Abstract: An alert to distracted driving may adversely lower the attention of the driver. An alert control apparatus (300) includes data obtaining units (41 to 43) that obtain sensing data (a to j) from sensors (6 to 15), a railroad crossing recognizer (44) that recognizes a position of a railroad crossing relative to a vehicle based on the sensing data, and a crossing entry determiner (45) that determines whether the vehicle has entered the railroad crossing based on the sensing data, and an alert controller (48) that restricts generation of an alert to distracted driving from a distracted driving alert device (200) while the vehicle is passing the railroad crossing.

Abstract: Distracted driving determination reflects changes in the traveling direction of the vehicle.

Abstract: The accuracy is improved for distracted driving determination performed when the vehicle changes the traveling direction. A distracted driving determination apparatus includes a first obtaining unit that obtains first information indicating a gaze or a face orientation of a driver, a second obtaining unit that obtains second information indicating an operational state of a direction indicator, and a determiner that determines distracted driving by comparing the gaze or the face orientation indicated by the first information with a predetermined criterion indicating a direction or a duration that varies depending on the operational state indicated by the second information.

Abstract: Distracted driving determination reflects changes in a vehicle traveling direction. A distracted driving determination apparatus includes a first obtaining unit that obtains first information indicating a driver's gaze or face orientation, a first determiner that determines whether the driver is engaging in distracted driving based on the gaze or face orientation indicated by the first information and a determination condition for detecting distracted driving, a second obtaining unit that obtains second information indicating a change in a traveling direction of a vehicle with respect to a straight traveling direction of the vehicle, a second determiner that determines whether the vehicle is traveling straight or traveling rightward or leftward based on the second information, and a condition changer that sets the determination condition to a first condition when the vehicle is traveling straight, and to a second condition different from the first condition when the vehicle is traveling rightward or leftward.

Abstract: An alert control apparatus includes a first obtaining unit that obtains first information about a gaze or face orientation of a driver, a distracted driving determiner that outputs a detection signal when detecting distracted driving, a second obtaining unit that obtains second information indicating whether an intersection is recognized, a third obtaining unit that obtains third information about a change in a vehicle traveling direction, an alert disabling unit that outputs a disabling signal disabling the detection signal in response to the intersection recognized and the traveling direction change detected, and an alert controller that outputs an instruction signal for an alert device to generate an alert in response to the detection signal output without the disabling signal, and outputs no instruction signal in response to the detection signal output with the disabling signal.

Abstract: An information processing apparatus whereby the detection accuracy of a visual line direction of a driver can be improved, comprises an image acquiring part for acquiring an image including a face of a driver of a vehicle, a detecting part for detecting a visual line direction of the driver in the image acquired by the image acquiring part, an accumulating part for accumulating detection results by the detecting part, and a reference determining part for determining a reference of the visual line direction for the driver, using the detection results accumulated in the accumulating part.

Abstract: To alert a driver looking in one direction for a relatively long time when changing the vehicle traveling direction, an apparatus includes a data obtaining unit, which obtains sensing data, a gaze direction detector, which detects a driver gaze direction, a gaze direction determiner, which determines distracted driving based on whether the gaze direction deviates by at least a predetermined angle from a traveling direction, and the deviation continues for at least a predetermined allowable duration allowing distracted driving, an alert controller, which outputs a signal instructing to generate an alert, a traveling direction determiner, which detects a change in the traveling direction, and a duration changer, which shortens the allowable duration in response to an intersection being recognized and a change detected in the traveling direction.

Abstract: On a vehicle traveling on a downward slope, a driver's intentional checking is erroneously determined to be distracted driving, thus generating an alert. An apparatus includes an image data obtaining unit that obtains image data about a driver, a distracted driving determiner that determines distracted driving based on a face orientation and gaze of the driver captured in the image data and a determination criterion, a traveling state obtaining unit that obtains traveling state data about the vehicle, a traveling state determiner that determines whether the vehicle is traveling downward based on the traveling state data, and a criterion changer that changes, when the vehicle is determined to be traveling downward, the determination criterion for an upward face orientation and the gaze of the driver from a value used when the vehicle is determined not to be traveling downward.

Abstract: A semiconductor device of an embodiment includes a nitride semiconductor layer, a first electrode provided on the nitride semiconductor layer, a second electrode provided on the nitride semiconductor layer, a third electrode provided above the nitride semiconductor layer, the third electrode provided between the first electrode and the second electrode, the third electrode containing a polycrystalline nitride semiconductor containing a p-type impurity, and a first insulating layer provided between the nitride semiconductor layer and the third electrode.

Abstract: According to one embodiment, a semiconductor device includes a first semiconductor layer including a nitride semiconductor, a first electrode separated from the first semiconductor layer in a first direction, and a first insulating film including silicon and oxygen and being provided between the first semiconductor layer and the first electrode. The first insulating film has a first thickness in the first direction. The first insulating film includes a first position, and a distance between the first position and the first semiconductor layer is ½ of the first thickness. A first hydrogen concentration of hydrogen at the first position is 2.5×1019 atoms/cm3 or less.

Abstract: A nitride semiconductor device includes a first semiconductor layer including a nitride semiconductor, a second semiconductor layer contacting the first semiconductor layer and including a nitride semiconductor, a source electrode, a drain electrode, a first gate electrode, a second gate electrode provided on an opposite side, a first insulating layer and a second insulating layer. The gate electrode has a protrusion portion inside the semiconductor layer. A distance between the first gate electrode and the protrusion portion of the second gate electrode is shorter than a distance between the source electrode and the second insulating layer, and shorter than a distance between the drain electrode and the second insulating layer.

Abstract: A semiconductor device includes a first nitride semiconductor layer containing Ga, a second nitride semiconductor layer provided on the first nitride semiconductor layer containing Ga, a first electrode and a second electrode provided on or above the first nitride semiconductor layer and electrically connected to the first nitride semiconductor layer, a gate electrode provided between the first electrode and the second electrode, a conductive layer provided on or above the second electrode, of which a first distance to the second electrode is smaller than a second distance between the second electrode and the gate electrode, and which is electrically connected to the first electrode or the gate electrode, a first aluminum oxide layer provided between the gate electrode and the second electrode and provided between the second nitride semiconductor layer and the conductive layer, a silicon oxide layer, and a second aluminum oxide layer.

Abstract: A semiconductor device includes a nitride semiconductor layer, a first electrode and second electrode on the nitride semiconductor layer, a gate electrode, and a gate insulating layer between the nitride semiconductor layer and the gate electrode. The gate insulating layer has a first oxide region containing at least any one element of aluminum and boron, gallium, and silicon. When a distance between the first end portion and the second end portion of the first oxide region is defined as d1, and a position separated by d1/10 from the first end portion toward the second end portion is defined as a first position, an atomic concentration of gallium at the first position is 80% or more and 120% or less of that of the at least any one element.

Abstract: A semiconductor device according to an embodiment includes: a substrate having a first plane and a second plane provided on the opposite side of the first plane; a first nitride semiconductor layer provided on the first plane; source electrodes provided on the first nitride semiconductor layer; drain electrodes provided on the first nitride semiconductor layer, each of the drain electrodes provided between the source electrodes; gate electrodes provided on the first nitride semiconductor layer, each of the gate electrodes provided between each of the source electrodes and each of the drain electrodes; a first wire provided on the second plane and electrically connected to the source electrodes; a second wire electrically connected to the drain electrodes; a third wire provided on the second plane and electrically connected to the gate electrodes; and an insulating interlayer provided between the first nitride semiconductor layer and the second wire.

Abstract: A semiconductor device includes: a first GaN based semiconductor layer; a second GaN based semiconductor layer disposed on the first layer and having a bandgap larger than that of the first layer; a first electrode disposed on the second layer; a second electrode disposed on the second layer; a p-type third GaN based semiconductor layer disposed between the first electrode and the second electrode on the second layer; a third electrode disposed on the third layer; a p-type fourth GaN based semiconductor layer disposed directly on the second layer and disposed separated from the third layer; a first insulating film disposed on the fourth layer; and a first field plate electrode disposed interposing the first insulating film in a space with the fourth layer, the first field plate electrode being separated from the fourth layer, and the first field plate electrode electrically connected to the first electrode.

Abstract: According to one embodiment, a semiconductor device includes a first element portion. The first element portion includes first and second semiconductor layers, first, second and third electrodes, and a first insulating layer. The first semiconductor layer includes Alx1Ga1-x1N (0?x1<1). The first electrode is separated from the first semiconductor layer. The first electrode includes a polycrystal of a nitride of one of Al or B. The second semiconductor layer includes Alx2Ga1-x2N (x1<x2<1). The second semiconductor layer includes first to third regions. The first region is positioned between the second and third regions. The first region is provided between the first semiconductor layer and the first electrode. The first insulating layer is provided between the first region and the first electrode. The second electrode is electrically connected to the second region. The third electrode is electrically connected to the third region.

Abstract: A nitride semiconductor device includes a first semiconductor layer including a nitride semiconductor, a second semiconductor layer contacting the first semiconductor layer and including a nitride semiconductor, a source electrode, a drain electrode, a first gate electrode, a second gate electrode provided on an opposite side, a first insulating layer and a second insulating layer. The gate electrode has a protrusion portion inside the semiconductor layer. A distance between the first gate electrode and the protrusion portion of the second gate electrode is shorter than a distance between the source electrode and the second insulating layer, and shorter than a distance between the drain electrode and the second insulating layer.

Abstract: A semiconductor device according to an embodiment includes a nitride semiconductor layer, an insulating layer provided on the nitride semiconductor layer, a first region provided in the nitride semiconductor layer, and a second region which is provided between the first region and the insulating layer in the nitride semiconductor layer and has a higher electric resistivity than the first region.

Abstract: According to one embodiment, a semiconductor device includes a first semiconductor layer including a nitride semiconductor, a first electrode separated from the first semiconductor layer in a first direction, and a first insulating film including silicon and oxygen and being provided between the first semiconductor layer and the first electrode. The first insulating film has a first thickness in the first direction. The first insulating film includes a first position, and a distance between the first position and the first semiconductor layer is ½ of the first thickness. A first hydrogen concentration of hydrogen at the first position is 2.5×1019 atoms/cm3 or less.

Abstract: A semiconductor device according to an embodiment includes a semiconductor region, a gate electrode, and a first gate insulating film provided between the semiconductor region and the gate electrode and containing a material having a chemical composition expressed by (SiO2)n(Si3N4)m (where n and m are positive integers), in the material, at least one silicon atom being bonded with at least one oxygen atom and at least one nitrogen atom.