Abstract: A heat exchanger includes a refrigerant pipe through which a refrigerant flows, and a plurality of fins coupled to an outer circumference surface of the refrigerant pipe, wherein each fin includes a first region disposed upstream with respect to an air flow direction, and a second region which forms a boundary with the first region and is disposed downstream with respect to the air flow direction, and wherein the first region and the second region have different surface energies in order to prevent formation of condensation water on the fin.

Abstract: Non-volatile memory devices, and fabricating methods thereof, include a floating gate over a substrate, a lower barrier layer including a first lower barrier layer on the upper surface of the floating gate, and a second lower barrier layer on a side surface of the floating gate to have a thickness smaller than a thickness of the first lower barrier layer, an inter-gate dielectric layer over the lower barrier layer, and a control gate over the inter-gate dielectric layer.

Abstract: The present invention relates to a technology of reducing nitrogen oxide (NOx) which is harmful discharge gas discharged from an internal combustion engine or a combustor, and to an exhaust gas purification system which inputs solid ammonium salt such as ammonium carbamate or ammonium carbonate into a reactor, thermally decomposes and converts the solid ammonium salt into the ammonia by using engine cooling water, exhaust gas, or an electric heater, which are installed in the reactor, and reduces the nitrogen oxide included in the exhaust pipe on a selective catalytic reduction into nitrogen by injecting the ammonia by using a pressure regulator and a dosing valve.

Abstract: A hydraulic cylinder having a variable cushion orifice is provided, which can simply adjust the size of a cushion orifice hole, which is provided to mitigate impact generated at a stroke end of a cylinder rod, from the outside of the hydraulic cylinder. The hydraulic cylinder having a variable cushion orifice includes a first cushion orifice formed on a head cover, a second cushion orifice communicating with the first cushion orifice and having an inlet formed on an outer side surface of the head cover, a third cushion orifice making the second cushion orifice communicate with a hydraulic flow path formed on the head cover, and a plug for a variable orifice replaceably engaged with the second cushion orifice and having an orifice formed to adjust an amount of hydraulic fluid discharged to the hydraulic flow path through the first cushion orifice at the stroke end of the cylinder rod.

Abstract: A nonvolatile memory device may include: a tunnel insulating layer on a semiconductor substrate; a charge storage layer on the tunnel insulating layer; a blocking insulating layer on the charge storage layer; and a control gate electrode on the blocking insulating layer. The tunnel insulating layer may include a first tunnel insulating layer and a second tunnel insulating layer. The first tunnel insulating layer and the second tunnel insulating layer may be sequentially stacked on the semiconductor substrate. The second tunnel insulating layer may have a larger band gap than the first tunnel insulating layer. A method for fabricating a nonvolatile memory device may include: forming a tunnel insulating layer on a semiconductor substrate; forming a charge storage layer on the tunnel insulating layer; forming a blocking insulating layer on the charge storage layer; and forming a control gate electrode on the blocking insulating layer.

Abstract: A semiconductor device includes gate structures including a tunnel insulating layer pattern, a floating gate, a dielectric layer pattern and a control gate sequentially disposed on a substrate. The control gate includes an impurity doped polysilicon layer pattern and a metal layer pattern. The gate structures are spaced apart from each other on the substrate. A capping layer pattern is disposed on a sidewall portion of the metal layer pattern and includes a metal oxide. An insulating layer covers the gate structures and the capping layer pattern. The insulating layer is formed on the substrate and includes an air-gap therein.

Abstract: An OLED device is disclosed that enhances display quality by minimizing capacitance deviation between data lines of the OLED device. The capacitance deviation may be minimized by utilizing an expansion portion of a power line of the OLED device. The capacitance deviation may also by minimized by utilizing an overlap pattern that overlaps a plurality of the data lines.

Abstract: Non-volatile memory devices, and fabricating methods thereof, include a floating gate over a substrate, a lower barrier layer including a first lower barrier layer on the upper surface of the floating gate, and a second lower barrier layer on a side surface of the floating gate to have a thickness smaller than a thickness of the first lower barrier layer, an inter-gate dielectric layer over the lower barrier layer, and a control gate over the inter-gate dielectric layer.

Abstract: A polarizer of a liquid crystal display device and a method for manufacturing a liquid crystal display device using the same is disclosed. The polarizer includes a main body, a protection film on the main body, and a cutting line formed on the protection film. A method for manufacturing a liquid crystal display device includes providing a liquid crystal panel and a protection film having an active region and a dummy region, the protection film including at least a cutting line in the dummy region or a boundary area between the active region and the dummy region; attaching the protection film to a polarizer; attaching the polarizer to a liquid crystal panel; and, removing the dummy region of the protection film along the cutting line from the liquid crystal panel.

Abstract: A backlight unit for a liquid crystal display device includes: at least one light source; and an inverter circuit part including a dimming test portion generating a dimming signal and turning ON/OFF the at least one light source using the dimming signal.

Abstract: The present invention relates to a photosensitive resin composition, particularly to a photosensitive resin composition for forming an interlayer organic insulating film for TFT-LCD, comprising 0.01 to 20 wt % of UV stabilizer or radical scavenger. The photosensitive resin composition of the present invention can be used for forming an interlayer organic insulating film for TFT-LCD to improve active unfilled area upon over exposure in liquid crystal photo-alignment process, can easily control resolution of pattern, and is particularly suitable for forming a planarization layer of an interlayer organic insulating film.

Abstract: A semiconductor device includes a device isolation layer defining a plurality of active regions of a semiconductor substrate, floating gates and a control gate electrode in which the lowermost part of the electrode is constituted by a metal layer. The control gate electrode crosses over the active regions. The floating gates are disposed between the control gate electrode and the active regions. The tops of the floating gates are disposed at a level above the level of the top of the device isolation layer such that a gap is defined between adjacent ones of the floating gates. A region of the gap is filled with the metal layer of the control gate electrode.

Abstract: A semiconductor device includes gate structures including a tunnel insulating layer pattern, a floating gate, a dielectric layer pattern and a control gate sequentially disposed on a substrate. The control gate includes an impurity doped polysilicon layer pattern and a metal layer pattern. The gate structures are spaced apart from each other on the substrate. A capping layer pattern is disposed on a sidewall portion of the metal layer pattern and includes a metal oxide. An insulating layer covers the gate structures and the capping layer pattern. The insulating layer is formed on the substrate and includes an air-gap therein.

Abstract: In a method of manufacturing a non-volatile memory device, a tunnel insulating layer may be formed on a channel region of a substrate. A charge trapping layer including silicon nitride may be formed on the tunnel insulating layer to trap electrons from the channel region. A heat treatment may be performed using a first gas including nitrogen and a second gas including oxygen to remove defect sites in the charge trapping layer and to densify the charge trapping layer. A blocking layer may be formed on the heat-treated charge trapping layer, and a conductive layer may then formed on the blocking layer. The blocking layer, the conductive layer, the heat-treated charge trapping layer and the tunnel insulating layer may be patterned to form a gate structure on the channel region. Accordingly, data retention performance and/or reliability of a non-volatile memory device including the gate structure may be improved.

Abstract: Provided according to embodiments of the present invention are methods of fabricating semiconductor devices using an etchant. In some embodiments, the etchant may be highly selective and may act to reduce interference between wordlines in the semiconductor device. In some embodiments of the invention, provided are methods of fabricating a semiconductor device that include forming a plurality of gate patterns on a substrate; forming first insulation layers between the gate patterns; wet-etching the first insulation layers to form first insulation layer residues; and forming air gaps between the plurality of gate patterns. Related etchant solutions and semiconductor devices are also provided.

Abstract: A nonvolatile memory device may include: a tunnel insulating layer on a semiconductor substrate; a charge storage layer on the tunnel insulating layer; a blocking insulating layer on the charge storage layer; and a control gate electrode on the blocking insulating layer. The tunnel insulating layer may include a first tunnel insulating layer and a second tunnel insulating layer. The first tunnel insulating layer and the second tunnel insulating layer may be sequentially stacked on the semiconductor substrate. The second tunnel insulating layer may have a larger band gap than the first tunnel insulating layer. A method for fabricating a nonvolatile memory device may include: forming a tunnel insulating layer on a semiconductor substrate; forming a charge storage layer on the tunnel insulating layer; forming a blocking insulating layer on the charge storage layer; and forming a control gate electrode on the blocking insulating layer.

Abstract: A nonvolatile memory device may include: a tunnel insulating layer on a semiconductor substrate; a charge storage layer on the tunnel insulating layer; a blocking insulating layer on the charge storage layer; and a control gate electrode on the blocking insulating layer. The tunnel insulating layer may include a first tunnel insulating layer and a second tunnel insulating layer. The first tunnel insulating layer and the second tunnel insulating layer may be sequentially stacked on the semiconductor substrate. The second tunnel insulating layer may have a larger band gap than the first tunnel insulating layer. A method for fabricating a nonvolatile memory device may include: forming a tunnel insulating layer on a semiconductor substrate; forming a charge storage layer on the tunnel insulating layer; forming a blocking insulating layer on the charge storage layer; and forming a control gate electrode on the blocking insulating layer.

Abstract: Provided is a burner using electric discharge as an ignition source such as arc or plasma rotating with flow, and more particularly, to a DPF regenerating burner that improves ignition performance of the burner by having a metal ball on a conical electrode surface where electricity is discharged, inducing accurate electric discharge through a metal ball, and supplying a fuel-air mixture toward the metal ball. The DPF regeneration burner includes a fuel-air mixture supplying unit having an injecting unit be connected to a reaction unit to supply the fuel-air mixture to the reaction unit; and a metal ball on a circumference of the electrode to ignite the injected fuel-air mixture. The DPF regenerating burner generates electric discharge in an electrode surface where a metal ball is located. The ignition performance is improved by accurately supplying a fuel-air mixture at a location where the electric discharge is generated.

Abstract: The present invention relates to a photosensitive resin composition, particularly to a photosensitive resin composition for forming an interlayer organic insulating film for TFT-LCD, comprising 0.01 to 20 wt % of UV stabilizer or radical scavenger. The photosensitive resin composition of the present invention can be used for forming an interlayer organic insulating film for TFT-LCD to improve active unfilled area upon over exposure in liquid crystal photo-alignment process, can easily control resolution of pattern, and is particularly suitable for forming a planarization layer of an interlayer organic insulating film.

Abstract: A backlight unit for a liquid crystal display device includes: at least one light source; and an inverter circuit part including a dimming test portion generating a dimming signal and turning ON/OFF the at least one light source using the dimming signal.