Abstract: A method for partially treating a water-repellent glass sheet is disclosed which comprises irradiating part of a water-repellent glass film, formed on the water-repellent glass sheet, with a stream of plasma jets generated by a plasma jet irradiating gun. By such plasma jet irradiation, the film part can be removed easily even when the glass sheet has a curved surface. A water-repellent glass sheet with the film part removed is also disclosed.

Abstract: A method for partially treating a water-repellent glass sheet is disclosed which comprises irradiating part of a water-repellent glass film, formed on the water-repellent glass sheet, with a stream of plasma jets generated by a plasma jet irradiating gun. By such plasma jet irradiation, the film part can be removed easily even when the glass sheet has a curved surface.

Abstract: In a memory cell of a DRAM, that is, a semiconductor memory, a bit line connected to a bit line plug and a local interconnect are provided on a first interlayer insulating film. A connection conductor film of TiAlN is provided on the top and side faces of an upper barrier metal and side faces of a Pt film and a BST film. No contact is formed above the Pt film used for forming an upper electrode, and the upper electrode is connected to an upper interconnect (namely, a Cu interconnect) through the connection conductor film, a dummy lower electrode, a dummy cell plug and the local interconnect. Since the Pt film is not exposed to a reducing atmosphere, the characteristic degradation of a capacitor insulating film can be prevented.

Abstract: A semiconductor device has a capacitance insulating film having a perovskite structure represented by the general formula ABO3 (where each of A and B is a metal element) and first and second electrodes opposed to each other with the capacitance insulating film interposed therebetween. The capacitance insulating film is formed such that the composition of the metal element A or B is higher in the region thereof adjacent the first electrode than in the other region thereof.

Abstract: A method of producing a high nitrogen, ultra low carbon steel suitable to rolling material for use in cold rolled steel sheets having excellent age hardening property by an age hardening treatment after forming by working, with no defects in slabs or steel sheets, reliably, at a reduced cost and with a high productivity is proposed.

Abstract: In a DRAM memory cell that is a semiconductor memory device, a bit line connected to a bit line plug and local interconnect are provided on a first interlayer insulating film. A contact is not provided on a Pt film constituting an upper electrode, and a dummy lower electrode is in direct contact with a dummy barrier metal. That is, the upper electrode is connected to upper layer interconnect (Cu interconnect) by the dummy lower electrode, a dummy cell plug and the local interconnect. Since the Pt film is not exposed to a reducing atmosphere, deterioration of characteristics of a capacitive insulating film can be prevented.

Abstract: In a memory cell of a DRAM, that is, a semiconductor memory, a bit line connected to a bit line plug and a local interconnect are provided on a first interlayer insulating film. A connection conductor film of TiAlN is provided on the top and side faces of an upper barrier metal and side faces of a Pt film and a BST film. No contact is formed above the Pt film used for forming an upper electrode, and the upper electrode is connected to an upper interconnect (namely, a Cu interconnect) through the connection conductor film, a dummy lower electrode, a dummy cell plug and the local interconnect. Since the Pt film is not exposed to a reducing atmosphere, the characteristic degradation of a capacitor insulating film can be prevented.

Abstract: A memory cell in a DRAM, which is a semiconductor memory device, is provided with a bit line 21a connected to a bit line plug 20b and a local interconnect 21b, over a first interlevel insulating film 18. A conductor sidewall 40 of TiAlN is formed on side faces of hard mask 37, upper barrier metal 36, Pt film 35 and BST film 34. No contact hole is provided on the Pt film 35 constituting an upper electrode 35a. The upper electrode 35a is connected to an upper interconnect (a Cu interconnect 42) via the conductor sidewall 40, dummy lower electrode 33b, dummy cell plug 30 and local interconnect 21b. The Pt film 35 is not exposed to a reducing atmosphere, and therefore deterioration in characteristics of the capacitive insulating film 34a can be prevented.

Abstract: A glass article provided with an organic functional film on a surface thereof of the present invention is characterized in that a coating film removable with a solvent is formed on at least a portion of the functional film. A method for handling a glass article with a handing tool of the present invention is characterized in the a glass article is handled with a handling tool via a coating film removable with a solvent between a surface of the tool in contact with the glass article and a surface of the glass article.

Abstract: Coating liquid prepared by dissolving an acid and a silicon alkoxide into alcohol, containing at least one of either a silicon alkoxide or a hydrolyzate thereof (including a partial hydrolyzate) in an amount of 0.010 to 3% by weight (in terms of silica), an acid in terms of 0.0010 to 1.0 normality, and water in terms of 0 to 10% by weight is coated on a substrate to produce an article coated with a silica-based film. By this method for producing a silica-based film coated article, an excellent silica-based film coated article can be obtained without requiring baking and pretreatment. Furthermore, a functional film coated article excellent in durability can be produced in a short period of time and safely by using the abovementioned silica-based film as a primer film and applying thereon an organosilane having a hydrolyzable group and a functional group having a specific function or a hydrolyzate thereof.

Abstract: A disk driving apparatus functions as a changer and employs a slot-in method that calls for inserting or removing a disk through an insertion/removal opening 315,316. Included is a plurality of trays 11 for supporting a removable disk thereon and arranged one above another so as to be capable of moving up and down. A single-tray insertion/removal opening 315 is provided and dedicated to one of the trays 11. A common insertion/removal opening 316 is adapted to be shared by the other trays other than tray 11 located at the top or the bottom. A carrier mechanism is adapted to move any desired tray 11 to a loading position corresponding to the common insertion/removal opening 316. The apparatus also includes loading mechanisms 319,320, each of which serves to carry a disk back and forth between the corresponding insertion/removal opening 315,316 and the targeted tray 11.

Abstract: A first arm (3) of a articulated robot has a double arm structure composed of a first arm piece (3a) and a second arm piece (3b). The first arm piece (3a) transmits a drive force, and a housing (4a) of a second arm (4) is rotatably mounted to the first arm piece (3a) at the end thereof. The second arm piece (3b) houses cables and pipes or the like, and a cover (4b) of the housing (4a) is rotatably mounted to the second arm piece at the end thereof. The cover (4b) is fixed to the housing (4a) through a fixing tool (6). The housing (4a) is permitted to be opened by separating the housing (4a) and the cover (4b) from each other by causing the second arm piece (3b) to rotate relatively to the first arm piece (3a) after the removal of the fixing tool (6).

Abstract: A disk driving apparatus functions as a changer and employs a slot-in method that calls for inserting or removing a disk through an insertion/removal opening 315,316. Included is a plurality of trays 11 for supporting a removable disk thereon and arranged one above another so as to be capable of moving up and down. A single-tray insertion/removal opening 315 is provided and dedicated to one of the trays 11. A common insertion/removal opening 316 is adapted to be shared by the other trays other than tray 11 located at the top or the bottom. A carrier mechanism is adapted to move any desired tray 11 to a loading position corresponding to the common insertion/removal opening 316. The apparatus also includes loading mechanisms 319,320, each of which serves to carry a disk back and forth between the corresponding insertion/removal opening 315,316 and the targeted tray 11.

Abstract: A disk driving apparatus which functions as a disk changer and employs a slot-in method that calls for inserting or removing a disk CD through a disk insertion/removal opening 315,316. The disk driving apparatus has reduced dimensions and is more convenient to insert or remove disks into or from the apparatus. Included is a plurality of trays 11 which are adapted to support a removable disk CD thereon and are arranged one above another in such a manner as to be capable of moving up and down. A single-tray disk insertion/removal opening 315 is provided and dedicated to one of the trays 11, i.e. the uppermost tray or the bottommost tray. A common disk insertion/removal opening 316 is provided and adapted to be shared by all the other trays than said tray 11 located at the top or the bottom. A carrier mechanism is provided and adapted to move any desired tray 11 to a loading position that corresponds to the common disk insertion/removal opening 316.

Abstract: A manufacturing method for a semiconductor device, whereby poly-silicon serving as an etching stopper is formed above a redundant fuse at the same time as a cell plate is. A silicon nitride film, an oxide film, and another oxide film on the redundant fuse are consecutively etched using the poly-silicon as the etching stopper. Then the poly-silicon is etched.

Abstract: Formed in a second interlayer dielectric are a first contact hole and a second contact hole. The first and second contact holes each extend to a first-level interconnect line. Tungsten is formed on the entirety of a substrate to form a first plug, a second plug, and a tungsten layer. A silicon oxide layer is formed. Thereafter, a patterning process is carried out to form a second-level interconnect line which is connected with the first plug and a top protective layer, and the top of the second plug remains exposed. A sidewall is formed on the side surfaces of the second-level interconnect line and the top protective layer. Subsequently, a third-level interconnect line, which is connected with the exposed second plug, is formed. Such arrangement not only reduces the number of contact hole formation masks, it also cuts down the number of fabrication steps. Further, the aspect ratio of the second contact hole becomes lower thereby achieving highly reliable semiconductor devices.

Abstract: A method of the invention for fabricating a semiconductor device includes the steps of: forming an oxide film having a non-uniform thickness on silicon; reducing at least a portion of the oxide film using gas containing a metal element, and growing a metal film containing the metal element on the silicon by reacting an exposed surface of the silicon with the gas; and removing the metal film.

Abstract: A compact disk changer includes a magazine having an inner body and an outer body that are rotatable independently of one another about a common axis of rotation. The inner and outer bodies are slideably interconnected by a helical member so that relative rotation between the bodies in a first direction increases the axial spacing between them and relative rotation in a second direction decreases the axial spacing. This construction reduces the size of the changer and does not require precision tolerances between moving parts. A plurality of compact discs are stacked within the magazine, and each disk is supported by a disk holder. When the disk at the top or end of the sack is to be played, relative rotation between the inner and outer bodies creates an axially extending space adjacent the selected disk and a playing mechanism is inserted into that space.

Abstract: A method of the invention for fabricating a semiconductor device includes the steps of: forming an oxide film having a non-uniform thickness on silicon; reducing at least a portion of the oxide film using gas containing a metal element, and growing a metal film containing the metal element on the silicon by reacting an exposed surface of the silicon with the gas; and removing the metal film.

Abstract: A compact disk changer includes a magazine having an inner body and an outer body that are rotatable independently of one another about a common axis of rotation. The inner and outer bodies are slideably interconnected by a helical member so that relative rotation between the bodies in a first direction increases the axial spacing between them and relative rotation in a second direction decreases the axial spacing. This construction reduces the size of the changer and does not require precision tolerances between moving parts. A plurality of compact discs are stacked within the magazine, and each disk is supported by a disk holder. When the disk at the top or end of the stack is to be played, relative rotation between the inner and outer bodies creates an axially extending space, adjacent the selected disk and a playing mechanism is inserted into that space.