Abstract: A piezoelectric material including a perovskite-type metal oxide represented by the following general formula (1); Bi; and Mn, wherein the content of Bi is 0.1-0.5 mol % with respect to 1 mol of the metal oxide, the content of Mn is 0.3-1.5 mol % with respect to 1 mol of the metal oxide, and the piezoelectric material satisfies (L4?L5)/L5?0.05 and (L8?L9)/L9?0.05 when the lengths of twelve Bi—O bonds with Bi that is located at a 12-fold site with respect to O in a perovskite-type unit cell as a starting point are taken to be L1 to L12 in length order: (Ba1-xM1x)(Ti1-yM2y)O3??(1) wherein 0?x?0.2, 0?y?0.1, and M1 and M2 are mutually different metal elements which have a total valence of +6 and are selected from other elements than Ba, Ti, Bi and Mn.

Abstract: Provided is a bottom gate type thin film transistor including on a substrate (1) a gate electrode (2), a first insulating film (3) as a gate insulating film, an oxide semiconductor layer (4) as a channel layer, a second insulating film (5) as a protective layer, a source electrode (6), and a drain electrode (7), in which the oxide semiconductor layer (4) includes an oxide including at least one selected from the group consisting of In, Zn, and Sn, and the second insulating film (5) includes an amorphous oxide insulator formed so as to be in contact with the oxide semiconductor layer (4) and contains therein 3.8×1019 molecules/cm3 or more of a desorbed gas observed as oxygen by temperature programmed desorption mass spectrometry.

Abstract: Provided is a lead-free piezoelectric material reduced in dielectric loss tangent, and achieving both a large piezoelectric constant and a large mechanical quality factor. A piezoelectric material according to at least one embodiment of the present disclosure is a piezoelectric material including a main component formed of a perovskite-type metal oxide represented by the general formula (1): Nax+s(1?y)(BiwBa1?s?w)1?yNbyTi1?yO3 (where 0.84?x?0.92, 0.84?y?0.92, 0.002?(w+s)(1?y)?0.035, and 0.9?w/s?1.1), and a Mn component, wherein the content of the Mn is 0.01 mol % or more and 1.00 mol % or less with respect to the perovskite-type metal oxide.

Abstract: A lead-free piezoelectric material includes perovskite-type metal oxide containing Na, Nb, Ba, Ti, and Mg and indicates excellent piezoelectric properties. The piezoelectric material satisfies the following relational expression (1): 0.430?a?0.460, 0.433?b?0.479, 0.040?c?0.070, 0.0125?d?0.0650, 0.0015?e?0.0092, 0.9×3e?c?d?1.1×3e, a+b+c+d+e=1, where a, b, c, d, and e denote the relative numbers of Na, Nb, Ba, Ti, and Mg atoms, respectively.

Abstract: A piezoelectric material includes: an oxide containing Na, Ba, Nb, Ti, and Mn, in which the oxide has a perovskite-type structure, a total amount of metal elements other than Na, Ba, Nb, Ti, and Mn contained in the piezoelectric material is 0.5 mol % or less with respect to a total amount of Na, Ba, Nb, Ti, and Mn, a molar ratio x of Ti to a total molar amount of Nb and Ti is 0.05?x?0.12, a molar ratio y of Na to Nb is 0.93?y?0.98, a molar ratio z of Ba to Ti is 1.09?z?1.60, a molar ratio m of Mn to the total molar amount of Nb and Ti is 0.0006?m?0.0030, and 1.07?y×z?1.50 is satisfied.

Abstract: Provided are a powder for laser manufacturing which can be stably manufactured and from which a three-dimensional manufactured object ensuring a manufacturing accuracy can be obtained and a using method thereof. A powder for ceramic manufacturing for obtaining a manufactured object by repeatedly sintering or fusing and solidifying in sequence a powder in an irradiation portion with laser light, in which the powder includes a plurality of constituent materials, at least one constituent material of the constituent materials is an absorber that relatively strongly absorbs the laser light compared to other constituent materials, and at least a part of the absorber changes to a different constituent material that relatively weakly absorbs the laser light by irradiation with the laser light and a using method of a powder in which the powder is used.

Abstract: The present invention provides a lead-free piezoelectric material having a high piezoelectric constant over a wide operating temperature region. Therefore, the present invention relates to a piezoelectric material including a perovskite-type metal oxide represented by general formula (1) below as a main component, wherein the average valence, of Sn contained in the general formula (1) lies between 2 and 4. (BavCawSnxTiyZrz)O3 (where 0.620?v?0.970,0.010?w?0.200,0.030?x?0.230,0.865?y?0.990,0?z?0.085, and 1.986?v+w+x+y+z?2.

Abstract: Ceramic powder to be used for additive manufacturing of a ceramic object by irradiating the powder with laser light includes a first group of particles of a first inorganic compound showing an average particle diameter of not less than 10 ?m and not more than 100 ?m and a second group of particles of a second inorganic compound having an absorption band at the wavelength of the laser light and showing an average particle diameter smaller than the average particle diameter of the first group of particles. Particles belonging to the second group of particles are arranged on the surfaces of particles belonging to the first group of particles. A high-precision ceramic object can be obtained in a short time by using the ceramic powder.

Abstract: A powder for ceramic shaping to be used for obtaining a structure by repeating the execution of a process of sequential melting and solidification by irradiation of a laser beam contains inorganic compound particles and an organic compound, the organic compound being provided on the surfaces of the inorganic compound particles, and the organic compound has an absorption band that overlaps the wavelength of the laser beam.

Abstract: A material powder for additive modeling including a nitride, and a eutectic oxide, the nitride having an average density lower than an average density of the eutectic oxide, is used to produce a structure using an additive modeling method.

Abstract: Provided are a thermal expansion suppressing member having negative thermal expansion properties and a metal-based anti-thermally-expansive member having small thermal expansion. More specifically, provided are a thermal expansion suppressing member, including at least an oxide represented by the following general formula (1), and an anti-thermally-expansive member, including a metal having a positive linear expansion coefficient at 20° C., and a solid body including at least an oxide represented by the following general formula (1), the metal and solid being joined to each other: (Bi1-xMx)NiO3 (1) where M represents at least one metal selected from the group consisting of La, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Y, and In; and x represents a numerical value of 0.02?x?0.15.

Abstract: Provided is a bottom gate type thin film transistor including on a substrate (1) a gate electrode (2), a first insulating film (3) as a gate insulating film, an oxide semiconductor layer (4) as a channel layer, a second insulating film (5) as a protective layer, a source electrode (6), and a drain electrode (7), in which the oxide semiconductor layer (4) includes an oxide including at least one selected from the group consisting of In, Zn, and Sn, and the second insulating film (5) includes an amorphous oxide insulator formed so as to be in contact with the oxide semiconductor layer (4) and contains therein 3.8×1019 molecules/cm3 or more of a desorbed gas observed as oxygen by temperature programmed desorption mass spectrometry.

Abstract: Provided is a bottom gate type thin film transistor including on a substrate (1) a gate electrode (2), a first insulating film (3) as a gate insulating film, an oxide semiconductor layer (4) as a channel layer, a second insulating film (5) as a protective layer, a source electrode (6), and a drain electrode (7), in which the oxide semiconductor layer (4) includes an oxide including at least one selected from the group consisting of In, Zn, and Sn, and the second insulating film (5) includes an amorphous oxide insulator formed so as to be in contact with the oxide semiconductor layer (4) and contains therein 3.8×1019 molecules/cm3 or more of a desorbed gas observed as oxygen by temperature programmed desorption mass spectrometry.

Abstract: A piezoelectric material including a perovskite-type metal oxide represented by the following general formula (1); Bi; and Mn, wherein the content of Bi is 0.1-0.5 mol % with respect to 1 mol of the metal oxide, the content of Mn is 0.3-1.5 mol % with respect to 1 mol of the metal oxide, and the piezoelectric material satisfies (L4?L5)/L5?0.05 and (L8?L9)/L9?0.05 when the lengths of twelve Bi—O bonds with Bi that is located at a 12-fold site with respect to O in a perovskite-type unit cell as a starting point are taken to be L1 to L12 in length order: (Ba1-xM1x)(Ti1-yM2y)O3??(1) wherein 0?x?0.2, 0?y?0.1, and M1 and M2 are mutually different metal elements which have a total valence of +6 and are selected from other elements than Ba, Ti, Bi and Mn.

Abstract: There is provided a piezoelectric material not containing any lead component, having stable piezoelectric characteristics in an operating temperature range, a high mechanical quality factor, and satisfactory piezoelectric characteristics. The piezoelectric material includes a main component containing a perovskite-type metal oxide that can be expressed using the following general formula (1), and subcomponents containing Mn, Li, and Bi. When the metal oxide is 100 parts by weight, the content of Mn on a metal basis is not less than 0.04 parts by weight and is not greater than 0.36 parts by weight, content ? of Li on a metal basis is not less than 0.0013 parts by weight and is not greater than 0.0280 parts by weight, and content ? of Bi on a metal basis is not less than 0.042 parts by weight and is not greater than 0.850 parts by weight (Ba1-xCax)a(Ti1-y-zZrySnz)O3??(1) (in the formula (1), 0.09?x?0.30, 0.074<y?0.085, 0?z?0.02, and 0.986?a?1.02).

Abstract: The present invention provides a lead-free piezoelectric material having a high piezoelectric constant over a wide operating temperature region. Therefore, the present invention relates to a piezoelectric material including a perovskite-type metal oxide represented by general formula (1) below as a main component, wherein the average valence, of Sn contained in the general formula (1) lies between 2 and 4. (BavCawSnxTiyZrz)O3 (where 0.620?v?0.970, 0.010?w?0.200, 0.030?x?0.230, 0.865?y?0.990, 0?z?0.085, and 1.986?v+w+x+y+z?2.

Abstract: Provided is a piezoelectric material that achieves both high piezoelectric performance and high Curie temperature. In addition, provided are a piezoelectric element, a liquid discharge head, an ultrasonic motor, and a dust removing device, which use the piezoelectric material. The piezoelectric material includes a perovskite-type metal oxide that is expressed by the following general formula (1): xBaTiO3-yBiFeO3-zBi(M0.5Ti0.5)O3 (1), where M represents at least one type of element selected from the group consisting of Mg and Ni, x satisfies 0.25?x?0.75, y satisfies 0.15?y?0.70, z satisfies 0.05?z?0.60, and x+y+z=1 is satisfied.

Abstract: There is provided a piezoelectric material not containing any lead component, having stable piezoelectric characteristics in an operating temperature range, a high mechanical quality factor, and satisfactory piezoelectric characteristics. The piezoelectric material according to the present invention includes a main component containing a perovskite-type metal oxide that can be expressed using the following general formula (1), and subcomponents containing Mn, Li, and Bi. When the metal oxide is 100 parts by weight, the content of Mn on a metal basis is not less than 0.04 parts by weight and is not greater than 0.36 parts by weight, content ? of Li on a metal basis is equal to or less than 0.0012 parts by weight (including 0 parts by weight), and content ? of Bi on a metal basis is not less than 0.042 parts by weight and is not greater than 0.850 parts by weight (Ba1-xCax)a(Ti1-y-zZrySnz)O3??(1) (in the formula (1), 0.09?x?0.30, 0.025?y?0.085, 0?z?0.02, and 0.986?a?1.02).

Abstract: There is provided a piezoelectric ceramic having a high and stable piezoelectric constant and a high and stable mechanical quality factor in a wide operating temperature range, and a piezoelectric element according to the present invention includes a main component containing a perovskite type metal oxide having the following general formula (1) or (2); and Mn as a first auxiliary component, (Ba1-xCax)a(Ti1-y-zSnyZrz)O3??(1) (0.08?x?0.20, 0.01?y?0.04, 0<z?0.04) (Ba1-xCax)a(Ti1-ySny)O3??(2) (0.08?x?0.20, 0.01?y?0.04) wherein the amount b (mol) of Mn per mole of the metal oxide is in the range of 0.0048?b?0.0400, and the value a of the general formula (1) or (2) is in the range of 0.9925+b?a?1.0025+b.

Abstract: There is provided a piezoelectric material not containing any lead component, having stable piezoelectric characteristics in an operating temperature range, a high mechanical quality factor, and satisfactory piezoelectric characteristics. The piezoelectric material according to the present invention includes a main component containing a perovskite-type metal oxide that can be expressed using the following general formula (1), and subcomponents containing Mn, Li, and Bi. When the metal oxide is 100 parts by weight, the content of Mn on a metal basis is not less than 0.04 parts by weight and is not greater than 0.36 parts by weight, content ? of Li on a metal basis is equal to or less than 0.0012 parts by weight (including 0 parts by weight), and content ? of Bi on a metal basis is not less than 0.042 parts by weight and is not greater than 0.850 parts by weight (Ba1-xCax)a(Ti1-y-zZrySnz)O3??(1) (in the formula (1), 0.09?x?0.30, 0.025?y?0.085, 0?z?0.02, and 0.986?a?1.02).