Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a substrate, and the substrate includes a first region and a second region. The semiconductor device structure includes a first conductive structure formed over the first region of the substrate and a bottom magnetic layer formed over the second region of the substrate. The semiconductor device structure also includes a second conductive structure formed over the bottom magnetic layer and a first insulating layer formed over a sidewall surface of the first conductive structure. The semiconductor device structure further includes a second insulating layer formed over the first insulating layer, and the second insulating layer has a stair-shaped structure.

Abstract: Semiconductor devices are provided. The semiconductor device includes a first dielectric layer, a bump, an etching stop layer and a spacer. The first dielectric layer is disposed over and exposes a conductive structure. The bump is partially disposed in the first dielectric layer to electrically connect the conductive structure. The etching stop layer is disposed over the first dielectric layer aside the bump. The spacer surrounds the bump and disposed between the etching stop layer and the bump.

Abstract: A structure and a formation method of a semiconductor device are provided. The method includes forming a passivation layer over a semiconductor substrate. The method also includes forming a magnetic element over the passivation layer. The method further includes forming an isolation layer over the magnetic element and the passivation layer. The isolation layer includes a polymer material. In addition, the method includes forming a conductive line over the isolation layer, and the conductive line extends across the magnetic element.

Abstract: A method of forming a semiconductor device is provided. A first substrate is provided with a conductive feature therein, a metal bump over the conductive feature and a passivation stack aside the metal bump. A first insulating layer is formed over the metal bump and the passivation stack. First and second patterning processes are performed to form first and second opening patterns in the first insulating layer. The metal bump is exposed by the second patterning process. A second substrate is provided with a second insulating layer thereon. The second substrate is bonded to the first substrate with the second insulating layer and the first insulating layer facing each other, so that the second insulating layer fills in the first and second opening patterns of the first insulating layer. The first insulating layer and a portion of the passivation stack are removed.

Abstract: A method of manufacturing a semiconductor device and the semiconductor device are provided in which a plurality of layers with cobalt-zirconium-tantalum are formed over a semiconductor substrate, the plurality of layers are patterned, and multiple dielectric layers and conductive materials are deposited over the CZT material. Another layer of CZT material encapsulates the conductive material.

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a first conductive line over a substrate. The semiconductor device structure includes a first protection cap over the first conductive line. The semiconductor device structure includes a first photosensitive dielectric layer over the substrate, the first conductive line, and the first protection cap. The semiconductor device structure includes a conductive via structure passing through the first photosensitive dielectric layer and connected to the first protection cap. The semiconductor device structure includes a second conductive line over the conductive via structure and the first photosensitive dielectric layer. The semiconductor device structure includes a second protection cap over the second conductive line. The semiconductor device structure includes a second photosensitive dielectric layer over the first photosensitive dielectric layer, the second conductive line, and the second protection cap.

Abstract: A semiconductor structure and a method for forming the same are provided. The method for manufacturing a semiconductor structure includes forming a gate structure over a substrate and forming a spacer on a sidewall of the gate structure. The method for manufacturing a semiconductor structure further includes forming a hard mask structure on a top surface of the gate structure and on an upper portion of the spacer but not on a bottom portion of the spacer.

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a semiconductor substrate and a magnetic element over the semiconductor substrate. The magnetic element has a first edge. The semiconductor device structure also includes an adhesive element between the magnetic element and the semiconductor substrate, and the adhesive element has a second edge. The semiconductor device structure further includes an isolation element extending across the magnetic element. The isolation element partially covers a top surface of the magnetic element and partially covers sidewall surfaces of the magnetic element. The isolation element has a third edge, and the second edge is closer to the third edge than the first edge. In addition, the semiconductor device structure includes a conductive line over the isolation element.

Abstract: A semiconductor device includes a first conductive layer, an organic layer and a silicon layer. The first conductive layer includes a first surface. The organic layer is disposed over the first surface of the first conductive layer. The silicon layer is disposed over the organic layer and extended onto and in contact with the first surface of the first conductive layer.

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a semiconductor substrate and a magnetic element over the semiconductor substrate. The semiconductor device structure also includes an isolation element over the magnetic element. The isolation element partially covers a top surface of the magnetic element. The semiconductor device structure further includes a conductive line over the isolation element. In addition, the semiconductor device structure includes a dielectric layer over the conductive line and the magnetic element.

Abstract: A semiconductor processing station includes first and second chambers, and a cooling stage. The second chamber includes a cooling pipe disposed inside the second chamber, and an external pipe. The cooling pipe includes a first segment disposed along a sidewall of the second chamber, and a second segment disposed perpendicular to the first segment and located above a wafer carrier in the second chamber. An end of the second segment is connected to an end of the first segment. The external pipe is connected to the second segment distal from the end of the second segment to provide a fluid to flow through the cooling pipe from an exterior to an interior of the second chamber. The fluid discharges toward the wafer carrier through the first segment. The first chamber is surrounded by the second chamber and the cooling stage, and communicates between the cooling stage and the second chamber.

Abstract: A semiconductor processing station including a central transfer chamber, a load lock chamber disposed adjacent to the central transfer chamber, and a cooling stage disposed adjacent to the load lock chamber and the central transfer chamber is provided. The load lock chamber is adapted to contain a wafer carrier including a plurality of wafers. The central transfer chamber communicates between the cooling stage and the load lock chamber to transfer a wafer of the plurality of wafers between the cooling stage and the load lock chamber.

Abstract: A structure and a formation method of a semiconductor device are provided. The method includes forming an adhesive layer over a semiconductor substrate and forming a magnetic element over the adhesive layer. The method also includes forming an isolation element extending across the magnetic element. The isolation element partially covers the top surface of the magnetic element and partially covers sidewall surfaces of the magnetic element. The method further includes partially removing the adhesive layer such that an edge of the adhesive layer is laterally disposed between an edge of the magnetic element and an edge of the isolation element. In addition, the method includes forming a conductive line over the isolation element.

Abstract: A method for forming a semiconductor device structure is provided. The method includes forming a first conductive line over a substrate. The method includes forming a first protection cap over a first portion of the first conductive line. The first protection cap and the first conductive line are made of different conductive materials. The method includes forming a first photosensitive dielectric layer over the substrate, the first conductive line, and the first protection cap. The method includes forming a first opening in the first photosensitive dielectric layer and over the first protection cap. The method includes forming a conductive via structure and a second conductive line over the first conductive line. The conductive via structure is in the first opening and over the first protection cap, and the second conductive line is over the conductive via structure and the first photosensitive dielectric layer.

Abstract: Semiconductor devices and methods of forming the same are disclosed. One of the semiconductor devices includes a first conductive layer, an organic layer, a silicon layer, a magnetic layer and a second conductive layer. The organic layer is disposed over and exposes a portion of the first conductive layer. The silicon layer is disposed on and in contact with the organic layer. The magnetic layer is disposed over the first conductive layer. The second conductive layer is disposed over the organic layer and the magnetic layer to electrically connect the first conductive layer.

Abstract: A structure and a formation method of a semiconductor device are provided. The method includes forming an etch stop layer over a semiconductor substrate and forming a magnetic element over the etch stop layer. The method also includes forming an isolation element extending across the magnetic element. The isolation element partially covers the top surface of the magnetic element and partially covers sidewall surfaces of the magnetic element. The method further includes forming a conductive line over the isolation element. In addition, the method includes forming a dielectric layer over the conductive line, the isolation element, and the magnetic element.

Abstract: A structure and a formation method of a semiconductor device are provided. The method includes forming an adhesive layer over a semiconductor substrate and forming a magnetic element over the adhesive layer. The method also includes forming an isolation element extending across the magnetic element. The isolation element partially covers the top surface of the magnetic element and partially covers sidewall surfaces of the magnetic element. The method further includes partially removing the adhesive layer such that an edge of the adhesive layer is laterally disposed between an edge of the magnetic element and an edge of the isolation element. In addition, the method includes forming a conductive line over the isolation element.

Abstract: A structure and a formation method of a semiconductor device are provided. The method includes forming a passivation layer over a semiconductor substrate. The method also includes forming a magnetic element over the passivation layer. The method further includes forming an isolation layer over the magnetic element and the passivation layer. The isolation layer includes a polymer material. In addition, the method includes forming a conductive line over the isolation layer, and the conductive line extends across the magnetic element.

Abstract: A method of forming a semiconductor device is provided. A first substrate is provided with a conductive feature therein, a metal bump over the conductive feature and a passivation stack aside the metal bump. A first insulating layer is formed over the metal bump and the passivation stack. First and second patterning processes are performed to form first and second opening patterns in the first insulating layer. The metal bump is exposed by the second patterning process. A second substrate is provided with a second insulating layer thereon. The second substrate is bonded to the first substrate with the second insulating layer and the first insulating layer facing each other, so that the second insulating layer fills in the first and second opening patterns of the first insulating layer. The first insulating layer and a portion of the passivation stack are removed.

Abstract: A structure and a formation method of a semiconductor device are provided. The method includes forming an etch stop layer over a semiconductor substrate and forming a magnetic element over the etch stop layer. The method also includes forming an isolation element extending across the magnetic element. The isolation element partially covers the top surface of the magnetic element and partially covers sidewall surfaces of the magnetic element. The method further includes forming a conductive line over the isolation element. In addition, the method includes forming a dielectric layer over the conductive line, the isolation element, and the magnetic element.