Abstract: Semiconductor devices and methods of forming the same are disclosed. One of the semiconductor device includes an inductor structure, and the inductor structure is on a substrate and includes a first metal layer, a magnetic stack, a polymer layer and a second metal layer. The first metal layer is over the substrate. The magnetic stack is over the first metal layer and has a substantially zigzag shaped sidewall. The polymer layer is over the first metal layer and encapsulates the magnetic stack. The second metal layer is over the polymer layer.

Abstract: A semiconductor structure includes an interconnect structure, at least one first metal pad, at least one second metal pad, at least one first bump, at least one second bump, at least one photosensitive material, and a bonding layer. The first metal pad and the second metal pad are disposed on and electrically connected to the interconnect structure. The first bump is disposed on the first metal pad. The second bump is disposed on the second metal pad. The photosensitive material is disposed on the first bump. The bonding layer is in contact with the photosensitive material and the second bump. The photosensitive material is disposed between the first bump and the bonding layer.

Abstract: Semiconductor devices and methods of forming the same are disclosed. One of the semiconductor devices includes a conductive layer, a first dielectric layer, a magnetic layer and an etch stop stack. The first dielectric layer is disposed over the conductive layer. The magnetic layer is disposed over the first dielectric layer. The etch stop stack is disposed between the magnetic layer and the first dielectric layer. The etch stop stack includes a second dielectric layer and a plurality of unit layers between the second dielectric layer and the magnetic layer, and each of the plurality of unit layers comprises a tantalum layer and a tantalum oxide layer on the tantalum layer.

Abstract: Semiconductor devices and methods of forming the same are disclosed. One of the semiconductor devices includes a conductive layer, a first dielectric layer, a magnetic layer and an etch stop stack. The first dielectric layer is disposed over the conductive layer. The magnetic layer is disposed over the first dielectric layer. The etch stop stack is disposed between the magnetic layer and the first dielectric layer. The etch stop stack includes a second dielectric layer and a plurality of unit layers between the second dielectric layer and the magnetic layer, and each of the plurality of unit layers comprises a tantalum layer and a tantalum oxide layer on the tantalum layer.

Abstract: A semiconductor structure includes an interconnect structure, at least one first metal pad, at least one second metal pad, at least one first bump, at least one second bump, at least one photosensitive material, and a bonding layer. The first metal pad and the second metal pad are disposed on and electrically connected to the interconnect structure. The first bump is disposed on the first metal pad. The second bump is disposed on the second metal pad. The photosensitive material is disposed on the first bump. The bonding layer is in contact with the photosensitive material and the second bump. The photosensitive material is disposed between the first bump and the bonding layer.

Abstract: A chamber includes a sidewall, a cooling pipe, and an external pipe. The cooling pipe includes a first segment extending along the sidewall of the chamber, and includes multiple purge nozzles. The external pipe extends to inside the chamber and is connected to the first segment of the cooling pipe. A semiconductor processing station includes a central transfer chamber, a load lock chamber, and a cooling stage. The load lock chamber and the cooling stage are disposed adjacent to the central transfer chamber. The load lock chamber is adapted to contain a wafer carrier having multiple wafers. The central transfer chamber communicates between the cooling stage and the load lock chamber to transfer a wafer between the cooling stage and the load lock chamber. A semiconductor process using the semiconductor processing station is also provided.

Abstract: A method of manufacturing a semiconductor device and the semiconductor device are provided in which a plurality of layers with cobalt-zirconium-tantalum are formed over a semiconductor substrate, the plurality of layers are patterned, and multiple dielectric layers and conductive materials are deposited over the CZT material. Another layer of CZT material encapsulates the conductive material.

Abstract: A method of manufacturing a semiconductor device and the semiconductor device are provided in which a plurality of layers with cobalt-zirconium-tantalum are formed over a semiconductor substrate, the plurality of layers are patterned, and multiple dielectric layers and conductive materials are deposited over the CZT material. Another layer of CZT material encapsulates the conductive material.

Abstract: A semiconductor device includes: a first conductive line disposed on a substrate, a second conductive line disposed on the substrate, and the second conductive line separated with the first conductive line by a trench; an insulating layer disposed on the first conductive line and the second conductive line, and filled the trench between the first conductive line and the second conductive line; and a magnetic film having a first surface and a second surface opposite to the first surface, and the first surface disposed on the insulating layer; wherein the first surface has a first concave directly above the trench, and the first concave has a first obtuse angle of at least 170 degree.

Abstract: A method for forming a semiconductor device structure is provided. The method includes providing a substrate. The method includes transferring the substrate from a stage to a deposition chamber, and no heating operation is performed on the stage. The method also includes depositing a resistor layer on the substrate. The resistor layer may have a major structure that is amorphous.

Abstract: A semiconductor device structure including a resistor layer is provided. The semiconductor device structure includes a gate structure formed over the first region of the substrate and an inter-layer dielectric (ILD) layer formed adjacent to the gate structure. The semiconductor device structure further includes a resistor layer is formed over the ILD layer over the second region of the substrate, and the major structure of the resistor layer is amorphous.

Abstract: A chamber includes a sidewall, a cooling pipe, and an external pipe. The cooling pipe includes a first segment extending along the sidewall of the chamber, and includes multiple purge nozzles. The external pipe extends to inside the chamber and is connected to the first segment of the cooling pipe. A semiconductor processing station includes a central transfer chamber, a load lock chamber, and a cooling stage. The load lock chamber and the cooling stage are disposed adjacent to the central transfer chamber. The load lock chamber is adapted to contain a wafer carrier having multiple wafers. The central transfer chamber communicates between the cooling stage and the load lock chamber to transfer a wafer between the cooling stage and the load lock chamber. A semiconductor process using the semiconductor processing station is also provided.

Abstract: An interconnect structure and a method of forming an interconnect structure are disclosed. The interconnect structure includes a contact layer over a substrate, a dielectric layer over the contact layer, a silicide layer over the exposed portion of the contact layer, a barrier layer along sidewalls of the opening, an alloy layer over the barrier layer, a glue layer over the alloy layer, and a conductive plug over the glue layer, wherein the dielectric layer has an opening, and the opening exposes a portion of the contact layer.

Abstract: A semiconductor device structure including a resistor layer is provided. The semiconductor device structure includes a gate structure formed over the first region of the substrate and an inter-layer dielectric (ILD) layer formed adjacent to the gate structure. The semiconductor device structure further includes a resistor layer is formed over the ILD layer over the second region of the substrate, and the major structure of the resistor layer is amorphous.

Abstract: A semiconductor structure and a method for forming the same are provided. The method for manufacturing a semiconductor structure includes forming a gate structure over a substrate and forming a spacer on a sidewall of the gate structure. The method for manufacturing a semiconductor structure further includes forming a hard mask structure on a top surface of the gate structure and on an upper portion of the spacer but not on a bottom portion of the spacer.

Abstract: An interconnect structure and a method of forming an interconnect structure are disclosed. The interconnect structure includes a contact layer over a substrate, a dielectric layer over the contact layer, a silicide layer over the exposed portion of the contact layer, a barrier layer along sidewalls of the opening, an alloy layer over the barrier layer, a glue layer over the alloy layer, and a conductive plug over the glue layer, wherein the dielectric layer has an opening, and the opening exposes a portion of the contact layer.

Abstract: An interconnect structure and a method of forming an interconnect structure are disclosed. The interconnect structure includes a contact layer over a substrate; a dielectric layer over the contact layer, wherein the dielectric layer has an opening, the opening exposing a portion of the contact layer; a silicide layer over the exposed portion of the contact layer; a barrier layer along sidewalls of the opening; an alloy layer over the barrier layer; a glue layer over the alloy layer; and a conductive plug over the glue layer.

Abstract: A method of forming an integrated circuit structure is provided. The method includes providing a substrate, the substrate having a conductive pad thereon. A dielectric buffer layer is formed over at least a portion of the conductive pad, and an under-bump-metallurgy (UBM) is formed directly coupled to the conductive pad, wherein the UBM extends over at least a portion of the dielectric buffer layer. Thereafter, a conductive pillar is formed over the UBM, and one or more conductive materials are formed over the conductive pillar. The substrate may be attached to a carrier substrate using an adhesive.

Abstract: A semiconductor baking apparatus includes a load lock chamber, a process chamber, a transfer chamber, a first interior door, and a controller. The process chamber has a first accommodating space therein. The transfer chamber has a second accommodating space therein, and the transfer chamber is connected to the load lock chamber and the process chamber. The first interior door is between the process chamber and the transfer chamber. When the first interior door is opened, the first accommodating space is communicated with the second accommodating space. The controller is programmed to open the first interior door when the semiconductor baking apparatus idles.

Abstract: A semiconductor baking apparatus includes a load lock chamber, a process chamber, a transfer chamber, a first interior door, and a controller. The process chamber has a first accommodating space therein. The transfer chamber has a second accommodating space therein, and the transfer chamber is connected to the load lock chamber and the process chamber. The first interior door is between the process chamber and the transfer chamber. When the first interior door is opened, the first accommodating space is communicated with the second accommodating space. The controller is programmed to open the first interior door when the semiconductor baking apparatus idles.