Patents by Inventor Hisato Yabuta

Hisato Yabuta has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200346982
    Abstract: A material powder for additive modeling including a nitride, and a eutectic oxide, the nitride having an average density lower than an average density of the eutectic oxide, is used to produce a structure using an additive modeling method.
    Type: Application
    Filed: July 23, 2020
    Publication date: November 5, 2020
    Inventors: Nobuhiro Yasui, Hisato Yabuta, Kanako Oshima
  • Patent number: 10759712
    Abstract: A material powder for additive modeling including a nitride, and a eutectic oxide, the nitride having an average density lower than an average density of the eutectic oxide, is used to produce a structure using an additive modeling method.
    Type: Grant
    Filed: November 2, 2018
    Date of Patent: September 1, 2020
    Assignee: CANON KABUSHIKI KAISHA
    Inventors: Nobuhiro Yasui, Hisato Yabuta, Kanako Oshima
  • Publication number: 20200247005
    Abstract: A method of producing a ceramic manufactured object including (i) a step of leveling a ceramic powder to form a powder layer, (ii) a step of irradiating the powder layer with a laser beam based on three-dimensional data to crystallize an irradiated site, and (iii) performing the steps (i) and (ii) in repetition, wherein in the step (ii), a surface of the powder layer is irradiated with the laser beam in an unfocused state.
    Type: Application
    Filed: April 22, 2020
    Publication date: August 6, 2020
    Inventors: Nobuhiro Yasui, Kanako Oshima, Hisato Yabuta
  • Publication number: 20200247004
    Abstract: Provided is a method of producing a manufactured object including forming the manufactured object by performing, once or a plurality of times, a step of forming a powder layer from material powders containing powders of an inorganic compound and a step of irradiating a predetermined region of a surface of the powder layer with an energy beam and thereby fusing/solidifying the material powders. In the step of fusing/solidifying the material powders, an amorphous-rich region and a crystalline-rich region are formed separately by changing at least one of an output of the energy beam, a relative position between the surface of the powder layer and a focus of the energy beam, and a scanning rate.
    Type: Application
    Filed: April 22, 2020
    Publication date: August 6, 2020
    Inventors: Kanako Oshima, Hisato Yabuta, Nobuhiro Yasui
  • Patent number: 10727395
    Abstract: A piezoelectric material including a perovskite-type metal oxide represented by the following general formula (1); Bi; and Mn, wherein the content of Bi is 0.1-0.5 mol % with respect to 1 mol of the metal oxide, the content of Mn is 0.3-1.5 mol % with respect to 1 mol of the metal oxide, and the piezoelectric material satisfies (L4?L5)/L5?0.05 and (L8?L9)/L9?0.05 when the lengths of twelve Bi—O bonds with Bi that is located at a 12-fold site with respect to O in a perovskite-type unit cell as a starting point are taken to be L1 to L12 in length order: (Ba1-xM1x)(Ti1-yM2y)O3??(1) wherein 0?x?0.2, 0?y?0.1, and M1 and M2 are mutually different metal elements which have a total valence of +6 and are selected from other elements than Ba, Ti, Bi and Mn.
    Type: Grant
    Filed: June 16, 2017
    Date of Patent: July 28, 2020
    Assignee: CANON KABUSHIKI KAISHA
    Inventors: Hisato Yabuta, Toshihiro Ifuku, Takanori Matsuda, Takayuki Watanabe, Makoto Kubota, Tatsuo Furuta, Hidenori Tanaka
  • Patent number: 10714627
    Abstract: Provided is a bottom gate type thin film transistor including on a substrate (1) a gate electrode (2), a first insulating film (3) as a gate insulating film, an oxide semiconductor layer (4) as a channel layer, a second insulating film (5) as a protective layer, a source electrode (6), and a drain electrode (7), in which the oxide semiconductor layer (4) includes an oxide including at least one selected from the group consisting of In, Zn, and Sn, and the second insulating film (5) includes an amorphous oxide insulator formed so as to be in contact with the oxide semiconductor layer (4) and contains therein 3.8×1019 molecules/cm3 or more of a desorbed gas observed as oxygen by temperature programmed desorption mass spectrometry.
    Type: Grant
    Filed: January 17, 2018
    Date of Patent: July 14, 2020
    Assignee: CANON KABUSHIKI KAISHA
    Inventors: Ryo Hayashi, Nobuyuki Kaji, Hisato Yabuta
  • Publication number: 20200169190
    Abstract: Provided is a lead-free piezoelectric material reduced in dielectric loss tangent, and achieving both a large piezoelectric constant and a large mechanical quality factor. A piezoelectric material according to at least one embodiment of the present disclosure is a piezoelectric material including a main component formed of a perovskite-type metal oxide represented by the general formula (1): Nax+s(1?y)(BiwBa1?s?w)1?yNbyTi1?yO3 (where 0.84?x?0.92, 0.84?y?0.92, 0.002?(w+s)(1?y)?0.035, and 0.9?w/s?1.1), and a Mn component, wherein the content of the Mn is 0.01 mol % or more and 1.00 mol % or less with respect to the perovskite-type metal oxide.
    Type: Application
    Filed: January 29, 2020
    Publication date: May 28, 2020
    Inventors: Kanako Oshima, Miki Ueda, Takanori Matsuda, Makoto Kubota, Hisato Yabuta, Fumio Uchida, Hiroki Imai, Kenji Maeda, Chiemi Shimizu
  • Publication number: 20200169191
    Abstract: A piezoelectric material includes: an oxide containing Na, Ba, Nb, Ti, and Mn, in which the oxide has a perovskite-type structure, a total amount of metal elements other than Na, Ba, Nb, Ti, and Mn contained in the piezoelectric material is 0.5 mol % or less with respect to a total amount of Na, Ba, Nb, Ti, and Mn, a molar ratio x of Ti to a total molar amount of Nb and Ti is 0.05?x?0.12, a molar ratio y of Na to Nb is 0.93?y?0.98, a molar ratio z of Ba to Ti is 1.09?z?1.60, a molar ratio m of Mn to the total molar amount of Nb and Ti is 0.0006?m?0.0030, and 1.07?y×z?1.50 is satisfied.
    Type: Application
    Filed: January 29, 2020
    Publication date: May 28, 2020
    Inventors: Makoto Kubota, Kanako Oshima, Hisato Yabuta, Takanori Matsuda, Miki Ueda, Fumio Uchida, Hiroki Imai, Kenji Maeda, Chiemi Shimizu
  • Publication number: 20200169192
    Abstract: A lead-free piezoelectric material includes perovskite-type metal oxide containing Na, Nb, Ba, Ti, and Mg and indicates excellent piezoelectric properties. The piezoelectric material satisfies the following relational expression (1): 0.430?a?0.460, 0.433?b?0.479, 0.040?c?0.070, 0.0125?d?0.0650, 0.0015?e?0.0092, 0.9×3e?c?d?1.1×3e, a+b+c+d+e=1, where a, b, c, d, and e denote the relative numbers of Na, Nb, Ba, Ti, and Mg atoms, respectively.
    Type: Application
    Filed: January 29, 2020
    Publication date: May 28, 2020
    Inventors: Takanori Matsuda, Makoto Kubota, Hisato Yabuta, Miki Ueda, Kanako Oshima, Fumio Uchida, Hiroki Imai, Kenji Maeda, Chiemi Shimizu
  • Publication number: 20200140340
    Abstract: Provided are a powder for laser manufacturing which can be stably manufactured and from which a three-dimensional manufactured object ensuring a manufacturing accuracy can be obtained and a using method thereof. A powder for ceramic manufacturing for obtaining a manufactured object by repeatedly sintering or fusing and solidifying in sequence a powder in an irradiation portion with laser light, in which the powder includes a plurality of constituent materials, at least one constituent material of the constituent materials is an absorber that relatively strongly absorbs the laser light compared to other constituent materials, and at least a part of the absorber changes to a different constituent material that relatively weakly absorbs the laser light by irradiation with the laser light and a using method of a powder in which the powder is used.
    Type: Application
    Filed: January 7, 2020
    Publication date: May 7, 2020
    Inventors: Nobuhiro Yasui, Hisato Yabuta, Kanako Oshima, Hiroshi Saito, Yoshihiro Ohashi, Makoto Kubota, Akira Uebayashi
  • Patent number: 10593862
    Abstract: The present invention provides a lead-free piezoelectric material having a high piezoelectric constant over a wide operating temperature region. Therefore, the present invention relates to a piezoelectric material including a perovskite-type metal oxide represented by general formula (1) below as a main component, wherein the average valence, of Sn contained in the general formula (1) lies between 2 and 4. (BavCawSnxTiyZrz)O3 (where 0.620?v?0.970,0.010?w?0.200,0.030?x?0.230,0.865?y?0.990,0?z?0.085, and 1.986?v+w+x+y+z?2.
    Type: Grant
    Filed: December 11, 2014
    Date of Patent: March 17, 2020
    Assignee: Canon Kabushiki Kaisha
    Inventors: Makoto Kubota, Hisato Yabuta, Shunsuke Murakami, Kaoru Miura, Kanako Oshima
  • Publication number: 20190300441
    Abstract: Ceramic powder to be used for additive manufacturing of a ceramic object by irradiating the powder with laser light includes a first group of particles of a first inorganic compound showing an average particle diameter of not less than 10 ?m and not more than 100 ?m and a second group of particles of a second inorganic compound having an absorption band at the wavelength of the laser light and showing an average particle diameter smaller than the average particle diameter of the first group of particles. Particles belonging to the second group of particles are arranged on the surfaces of particles belonging to the first group of particles. A high-precision ceramic object can be obtained in a short time by using the ceramic powder.
    Type: Application
    Filed: March 27, 2019
    Publication date: October 3, 2019
    Inventors: Makoto Kubota, Nobuhiro Yasui, Hisato Yabuta, Kanako Oshima
  • Publication number: 20190134893
    Abstract: A powder for ceramic shaping to be used for obtaining a structure by repeating the execution of a process of sequential melting and solidification by irradiation of a laser beam contains inorganic compound particles and an organic compound, the organic compound being provided on the surfaces of the inorganic compound particles, and the organic compound has an absorption band that overlaps the wavelength of the laser beam.
    Type: Application
    Filed: November 2, 2018
    Publication date: May 9, 2019
    Inventors: Hisato Yabuta, Nobuhiro Yasui, Kanako Oshima, Akira Tsuboyama
  • Publication number: 20190135705
    Abstract: A material powder for additive modeling including a nitride, and a eutectic oxide, the nitride having an average density lower than an average density of the eutectic oxide, is used to produce a structure using an additive modeling method.
    Type: Application
    Filed: November 2, 2018
    Publication date: May 9, 2019
    Inventors: Nobuhiro Yasui, Hisato Yabuta, Kanako Oshima
  • Patent number: 10124558
    Abstract: Provided are a thermal expansion suppressing member having negative thermal expansion properties and a metal-based anti-thermally-expansive member having small thermal expansion. More specifically, provided are a thermal expansion suppressing member, including at least an oxide represented by the following general formula (1), and an anti-thermally-expansive member, including a metal having a positive linear expansion coefficient at 20° C., and a solid body including at least an oxide represented by the following general formula (1), the metal and solid being joined to each other: (Bi1-xMx)NiO3 (1) where M represents at least one metal selected from the group consisting of La, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Y, and In; and x represents a numerical value of 0.02?x?0.15.
    Type: Grant
    Filed: April 25, 2014
    Date of Patent: November 13, 2018
    Assignees: KYOTO UNIVERSITY, CANON KABUSHIKI KAISHA
    Inventors: Makoto Kubota, Kaoru Miura, Hisato Yabuta, Yoshihiko Matsumura, Yuichi Shimakawa, Masaki Azuma
  • Publication number: 20180145181
    Abstract: Provided is a bottom gate type thin film transistor including on a substrate (1) a gate electrode (2), a first insulating film (3) as a gate insulating film, an oxide semiconductor layer (4) as a channel layer, a second insulating film (5) as a protective layer, a source electrode (6), and a drain electrode (7), in which the oxide semiconductor layer (4) includes an oxide including at least one selected from the group consisting of In, Zn, and Sn, and the second insulating film (5) includes an amorphous oxide insulator formed so as to be in contact with the oxide semiconductor layer (4) and contains therein 3.8×1019 molecules/cm3 or more of a desorbed gas observed as oxygen by temperature programmed desorption mass spectrometry.
    Type: Application
    Filed: January 17, 2018
    Publication date: May 24, 2018
    Inventors: Ryo Hayashi, Nobuyuki Kaji, Hisato Yabuta
  • Patent number: 9905699
    Abstract: Provided is a bottom gate type thin film transistor including on a substrate (1) a gate electrode (2), a first insulating film (3) as a gate insulating film, an oxide semiconductor layer (4) as a channel layer, a second insulating film (5) as a protective layer, a source electrode (6), and a drain electrode (7), in which the oxide semiconductor layer (4) includes an oxide including at least one selected from the group consisting of In, Zn, and Sn, and the second insulating film (5) includes an amorphous oxide insulator formed so as to be in contact with the oxide semiconductor layer (4) and contains therein 3.8×1019 molecules/cm3 or more of a desorbed gas observed as oxygen by temperature programmed desorption mass spectrometry.
    Type: Grant
    Filed: November 26, 2014
    Date of Patent: February 27, 2018
    Assignee: CANON KABUSHIKI KAISHA
    Inventors: Ryo Hayashi, Nobuyuki Kaji, Hisato Yabuta
  • Publication number: 20170373244
    Abstract: A piezoelectric material including a perovskite-type metal oxide represented by the following general formula (1); Bi; and Mn, wherein the content of Bi is 0.1-0.5 mol % with respect to 1 mol of the metal oxide, the content of Mn is 0.3-1.5 mol % with respect to 1 mol of the metal oxide, and the piezoelectric material satisfies (L4?L5)/L5?0.05 and (L8?L9)/L9?0.05 when the lengths of twelve Bi—O bonds with Bi that is located at a 12-fold site with respect to O in a perovskite-type unit cell as a starting point are taken to be L1 to L12 in length order: (Ba1-xM1x)(Ti1-yM2y)O3??(1) wherein 0?x?0.2, 0?y?0.1, and M1 and M2 are mutually different metal elements which have a total valence of +6 and are selected from other elements than Ba, Ti, Bi and Mn.
    Type: Application
    Filed: June 16, 2017
    Publication date: December 28, 2017
    Inventors: Hisato Yabuta, Toshihiro Ifuku, Takanori Matsuda, Takayuki Watanabe, Makoto Kubota, Tatsuo Furuta, Hidenori Tanaka
  • Patent number: 9722170
    Abstract: There is provided a piezoelectric material not containing any lead component, having stable piezoelectric characteristics in an operating temperature range, a high mechanical quality factor, and satisfactory piezoelectric characteristics. The piezoelectric material includes a main component containing a perovskite-type metal oxide that can be expressed using the following general formula (1), and subcomponents containing Mn, Li, and Bi. When the metal oxide is 100 parts by weight, the content of Mn on a metal basis is not less than 0.04 parts by weight and is not greater than 0.36 parts by weight, content ? of Li on a metal basis is not less than 0.0013 parts by weight and is not greater than 0.0280 parts by weight, and content ? of Bi on a metal basis is not less than 0.042 parts by weight and is not greater than 0.850 parts by weight (Ba1-xCax)a(Ti1-y-zZrySnz)O3??(1) (in the formula (1), 0.09?x?0.30, 0.074<y?0.085, 0?z?0.02, and 0.986?a?1.02).
    Type: Grant
    Filed: July 10, 2014
    Date of Patent: August 1, 2017
    Assignee: Canon Kabushiki Kaisha
    Inventors: Takayuki Watanabe, Hidenori Tanaka, Shunsuke Murakami, Tatsuo Furuta, Hisato Yabuta
  • Publication number: 20160315245
    Abstract: The present invention provides a lead-free piezoelectric material having a high piezoelectric constant over a wide operating temperature region. Therefore, the present invention relates to a piezoelectric material including a perovskite-type metal oxide represented by general formula (1) below as a main component, wherein the average valence, of Sn contained in the general formula (1) lies between 2 and 4. (BavCawSnxTiyZrz)O3 (where 0.620?v?0.970, 0.010?w?0.200, 0.030?x?0.230, 0.865?y?0.990, 0?z?0.085, and 1.986?v+w+x+y+z?2.
    Type: Application
    Filed: December 11, 2014
    Publication date: October 27, 2016
    Inventors: Makoto Kubota, Hisato Yabuta, Shunsuke Murakami, Kaoru Miura, Kanako Oshima