Patents by Inventor Hongyong Zhang

Hongyong Zhang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7416907
    Abstract: A low temperature process for fabricating a high-performance and reliable semiconductor device in high yield, comprising forming a silicon oxide film as a gate insulator by chemical vapor deposition using TEOS as a starting material under an oxygen, ozone, or a nitrogen oxide atmosphere on a semiconductor coating having provided on an insulator substrate; and irradiating a pulsed laser beam or an intense light thereto to remove clusters of such as carbon and hydrocarbon to thereby eliminate trap centers from the silicon oxide film. Also claimed is a process comprising implanting nitrogen ions into a silicon oxide film and annealing the film thereafter using an infrared light, to thereby obtain a silicon oxynitride film as a gate insulator having a densified film structure, a high dielectric constant, and an improved-withstand voltage.
    Type: Grant
    Filed: July 28, 2004
    Date of Patent: August 26, 2008
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Hongyong Zhang
  • Patent number: 7394516
    Abstract: The present invention related to unifying steps of sealing material so that the yield and the reliability of a liquid-crystal display device become high. A starting film of scanning lines is patterned so that prismatic dummy wirings 301 for the first layer which are not electrically connected are formed in regions R1 and R2, and wirings 302 extending from the pixel section are formed in a region R3, and wirings 303 having connection end portions 303a are formed in a region R4. After an interlayer insulation film is formed on those surface, the starting film of the signal lines is patterned so that the dummy wirings 304 for the second layer are formed to embed the gaps between the wirings 301 to 303, and also the wirings 305 and the wirings 303 which extend from the pixel portion are connected to each other. As a result, the cross-sectional structure along the line A–A? of the sealing material formation region 107 can be unified.
    Type: Grant
    Filed: March 30, 2004
    Date of Patent: July 1, 2008
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventor: Hongyong Zhang
  • Patent number: 7391051
    Abstract: In thin film transistors (TFTs) having an active layer of crystalline silicon adapted for mass production, a catalytic element is introduced into doped regions of an amorphous silicon film by ion implantation or other means. This film is crystallized at a temperature below the strain point of the glass substrate. Further, a gate insulating film and a gate electrode are formed. Impurities are introduced by a self-aligning process. Then, the laminate is annealed below the strain point of the substrate to activate the dopant impurities. On the other hand, Neckel or other element is also used as a catalytic element for promoting crystallization of an amorphous silicon film. First, this catalytic element is applied in contact with the surface of the amorphous silicon film. The film is heated at 450 to 650° C. to create crystal nuclei. The film is further heated at a higher temperature to grow the crystal grains. In this way, a crystalline silicon film having improved crystallinity is formed.
    Type: Grant
    Filed: December 30, 2005
    Date of Patent: June 24, 2008
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Hongyong Zhang, Toru Takayama, Yasuhiko Takemura, Akiharu Miyanaga, Hisashi Ohtani
  • Patent number: 7381599
    Abstract: A TFT formed on an insulating substrate source, drain and channel regions, a gate insulating film formed on at least the channel region and a gate electrode formed on the gate insulating film. Between the channel region and the drain region, a region having a higher resistivity is provided in order to reduce an Ioff current. A method for forming this structure comprises the steps of anodizing the gate electrode to form a porous anodic oxide film on the side of the gate electrode; removing a portion of the gate insulating using the porous anodic oxide film as a mask so that the gate insulating film extends beyond the gate electrode but does not completely cover the source and drain regions. Thereafter, an ion doping of one conductivity element is performed. The high resistivity region is defined under the gate insulating film.
    Type: Grant
    Filed: February 25, 2005
    Date of Patent: June 3, 2008
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Toshimitsu Konuma, Akira Sugawara, Yukiko Uehara, Hongyong Zhang, Atsunori Suzuki, Hideto Ohnuma, Naoaki Yamaguchi, Hideomi Suzawa, Hideki Uochi, Yasuhiko Takemura
  • Patent number: 7371619
    Abstract: In order to obtain a thin-film transistor having high characteristics using a metal element for accelerating the crystallization of silicon, a nickel element is selectively added to the surface of an amorphous silicon film (103) in regions (101) and (102) and regions (108) to (110), and a heat treatment is carried out to grow crystals (horizontal growth) in directions parallel to the substrate as indicated by arrows (104) to (107). At this point, the regions (108) to (110) having a width of 5 ?m or less serve as stopper regions so that horizontal growth starting from the regions (101) and (102) stops there. In this way, the horizontal growth regions can be formed with high controllability. Then a circuit such as a shift register can be constructed with a region having the same crystal growth form.
    Type: Grant
    Filed: March 12, 2001
    Date of Patent: May 13, 2008
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventor: Hongyong Zhang
  • Publication number: 20080106656
    Abstract: In a liquid crystal display device, gate lines and common lines are first concurrently formed, and after an interlayer film is formed, a pixel electrode, common electrodes, and source lines are formed at the same time. By this, a electrode pattern can be made simple and manufacturing steps are simplified. Further, wiring lines and electrode disposed in the layer closest to a liquid crystal layer are made the pixel electrode, common electrodes and source lines, and the shapes thereof are made simple.
    Type: Application
    Filed: December 18, 2007
    Publication date: May 8, 2008
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Hongyong Zhang, Yoshiharu Hirakata, Kenji Otsuka, Shunpei Yamazaki, Hideaki Kuwabara
  • Patent number: 7368367
    Abstract: A preparing method of a semiconductor, particularly a preparing method of a polycrystal semiconductor film which has a good electrical property is disclosed. In order to obtain a non-crystalline silicon film containing a lot of combination of hydrogen and silicon, a forming process of a non-crystalline silicon film by a low temperature gas phase chemical reaction, a process of a heat annealing to produce a lot of dangling bonds of silicon, so as to draw out hydrogen from said non-crystalline silicon film, and a process of applying a laser irradiation to said non-crystal silicon film having a lot of dangling bond of silicon are conducted.
    Type: Grant
    Filed: August 1, 2005
    Date of Patent: May 6, 2008
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Hongyong Zhang, Naoto Kusumoto
  • Patent number: 7355202
    Abstract: A gate-insulated thin film transistor is disclosed. One improvement is that the thin film transistor is formed on a substrate through a blocking layer in between so that it is possible to prevent the transistor from being contaminated with impurities such as alkali ions which exist in the substrate. Also, a halogen is added to either or both of the blocking layer and a gate insulator of the transistor.
    Type: Grant
    Filed: August 18, 2003
    Date of Patent: April 8, 2008
    Assignee: Semiconductor Energy Co., Ltd.
    Inventors: Hongyong Zhang, Shunpei Yamazaki
  • Patent number: 7352003
    Abstract: An electro-optical device, such as a camera, includes a display unit having a thin film transistor including a source region, a drain region, a channel region formed between the source and drain regions, and a LDD region formed between the channel region and at least one of the source and drain regions. The LDD region may include first and second regions having different impurity concentrations. An impurity concentration may change continuously in the LDD region.
    Type: Grant
    Filed: August 16, 2004
    Date of Patent: April 1, 2008
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventor: Hongyong Zhang
  • Patent number: 7348954
    Abstract: A liquid crystal display includes a display part displaying an image in accordance with image display data supplied through data signal lines, and a driving part driving the data signal lines by using a plurality of driving devices simultaneously for each data signal line.
    Type: Grant
    Filed: December 17, 2001
    Date of Patent: March 25, 2008
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Hirokazu Miwa, Hiromi Enomoto, Hongyong Zhang
  • Patent number: 7335950
    Abstract: To provide a thin film transistor having a low OFF characteristic and to provide P-channel type and N-channel type thin film transistors where a difference in characteristics of the P-channel type and the N-channel type thin film transistors is corrected, a region 145 having a P-type behavior more potential than that of a drain region 146 is arranged between a channel forming region 134 and the drain region 146 in the P-channel type thin film transistor whereby the P-channel type thin film transistor having the low OFF characteristic can be provided and a low concentration impurity region 136 is arranged between a channel forming region 137 and a drain region 127 in the N-channel type thin film transistor whereby the N-channel type thin film transistor having the low OFF characteristic and where deterioration is restrained can be provided.
    Type: Grant
    Filed: October 8, 2004
    Date of Patent: February 26, 2008
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Hongyong Zhang, Satoshi Teramoto
  • Publication number: 20080044962
    Abstract: A semiconductor device having a pair of impurity doped second semiconductor layers, formed on a first semiconductor layer having a channel formation region therein, an outer edge of the first semiconductor film being at least partly coextensive with an outer edge of the impurity doped second semiconductor layers. The semiconductor device further includes source and drain electrodes formed on the pair of impurity doped second semiconductor layers, wherein the pair of impurity doped second semiconductor layers extend beyond inner sides edges of the source and drain electrodes so that a stepped portion is formed from an upper surface of the source and drain electrodes to a surface of the first semiconductor film.
    Type: Application
    Filed: September 17, 2007
    Publication date: February 21, 2008
    Applicant: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Hongyong Zhang, Naoto Kusumoto
  • Patent number: 7333172
    Abstract: The present invention related to unifying steps of sealing material so that the yield and the reliability of a liquid-crystal display device become high. A starting film of scanning lines is patterned so that prismatic dummy wirings 301 for the first layer which are not electrically connected are formed in regions R1 and R2, and wirings 302 extending from the pixel section are formed in a region R3, and wirings 303 having connection end portions 303a are formed in a region R4. After an interlayer insulation film is formed on those surface, the starting film of the signal lines is patterned so that the dummy wirings 304 for the second layer are formed to embed the gaps between the wirings 301 to 303, and also the wirings 305 and the wirings 303 which extend from the pixel portion are connected to each other. As a result, the cross-sectional structure along the line A-A? of the sealing material formation region 107 can be unified.
    Type: Grant
    Filed: May 21, 1999
    Date of Patent: February 19, 2008
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventor: Hongyong Zhang
  • Patent number: 7333160
    Abstract: An electronic device having an active matrix liquid crystal device comprising a sealing layer with a region overlapping an insulating film formed over another insulating film, which extends beyond said insulating film and forms on a peripheral switching device, a region in contact with said another insulating film, and a region where said second insulating film is not formed over said another insulating film.
    Type: Grant
    Filed: June 9, 2003
    Date of Patent: February 19, 2008
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Hongyong Zhang, Shunpei Yamazaki, Satoshi Teramoto, Yoshiharu Hirakata
  • Patent number: 7333169
    Abstract: In a liquid crystal display device, gate lines and common lines are first concurrently formed, and after an interlayer film is formed, a pixel electrode, common electrodes, and source lines are formed at the same time. By this, a electrode pattern can be made simple and manufacturing steps are simplified. Further, wiring lines and electrode disposed in the layer closest to a liquid crystal layer are made the pixel electrode, common electrodes and source lines, and the shapes thereof are made simple.
    Type: Grant
    Filed: December 29, 2003
    Date of Patent: February 19, 2008
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Hongyong Zhang, Yoshiharu Hirakata, Kenji Otsuka, Shunpei Yamazaki, Hideaki Kuwabara
  • Patent number: 7329906
    Abstract: A low temperature process for fabricating a high-performance and reliable semiconductor device in high yield, comprising forming a silicon oxide film as a gate insulator by chemical vapor deposition using TEOS as a starting material under an oxygen, ozone, or a nitrogen oxide atmosphere on a semiconductor coating having provided on an insulator substrate; and irradiating a pulsed laser beam or an intense light thereto to remove clusters of such as carbon and hydrocarbon to thereby eliminate trap centers from the silicon oxide film. Also claimed is a process comprising implanting nitrogen ions into a silicon oxide film and annealing the film thereafter using an infrared light, to thereby obtain a silicon oxynitride film as a gate insulator having a densified film structure, a high dielectric constant, and an improved-withstand voltage.
    Type: Grant
    Filed: December 22, 2004
    Date of Patent: February 12, 2008
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Hongyong Zhang
  • Publication number: 20080020518
    Abstract: A laminated spacer portion formed by laminating various thin films that constitute thin-film transistors is disposed in peripheral driver circuits. As a result, even in a structure in which part of a sealing member is disposed above the peripheral driver circuits, pressure exerted from spacers in the sealing member is concentrated on the laminated spacer portion, whereby destruction of a thin-film transistor of the peripheral driver circuits can be prevented caused by the pressure from the sealing portion.
    Type: Application
    Filed: July 24, 2007
    Publication date: January 24, 2008
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Hongyong Zhang, Satoshi Teramoto
  • Publication number: 20080020554
    Abstract: [Purpose] It is an object to obtain a crystalline silicon film having preferable characteristics for a thin film transistor. [Structure] A crystalline silicon film having improved crystallinity is obtained by the following steps: forming a silicon nitride film substantially in contact with an amorphous silicon film on glass substrate; introducing a catalyst element such as nickel; performing an annealing treatment at a temperature of 500 to 600° C. for crystallization; and further irradiating it with a laser light, thereby a crystalline silicon film having improved crystallinity can be obtained. By using the crystalline silicon film thus obtained, a semiconductor device such as a TFT having improved characteristic can be obtained.
    Type: Application
    Filed: June 6, 2007
    Publication date: January 24, 2008
    Inventors: Hisashi Ohtani, Akiharu Miyanaga, Hongyong Zhang, Naoaki Yamaguchi
  • Publication number: 20080006828
    Abstract: A display device using a novel semiconductor device, which includes a pixel matrix, an image sensor, and a peripheral circuit for driving those, that is, which has both a camera function and a display function, and is made intelligent, is provided and a method of manufacturing the same is also provided. One pixel includes a semiconductor device for display and a semiconductor for light reception, that is, one pixel includes semiconductor devices (insulated gate-type field effect semiconductor device) for controlling both display and light reception, so that the display device having a picture reading function is made miniaturized and compact.
    Type: Application
    Filed: September 4, 2007
    Publication date: January 10, 2008
    Applicant: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Hongyong Zhang, Masayuki Sakakura, Hideaki Kuwabara
  • Publication number: 20070290246
    Abstract: To fabricate an active matrix type display device integrated with an image sensor at a low cost and without complicating process, an image sensor laminated with TFT and a light receiving unit is formed on a light receiving matrix, a display matrix is arranged with TFT and pixel electrodes on a matrix and formed with an electrode layer functioning as a black matrix, a lower electrode of the light receiving unit is formed by a starting film the same as that of the black matrix, a terminal for fixing potential of an upper electrode is formed by starting films the same as those of a signal line, the electrode layer or pixel electrodes and the terminals function also as shield electrodes for a side face of the light receiving unit since potential thereof is fixed.
    Type: Application
    Filed: August 14, 2007
    Publication date: December 20, 2007
    Inventors: Hongyong Zhang, Masayuki Sakakura, Yurika Satou