor has a second gate insulating film and a second gate electrode. The first gate insulating film and the second gate insulating film are made of silicon oxynitride, and the first gate insulating film and the second gate insulating film are different from each other in nitrogen concentration profile.

Abstract: A vehicle window glass which is capable of preventing a film formed on a surface of a glass plate from peeling off to thereby improve the appearance quality of an edge portion of the glass plate. The vehicle window glass comprises a polished edge portion of a glass plate and a surface of the glass plate. A film is integrally formed on the surface of the glass plate and on at least one side of the polished edge portion of the glass plate, and a side of the edge portion on which the film is integrally formed is exposed outside when the vehicle window glass is mounted on a vehicle.

Abstract: A semiconductor device includes a first MIS transistor and a second MIS transistor. The first MIS transistor includes a first gate electrode includes a second metal film formed on a first gate insulating film, and an insulating film formed, extending over side surfaces of the first gate electrode and upper surfaces of regions located in the first active region laterally outside the first gate electrode. The second MIS transistor includes a second gate electrode including a first metal film formed on a second gate insulating film and a conductive film formed on the first metal film, and the insulating film formed, extending over side surfaces of the second gate electrode and upper surfaces of regions located in the second active region laterally outside the second gate electrode. The first and second metal films are made of different metal materials.

Abstract: A first and second gate electrodes are formed on a first and second active regions, respectively. The first and second gate electrodes have a first and second metal-containing conductive films, respectively. The first and second metal-containing conductive films are formed on the isolation region for segmenting the first and second active regions to be spaced apart from each other. A third metal-containing conductive film, which is a part of each of the first and second gate electrodes, is continuously formed from a top of the first metal-containing conductive film through a top of the isolation region to a top of the second metal-containing conductive film. The third metal-containing conductive film is in contact with the first and second metal-containing conductive films.

Abstract: A semiconductor device including a first transistor of a first conductivity type provided on a first active region of a semiconductor region, and a second transistor of a second conductivity type provided on a second active region of the semiconductor region. The first transistor includes a first gate insulating film and a first gate electrode, the first gate insulating film contains a high-k material and a first metal, and the first gate electrode includes a lower conductive film, a first conductive film and a first silicon film. The second transistor includes a second gate insulating film and a second gate electrode, the second gate insulating film contains a high-k material and a second metal, and the second gate electrode includes a second conductive film made of the same material as the first conductive film, and a second silicon film.

Abstract: A semiconductor device includes: a first gate insulating film on a first region of a semiconductor substrate; a first gate electrode on the first gate insulating film; a second gate insulating film on a second region of the semiconductor substrate; and a second gate electrode on the second gate insulating film. The first gate insulating film includes a first insulating film composed of a first material containing a first metal, and the second gate insulating film includes a second insulating film composed of the first material and a second material containing a second metal.

Abstract: The semiconductor device includes: a transistor having a gate electrode formed on a semiconductor substrate and first and second source/drain regions formed in portions of the semiconductor substrate on both sides of the gate electrode; a gate interconnect formed at a position opposite to the gate electrode with respect to the first source/drain region; and a first silicon-germanium layer formed on the first source/drain region to protrude above the top surface of the semiconductor substrate. The gate interconnect and the first source/drain region are connected via a local interconnect structure that includes the first silicon-germanium layer.

Abstract: There is provided a vehicle window glass that can be manufactured at low cost and can efficiently cut off infrared rays impinging on passengers sitting on window seats most susceptible to sunlight exposure, and a manufacturing method for the same. With a glass substrate 1 held by a glass substrate holding member 4 in the vertical direction, a nozzle 2 is used to eject an infrared cutoff liquid 3 onto the upper portion 1b of the glass substrate 1. The infrared cutoff liquid 3 ejected onto the upper portion 1b of the glass substrate 1 flows vertically downward such as to be applied onto the glass substrate 1. The film thickness of the lower portion of an infrared cutoff film is greater than that of the upper portion of the same. The glass substrate 1 is dried for approximately five minutes at room temperature. Then, the glass substrate 1 onto which the infrared cutoff liquid 3 has been applied is placed in an oven preheated to 200° C.

Abstract: The following steps are carried out: forming a gate electrode on a semiconductor substrate with a gate insulating film interposed therebetween, forming a dummy gate electrode on the semiconductor substrate with a dummy gate insulating film interposed therebetween and forming another dummy gate electrode on the semiconductor substrate with an insulating film for isolation interposed therebetween; forming a metal film on the semiconductor while exposing the gate electrode and covering the dummy gate electrodes; and subjecting the semiconductor substrate to heat treatment and thus siliciding at least an upper part of the gate electrode. Since the gate electrode is silicided and the dummy gate electrodes are non-silicided, this restrains a short circuit from being caused between the gate electrode and adjacent one of the dummy gate electrodes.

Abstract: A semiconductor device includes a first gate electrode formed in a first region on a semiconductor substrate with a first gate insulating film sandwiched therebetween; and a second gate electrode formed in a second region on the semiconductor substrate with a second gate insulating film sandwiched therebetween. The first gate insulating film includes a first high dielectric constant insulating film with a first nitrogen concentration and the second gate insulating film includes a second high dielectric constant insulating film with a second nitrogen concentration higher than the first nitrogen concentration.

Abstract: A semiconductor memory device includes a memory cell and a dummy cell. The amount of leakage current per unit area in a capacitor in the dummy cell is larger than that in a capacitor in the memory cell.

Abstract: There is provided a vehicle window pane that can be manufactured at low cost and can reduce burning sensation of the skin of a passenger in the vehicle, and a manufacturing method therefor. With a glass plate 1 held by a glass plate holding member 4 in the vertical direction, a nozzle 2 is used to eject infrared cutoff liquid 3 onto the upper portion 1b of the glass plate 1. The infrared cutoff liquid 3 ejected onto the upper portion 1b of the glass plate 1 flows vertically downward, and is applied onto the glass plate 1. The glass plate 1 to which the infrared cutoff liquid 2 has been applied is dried for approximately five minutes at room temperature. Then, the glass plate 1 to which the infrared cutoff liquid 3 has been applied is placed in an oven preheated to 200° C., heated for ten minutes, and then cooled. The glass plate 1 having the infrared cutoff film thereon is thus formed.

Abstract: There are provided a glass plate having a thin film formed thereon that can reduce a change in reflection color caused by a change in angle to a glass plate surface on which a thin film is formed, and reduce the change in reflection color even if an uneven thin film having a difference in thickness is formed on the glass plate surface. The glass plate 10 having a thin film formed thereon includes a glass plate 11 having glass plate surfaces (a bottom surface 11a and a top surface 11b) and a thin film (an infrared ray cutting film) 12. The infrared ray cutting film 12 is formed on the top surface 11b of the glass plate 11. A thickness of the infrared ray cutting film 12 is 300 to 3000 nm. A mole ratio of the content of the ITO particles to the content of the silica in the infrared ray cutting film 12 is 0.6:9.4 to 2.3:7.7.

Abstract: A semiconductor device comprises a first MIS transistor and a second MIS transistor. The first MIS transistor includes a first gate insulating film formed on a first active region, and a first gate electrode formed on the first gate insulating film. The second MIS transistor includes a second gate insulating film formed on a second active region and made of an insulating material different from that of the first gate insulating film, and a second gate electrode formed on the second gate insulating film. Upper regions of the first gate electrode and the second gate electrode are electrically connected to each other on the isolation region located between the first active region and the second active region, and lower regions thereof are separated from each other with a sidewall insulating film made of the same insulating material as that of the first gate insulating film being interposed therebetween.

Abstract: A semiconductor device includes an N-type MOS transistor and a P-type MOS transistor. The N-type MOS transistor has a first gate insulating film and a first gate electrode. The P-type MOS transistor has a second gate insulating film and a second gate electrode. The first gate insulating film and the second gate insulating film are made of silicon oxynitride, and the first gate insulating film and the second gate insulating film are different from each other in nitrogen concentration profile.

Abstract: A p-type MIS transistor includes a first gate insulating film formed on a first active region; and a first fully silicided gate pattern that is obtained by fully siliciding a silicon film, is formed to extend over the first active region with the first gate insulating film sandwiched therebetween, and includes a first fully silicided gate electrode provided on the first active region and a first fully silicided gate line provided on the isolation region. The first fully silicided gate pattern includes, along a gate width direction, a portion having a first thickness and including the first fully silicided gate electrode and portions each having a second thickness larger than the first thickness and respectively disposed on both sides of the portion having the first thickness.

Abstract: A semiconductor device includes: an isolation region formed in a semiconductor substrate; an active region surrounded by the isolation region; and a first gate electrode formed on the isolation region and the active region and including a first region on the isolation region. The first region has a pattern width in a gate length direction larger than a pattern width of the first gate electrode on the active region. The first region includes a part having a film thickness different from a film thickness of the first gate electrode on the active region.

Abstract: A semiconductor device includes: an isolation region formed in a semiconductor substrate; an active region surrounded by the isolation region of the semiconductor substrate; a fully silicided first gate line formed on the active region; a fully silicided second gate line formed on the isolation region; a first sidewall formed on a side of the first gate line; a second sidewall formed on a side of the second gate line. The length between the top and bottom surfaces of the first sidewall is different from that between the top and bottom surfaces of the second sidewall.

Abstract: A heat-shielding laminated glass that excels in an infrared radiation shielding performance, exhibiting high transparency, and that is available at low cost even in the use of ITO microparticles as infrared radiation shielding microparticles. There is provided a heat-shielding laminated glass comprising multiple glass plates and, interposed between any glass plates, interlayers, wherein each of the multiple glass plates is a UV cut green glass of 1.4 to 2.5 mm thickness, total iron content thereof being in the range of 0.6 to 1.2% by weight in terms of Fe2O3, the green glass containing FeO in an amount, in terms of Fe2O3, of 15 to 40% based on the total iron, and wherein ITO microparticles with an average particle diameter of?0.2 ?m are dispersed in the interlayers, the ITO microparticles amounting to 0.4 to 0.

Abstract: A vehicle window glass which is capable of preventing a film formed on a surface of a glass plate from peeling off to thereby improve the appearance quality of an edge portion of the glass plate. The vehicle window glass comprises a polished edge portion of a glass plate and a surface of the glass plate. A film is integrally formed on the surface of the glass plate and on at least one side of the polished edge portion of the glass plate, and a side of the edge portion on which the film is integrally formed is exposed outside when the vehicle window glass is mounted on a vehicle.