Patents by Inventor Hisashi Saito

Hisashi Saito has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11446844
    Abstract: A kneading device for dispersing a dispersoid in a dispersion medium includes a casing in which a kneading material containing the dispersion medium and the dispersoid is accommodated, a rotor disposed in the casing and kneading the kneading material while dispersing the dispersoid in the dispersion medium by rotating about a rotation axis, and a detection unit detecting a dispersion degree of the dispersoid in the dispersion medium by observing a state of the kneading material in the casing.
    Type: Grant
    Filed: December 2, 2019
    Date of Patent: September 20, 2022
    Assignee: NIHON SPINDLE MANUFACTURING CO., LTD.
    Inventors: Hisashi Saito, Yoshihiko Nagata, Takamasa Kishima
  • Patent number: 11373998
    Abstract: Reliability of a gate resistor element during high-temperature operation is enhanced. A semiconductor device includes a drift layer, a base layer, an emitter layer, a gate insulation film, a gate electrode, a gate pad electrode, a first resistance layer, and a first nitride layer. A resistor of the first resistance layer has a negative temperature coefficient. The first resistance layer is made of hydrogen-doped amorphous silicon. The first nitride layer is made of a silicon nitride layer or an aluminum nitride layer.
    Type: Grant
    Filed: January 16, 2019
    Date of Patent: June 28, 2022
    Assignee: MITSUBISHI ELECTRIC CORPORATION
    Inventors: Satoshi Okuda, Tatsuro Watahiki, Hisashi Saito, Hiroki Muraoka
  • Publication number: 20220085197
    Abstract: Provided is a technique capable of suppressing a short channel effect occurring in accordance with miniaturization. A semiconductor device includes: a second nitride semiconductor layer on an upper surface of a first nitride semiconductor layer; a source electrode and a drain electrode on part of an upper surface of the second nitride semiconductor layer; and a gate electrode on a lower surface of the first nitride semiconductor layer between the source electrode and the drain electrode in a plan view, wherein the second nitride semiconductor layer has a larger bandgap than the first nitride semiconductor layer, and the drain electrode is separated from the source electrode.
    Type: Application
    Filed: February 19, 2019
    Publication date: March 17, 2022
    Applicant: Mitsubishi Electric Corporation
    Inventors: Hisashi SAITO, Eiji YAGYU
  • Publication number: 20210366901
    Abstract: Reliability of a gate resistor element during high-temperature operation is enhanced. A semiconductor device includes a drift layer, a base layer, an emitter layer, a gate insulation film, a gate electrode, a gate pad electrode, a first resistance layer, and a first nitride layer. A resistor of the first resistance layer has a negative temperature coefficient. The first resistance layer is made of hydrogen-doped amorphous silicon. The first nitride layer is made of a silicon nitride layer or an aluminum nitride layer.
    Type: Application
    Filed: January 16, 2019
    Publication date: November 25, 2021
    Applicant: Mitsubishi Electric Corporation
    Inventors: Satoshi OKUDA, Tatsuro WATAHIKI, Hisashi SAITO, Hiroki MURAOKA
  • Publication number: 20200306707
    Abstract: There is provided a kneading device for dispersing a dispersoid in a non-conductive material. The kneading device includes a pressure measurement unit that has a pressure receiving portion which comes into contact with a kneading substance formed of the non-conductive material and the dispersoid, and that measures a pressure value applied to the kneading substance formed of the non-conductive material and the dispersoid, and a determination unit that determines a dispersed state of the dispersoid dispersed in the non-conductive material, based on the pressure value measured by the pressure measurement unit.
    Type: Application
    Filed: February 18, 2020
    Publication date: October 1, 2020
    Inventors: Hisashi Saito, Takamasa Kishima
  • Patent number: 10784361
    Abstract: A semiconductor device according to an embodiment includes a first GaN-based semiconductor layer, a second GaN-based semiconductor layer provided on the first GaN-based semiconductor layer and having a wider band gap than the first GaN-based semiconductor layer, a source electrode electrically connected to the second GaN-based semiconductor layer, a drain electrode electrically connected to the second GaN-based semiconductor layer, a gate electrode provided between the source electrode and the drain electrode, and a passivation film provided on the second GaN-based semiconductor layer between the source electrode and the gate electrode and between the gate electrode and the drain electrode, the passivation film including a first insulating film and a second insulating film, the first insulating film including nitrogen, the first insulating film having a thickness equal to or greater than 0.2 nm and less than 2 nm, the second insulating film including oxygen and provided on the first insulating film.
    Type: Grant
    Filed: January 12, 2016
    Date of Patent: September 22, 2020
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Hisashi Saito, Miki Yumoto
  • Patent number: 10714566
    Abstract: A semiconductor device includes: a first GaN based semiconductor layer; a second GaN based semiconductor layer disposed on the first layer and having a bandgap larger than that of the first layer; a first electrode disposed on the second layer; a second electrode disposed on the second layer; a p-type third GaN based semiconductor layer disposed between the first electrode and the second electrode on the second layer; a third electrode disposed on the third layer; a p-type fourth GaN based semiconductor layer disposed directly on the second layer and disposed separated from the third layer; a first insulating film disposed on the fourth layer; and a first field plate electrode disposed interposing the first insulating film in a space with the fourth layer, the first field plate electrode being separated from the fourth layer, and the first field plate electrode electrically connected to the first electrode.
    Type: Grant
    Filed: June 14, 2018
    Date of Patent: July 14, 2020
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Masahiko Kuraguchi, Hisashi Saito
  • Patent number: 10672882
    Abstract: A semiconductor device includes a semiconductor region, a gate electrode, and a first gate insulating film provided between the semiconductor region and the gate electrode and containing a material having a chemical composition expressed by (SiO2)n (Si3N4)m (wherein n and m are positive integers), in the material, at least one silicon atom being bonded with at least one oxygen atom and at least one nitrogen atom.
    Type: Grant
    Filed: February 27, 2019
    Date of Patent: June 2, 2020
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Tatsuo Shimizu, Hisashi Saito
  • Publication number: 20200101640
    Abstract: Provided is a kneading device 1 for dispersing a dispersoid in a dispersion medium. The kneading device includes a casing in which a kneading material containing the dispersion medium and the dispersoid is accommodated, a rotor disposed in the casing and kneading the kneading material while dispersing the dispersoid in the dispersion medium by rotating about a rotation axis, and a detection unit detecting a dispersion degree of the dispersoid into the dispersion medium by observing a state of the kneading material in the casing.
    Type: Application
    Filed: December 2, 2019
    Publication date: April 2, 2020
    Inventors: Hisashi Saito, Yoshihiko Nagata, Takamasa Kishima
  • Publication number: 20190289186
    Abstract: An imaging device includes: an imaging unit that creates a first image of a subject captured with a light emitting element not emitting light and a second image of the subject captured with the light emitting element emitting light; an image processor that creates a difference image being difference between the first image and the second image, and detects the subject according to the difference image; a luminance detector that detects luminance of the first image and luminance of the difference image; a target luminance setting unit that sets target luminance of the difference image according to the luminance of the first image detected by the luminance detector; and a sensitivity adjusting unit that adjusts imaging sensitivity of the imaging unit such that the luminance of the difference image detected by the luminance detector approaches the target luminance set by the target luminance setting unit.
    Type: Application
    Filed: March 13, 2019
    Publication date: September 19, 2019
    Applicants: OMRON AUTOMOTIVE ELECTRONICS CO., LTD., Omron Corporation
    Inventors: Hisashi Saito, Yoshio Matsuura
  • Patent number: 10373833
    Abstract: A semiconductor device of an embodiment includes a first GaN-based semiconductor layer, a second GaN-based semiconductor layer provided on the first GaN-based semiconductor layer and having a larger bandgap than the first GaN-based semiconductor layer, a source electrode provided on the second GaN-based semiconductor layer, a drain electrode provided on the second GaN-based semiconductor layer, a recess provided between the source electrode and the drain electrode in the second GaN-based semiconductor layer, a gate insulating film provided on a surface of the recess, and a gate electrode provided on the gate insulating film and having an end portion in a gate width direction, located in the recess.
    Type: Grant
    Filed: February 29, 2016
    Date of Patent: August 6, 2019
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Aya Shindome, Masahiko Kuraguchi, Hisashi Saito, Shigeto Fukatsu, Miki Yumoto, Yosuke Kajiwara
  • Patent number: 10347734
    Abstract: A semiconductor device includes a nitride semiconductor layer, a first electrode and second electrode on the nitride semiconductor layer, a gate electrode, and a gate insulating layer between the nitride semiconductor layer and the gate electrode. The gate insulating layer has a first oxide region containing at least any one element of aluminum and boron, gallium, and silicon. When a distance between the first end portion and the second end portion of the first oxide region is defined as d1, and a position separated by d1/10 from the first end portion toward the second end portion is defined as a first position, an atomic concentration of gallium at the first position is 80% or more and 120% or less of that of the at least any one element.
    Type: Grant
    Filed: February 6, 2018
    Date of Patent: July 9, 2019
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Tatsuo Shimizu, Hisashi Saito, Hiroshi Ono, Toshiya Yonehara
  • Publication number: 20190198634
    Abstract: A semiconductor device includes a semiconductor region, a gate electrode, and a first gate insulating film provided between the semiconductor region and the gate electrode and containing a material having a chemical composition expressed by (SiO2)n (Si3N4)m (wherein n and m are positive integers), in the material, at least one silicon atom being bonded with at least one oxygen atom and at least one nitrogen atom.
    Type: Application
    Filed: February 27, 2019
    Publication date: June 27, 2019
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Tatsuo SHIMIZU, Hisashi Saito
  • Patent number: 10319828
    Abstract: A semiconductor device according to an embodiment includes a semiconductor region, a gate electrode, and a first gate insulating film provided between the semiconductor region and the gate electrode and containing a material having a chemical composition expressed by (SiO2)n(Si3N4)m (where n and m are positive integers), in the material, at least one silicon atom being bonded with at least one oxygen atom and at least one nitrogen atom.
    Type: Grant
    Filed: April 26, 2018
    Date of Patent: June 11, 2019
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Tatsuo Shimizu, Hisashi Saito
  • Publication number: 20190144003
    Abstract: To alert a driver looking in one direction for a relatively long time when changing the vehicle traveling direction, an apparatus includes a data obtaining unit, which obtains sensing data, a gaze direction detector, which detects a driver gaze direction, a gaze direction determiner, which determines distracted driving based on whether the gaze direction deviates by at least a predetermined angle from a traveling direction, and the deviation continues for at least a predetermined allowable duration allowing distracted driving, an alert controller, which outputs a signal instructing to generate an alert, a traveling direction determiner, which detects a change in the traveling direction, and a duration changer, which shortens the allowable duration in response to an intersection being recognized and a change detected in the traveling direction.
    Type: Application
    Filed: September 27, 2018
    Publication date: May 16, 2019
    Applicant: OMRON Corporation
    Inventors: Tadashi HYUGA, Tomoyoshi AIZAWA, Hatsumi AOI, Yoshio MATSUURA, Masato TANAKA, Keisuke YOKOTA, Hisashi SAITO
  • Publication number: 20190143993
    Abstract: On a vehicle traveling on a downward slope, a driver's intentional checking is erroneously determined to be distracted driving, thus generating an alert. An apparatus includes an image data obtaining unit that obtains image data about a driver, a distracted driving determiner that determines distracted driving based on a face orientation and gaze of the driver captured in the image data and a determination criterion, a traveling state obtaining unit that obtains traveling state data about the vehicle, a traveling state determiner that determines whether the vehicle is traveling downward based on the traveling state data, and a criterion changer that changes, when the vehicle is determined to be traveling downward, the determination criterion for an upward face orientation and the gaze of the driver from a value used when the vehicle is determined not to be traveling downward.
    Type: Application
    Filed: September 27, 2018
    Publication date: May 16, 2019
    Applicant: OMRON Corporation
    Inventors: Hatsumi AOI, Tomoyoshi AIZAWA, Tadashi HYUGA, Yoshio MATSUURA, Masato TANAKA, Keisuke YOKOTA, Hisashi SAITO
  • Publication number: 20190147266
    Abstract: The accuracy is improved for distracted driving determination performed when the vehicle changes the traveling direction. A distracted driving determination apparatus includes a first obtaining unit that obtains first information indicating a gaze or a face orientation of a driver, a second obtaining unit that obtains second information indicating an operational state of a direction indicator, and a determiner that determines distracted driving by comparing the gaze or the face orientation indicated by the first information with a predetermined criterion indicating a direction or a duration that varies depending on the operational state indicated by the second information.
    Type: Application
    Filed: September 27, 2018
    Publication date: May 16, 2019
    Applicant: OMRON Corporation
    Inventors: Tomoyoshi AIZAWA, Tadashi HYUGA, Hatsumi AOI, Yoshio MATSUURA, Masato TANAKA, Keisuke YOKOTA, Hisashi SAITO
  • Publication number: 20190147273
    Abstract: An alert control apparatus includes a first obtaining unit that obtains first information about a gaze or face orientation of a driver, a distracted driving determiner that outputs a detection signal when detecting distracted driving, a second obtaining unit that obtains second information indicating whether an intersection is recognized, a third obtaining unit that obtains third information about a change in a vehicle traveling direction, an alert disabling unit that outputs a disabling signal disabling the detection signal in response to the intersection recognized and the traveling direction change detected, and an alert controller that outputs an instruction signal for an alert device to generate an alert in response to the detection signal output without the disabling signal, and outputs no instruction signal in response to the detection signal output with the disabling signal.
    Type: Application
    Filed: November 4, 2018
    Publication date: May 16, 2019
    Applicant: OMRON Corporation
    Inventors: Tadashi HYUGA, Tomoyoshi AIZAWA, Hatsumi AOI, Yoshio MATSUURA, Masato TANAKA, Keisuke YOKOTA, Hisashi SAITO
  • Publication number: 20190143892
    Abstract: An alert to distracted driving may adversely lower the attention of the driver. An alert control apparatus (300) includes data obtaining units (41 to 43) that obtain sensing data (a to j) from sensors (6 to 15), a railroad crossing recognizer (44) that recognizes a position of a railroad crossing relative to a vehicle based on the sensing data, and a crossing entry determiner (45) that determines whether the vehicle has entered the railroad crossing based on the sensing data, and an alert controller (48) that restricts generation of an alert to distracted driving from a distracted driving alert device (200) while the vehicle is passing the railroad crossing.
    Type: Application
    Filed: October 30, 2018
    Publication date: May 16, 2019
    Applicant: OMRON Corporation
    Inventors: Tadashi HYUGA, Tomoyoshi AIZAWA, Hatsumi AOI, Yoshio MATSUURA, Masato TANAKA, Keisuke YOKOTA, Hisashi SAITO
  • Publication number: 20190147269
    Abstract: An information processing apparatus whereby the detection accuracy of a face direction of a driver of a vehicle can be improved, comprises an image acquiring part for acquiring an image including a face of a driver of a vehicle, a detecting part for detecting a face direction of the driver in the image acquired by the image acquiring part, an information acquiring part for acquiring information concerning a traveling condition of the vehicle, a first deciding part for deciding whether the vehicle is in a specified traveling condition based on the information acquired by the information acquiring part, and a reference determining part for determining a reference of the face direction of the driver based on the face direction of the driver while the vehicle is decided to be in the specified traveling condition by the first deciding part.
    Type: Application
    Filed: November 1, 2018
    Publication date: May 16, 2019
    Applicant: OMRON Corporation
    Inventors: Hatsumi AOI, Tomoyoshi AIZAWA, Tadashi HYUGA, Yoshio MATSUURA, Masato TANAKA, Keisuke YOKOTA, Hisashi SAITO