Abstract: A surface treatment composition of the present invention contains a first surfactant, a second surfactant, a basic compound, and water. The surface treatment composition has a pH of 8 or more. The second surfactant has a weight-average molecular weight one-half or less that of the first surfactant. The sum of the content of the first surfactant and the content of the second surfactant is 0.00001 to 0.1% by mass.

Abstract: An efficient polishing method for polishing an alloy material to have an excellent mirror surface is provided. The alloy material contains a main component and 0.1% by mass or more of an element that has a Vickers hardness (HV) different from the Vickers hardness of the main component by 5 or more. A polishing composition used in the polishing method contains abrasive grains and an oxidant. The alloy material is preferably an aluminum alloy, a titanium alloy, a stainless steel, a nickel alloy, or a copper alloy. It is also preferable that the alloy material is subjected to preliminary polishing before being subjected to polishing in which the polishing composition is used.

Abstract: A polishing composition containing at least water and silica and satisfying all of the following conditions (a) through (d) is provided. Condition (a) The specific surface area of the silica contained in the polishing composition is 30 m2/g or more. Condition (b) Silica having a particle size of 10 to 50 nm is contained in the amount of 2% by mass or more. Condition (c) Silica having a particle size of 60 to 300 nm is contained in the amount of 2% by mass or more. Condition (d) The value obtained by dividing the average particle size of the silica specified in the condition (c) by the average particle size of the silica specified in the condition (b) is 2 or more.

Abstract: Disclosed is a polishing composition that contains at least abrasive grains, an oxidizing agent having a redox potential equal to or greater than 1.8 V at a pH for application of polishing, and water. The abrasive grains are preferably composed of at least one substance selected from among silicon oxide, aluminum oxide, cerium oxide, zirconium oxide, titanium oxide, manganese oxide, silicon carbide, and silicon nitride. The oxidizing agent is preferably composed of at least one substance selected from among sodium persulfate, potassium persulfate, and ammonium persulfate. The polishing composition preferably has a pH equal to or less than 3.

Abstract: A polishing composition contains at least abrasive grains and water and is used in polishing an object to be polished. The abrasive grains are selected so as to satisfy the relationship X1×Y1?0 and the relationship X2×Y2>0, where X1 [mV] represents the zeta potential of the abrasive grains measured during polishing of the object by using the polishing composition, Y1 [mV] represents the zeta potential of the object measured during polishing of the object by using the polishing composition, X2 [mV] represents the zeta potential of the abrasive grains measured during washing of the object after polishing, and Y2 [mV] represents the zeta potential of the object measured during washing of the object after polishing. The abrasive grains are preferably of silicon oxide, aluminum oxide, cerium oxide, zirconium oxide, silicon carbide, or diamond. The object is preferably of a nickel-containing alloy, silicon oxide, or aluminum oxide.

Abstract: Provided is a polishing composition containing an abrasive and water. The abrasive content in the polishing composition is no less than 0.1% by mass. The abrasive contains zirconium oxide particles. The zirconium oxide particles have a specific surface area of from 1 to 15 m2/g. The zirconium oxide particles preferably have a purity of no less than 99% by mass. The polishing composition is used in, for example, polishing a hard and brittle material, such as sapphire, silicon nitride, silicon carbide, silicon oxide, glass, gallium nitride, gallium arsenide, indium arsenide, and indium phosphide.

Abstract: To provide a wetting agent for semiconductors and a polishing composition whereby the wettability of a semiconductor substrate surface can be improved, and microdefects such as particle attachments can be remarkably reduced. A wetting agent for semiconductors, comprising a water soluble polymer compound having a low viscosity and water, and a polishing composition. A 0.3 wt % aqueous solution of the water soluble polymer compound has a viscosity of less than 10 mPa·s at 25° C.

Abstract: A polishing composition contains colloidal silica. The colloidal silica satisfies the expression A×D×E×F?350,000 where “A” denotes the average aspect ratio (dimensionless) of the colloidal silica, “D” denotes the average particle diameter (units: nm) of the colloidal silica, “E” denotes the standard deviation of the particle size (units: nm) of the colloidal silica, and “F” denotes the volume fraction (units: %) of particles having a diameter of 1 to 300 nm in the colloidal silica. The volume fraction of particles having a diameter of 1 to 300 nm in the colloidal silica is 90% or greater.

Abstract: A polishing composition contains colloidal silica particles having protrusions on the surfaces thereof. The average of values respectively obtained by dividing the height of a protrusion on the surface of each particle belonging to the part of the colloidal silica particles that has larger particle diameters than the volume average particle diameter of the colloidal silica particles by the width of a base portion of the same protrusion is no less than 0.245. Preferably, the part of the colloidal silica particles that has larger particle diameter than the volume average particle diameter of the colloidal silica particles has an average aspect ratio of no less than 1.15. Preferably, the protrusions on the surfaces of particles belonging to the part of the colloidal silica particles that has larger particle diameters than the volume average particle diameter of the colloidal silica particles have an average height of no less than 3.5 nm.

Abstract: A surface treatment composition of the present invention contains a first surfactant, a second surfactant, a basic compound, and water. The surface treatment composition has a pH of 8 or more. The second surfactant has a weight-average molecular weight one-half or less that of the first surfactant. The sum of the content of the first surfactant and the content of the second surfactant is 0.00001 to 0.1% by mass.

Abstract: Disclosed is a filtration method that extends filter life and achieves high filtration efficiency, and also abrasive slurry produced by the method. In this filtration method, deaired solvent is passed through a filter before a non-deaired liquid is filtered by the filter, after which the filter is used for filtering.

Abstract: Surface treatment is performed with a liquid, while shielding a semiconductor surface from light. When the method is employed for surface treatment in wet processes such as cleaning, etching and development of the semiconductor surface, increase of surface microroughness can be reduced. Thus, electrical characteristics and yield of the semiconductor device are improved.

Abstract: Provided is a polishing composition used for polishing a semiconductor wafer surface having a step in order to planarize the wafer surface and thereby reclaiming the semiconductor wafer. The polishing composition contains at least a step eliminating agent, which is adsorbed to the surface of the semiconductor wafer and acts to prevent etching of bottom portion of the step on the wafer surface during polishing. The step eliminating agent is, for example, a water-soluble polymer or a surfactant, and more specifically, a polyvinyl alcohol, a polyvinyl pyrrolidone, a polyethylene glycol, a cellulose, a carboxylic acid surfactant, a sulfonic acid surfactant, a phosphate ester surfactant, or an oxyalkylene polymer.

Abstract: A metal oxide film suitable for protection of metals, composed mainly of aluminum. A metal oxide film includes a film of an oxide of a metal composed mainly of aluminum, having a thickness of 10 nm or greater, and exhibiting a moisture release rate from the film of 1E18 mol./cm2 or less. Further, there is provided a process for producing a metal oxide film, wherein a metal composed mainly of aluminum is subjected to anodic oxidation in a chemical solution of 4 to 10 pH value so as to obtain a metal oxide film.

Abstract: Surface treatment is performed with a liquid, while shielding a semiconductor surface from light. When the method is employed for surface treatment in wet processes such as cleaning, etching and development of the semiconductor surface, increase of surface microroughness can be reduced. Thus, electrical characteristics and yield of the semiconductor device are improved.

Abstract: A method for producing boehmite particles includes subjecting powder of aluminum hydroxide to hydrothermal reaction together with a nucleation agent, thereby obtaining boehmite particles having an average primary particle size of 0.6 ?m or less and including primary particles each having a hexahedral shape. A method for producing alumina particles includes: drying the boehmite particles produced by the above described method; calcining the boehmite particles, which have been dried, to obtain alumina particles; and disintegrating the obtained alumina particles.

Abstract: A metal oxide film suitable for protection of metals, composed mainly of aluminum. A metal oxide film includes a film of an oxide of a metal composed mainly of aluminum, having a thickness of 10 nm or greater, and exhibiting a moisture release rate from the film of 1E18 mol./cm2 or less. Further, there is provided a process for producing a metal oxide film, wherein a metal composed mainly of aluminum is subjected to anodic oxidation in a chemical solution of 4 to 10 pH value so as to obtain a metal oxide film.

Abstract: A polishing composition contains at least abrasive grains and water and is used in polishing an object to be polished. The abrasive grains are selected so as to satisfy the relationship X1×Y1?0 and the relationship X2×Y2>0, where X1 [mV] represents the zeta potential of the abrasive grains measured during polishing of the object by using the polishing composition, Y1 [mV] represents the zeta potential of the object measured during polishing of the object by using the polishing composition, X2 [mV] represents the zeta potential of the abrasive grains measured during washing of the object after polishing, and Y2 [mV] represents the zeta potential of the object measured during washing of the object after polishing. The abrasive grains are preferably of silicon oxide, aluminum oxide, cerium oxide, zirconium oxide, silicon carbide, or diamond. The object is preferably of a nickel-containing alloy, silicon oxide, or aluminum oxide.

Abstract: A protective film structure of a metal member for use in an apparatus for manufacturing a semiconductor or the like, the protective film structure including a first coating layer of faultless aluminum oxide formed by direct anodic oxidation of a base-material metal of an aluminum alloy; and a second coating layer formed on the first coating layer and made of yttrium oxide by a plasma spraying method.

Abstract: Aluminum oxide particles are provided that include primary particles each having a hexahedral shape and an aspect ratio of 1 to 5. The aluminum oxide particles preferably have an average primary particle size of 0.01 to 0.6 ?m. The aluminum oxide particles preferably have an alpha conversion rate of 5 to 70%. Further, the aluminum oxide particles preferably have an average secondary particle size of 0.01 to 2 ?m, and the value obtained by dividing the 90% particle size of the aluminum oxide particles by the 10% particle size of the aluminum oxide particles is preferably 3 or less. The aluminum oxide particles are used, for example, as abrasive grains in the applications of polishing semiconductor device substrates, hard disk substrates, or display substrates.