Abstract: A swizzle pattern generator is provided to reduce an overhead due to execution of a swizzle instruction in vector processing. The swizzle pattern generator is configured to provide swizzle patterns with respect to data sets of at least one vector register or vector processing unit. The swizzle pattern generator may be reconfigurable to generate various swizzle patterns for different vector operations.

Abstract: A method of controlling a pulley ratio of a continuously variable transmission vehicle, includes: sensing, by a controller, whether or not the position of a shift lever switches to a manual range, fixing, by the controller, a pulley ratio of a continuously variable transmission, when the position of the shift lever switches to the manual range, as a result of sensing, re-adjusting, by the controller, set pulley ratios of a plurality of manual shift positions based on the fixed pulley ratio of the continuously variable transmission, after the fixation, and controlling, by the controller, the continuously variable transmission at the re-adjusted pulley ratio of a target manual shift position, when manual shifting is required, after re-adjustment.

Abstract: The present disclosure relates to a ski wax composition including superhydrophobic carbon nano particles (CNPs) and a preparation method thereof, and more particularly, to a ski wax composition including a wax and superhydrophobic CNPs and a preparation method thereof According to the present invention, since the hydrophobicity and retention capacity of the wax can be increased, friction reducing performance of a ski wax can be increased on an ice surface or a snow surface. In addition, since the superhydrophobic CNPs, which can be easily prepared, are used, the productivity of the ski wax composition can be improved and superb friction reducing performance can be exhibited. Further, since the superhydrophobic CNPs are dispersed into the wax by a simple sonication process, a problem caused by adding a surfactant can be solved. Therefore, the ski wax composition according to the present disclosure can be widely applied to industrial fields associated with the winter sports, including skiing.

Abstract: A chemical mechanical polishing method includes providing a pad conditioner, such that the pad conditioner includes a base and a plurality of tips protruding from a surface of the base, adjusting a surface roughness of an upper surface of each tip of the plurality of tips, and adjusting a polishing rate of chemical mechanical polishing using the adjusted surface roughness of the upper surfaces of the plurality of tips.

Abstract: A method of controlling a pulley ratio of a continuously variable transmission vehicle, includes: sensing, by a controller, whether or not the position of a shift lever switches to a manual range, fixing, by the controller, a pulley ratio of a continuously variable transmission, when the position of the shift lever switches to the manual range, as a result of sensing, re-adjusting, by the controller, set pulley ratios of a plurality of manual shift positions based on the fixed pulley ratio of the continuously variable transmission, after the fixation, and controlling, by the controller, the continuously variable transmission at the re-adjusted pulley ratio of a target manual shift position, when manual shifting is required, after re-adjustment.

Abstract: A method for controlling a gear ratio of a continuously variable transmission vehicle includes: a step of detecting a position of a shift lever by a controller; a step of checking, by the controller, a gear ratio variation based on a difference between a desired stage gear ratio and a current gear ratio in a continuously variable transmission when the shift lever is detected to be positioned in a manual range; a step of calculating, by the controller, a gear ratio correction value based on a rate of change of engine RPM when the gear ratio variation is checked as being other than zero after the step of checking the gear ratio variation; and a step of correcting, by the controller, the gear ratio variation in response to the calculated gear ratio correction value after the calculation step.

Abstract: A composition for cleaning a magnetic pattern, a method of manufacturing a magnetic memory device, a method of forming a magnetic pattern, and a magnetic memory device, the composition including a glycol ether-based organic solvent; a decomposing agent that includes an aliphatic amine; and at least one of a chelating agent, or a cleaning accelerator that includes an organic alkaline compound, wherein the composition is devoid of water.

Abstract: A slurry composition for chemical mechanical polishing, the slurry composition including ceramic polishing particles; a dispersion agent; a pH control agent and an additive having affinity with silicon nitride.

Abstract: The present invention provides a substrate treating apparatus. The substrate treating apparatus includes a chamber configured to provide a space for processing a substrate, a support unit provided in the chamber and configured to support the substrate, and a nozzle configured to supply a cleaning medium to the substrate supported by the support unit, the nozzle may include a contraction part which has an inlet, through which the cleaning medium is introduced, and a cross-sectional area of which decreases as it goes far from the inlet, an expansion part which has an ejection hole, through which the cleaning medium is ejected, and a cross-sectional area of which increases as it becomes closer to the ejection hole, and an orifice located between the contraction part and the expansion part, and the cleaning medium introduced into the contraction part is a single gas.

Abstract: A semiconductor device includes a first fin-type pattern on a substrate, having a first sidewall and a second sidewall opposed to each other; a first trench formed in contact with the first sidewall; a second trench formed in contact with the second sidewall; a first field insulating layer partially filling the first trench; and a second field insulating layer partially filling the second trench and a second field insulating layer partially filling the second trench. The second field insulating layer includes a first region and a second region disposed in a sequential order starting from the second sidewall, an upper surface of the second region being higher than an upper surface of the first field insulating layer. The device further includes a gate electrode on the first fin-type pattern, the first field insulating layer and the second field insulating layer, the gate electrode intersecting the first fin-type pattern and overlapping the second region.

Abstract: A composition for cleaning a magnetic pattern, a method of manufacturing a magnetic memory device, a method of forming a magnetic pattern, and a magnetic memory device, the composition including a glycol ether-based organic solvent; a decomposing agent that includes an aliphatic amine; and at least one of a chelating agent, or a cleaning accelerator that includes an organic alkaline compound, wherein the composition is devoid of water.

Abstract: A method and apparatus for generating a test bench for verifying a processor decoder are provided. The method including receiving an architecture description comprising processor decoder information, parsing the received architecture description into information for verifying the processor decoder, and generating the test bench to verify the processor decoder based on the parsed information.

Abstract: A method for fabricating a semiconductor device may comprise forming a first transistor having a first threshold voltage in a first region of a substrate, forming a second transistor having a second threshold voltage less than the first threshold voltage in a second region of the substrate, forming a third interlayer insulating film in the third region, and planarizing the first transistor, the second transistor and the third interlayer insulating film. The first transistor may include a first gate electrode having a first height and a first interlayer insulating film having the first height, and the second transistor may include a second gate electrode having a second height shorter than the first height and a second interlayer insulating film having the second height. The third interlayer insulating film may have the first height.

Abstract: A semiconductor device includes a fin active region protruding from a substrate and extending in a first direction, a gate electrode covering an upper surface and sidewalls of the fin active region and extending in a second direction crossing the first direction, a gate spacer structure on opposite sidewalls of the gate electrode, an insulating capping layer on the gate electrode and extending in the second direction, an insulating liner on opposite sidewalls of the gate electrode and on an upper surface of the gate spacer structure, and a self-aligned contact at a side of the gate electrode. The insulating liner may have a second thickness greater than a first thickness of the gate spacer structure. A sidewall of the self-aligned contact may be in contact with the gate spacer structure and the insulating liner.

Abstract: Disclosed is a method of manufacturing semiconductor devices. A gate trench and an insulation pattern defined by the gate trench are formed on a substrate and the protection pattern is formed on the insulation pattern. A gate dielectric layer, a work function metal layer and a sacrificial layer are sequentially formed the substrate along a surface profile of the gate trench. A sacrificial pattern is formed by a CMP while not exposing the insulation pattern. A residual sacrificial pattern is formed at a lower portion of the gate trench and the gate dielectric layer and the work function metal layer is etched into a gate dielectric pattern and a work function metal pattern using the residual sacrificial pattern as an etch stop layer.

Abstract: A cache memory and a method of managing the same are provided. The method of managing a cache memory includes determining whether a number of bits of a data bandwidth stored in a bank is an integer multiple of a number of bits of unit data in data to be stored, storing first unit data, among the data to be stored, in a first region of a first address in the bank in response to the number of bits of the data bandwidth not being the integer multiple of the number of bits of the unit data, and storing part of second unit data, among the data to be stored, in a second region of the first address.

Abstract: An oil-collecting apparatus includes: a body including an inlet through which a liquid is introduced, a first outlet through which purified water generated from the liquid introduced through the inlet is discharged, and a second outlet through which materials collected from the liquid are discharged; and a filter arranged at the first outlet of the body and generating the purified water by collecting the materials included in the liquid by allowing the liquid introduced through the inlet to pass therethrough.

Abstract: An etching composition selectively removes a titanium nitride film from a stacked conductive film structure including a titanium nitride (TiN) film and a tantalum nitride (TaN) film. The etching composition configured to etch titanium nitride (TiN) includes 5 wt % to 30 wt % of hydrogen peroxide, 15 wt % to 50 wt % of acid compound, and 0.001 wt % to 5 wt % of corrosion inhibitor, with respect to a total weight of the etching composition, wherein the acid compound includes at least one of phosphoric acid (H3PO4), nitric acid (HNO3), hydrochloric acid (HCl), hydroiodic acid (HI), hydrobromic acid (HBr), perchloric acid (HNO4), silicic acid (H2SiO3), boric acid (H3BO3), acetic acid (CH3COOH), propionic acid (C2H5COOH), lactic acid (CH3CH(OH)COOH), and glycolic acid (HOCH2COOH).

Abstract: A method for manufacturing a conductive film, the method comprising the steps of: preparing a mixture liquid in which a catalytic metal is dispersed in a precursor or a precursor compound of a two-dimensional nanomaterial; and forming a catalytic metal/two-dimensional nanomaterial by irradiating the mixture liquid with ultrasonic waves to generate microbubbles, degrading the precursor compound using energy, which is generated when the microbubbles burst, to synthesize the two-dimensional nanomaterial on an outer wall of the catalytic metal, wherein the method further comprises: dispersing the catalytic metal/two-dimensional nanomaterial in a dispersion to prepare ink; and applying the ink on a substrate and performing rapid air-sintering. Thus, the two-dimensional nanomaterial is synthesized on an outer wall of a non-noble metal having high oxidative characteristics, thereby preventing oxidation of the metal from air and increasing thermal conductivity and electrical conductivity.

Abstract: Provided are a texture compressing method and a texture compressing apparatus, which compress some color information of a texture block, which is unable to realize all colors included in the texture block by a determined compression bit number, to be stored in a compression data bit of a texture block, which is able to realize all colors included in the texture block by a bit number lower than the determined compression bit number, based on a color distribution of each texture block, and a texture decompressing method and a texture decompressing apparatus corresponding to the texture compressing method and the texture compressing apparatus.