Abstract: A novel compound of the Chemical Formula 1 and an organic electroluminescent device including the compound are disclosed.

Abstract: A multilayer electronic component includes: a body including a plurality of dielectric layers and internal electrodes disposed to face each other with each of the plurality of dielectric layers interposed therebetween; and external electrodes connected to the internal electrodes and disposed on outer surfaces of the body, wherein each of the plurality of dielectric layers includes a BaTiO3-based base material main component and an accessory component including dysprosium (Dy) and terbium (Tb), a content of terbium (Tb) is 0.2 mol or more and less than 1.0 mol based on 100 mol of the base material main component, and the dielectric layer includes a plurality of dielectric crystal grains having a particle size of 60 nm or more and 250 nm or less at a point (D50) at which a cumulative volume is 50% in a cumulative particle size distribution according to a particle size distribution system.

Abstract: Proposed is a method for providing an emoticon input interface by a user terminal. The method may include displaying a first input interface for inputting an emoticon to be posted on a profile page of a user. The method may also include receiving a selection interaction of selecting a first emoticon to be posted on the profile page of the user via the first input interface, and displaying the selected first emoticon on the profile page of the user. The first input interface may include user custom information associated with emoticon historical information of the user. The user custom information may be identical to at least a part of user custom information for a second input interface for inputting an emoticon to be displayed in a chat message.

Abstract: A battery module includes a cell stack in which a plurality of battery cells are stacked; a pair of bus bar frames configured to cover one side and another side, respectively, of the cell stack in a longitudinal direction; a housing configured to accommodate a combined body of the cell stack and the pair of bus bar frames so that the pair of bus bar frames is exposed to an outside of the housing; and an insulation pad interposed between a side surface of the cell stack and an inner surface of the housing and between a side surface of one of the pair of bus bar frames and the inner surface of the housing.

Abstract: A muscular strength assisting apparatus includes a muscular strength assisting portion that assists a user's muscular strength and a first connecting link including one side connected to one side of the muscular strength assisting portion and an opposite side rotatable relative to a shoulder of the user about a first rotation axis. The muscular strength assisting portion includes an upper arm module that assists muscular strength of an upper arm of the user and a link assembly including one side connected to one side of the upper arm module to be rotatable about a second rotation axis non-parallel to the first rotation axis and an opposite side disposed adjacent to a portion of a body of the user to be supported on the user.

Abstract: A semiconductor device including a substrate; gate structures spaced apart from each other on the substrate, each gate structure including a gate electrode and a gate capping pattern; source/drain patterns on opposite sides of the gate structures; first isolation patterns that respectively penetrate adjacent gate structures; and a second isolation pattern that extends between adjacent source/drain patterns, and penetrates at least one gate structure, wherein each first isolation pattern separates the gate structures such that the gate structures are spaced apart from each other, the first isolation patterns are aligned with each other, and top surfaces of the first and second isolation patterns are each located at a level the same as or higher than a level of a top surface of the gate capping pattern.

Abstract: A semiconductor device may include a substrate including an active pattern, a device isolation layer defining the active pattern, a channel pattern on the active pattern, a gate electrode on the channel pattern, and a first isolation pattern and a second isolation pattern penetrating the gate electrode. The first isolation pattern may be extended into the device isolation layer, and the second isolation pattern may be provided to penetrate the gate electrode and the device isolation layer and may be extended into an upper portion of the substrate. A level of a bottom surface of the second isolation pattern may be lower than a level of a bottom surface of the device isolation layer.

Abstract: The present disclosure relates to a finger-gripper assembly and a finger-gripper assembly system including the same. The finger-gripper assembly includes a finger and a gripper to which the finger is coupled so as to be removable. The gripper includes an arm, an extender coupled to a lower end of the arm so as to be rotatable about a first axis, wherein the extender extends, from the arm along a second axis that extends in an extension direction and intersects with the first axis, and a connector coupled to a lower side of the extender so as to be movable along the second axis, wherein the connector is connectable to the finger.

Abstract: Disclosed are semiconductor devices and methods of fabricating the same. The semiconductor device includes a plurality of gate structures that are spaced apart from each other in a first direction on a substrate and extend in a second direction intersecting the first direction, and a plurality of separation patterns penetrating immediately neighboring ones of the plurality of gate structures, respectively. Each of the plurality of separation patterns separates a corresponding one of the neighboring gate structures into a pair of gate structures that are spaced apart from each other in the second direction. The plurality of separation patterns are spaced apart from and aligned with each other along the first direction.

Abstract: Disclosed are semiconductor devices and methods of fabricating the same. The semiconductor device includes a plurality of gate structures that are spaced apart from each other in a first direction on a substrate and extend in a second direction intersecting the first direction, and a plurality of separation patterns penetrating immediately neighboring ones of the plurality of gate structures, respectively. Each of the plurality of separation patterns separates a corresponding one of the neighboring gate structures into a pair of gate structures that are spaced apart from each other in the second direction. The plurality of separation patterns are spaced apart from and aligned with each other along the first direction.

Abstract: A gripper includes a base unit and finger units coupled to a protruding direction-side of the base unit. Each of the finger units includes a first link structure coupled to the base unit, a second link structure rotatably coupled to the first link structure, and a third link structure rotatably coupled to both the first link structure and the second link structure, and the second link structure includes a finger tip. When the finger unit is pressed in the protrusion direction, the finger tip is brought closer to the base unit in the protrusion direction by the first link structure. When the finger unit is further pressed in the protrusion direction, the finger tip is rotated to be oriented in a direction opposite to the protruding direction in a state in which the finger tip is oriented in a gripping direction that is a direction perpendicular to the protruding direction.

Abstract: A semiconductor device having simplicity in design and improved performance and methods for fabricating the same are provided. The semiconductor device includes a substrate including a frontside and a backside opposite the frontside, an electronic device on the frontside of the substrate, an interlayer insulating layer covering the electronic device, a frontside wiring structure on the interlayer insulating layer, a backside wiring structure on the backside of the substrate, and at least one unit chain connecting the electronic device with the backside wiring structure, the unit chain including a through plug passing through the substrate, a connection contact on the interlayer insulating layer, a first chain plug passing through the interlayer insulating layer to connect the through plug with the connection contact, and a second chain plug passing through the interlayer insulating layer to be connected to the through plug.

Abstract: Semiconductor devices and methods of forming the same are provided. Semiconductor devices may include first and second active patterns on a substrate. Each of the first and second active patterns may extend in a first direction. The first and second active patterns may be aligned along the first direction and may be separated by a first trench extending in a second direction. The first trench may define a first sidewall of the first active pattern. The semiconductor devices may also include a channel pattern including first and second semiconductor patterns stacked on the first active pattern, a dummy gate electrode on the channel pattern and extending in the second direction, and a gate spacer on one side of the dummy gate electrode, the one side of the dummy gate electrode being adjacent to the first trench. The gate spacer may cover a first sidewall of the first active pattern.

Abstract: An embodiment system includes an air mobility vehicle configured to transmit a radio signal required to determine a relative position of the air mobility vehicle in response to receiving a signal indicating that landing on a landing pad is permitted, an airport device configured to receive the radio signal, determine the relative position of the air mobility vehicle, and transmit the relative position, and a service provider configured to transmit a command for allowing the air mobility vehicle to land vertically to the air mobility vehicle when it is determined that the air mobility vehicle is located within a predetermined range from the landing pad based on the relative position.

Abstract: A semiconductor device includes first and second active patterns, a field insulating film between the first and second active patterns, a first gate structure intersecting the first active pattern and including a first gate electrode and a first gate spacer, a second gate structure intersecting the second active pattern and including a second gate electrode and a second gate spacer, a gate separation structure on the field insulating film between the first and second gate structures, the gate separation structure including a gate separation filling film on a gate separation liner, and a connecting spacer between the gate separation structure and the field insulating film, the connecting spacer protruding from a top surface of the field insulating film, and the gate separation liner contacting the connecting spacer and extending along a top surface and sidewalls of the connecting spacer and along the top surface of the field insulating film.

Abstract: An autonomous driving control method receives a HD map and extracts a HD road boundary and a HD lane line based on the HD map. A real-time map displaying a road driving environment of a vehicle is generated using sensor information detected by a sensor mounted on the vehicle. A real-time road boundary and a real-time lane are extracted based on the generated real-time map. The HD road boundary is compared to and analyzed from the real-time road boundary, and the HD lane line is compared and analyzed to the real-time lane. It is determined whether the HD map has changed based on the analyzed result value.

Abstract: A semiconductor device including a substrate; gate structures spaced apart from each other on the substrate, each gate structure including a gate electrode and a gate capping pattern; source/drain patterns on opposite sides of the gate structures; first isolation patterns that respectively penetrate adjacent gate structures; and a second isolation pattern that extends between adjacent source/drain patterns, and penetrates at least one gate structure, wherein each first isolation pattern separates the gate structures such that the gate structures are spaced apart from each other, the first isolation patterns are aligned with each other, and top surfaces of the first and second isolation patterns are each located at a level the same as or higher than a level of a top surface of the gate capping pattern.