Abstract: A vertical memory device includes a first structure having a lower semiconductor pattern structure filling a recess on a substrate and protruding from an upper surface of the substrate in a first direction substantially perpendicular to the upper surface of the substrate, the lower semiconductor pattern structure including a first undoped semiconductor pattern, a doped semiconductor pattern, and a second undoped semiconductor pattern sequentially stacked, and a lower surface of the doped semiconductor pattern being lower than the upper surface of the substrate, and an upper semiconductor pattern extending in the first direction on the lower semiconductor pattern structure, and a plurality of gate electrodes surrounding a sidewall of the first structure, the plurality of gate electrodes being at a plurality of levels, respectively, so as to be spaced apart from each other in the first direction.

Abstract: A semiconductor device may include a plurality of conductive patterns and an insulation pattern. The plurality of conductive patterns may be formed on a substrate. The plurality of conductive patterns may be spaced apart from each other in a vertical direction perpendicular to an upper surface of the substrate. Each of the plurality of conductive patterns may have an extension portion and a step portion. The step portion may be disposed at an edge of the corresponding conductive pattern. The insulation pattern may be formed between the plurality of conductive patterns in the vertical direction. A lower surface and an upper surface of the step portion of each of the plurality of conductive patterns may be bent upwardly.

Abstract: A semiconductor memory device may include: a stacking structure including a plurality of insulating layers and a plurality of gate electrodes alternately stacked on a substrate; a lower semiconductor pattern that protrudes from the top of the substrate; a vertical insulating pattern that extends in a vertical direction from the substrate and penetrates the stacking structure; and a vertical channel pattern on the inner surface of the vertical insulating pattern and contacting the lower semiconductor pattern, wherein an upper part of the lower semiconductor pattern includes a recess region including a curve-shaped profile, and in the recess region, the outer surface of a lower part of the vertical channel pattern contacts the lower semiconductor pattern along a curve of the recess region.

Abstract: A stack structure includes conductive layer patterns and interlayer insulating layer patterns alternately stacked on one another. A channel hole penetrates the stack structure. A dielectric layer is disposed on a sidewall of the channel hole. A channel layer is disposed on the dielectric layer and in the channel hole. A passivation layer is disposed on the channel layer and in the channel hole. The channel layer is interposed between the passivation layer and the dielectric layer. An air gap is surrounded by the passivation layer. A width of the air gap is larger than a width of the passivation layer.

Abstract: An electronic apparatus, including an emissive display configured to provide a first image having a first image quality; a transparent display disposed on the emissive display and configured to provide a second image having a second image quality; and a controller configured to control the emissive display to provide the first image in according to first mode and control the transparent display to provide the second image according to a second mode.

Abstract: Systems and methods in accordance with embodiments of the invention utilize technology to facilitate student question creation. Interactive platforms such as mobile phones or tablets can allow questions to be written, saved, and communicated electronically. In one embodiment, a method for collaboratively generating a question includes generating question data in response to input of a question and answer choices on a first device, sending the question data to a repository, sending the question data from the repository to a second device, displaying the question and answer choices on the second device, generating revised question data in response to input that changes the question, sending the revised question data to the repository, sending the revised question data to a third device, displaying the question and answer choices on the third device, receiving input of the selection of answer choices on the third device, and providing feedback whether the selection is correct.

Abstract: A method and an apparatus for distinguishing radionuclides are disclosed. The method comprises the steps of: receiving energy generated in one or more radioactive elements; applying energy as a weight for each channel to spectrum of the received energy; and distinguishing the one or more radioactive elements on the basis of the spectrum of the spectrum to which the weight is applied. A radioactive element having an energy value corresponding to a peak value of the spectrum of the energy to which the weight is applied, as an energy value of a Compton edge, is distinguished as the one or more radioactive elements. According to the present invention, it is possible to more accurately monitor radiation even while using a plastic scintillator, and further to improve energy resolution of a plastic scintillator.

Abstract: A semiconductor memory device may include: a stacking structure including a plurality of insulating layers and a plurality of gate electrodes alternately stacked on a substrate; a lower semiconductor pattern that protrudes from the top of the substrate; a vertical insulating pattern that extends in a vertical direction from the substrate and penetrates the stacking structure; and a vertical channel pattern on the inner surface of the vertical insulating pattern and contacting the lower semiconductor pattern, wherein an upper part of the lower semiconductor pattern includes a recess region including a curve-shaped profile, and in the recess region, the outer surface of a lower part of the vertical channel pattern contacts the lower semiconductor pattern along a curve of the recess region.

Abstract: A semiconductor device includes a stack structure on a substrate, the stack structure including interlayer insulating layers and first gate electrodes alternately stacked on each other, a semiconductor layer in an opening penetrating through the stack structure, a first dielectric layer between the semiconductor layer and the stack structure, and a lower pattern closer to the substrate than to the first gate electrodes in the stack structure, the lower pattern including a first surface facing the first dielectric layer, and a second surface facing the stack structure, the second surface defining an acute angle with the first surface, wherein the first dielectric layer includes a first portion facing the stack structure, and a second portion facing the first surface of the lower pattern, the second portion having a thickness greater than a thickness of the first portion.

Abstract: An electronic apparatus, including an emissive display configured to provide a first image having a first image quality; a transparent display disposed on the emissive display and configured to provide a second image having a second image quality; and a controller configured to control the emissive display to provide the first image in according to first mode and control the transparent display to provide the second image according to a second mode.

Abstract: A stack structure includes conductive layer patterns and interlayer insulating layer patterns alternately stacked on one another. A channel hole penetrates the stack structure. A dielectric layer is disposed on a sidewall of the channel hole. A channel layer is disposed on the dielectric layer and in the channel hole. A passivation layer is disposed on the channel layer and in the channel hole. The channel layer is interposed between the passivation layer and the dielectric layer. An air gap is surrounded by the passivation layer. A width of the air gap is larger than a width of the passivation layer.

Abstract: A semiconductor device may include a plurality of conductive patterns and an insulation pattern. The plurality of conductive patterns may be formed on a substrate. The plurality of conductive patterns may be spaced apart from each other in a vertical direction perpendicular to an upper surface of the substrate. Each of the plurality of conductive patterns may have an extension portion and a step portion. The step portion may be disposed at an edge of the corresponding conductive pattern. The insulation pattern may be formed between the plurality of conductive patterns in the vertical direction. A lower surface and an upper surface of the step portion of each of the plurality of conductive patterns may be bent upwardly.

Abstract: One aspect of the present invention is to provide an electronic apparatus which is configured to provide a color writing function by means of the physical force of an external input means, and a control method thereof. More particularly, the present invention is to provide an electronic apparatus equipped with a plurality of liquid crystal panels in an electronic apparatus so that a plurality of colors can be written by the physical force of an external input means, and a control method thereof.

Abstract: A cooking apparatus is disclosed. The cooking apparatus according to one exemplary embodiment of the present disclosure comprises: an inner wall for forming a cooking chamber; an outer wall for encompassing the inner wall; a microwave generating part for emitting a microwave at a passage, which is a space surrounded by the inner wall and the outer wall; and an absorbing layer absorbing the microwave to be propagated along the passage, so as to emit an infrared ray at the cooking chamber.

Abstract: Systems and methods in accordance with embodiments of the invention utilize technology to facilitate student question creation. Interactive platforms such as mobile phones or tablets can allow questions to be written, saved, and communicated electronically. In one embodiment, a method for collaboratively generating a question includes generating question data in response to input of a question and answer choices on a first device, sending the question data to a repository, sending the question data from the repository to a second device, displaying the question and answer choices on the second device, generating revised question data in response to input that changes the question, sending the revised question data to the repository, sending the revised question data to a third device, displaying the question and answer choices on the third device, receiving input of the selection of answer choices on the third device, and providing feedback whether the selection is correct.

Abstract: A method and an apparatus for distinguishing radionuclides are disclosed. The method comprises the steps of: receiving energy generated in one or more radioactive elements; applying energy as a weight for each channel to spectrum of the received energy; and distinguishing the one or more radioactive elements on the basis of the spectrum of the spectrum to which the weight is applied. A radioactive element having an energy value corresponding to a peak value of the spectrum of the energy to which the weight is applied, as an energy value of a Compton edge, is distinguished as the one or more radioactive elements. According to the present invention, it is possible to more accurately monitor radiation even while using a plastic scintillator, and further to improve energy resolution of a plastic scintillator.

Abstract: A semiconductor device includes a stack structure on a substrate, the stack structure including interlayer insulating layers and first gate electrodes alternately stacked on each other, a semiconductor layer in an opening penetrating through the stack structure, a first dielectric layer between the semiconductor layer and the stack structure, and a lower pattern closer to the substrate than to the first gate electrodes in the stack structure, the lower pattern including a first surface facing the first dielectric layer, and a second surface facing the stack structure, the second surface defining an acute angle with the first surface, wherein the first dielectric layer includes a first portion facing the stack structure, and a second portion facing the first surface of the lower pattern, the second portion having a thickness greater than a thickness of the first portion.

Abstract: The present disclosure is directed to providing to a smart window system capable of controlling a state of a display element (e.g., at least one of transparency, color, pattern, gradation degree, and displayed information) through various kinds of input devices and a control method thereof. In accordance with one aspect of the present disclosure, a smart window system may include a display element; an input device configured to receive a control command for the display element; and a controller configured to determine at least one of transparency, color, pattern, and gradation of the display element and information displayed on the display element on the basis of the control command.

Abstract: A semiconductor device may include gate electrodes and interlayer insulating layers alternately stacked on a substrate, a channel layer penetrating the gate electrodes and the interlayer insulating layers, a gate dielectric layer between the gate electrodes and the channel layer, a filling insulation that fills at least a portion of an interior of the channel layer, a charge fixing layer between the channel layer and the filling insulation and including a high-k material and/or a metal, and a conductive pad connected to the channel layer and on the filling insulation. The conductive pad may be physically separated from the charge fixing layer.

Abstract: A vertical memory device includes a first structure having a lower semiconductor pattern structure filling a recess on a substrate and protruding from an upper surface of the substrate in a first direction substantially perpendicular to the upper surface of the substrate, the lower semiconductor pattern structure including a first undoped semiconductor pattern, a doped semiconductor pattern, and a second undoped semiconductor pattern sequentially stacked, and a lower surface of the doped semiconductor pattern being lower than the upper surface of the substrate, and an upper semiconductor pattern extending in the first direction on the lower semiconductor pattern structure, and a plurality of gate electrodes surrounding a sidewall of the first structure, the plurality of gate electrodes being at a plurality of levels, respectively, so as to be spaced apart from each other in the first direction.