Abstract: A rear underbody which forms a rear-under section of a vehicle body is provided with a pair of rear floor side members disposed along a longitudinal direction of the vehicle body in respective vicinities of both end portions of the rear underbody in a transverse direction of the vehicle body. The pair of rear floor side members each forms an enclosed cross-sectional configuration which extends in the longitudinal direction of the vehicle body. A cross member which extends substantially straight in the transverse direction of the vehicle body is disposed apart from and under a rear floor pan between the pair of rear floor side members at respective substantially central portions of a pair of rear wheel house inners. Both end portions, in the transverse direction of the vehicle body, of the cross member are respectively welded to an inner surface of the inside wall portion, in the transverse direction of the vehicle body, of the rear floor side member.

Abstract: A method of the invention for fabricating a semiconductor device includes the steps of: forming an oxide film having a non-uniform thickness on silicon; reducing at least a portion of the oxide film using gas containing a metal element, and growing a metal film containing the metal element on the silicon by reacting an exposed surface of the silicon with the gas; and removing the metal film.

Abstract: A rear underbody which forms a rear-under section of a vehicle body is provided with a pair of rear floor side members disposed along a longitudinal direction of the vehicle body in respective vicinities of both end portions of the rear underbody in a transverse direction of the vehicle body. The pair of rear floor side members each forms an enclosed cross-sectional configuration which extends in the longitudinal direction of the vehicle body. A cross member which extends substantially straight in the transverse direction of the vehicle body is disposed apart from and under a rear floor pan between the pair of rear floor side members at respective substantially central portions of a pair of rear wheel house inners. Both end portions, in the transverse direction of the vehicle body, of the cross member are respectively welded to an inner surface of the inside wall portion, in the transverse direction of the vehicle body, of the rear floor side member.

Abstract: A method of fabricating a semiconductor memory device on a semiconductor substrate is disclosed. A gate electrode that becomes a word line, a bit line, and a charge-storage electrode are formed in a memory cell array region of a semiconductor substrate. A capacitor insulator layer and a plate electrode are formed in that order. Then, a BPSG film is formed in the memory cell array region and in the peripheral circuit region. A resist pattern is formed on the BPSG film, leaving the memory cell array region exposed. Using the resist pattern thus formed as a mask, an etching treatment is applied to remove an upper surface portion of the BPSG film lying within the memory cell array region by a given amount. After the resist pattern is removed, the BPSG film is heated in order that it reflows to planarize.

Abstract: After a word line is formed on a semiconductor substrate, a side-wall insulating film is formed on the side faces of the word line. Subsequently, a first insulating film is deposited thereon. The resulting first insulating film is formed with an opening for a bit line, through which a bit line having an on-bit-line insulating film on its top surface is formed. Thereafter, a second insulating film is deposited thereon. An opening for a charge-storage electrode is then formed in the first and second insulating film by removing, by a specified thickness, the portions of the first insulating film, on-bit-line insulating film, and second insulating film lying in a memory cell array region, followed by the deposition of a charge-storage electrode through the opening for a charge-storage electrode.

Abstract: A semiconductor memory of the invention includes a semiconductor substrate having a plurality of transistors, a plurality of stacked capacitors connected to portions of the plurality of transistors, a plurality of first level interconnection layers connected to other portions of the plurality of transistors, and a plurality of second level interconnection layers disposed above the stacked capacitors and the first level interconnection layers. Each of the plurality of stacked capacitors includes a first electrode layer, a capacitance insulating film formed on top of the first electrode layer, and a second electrode layer formed on top of the capacitance insulating film. The second electrode layer is connected to a portion of one of the plurality of second level interconnection layers. At least portions of the plurality of first level interconnection layers are connected to other portions of the plurality of second level interconnection layers.

Abstract: A method of fabricating a semiconductor device is disclosed. The method comprises the steps of: forming a multi-layer film comprising two or more kinds of layers; performing first etching for patterning said multi-layer film under a first etching condition; and performing second etching for forming irregularities in the side faces of said patterned multi-layer film under a second etching condition.

Abstract: A semiconductor memory device includes a single crystalline semiconductor substrate having a main surface, a plurality of active regions formed at the main surface, and an isolation region which is formed at the main surface and isolates the active regions from one another. Each of the active regions has a transistor region and a capacitor region. The capacitor region has a trench formed in the single crystalline semiconductor substrate. An inner wall of the trench is covered with an insulating layer. At least a portion of the transistor region and the insulating layer are both covered with a semiconductor layer. A portion of the semiconductor layer which covers at least the portion of the transistor region is an epitaxial layer. A portion of the semiconductor layer which covers the insulating layer is a polycrystalline layer, which functions as a storage node of a capacitor.

Abstract: A fabrication method for a semiconductor integrated circuits which permits the self-aligned formation of contact windows without causing shorts or breaks in the interconnecting lines in the device is provided. After forming gate electrodes and source/drain regions of transistors on a semiconductor substrate, an etch-stop layer and a BPSG film are successively deposited over the gate electrodes and the source/drain regions. After a resist having a contact window pattern is formed on the BPSG film, an isotropic dry etching using a microwave plasma is performed to etch the BPSG film. According to the isotropic dry etching, the laterally etching rate in the BPSG film can be controlled by adjusting the RF power, and a silicon dioxide film can be used as the etch stop layer. After the BPSG flow process, the etch stop layer on the contact region is etched away to form contact windows.

Abstract: In a method for manufacturing DRAMs in a stacked memory cell type, an edge portion of each bit line is bared upon etching a first insulating film, the bared edge portion is etched to from an opening and an inner peripheral surface of the opening is covered by a second insulating film. There is also disclosed a method wherein second and third insulating films and second conductive film are stacked on a first insulating film, a second conductive film is formed and the second conductive film and the first conductive film are partially etched whereby the unetched portions of the first conductive film serve as electrode planes of charge storage electrodes.

Abstract: A rear under body structure of a vehicle in which a fuel tank is located on the rear side of a seat back of a rear seat, and is arranged on substantially the same straight line as an axis of a rear axle and on the lower side of a rear floor pan. Accordingly, the degree of freedom of the design of the styling of a rear windshield and its peripheral components of the vehicle is enhanced.

Abstract: A method of fabricating a semiconductor device is disclosed. The method comprises the steps of: forming a multi-layer film comprising two or more kinds of layers; performing first etching for patterning said multi-layer film under a first etching condition; and performing second etching for forming irregularities in the side faces of said patterned multi-layer film under a second etching condition.

Abstract: A method is provided for producing a semiconductor device characterized by filling hollows having a high aspect ratio with a semiconductor film doped with impurities as dopants and an undoped semiconductor film, given that the doped polycrystalline Si film produced by thermal decomposition of reactive gases mixed with impurity gases and the undoped polycrystalline Si film produced by thermal decomposition of reactive gases containing no impurity gas have different step coverage characteristics from each other. The method allows uniform distribution of dopants as well as improvement of processing throughput by forming sequentially the two types of semiconductor films in one reaction chamber.

Abstract: A tape winding direction switch device of a cassette tape recorder wherein a switching operation member which is operated in accordance with a fast forward lever and a fast rewinding lever is provided so as to operate a gear engagement clutch plate which selectively rotates a pair of reel mountings, a tape winding direction switching plate is connected elastically through a switching rotary nember to the switching operation member, and the fast forward lever and the fast rewinding lever are operated without any concern with the tape winding direction switching plate.

Abstract: A head device of a tape player equipped with an autoreverse mechanism in which a head is shifted in the widthwise direction of a magnetic tape at the time of reverse mode so as to be shifted from the forward track to the reverse track. A head driving body having a forward supporting surface which supports at a forward position a head supporting body which is movably provided in the widthwise direction of the magnetic tape and having a reverse supporting surface which supports it at a reverse position is provided, and an adjusting screw which is in contact with the forward supporting surface of the head driving body and an adjusting screw which is in contact with the reverse supporting surface are provided in one of supporting body bearing portions of the head supporting body.

Abstract: A tape winding end detecting device of a tape recorder wherein a reduced speed rotary body is arranged in a driving system from pair of reel mountings to an electric motor, a cam is provided on the rotary body, a switching lever is engaged to the cam so as to move a lock lever for holding operation levers of a tape recorder in accordance with the stopping of the rotation of the reel mounting and to release the operation levers, and an electric motor switch operation member is engaged to the cam in such a manner that the return timing of the electric motor switch operation member is arranged to be delayed relative to the return timing of the lock lever.

Abstract: A structure for swingably supporting a lower suspension arm of a vehicle suspension on the chassis of the vehicle through a bracket. The bracket has a main part swingably supporting the lower suspension arm and connected to the chassis, and an extension extending from the main part in the longitudinal direction of the chassis and connected at a position which is vertically spaced from the position at which said main part is connected to the chassis and on the opposite side of the axis of swinging of the lower suspension arm to the position where the main part is connected to the chassis. With this arrangement, displacement of the bracket by any force transmitted through the lower suspension arm and acting in the longitudinal direction is minimized.

Abstract: An automatic seat belt device has a seat belt guide ring pivotally secured to the bent of a stationary guide having an L-shaped section bent parallel to the lateral direction of the vehicle, the guide being mounted to the lateral side of a seat cushion. The seat belt guide ring is formed substantially in triangular shape and formed with a long guiding hole for inner seat belt along one side thereof. The guide ring is pivotal in the lateral direction. Twisting of the seat belt at the guide ring thereby can be prevented, and slack in the guide ring can be removed in case of upward or downward longitudinal slack of the belt by the clockwise or counterclockwise rotation of the guide ring.

Abstract: Fuel supplying means for supplying fuel into a fuel tank provided under a floor tunnel for use in a front engine-front wheel drive vehicle or a rear engine-rear wheel drive type vehicle. The fuel supplying means includes an inner filler pipe connected to the fuel tank and an outer filler pipe extending along a cross member located across the vehicle. An inner end of the outer filler pipe is connected through a hose to the inner filler pipe. The outer filler pipe has a bracket for fastening the outer filler pipe to the vehicle body.

Abstract: An automatic system for use in a motor vehicle has an outer webbing, both ends of which are secured to a vehicle door and an inner webbing, one end of which is connected to the intermediate portion of the outer webbing through a ring joint movable along the outer webbing and the other end of which is retracted by a retractor on a vehicle floor. A guide lever is provided at an inner side of an occupant's seat, which includes a main body fixed to the inner side of the seat and a webbing guide portion on the top of the main body. The webbing guide portion has an opening through which the inner webbing passes and is rotatable around an axis extending laterally of the vehicle, whereby the webbing guide portion presents a suitable position and angle to guide the inner webbing at any condition, for example, with or without an occupant on the seat.