Abstract: The projector device can be reduced in thickness by using a total internal reflection (TIR) prism wherein the angle formed between a line of projection of the normal vector of the total reflection plane on the surface of a digital micromirror device (DMD) and the long or short side of the DMD is set to be smaller than 45°. The TIR prism has a total reflection plane for totally reflecting illuminating light brought to incidence by an illuminating optical system to guide it to the DMD and totally transmit light optically modulated by the DMD to guide it to a projecting optical system, and this total reflection plane is so arranged relative to the DMD that the angle formed between a line of projection of its normal vector on the surface of the DMD and the long side of the DMD form an angle smaller than 45°.

Abstract: An image producing apparatus includes a power control circuit for reducing power fed to an output amplifier of a CCD during exposure of the CCD and restoring the power fed to the output amplifier to the level before reduction in a predetermined time period before an image signal produced by the CCD is transferred, and an offset corrector for correcting offset of the output amplifier based on an output signal output from the output amplifier after restoration of the power fed to the output amplifier and before the transfer of image signal. According to the thus constituted image producing apparatus, it is possible to reduce a noise caused by heat generated by the CCD even when it is exposed for a long time and can read out an image at high speed.

Abstract: In a measuring method utilizing the phenomenon of attenuation in total internal reflection in which a light beam is caused to enter a dielectric block provided with a film layer to be brought into contact with a sample so that total internal reflection conditions are satisfied at the interface of the dielectric block and the film layer and various angles of incidence of the light beam to the interface of the dielectric block and the film layer can be obtained, and the intensity of the light beam reflected in total internal reflection at the interface is detected, the light beam is caused to intermittently impinge upon the dielectric block.

Abstract: A state of attenuation in total internal reflection is detected by the use of a measuring apparatus having a measuring unit and a reference unit and a measuring system which corrects result of detection by the measuring unit on the basis of result of detection by the reference unit and measures the change of a state of attenuation in total internal reflection on the basis of the corrected result of detection by the measuring unit. The difference in sensitivity between the measuring unit and the reference unit is detected before initiating the measurement of the change of a state of attenuation in total internal reflection, and result of measurement by the measuring system is calibrated on the basis of the difference in sensitivity between the measuring unit and the reference unit.

Abstract: A semiconductor laser diode has a GaAs substrate and a resonant cavity formed on the GaAs substrate. The resonant cavity includes a QW structure having a GaInAsN well layer and a AlGaAs or GaInAsP barrier layers. Specific combination of the indium content and the nitrogen content in the well layer alone or in combination with the specific composition of the barrier layers provides a long-term operation at a higher output power.

Abstract: A semiconductor laser device includes a resonant cavity formed on a GaAs substrate, the resonant cavity including a quantum well (QW) active layer structure having a GaInNAs(Sb) well layer and a pair of barrier layers. The QW structure has a conduction band offset energy (&Dgr;Ec) equal to or higher than 350 milli-electron-volts (meV) between the well layer and the barrier layers, and each of the barrier layers a tensile strain equal to or lower than 2.5%.

Abstract: A surface emitting semiconductor laser device including a substrate and a layer structure formed thereon, the layer structure including an active layer, p-type and n-type distributed Bragg reflector (DBR) sandwiching therebetween the active layer, and first and second selectively-oxidized layers disposed within or in vicinities of the p-type and n-type DBRs, respectively, each of the p-type and n-type DBRs including a plurality of layer pairs each including a lower reflection layer and a higher reflection layer, each of the selectively-oxidized layers including a central AlxGa1-xAs area (x≧0.98) and a peripheral oxide area formed by oxidizing an outer periphery of the central AlxGa1-xAs area, the peripheral oxide area of the first selectively-oxidized layers has a width smaller than a width of the peripheral oxide area of the second selectively-oxidized layer.

Abstract: A biochemical analysis unit is obtained, which comprises a base plate having spot-shaped regions and has identification information, specific binding substances having been fixed respectively to the spot-shaped regions. A labeled organism-originating substance having identification information is subjected to specific binding to the specific binding substances. A label signal corresponding to a position of the spot-shaped region having thus been labeled selectively is read out to form data for a biochemical analysis. The identification information of the biochemical analysis unit and the identification information of the organism-originating substance are acquired and fed into an analysis apparatus, such that the correspondence relationship between the two pieces of the identification information is clear.

Abstract: A method for producing biochemical analysis data includes the steps of collecting light selectively released from a plurality of light releasable regions two-dimensionally formed to be spaced apart from each other in a sample placed on a sample stage by a plurality of light guide member each of which is disposed to face one of the plurality of light releasable regions, leading the thus collected light to a light detector and photoelectrically detecting the light by the light detector. According to this method, it is possible to produce biochemical analysis data having high quantitative characteristics by photoelectrically detecting light emitted from a plurality of light releasable regions even in the case where the plurality of light releasable regions labeled with a labeling substance are formed in a sample at a high density.

Abstract: The thickness of the projector device can be reduced by making the direction of irradiation of a digital micromirror device (DMD) with illuminating light by an illuminating optical system variable depending on whether the projector device is used or not used. As an illuminating optical system is provided rotatably around an optical axis of a projecting optical system, the position of the illuminating optical system can be varied depending on whether the projector device is used or not used, and the overall thickness of the projector device can be thereby reduced.

Abstract: The projector device can be reduced in thickness by using a total internal reflection (TIR) prism wherein the angle formed between a line of projection of the normal vector of the total reflection plane on the surface of a digital micromirror device (DMD) and the long or short side of the DMD is set to be smaller than 45°. The TIR prism has a total reflection plane for totally reflecting illuminating light brought to incidence by an illuminating optical system to guide it to the DMD and totally transmit light optically modulated by the DMD to guide it to a projecting optical system, and this total reflection plane is so arranged relative to the DMD that the angle formed between a line of projection of its normal vector on the surface of the DMD and the long side of the DMD form an angle smaller than 45°.

Abstract: A biochemical analysis data producing method includes the steps of irradiating a stimulable phosphor sheet including a support formed with a plurality of stimulable phosphor layer regions spaced apart from each other with light emitted from a standard light source or radiation emitted from a standard radiation source to expose the plurality of stimulable phosphor layer regions, irradiating the plurality of stimulable phosphor layer regions with a stimulating ray to excite stimulable phosphor contained in the plurality of stimulable phosphor layer regions, photoelectrically detecting stimulated emission released from the plurality of stimulable phosphor layer regions to produce correction data for the individual stimulable phosphor layer regions, superposing the stimulable phosphor sheet on a biochemical analysis unit including a plurality of spot-like regions formed in the same pattern as that of the plurality of stimulable phosphor layer regions of the stimulable phosphor sheet and selectively containing a r

Abstract: A DFB semiconductor laser device including: a semiconductor substrate; and an active layer and a diffraction grating overlying the semiconductor substrate, the diffraction grating having a composition of GaInNAs(Sb) and absorbing light having a laser emission wavelength of the active layer. The DFB semiconductor laser device having a higher SMSR can be provided which stably operates in a wider range of injection current by proving the diffraction grating formed by the GaInNAs(Sb) having the composition for efficiently absorbing light which has the laser emission wavelength of the active layer.

Abstract: Disclosed herein is a measuring apparatus equipped with a plurality of measuring units. Each measuring unit includes a dielectric block, a thin film layer formed on the dielectric block, and a sample holding mechanism for holding a sample on the thin film layer. The measuring apparatus is further equipped with an optical system for making a light beam enter the dielectric block at an angle of incidence so that a total internal reflection condition is satisfied at an interface between the dielectric block and the thin film layer, and photodetectors for measuring the intensity of the light beam totally reflected at the interface. The optical system is constructed so that light beams simultaneously enter the dielectric blocks of the measuring units. The number of photodetectors corresponds to the number of the light beams.

Abstract: A measuring apparatus is disclosed which includes a measuring unit equipped with a dielectric block and a thin film layer; an incidence system for making a light beam enter the dielectric block so that a condition for total internal reflection is satisfied at an interface between the dielectric block and the thin film layer; and a photodetector for receiving the light beam totally reflected at the interface. The measuring unit is measured a plurality of times, and a change in the state of attenuated total reflection during the plurality of measurements is detected. The sensor further includes a tilt measurement section for measuring the longitudinal tilt of the interface which changes the incidence angles during the plurality of measurements, and a calculating section for obtaining a measured value in which errors due to the longitudinal tilt have been corrected.

Abstract: A semiconductor laser device including an InP-based substrate, and a laser structure overlying said InP-based substrate and configured to form a ridge stripe, said laser structure having a plurality of compound semiconductor layers including at least one selectively-oxidized layer forming a current confinement structure, said selectively-oxidized layer including a pair of Al-oxidized peripheral areas and a non-oxidized central area sandwiched therebetween and forming a current path for said laser structure. The semiconductor laser device has a reduced threshold current and excellent lasing characteristics by the function of the oxidized layer or a current blocking layer.

Abstract: A sensor utilizing attenuated total reflection (ATR) is provided with a dielectric block, a thin film layer formed on a surface thereof, a light source for emitting a beam, and an optical system for making the beam enter the dielectric block at various angles of incidence so that a condition for total internal reflection is satisfied at an interface between the dielectric block and the thin film layer. The sensor is further provided with a photodetection section for detecting the ATR, a differentiation section for differentiating signals output from the light-receiving elements of the photodetection section, in a direction in which the light-receiving elements are juxtaposed, and an adjustment section for optically expanding the width of a dark line, corresponding to the ATR, of the beam which falls on the photodetection section, so that the width of the dark line becomes greater than a pitch between the light-receiving elements.

Abstract: A sensor utilizing attenuated total reflection is equipped with a dielectric block, a thin film layer formed on a surface of the dielectric block, an optical system for making a light beam enter the dielectric block at various angles of incidence so that the condition for total internal reflection is satisfied at an interface between the dielectric block and the thin film layer, a photodetector for detecting the light beam satisfying total internal reflection at the interface, and a differential amplifier array for differentiating a signal output from each of the light-receiving elements of the photodetector, in the juxtaposed direction of the light-receiving elements. Every time a measurement is made, a quantity change &Dgr;I′ in the differentiated value I′ is found by subtracting an initial value from the differentiated value I′. The quantity change &Dgr;I′ is amplified, so that measurements can be made without saturating subsequent electric circuits.

Abstract: A process for preparing a compound having structure (I) wherein n is an integer from 1-5; each of R1 and R2 independently is optionally substituted C1-C6 alkyl; each of W and X is independently hydrogen or C1-C6 alkyl; Y is O, S or NR3 where R3 is hydrogen, C1-C6 alkyl or a protective group; and Z is a CD ring structure, a steroid structure, or a vitamin D structure, each of which optionally having structure (IV) wherein W, X, Y and Z are defined above, in the presence of a base, with a compound having structure (V) or (v′) wherein n, R1 and R2 are as defined above, and E is an eliminating group.

Abstract: An n-type modulation-doped multi quantum well semiconductor laser device having a multi quantum well structure composed of a hetero-junction structure including well layers and barrier layers, characterized in that each of the well layers and each of the barrier layers are formed of an undoped semiconductor material and a semiconductor material modulation-doped with an n-type dopant, respectively, an anti-reflection film and a high-reflection film are formed on the front and rear facets, respectively, the resonator length is not shorter than 800 &mgr;m, and mirror loss (&agr;m) given by &agr;m=(1/2L)ln{1/(Rf×Rr)}, where L, Rf and Rr are the cavity length (cm), reflectance of the front facet, and reflectance of the rear facet, respectively, is not higher than 15 cm−1. The output of this laser device is higher than that of a conventional undoped MQW semiconductor laser device.