Abstract: A semiconductor device includes a substrate, a semiconductor layer, an element region, and fin transistors. The substrate includes a principal surface. The semiconductor layer is formed as a surface layer or on the principal surface of the substrate, the surface layer being the principal surface of the substrate. The semiconductor layer has a crystal structure in which an angle between two of crystal orientations with equivalent relationships on a crystal plane having a correspondence with the principal surface of the substrate is 60 degrees or 120 degrees. The element region includes unit element regions formed on the principal surface of the substrate. The fin transistors are formed in the semiconductor layer, in the respective unit element regions. The fin transistors radially extend from a center toward an outer periphery of the element region. Adjacent two of the fin transistors have a spacing with a 60° angle or a 120° angle.

Abstract: A source layer is provided on a first p-type layer made of a nitride-based semiconductor, and includes a semiconductor region including electrons as carriers. A drain layer faces the source layer in a first direction on the first p-type layer with a gap being provided therebetween, and includes a semiconductor region including electrons as carriers. A channel structure is provided between the source layer and the drain layer on the first p-type layer, in which a channel region and a gate region are alternately disposed in a second direction perpendicular to the first direction. A channel layer included in the channel structure forms at least a part of the channel region, and is made of a nitride-based semiconductor. A gate layer included in the channel structure forms at least a part of the gate region, and electrically connects a gate electrode and the first p-type layer.

Abstract: A first nitride semiconductor layer and a second nitride semiconductor layer are laminated in a first direction. The first and second nitride semiconductor layers form a heterojunction, and a two-dimensional carrier gas is induced in the first nitride semiconductor layer. A drain electrode is opposite to a source electrode via gate electrode in a third direction. The source electrode and the drain electrode conduct with the first nitride semiconductor layer. The first and second nitride semiconductor layers form a Schottky junction with the gate electrode. A first layer is located between the gate electrode and the drain electrode in the third direction and is in contact with the gate electrode, and is in contact with the second nitride semiconductor layer in a second direction. The first layer suppresses induction of the two-dimensional carrier gas in the first nitride semiconductor layer opposite to the first layer in the first direction.

Abstract: A kneading device for dispersing a dispersoid in a dispersion medium includes a casing in which a kneading material containing the dispersion medium and the dispersoid is accommodated, a rotor disposed in the casing and kneading the kneading material while dispersing the dispersoid in the dispersion medium by rotating about a rotation axis, and a detection unit detecting a dispersion degree of the dispersoid in the dispersion medium by observing a state of the kneading material in the casing.

Abstract: Reliability of a gate resistor element during high-temperature operation is enhanced. A semiconductor device includes a drift layer, a base layer, an emitter layer, a gate insulation film, a gate electrode, a gate pad electrode, a first resistance layer, and a first nitride layer. A resistor of the first resistance layer has a negative temperature coefficient. The first resistance layer is made of hydrogen-doped amorphous silicon. The first nitride layer is made of a silicon nitride layer or an aluminum nitride layer.

Abstract: Provided is a technique capable of suppressing a short channel effect occurring in accordance with miniaturization. A semiconductor device includes: a second nitride semiconductor layer on an upper surface of a first nitride semiconductor layer; a source electrode and a drain electrode on part of an upper surface of the second nitride semiconductor layer; and a gate electrode on a lower surface of the first nitride semiconductor layer between the source electrode and the drain electrode in a plan view, wherein the second nitride semiconductor layer has a larger bandgap than the first nitride semiconductor layer, and the drain electrode is separated from the source electrode.

Abstract: Reliability of a gate resistor element during high-temperature operation is enhanced. A semiconductor device includes a drift layer, a base layer, an emitter layer, a gate insulation film, a gate electrode, a gate pad electrode, a first resistance layer, and a first nitride layer. A resistor of the first resistance layer has a negative temperature coefficient. The first resistance layer is made of hydrogen-doped amorphous silicon. The first nitride layer is made of a silicon nitride layer or an aluminum nitride layer.

Abstract: There is provided a kneading device for dispersing a dispersoid in a non-conductive material. The kneading device includes a pressure measurement unit that has a pressure receiving portion which comes into contact with a kneading substance formed of the non-conductive material and the dispersoid, and that measures a pressure value applied to the kneading substance formed of the non-conductive material and the dispersoid, and a determination unit that determines a dispersed state of the dispersoid dispersed in the non-conductive material, based on the pressure value measured by the pressure measurement unit.

Abstract: A semiconductor device according to an embodiment includes a first GaN-based semiconductor layer, a second GaN-based semiconductor layer provided on the first GaN-based semiconductor layer and having a wider band gap than the first GaN-based semiconductor layer, a source electrode electrically connected to the second GaN-based semiconductor layer, a drain electrode electrically connected to the second GaN-based semiconductor layer, a gate electrode provided between the source electrode and the drain electrode, and a passivation film provided on the second GaN-based semiconductor layer between the source electrode and the gate electrode and between the gate electrode and the drain electrode, the passivation film including a first insulating film and a second insulating film, the first insulating film including nitrogen, the first insulating film having a thickness equal to or greater than 0.2 nm and less than 2 nm, the second insulating film including oxygen and provided on the first insulating film.

Abstract: A semiconductor device includes: a first GaN based semiconductor layer; a second GaN based semiconductor layer disposed on the first layer and having a bandgap larger than that of the first layer; a first electrode disposed on the second layer; a second electrode disposed on the second layer; a p-type third GaN based semiconductor layer disposed between the first electrode and the second electrode on the second layer; a third electrode disposed on the third layer; a p-type fourth GaN based semiconductor layer disposed directly on the second layer and disposed separated from the third layer; a first insulating film disposed on the fourth layer; and a first field plate electrode disposed interposing the first insulating film in a space with the fourth layer, the first field plate electrode being separated from the fourth layer, and the first field plate electrode electrically connected to the first electrode.

Abstract: A semiconductor device includes a semiconductor region, a gate electrode, and a first gate insulating film provided between the semiconductor region and the gate electrode and containing a material having a chemical composition expressed by (SiO2)n (Si3N4)m (wherein n and m are positive integers), in the material, at least one silicon atom being bonded with at least one oxygen atom and at least one nitrogen atom.

Abstract: Provided is a kneading device 1 for dispersing a dispersoid in a dispersion medium. The kneading device includes a casing in which a kneading material containing the dispersion medium and the dispersoid is accommodated, a rotor disposed in the casing and kneading the kneading material while dispersing the dispersoid in the dispersion medium by rotating about a rotation axis, and a detection unit detecting a dispersion degree of the dispersoid into the dispersion medium by observing a state of the kneading material in the casing.

Abstract: An imaging device includes: an imaging unit that creates a first image of a subject captured with a light emitting element not emitting light and a second image of the subject captured with the light emitting element emitting light; an image processor that creates a difference image being difference between the first image and the second image, and detects the subject according to the difference image; a luminance detector that detects luminance of the first image and luminance of the difference image; a target luminance setting unit that sets target luminance of the difference image according to the luminance of the first image detected by the luminance detector; and a sensitivity adjusting unit that adjusts imaging sensitivity of the imaging unit such that the luminance of the difference image detected by the luminance detector approaches the target luminance set by the target luminance setting unit.

Abstract: A semiconductor device of an embodiment includes a first GaN-based semiconductor layer, a second GaN-based semiconductor layer provided on the first GaN-based semiconductor layer and having a larger bandgap than the first GaN-based semiconductor layer, a source electrode provided on the second GaN-based semiconductor layer, a drain electrode provided on the second GaN-based semiconductor layer, a recess provided between the source electrode and the drain electrode in the second GaN-based semiconductor layer, a gate insulating film provided on a surface of the recess, and a gate electrode provided on the gate insulating film and having an end portion in a gate width direction, located in the recess.

Abstract: A semiconductor device includes a nitride semiconductor layer, a first electrode and second electrode on the nitride semiconductor layer, a gate electrode, and a gate insulating layer between the nitride semiconductor layer and the gate electrode. The gate insulating layer has a first oxide region containing at least any one element of aluminum and boron, gallium, and silicon. When a distance between the first end portion and the second end portion of the first oxide region is defined as d1, and a position separated by d1/10 from the first end portion toward the second end portion is defined as a first position, an atomic concentration of gallium at the first position is 80% or more and 120% or less of that of the at least any one element.

Abstract: A semiconductor device includes a semiconductor region, a gate electrode, and a first gate insulating film provided between the semiconductor region and the gate electrode and containing a material having a chemical composition expressed by (SiO2)n (Si3N4)m (wherein n and m are positive integers), in the material, at least one silicon atom being bonded with at least one oxygen atom and at least one nitrogen atom.

Abstract: A semiconductor device according to an embodiment includes a semiconductor region, a gate electrode, and a first gate insulating film provided between the semiconductor region and the gate electrode and containing a material having a chemical composition expressed by (SiO2)n(Si3N4)m (where n and m are positive integers), in the material, at least one silicon atom being bonded with at least one oxygen atom and at least one nitrogen atom.

Abstract: An information processing apparatus whereby the detection accuracy of a face direction of a driver of a vehicle can be improved, comprises an image acquiring part for acquiring an image including a face of a driver of a vehicle, a detecting part for detecting a face direction of the driver in the image acquired by the image acquiring part, an information acquiring part for acquiring information concerning a traveling condition of the vehicle, a first deciding part for deciding whether the vehicle is in a specified traveling condition based on the information acquired by the information acquiring part, and a reference determining part for determining a reference of the face direction of the driver based on the face direction of the driver while the vehicle is decided to be in the specified traveling condition by the first deciding part.

Abstract: If an alert to distracted driving is disabled, the driver can be alerted insufficiently in situations that take attention. An alert control apparatus (300) includes data obtaining units (41 to 43) that obtain sensing data (a to j) from sensors (6 to 15), a railroad crossing recognizer (44) that recognizes a railroad crossing in front of a vehicle based on the sensing data, and a crossing entry determiner (45) that determines whether the vehicle has entered the railroad crossing based on the sensing data, and a criterion changer (46) that sets, for an area defined in front of the vehicle, a determination criterion defined for causing a distracted driving alert device (200) to generate an alert in response to detection of the vehicle entering the railroad crossing.

Abstract: An alert may not be generated at railroad crossings. An alert control apparatus (300) includes data obtaining units (41 to 43) that obtain sensing data (a to j) from sensors (6 to 15), a railroad crossing recognizer (44) that recognizes the position of a railroad crossing relative to a vehicle based on the sensing data, and a criterion changer (46) that changes, based on the recognition result, a determination criterion used by a distracted driving alert device (200) to generate an alert to distracted driving to a criterion with which the alert is more likely to be generated while the vehicle is passing the railroad crossing than at other times.