Abstract: An integration circuit is DC-coupled with a photomultiplier to convert a current signal output from the photomultiplier, to a voltage signal. The voltage signal converted by the integration circuit is logarithmically compressed with a logarithmic conversion circuit. An offset compensation circuit is provided for reducing an offset voltage that could occur because of charge injection in the integral action of the integration circuit.

Abstract: A semiconductor laser device includes a QW active layer structure including a GaxIn1−xAs1−ySby layer wherein 0.3≦1−x and 0.003≦y≦0.008, or a QW active layer structure including a GaxIn1−xAs1−y1−y2Ny1Sby2 layer wherein 0.3≦1−x, 0<y1<0.03 and 0.002≦y2≦0.06. The semiconductor laser device suppresses the three-dimensional epitaxial growth, and has superior optical characteristics including a low threshold current.

Abstract: A DFB semiconductor laser device including: a semiconductor substrate; and an active layer and a diffraction grating overlying the semiconductor substrate, the diffraction grating having a composition of GaInNAs(Sb) and absorbing light having a laser emission wavelength of the active layer. The DFB semiconductor laser device having a higher SMSR can be provided which stably operates in a wider range of injection current by proving the diffraction grating formed by the GaInNAs(Sb) having the composition for efficiently absorbing light which has the laser emission wavelength of the active layer.

Abstract: The present invention provides a semiconductive light-emitting device involving a light-emitting layer of the multilayer strained quantum well structure that has a plurality of quantum well layers and a plurality of barrier layers, where each of said quantum well layers is constituted of a semiconductive crystal subjected to intraplanar compressive strain; each of the barrier layers is constituted of semiconductor crystal of AlInAs, AlGaInAs or AlGaInAsP. For high differential gain, each quantum well layer is 6nm thick or less, and the summed quantum well layers measure 13 to 1000 nm in thickness.

Abstract: An image producing apparatus includes at least one light emitting diode stimulating ray source, a filter for cutting a stimulating ray emitted from the at least one light emitting diode stimulating ray source and allowing only fluorescent light generated by stimulation of a fluorescent substance by the stimulating ray to pass therethrough, and a solid state image sensor for detecting the fluorescent light transmitted through the filter. According to the thus constituted image producing apparatus, it is possible to safely produce a fluorescent image at low cost.

Abstract: The zooming device comprises first and second lens groups movably supported by a guide shaft which is disposed in parallel to a cam shaft, an outer surface of which has first and second cam grooves. First and second pins provided on the first and second lens groups are engaged with the first and second cam grooves, respectively. A cam surface of the first cam groove is inclined to a plane perpendicular to the axis of the cam shaft. By varying the distance between the guide shaft and the cam shaft, the first pin and the first lens group are moved along the optical axis of the lens groups, so that a focusing adjustment is performed.

Abstract: A battery accommodating chamber structure includes: a battery chamber substantially in the form of a half cylinder and having a battery inserting opening through which a cylindrical battery is loaded in or unloaded from the battery chamber by moving it in a direction perpendicular to the axis of the battery chamber; and a battery lid pivotally coupled to the battery chamber through a shaft which is in parallel with the axis of the battery chamber, to open and close the battery inserting opening. In the structure, the shaft is so arranged that, when the battery lid is opened by turning it about the shaft, at least a part of the battery cover is caused to go into the battery chamber. The battery accommodating chamber structure is free from a difficulty that the battery lid is lost or damaged, and the battery can be readily removed from the battery chamber with simple structure.

Abstract: A light redirecting member moves in concert with an aperture mechanism between a first position to redirect light to a metering sensor and a second position to allow light to pass to an imaging sensor. A motor drives the aperture mechanism to predetermined positions, swinging the associated light redirecting member in and out of an optical path from an imaging optical system to the imaging sensor.

Abstract: The present invention provides an optical semiconductive device of a type wherein current is laterally injected toward the MQW structure to exhibit impartial distribution of carriers, low threshold current, enhanced optical output and improved response speed, in which an active layer has MQW structure 34, inplanar compression strain is included at least in well layer 34a or barrier 34b. The latent inplanar compression strain produces compressive stress, which serves to vary an energy bandwidth when injecting current in parallel with the MQW structure 34, so as to lessen effective mass of heavy holes; accordingly, those holes are accelerated, where carriers are impartially distributed to improve the device performance.

Abstract: A 1:1 projection aligner includes a first optical system for irradiating a light beam, emitted from a light source, on a wafer through a mask; and a second optical system for irradiating a light beam, emitted from the same light source, as that of the first optical system for auto-alignment of the wafer. The aligner further includes a timer for measuring an elapsed time and outputting a signal after a specified time has elapsed, first and second shutters for shielding light paths of light beams from the first and second optical systems, and drive units for driving the shutters on the basis of a signal from the timer. In the case of a failure of the auto-alignment operation, the shutters are closed for preventing the wafer from being irradiated with a light beam for a long time, thereby preventing generation of a defect such as unevenness of exposure. An alarm is also outputted for informing an operator of the failure of the auto-alignment.

Abstract: A switching system for a camera is able to selectively transmit the motive power of a motor to either of a drive system for controlling an aperture or a drive system for controlling a zooming function. The switching system uses either (a) a transmission to couple either a telephoto or a wide-angle drive system, or (b) a direct coupling to the aperture drive system. The transmission to the zoom drive system has a range of play and a catch, and is controlled when the catch holds an aperture control lever away from the aperture drive system. The aperture drive system is controlled in the range of play of the transmission when the catch allows the aperture control lever to connect to the aperture drive system.

Abstract: A blade mechanism includes a driving ring. At least two blades each have a pivot, a driving pin and an opening. The pivot of one blade is placed between the pivot and the driving pin of the other blade. The blades are rotated around the pivots by the driving ring. The opening is formed in the blades so as not to block the rotation of the other blades.

Abstract: A photographing device includes a driving mechanism provided in a photographing optical system, a driving source located outside the photographing optical system, a rotational shaft located parallel with an optical axis of the photographing optical system, and in the photographing optical system, and connecting the driving source and the driving mechanism, an electro-magnetic clutch mechanism located around the optical axis of the photographing optical system, and arranged to connect/disconnect the driving mechanism and the driving source.

Abstract: A light-controlling variable aperture incorporates a resilient opaque tube positioned along the optical axis. When the resilient opaque tube is twisted, a constricting circular aperture forms a circular iris in an intermediate portion thereof. The circular iris is constricted to various sizes according to the degree of twisting of the tube to control the amount of light passing therethrough.

Abstract: There is provided a semiconductor optical device having remarkable features including a low threshold current, a high light emitting efficiency, a high and stable optical output, a fast modulation capability, a large gain characteristics, resistance against oxidization, a high quality and a high degree of processibility. The device comprises a pair of optical confinement layers 13, 17 and a pair of cladding layers 12 and 18 arranged on and under an active layer 15 to produce a SCH structure, at least one of said optical confinement layers 13 and 17 comprising multiquantum barrier (MQB) structures 14, 16 as part thereof. If the active layer 15 is of multiquantum well type, the barrier layer 15a of the active layer 15 also comprises a multiquantum barrier (MQB) structure. With such an arrangement, the barrier height of the barrier layer 15a and the optical confinement layers 13, 17 can be made very high relative to the active layer 15 (well layer 15b).

Abstract: To provide a Schottky junction device having a super-lattice arranged in the Schottky interface in order to secure a high Schottky barrier and at the same time showing a high speed response by resolving the phenomenon of piled-up holes at the upper edge of the valence band, while maintaining the height of the Schottky barrier. A Schottky junction device having a Schottky junction of a semiconductor and a metal and a superlattice on the interface of the semiconductor and the metal, wherein the upper edge of the valence band of said superlattice is varied to show a turn to a specific direction. The phenomenon of hole-piling up at the upper end of the valence band is resolved while maintaining the height of the Schottky barrier and consequently such a Schottky junction device shows an excellent high speed response.

Abstract: The present invention relates to an operational information renewing and memorizing apparatus and method for a photographing instrument. In more detail, one example is a function renewing and memorizing apparatus and method for a still video apparatus which memorizes or reproduces a still picture, comprising a picture display device for displaying information relating to functions for recording and reproducing, a selecting device for selecting a predetermined function from the information displayed on the picture display device, a memory device for memorizing the information of said function selected by the selecting device.

Abstract: The present invention relates to a method and an apparatus for forming photovoltaic conversion layers and electrode layers with increased efficiency by forming thin film layers under optimal conditions on a belt-like flexible substrate which is transported by means two interacting rollers. Films are formed on the substrate, which remains stationary during film-formation, in film-forming chambers maintained airtight by walls pressed against the substrate via sealing materials. Furthermore, film-forming chamber walls and a ground electrode contacting one side of the substrate are retracted from the substrate surface to facilitate movement of the substrate to a next film-forming position without being damaged. The apparatus of the present invention allows not only the film-forming time and conditions, as well as the size, of each film-forming chamber to be controlled independently, but it also prevents intermingling of gases present in different film-forming chambers.

Abstract: There is provided a high-quality semiconductor laser device having a current confinement feature along with a method of manufacturing the same in a simple manner. The upper clad layer 4 of a semiconductor laser device is a semiconductive layer made of a compound of elements of the III and V groups doped with an amphoteric impurity substance and the electric resistance of the lateral slopes is greater on the top of the mesa than on the upper clad layer 4 of the mesa. A method of manufacturing a semiconductor laser device comprises a step of repeating a cycle of crystal growth operation of sequentially forming a layer of an element of the III group, a layer of an amphoteric impurity substance and a layer of an element of the V group on said substrate by means of an MBE technique to produce said upper clad layer made of a compound of elements of the III and V groups.

Abstract: The present invention relates to a method and an apparatus for forming photovoltaic conversion layers and electrode layers with increased efficiency by forming thin film layers under optimal conditions on a belt-like flexible substrate which is transported by means two interacting rollers. Films are formed on the substrate, which remains stationary during film-formation, in film-forming chambers maintained airtight by walls pressed against the substrate via sealing materials. Furthermore, film-forming chamber walls and a ground electrode contacting one side of the substrate are retracted from the substrate surface to facilitate movement of the substrate to a next film-forming position without being damaged. The apparatus of the present invention allows not only the film-forming time and conditions, as well as the size, of each film-forming chamber to be controlled independently, but it also prevents intermingling of gases present in different film-forming chambers.