Patents by Inventor Hongyong Zhang

Hongyong Zhang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20120034766
    Abstract: A process for fabricating a highly stable and reliable semiconductor, comprising: coating the surface of an amorphous silicon film with a solution containing a catalyst element capable of accelerating the crystallization of the amorphous silicon film, and heat treating the amorphous silicon film thereafter to crystallize the film.
    Type: Application
    Filed: August 15, 2011
    Publication date: February 9, 2012
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Hisashi OHTANI, Akiharu MIYANAGA, Takeshi FUKUNAGA, Hongyong ZHANG
  • Publication number: 20110309369
    Abstract: Techniques are provided for unifying steps of sealing material so that the yield and the reliability of a liquid-crystal display device become high. A starting film of scanning lines is patterned so that prismatic dummy wirings 301 for the first layer which are not electrically connected are formed in regions R1 and R2, and wirings 302 extending from the pixel section are formed in a region R3, and wirings 303 having connection end portions 303a are formed in a region R4. After an interlayer insulation film is formed, the starting film of the signal lines is patterned so that the dummy wirings 304 for the second layer are formed to embed the gaps between the wirings 301 to 303, and also the wirings 305 and the wirings 303 which extend from the pixel portion are connected to each other. This permits unification of the cross-sectional structure of the sealing material formation region.
    Type: Application
    Filed: June 6, 2011
    Publication date: December 22, 2011
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventor: Hongyong ZHANG
  • Patent number: 8062935
    Abstract: A method for manufacturing a semiconductor device such as a thin film transistor using a crystal silicon film is provided. The crystal silicon film is obtained by selectively forming films, particles or clusters containing nickel, iron, cobalt, ruthenium, rhodium, paradium, osmium, iridium, platinum, scandium, titanium, vanadium, chrome, manganese, copper, zinc, gold, silver or silicide thereof in a form of island, line, stripe, dot or film on or under an amorphous silicon film and using them as a starting point, by advancing its crystallization by annealing at a temperature lower than a normal crystallization temperature of an amorphous silicon. A transistor whose leak current is low and a transistor in which a mobility is high are obtained in the same time in structuring a dynamic circuit having a thin film transistor by selectively forming a cover film an a semiconductor layer which is to become an active layer of the transistor and by thermally crystallizing it thereafter.
    Type: Grant
    Filed: October 15, 2009
    Date of Patent: November 22, 2011
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Hongyong Zhang, Hideki Uochi, Toru Takayama, Takeshi Fukunaga, Yasuhiko Takemura
  • Publication number: 20110278584
    Abstract: A laminated spacer portion formed by laminating various thin films that constitute thin-film transistors is disposed in peripheral driver circuits. As a result, even in a structure in which part of a sealing member is disposed above the peripheral driver circuits, pressure exerted from spacers in the sealing member is concentrated on the laminated spacer portion, whereby destruction of a thin-film transistor of the peripheral driver circuits can be prevented caused by the pressure from the sealing portion.
    Type: Application
    Filed: July 26, 2011
    Publication date: November 17, 2011
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Hongyong Zhang, Satoshi Teramoto
  • Patent number: 8031307
    Abstract: A liquid crystal display apparatus containing an image sensor, which comprises a liquid crystal display part comprising an active matrix circuit, a peripheral driver circuit for driving the active matrix circuit, and a sensor part, integrated on one substrate, wherein the sensor part is sealed and protected with a sealing part and a counter substrate.
    Type: Grant
    Filed: October 18, 2010
    Date of Patent: October 4, 2011
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Hongyong Zhang, Masayuki Sakakura
  • Patent number: 8017506
    Abstract: A thin film transistor device reduced substantially in resistance between the source and the drain by incorporating a silicide film, which is fabricated by a process comprising forming a gate insulator film and a gate contact on a silicon substrate, anodically oxidizing the gate contact, covering an exposed surface of the silicon semiconductor with a metal and irradiating an intense light such as a laser beam to the metal film either from the upper side or from an insulator substrate side to allow the metal coating to react with silicon to obtain a silicide film. The metal silicide layer may be obtained otherwise by tightly adhering a metal coating to the exposed source and drain regions using an insulator formed into an approximately triangular shape, preferably 1 ?m or less in width, and allowing the metal to react with silicon.
    Type: Grant
    Filed: October 23, 2009
    Date of Patent: September 13, 2011
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Yasuhiko Takemura, Hongyong Zhang, Satoshi Teramoto
  • Patent number: 7998844
    Abstract: A process for fabricating a highly stable and reliable semiconductor, comprising: coating the surface of an amorphous silicon film with a solution containing a catalyst element capable of accelerating the crystallization of the amorphous silicon film, and heat treating the amorphous silicon film thereafter to crystallize the film.
    Type: Grant
    Filed: July 15, 2008
    Date of Patent: August 16, 2011
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Hisashi Ohtani, Akiharu Miyanaga, Takeshi Fukunaga, Hongyong Zhang
  • Patent number: 7990514
    Abstract: A laminated spacer portion formed by laminating various thin films that constitute thin-film transistors is disposed in peripheral driver circuits. As a result, even in a structure in which part of a sealing member is disposed above the peripheral driver circuits, pressure exerted from spacers in the sealing member is concentrated on the laminated spacer portion, whereby destruction of a thin-film transistor of the peripheral driver circuits can be prevented caused by the pressure from the sealing portion.
    Type: Grant
    Filed: January 27, 2010
    Date of Patent: August 2, 2011
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Hongyong Zhang, Satoshi Teramoto
  • Patent number: 7985635
    Abstract: A laser annealing process for recovering crystallinity of a deposited semiconductor film such as of silicon which had undergone morphological damage, said process comprising activating the semiconductor by irradiating a pulsed laser beam operating at a wavelength of 400 nm or less and at a pulse width of 50 nsec or less onto the surface of the film, wherein, said deposited film is coated with a transparent film such as a silicon oxide film at a thickness of from 3 to 300 nm, and the laser beam incident to said coating is applied at an energy density E (mJ/cm2) provided that it satisfies the relation: log10 N??0.02(E?350), where N is the number of shots of the pulsed laser beam.
    Type: Grant
    Filed: December 30, 2005
    Date of Patent: July 26, 2011
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Hongyong Zhang, Hiroaki Ishihara
  • Publication number: 20110163315
    Abstract: The present invention provides an active matrix type display device having a high aperture ratio and a required auxiliary capacitor. A source line and a gate line are overlapped with part of a pixel electrode. This overlapped region functions to be a black matrix. Further, an electrode pattern made of the same material as the pixel electrode is disposed to form the auxiliary capacitor by utilizing the pixel electrode. It allows a required value of auxiliary capacitor to be obtained without dropping the aperture ratio. Also, it allows the electrode pattern to function as a electrically shielding film for suppressing the cross-talk between the source and gate lines and the pixel electrode.
    Type: Application
    Filed: December 30, 2010
    Publication date: July 7, 2011
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Hongyong Zhang, Satoshi Teramoto
  • Patent number: 7956978
    Abstract: Techniques are provided for unifying steps of sealing material so that the yield and the reliability of a liquid-crystal display device become high. A starting film of scanning lines is patterned so that prismatic dummy wirings 301 for the first layer which are not electrically connected are formed in regions R1 and R2, and wirings 302 extending from the pixel section are formed in a region R3, and wirings 303 having connection end portions 303a are formed in a region R4. After an interlayer insulation film is formed, the starting film of the signal lines is patterned so that the dummy wirings 304 for the second layer are formed to embed the gaps between the wirings 301 to 303, and also the wirings 305 and the wirings 303 which extend from the pixel portion are connected to each other. This permits unification of the cross-sectional structure of the sealing material formation region.
    Type: Grant
    Filed: July 1, 2008
    Date of Patent: June 7, 2011
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventor: Hongyong Zhang
  • Patent number: 7952097
    Abstract: A method for improving the reliability and yield of a thin film transistor by controlling the crystallinity thereof. The method comprises the steps of forming a gate electrode on an island amorphous silicon film, injecting an impurity using the gate electrode as a mask, forming a coating film containing at least one of nickel, iron, cobalt, platinum and palladium so that it adheres to parts of the impurity regions, and annealing it at a temperature lower than the crystallization temperature of pure amorphous silicon to advance the crystallization starting therefrom and to crystallize the impurity regions and channel forming region.
    Type: Grant
    Filed: July 31, 2001
    Date of Patent: May 31, 2011
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Yasuhiko Takemura, Hongyong Zhang
  • Publication number: 20110121325
    Abstract: There are disclosed TFTs having improved reliability. An interlayer dielectric film forming the TFTs is made of a silicon nitride film. Other interlayer dielectric films are also made of silicon nitride. The stresses inside the silicon nitride films forming these interlayer dielectric films are set between ?5×109 and 5×109 dyn/cm2. This can suppress peeling of the interlayer dielectric films and difficulties in forming contact holes. Furthermore, release of hydrogen from the active layer can be suppressed. In this way, highly reliable TFTs can be obtained.
    Type: Application
    Filed: November 19, 2010
    Publication date: May 26, 2011
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Hongyong Zhang, Satoshi Teramoto
  • Patent number: 7943930
    Abstract: In thin film transistors (TFTs) having an active layer of crystalline silicon adapted for mass production, a catalytic element is introduced into doped regions of an amorphous silicon film by ion implantation or other means. This film is crystallized at a temperature below the strain point of the glass substrate. Further, a gate insulating film and a gate electrode are formed. Impurities are introduced by a self-aligning process. Then, the laminate is annealed below the strain point of the substrate to activate the dopant impurities. On the other hand, Neckel or other element is also used as a catalytic element for promoting crystallization of an amorphous silicon film. First, this catalytic element is applied in contact with the surface of the amorphous silicon film. The film is heated at 450 to 650° C. to create crystal nuclei. The film is further heated at a higher temperature to grow the crystal grains. In this way, a crystalline silicon film having improved crystallinity is formed.
    Type: Grant
    Filed: June 20, 2008
    Date of Patent: May 17, 2011
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Hongyong Zhang, Toru Takayama, Yasuhiko Takemura, Akiharu Miyanaga, Hisashi Ohtani
  • Publication number: 20110101362
    Abstract: A semiconductor device having a pair of impurity doped second semiconductor layers, formed on a first semiconductor layer having a channel formation region therein, an outer edge of the first semiconductor film being at least partly coextensive with an outer edge of the impurity doped second semiconductor layers. The semiconductor device further includes source and drain electrodes formed on the pair of impurity doped second semiconductor layers, wherein the pair of impurity doped second semiconductor layers extend beyond inner sides edges of the source and drain electrodes so that a stepped portion is formed from an upper surface of the source and drain electrodes to a surface of the first semiconductor film.
    Type: Application
    Filed: January 10, 2011
    Publication date: May 5, 2011
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Hongyong ZHANG, Naoto KUSUMOTO
  • Publication number: 20110100688
    Abstract: In a liquid crystal display device, gate lines and common lines are first concurrently formed, and after an interlayer film is formed, a pixel electrode, common electrodes, and source lines are formed at the same time. By this, a electrode pattern can be made simple and manufacturing steps are simplified. Further, wiring lines and electrode disposed in the layer closest to a liquid crystal layer are made the pixel electrode, common electrodes and source lines, and the shapes thereof are made simple.
    Type: Application
    Filed: January 7, 2011
    Publication date: May 5, 2011
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Hongyong Zhang, Yoshiharu Hirakata, Kenji Otsuka, Shunpei Yamazaki, Hideaki Kuwabara
  • Patent number: 7923311
    Abstract: A semiconductor device having a pair of impurity doped second semiconductor layers, formed on a first semiconductor layer having a channel formation region therein, an outer edge of the first semiconductor film being at least partly coextensive with an outer edge of the impurity doped second semiconductor layers. The semiconductor device further includes source and drain electrodes formed on the pair of impurity doped second semiconductor layers, wherein the pair of impurity doped second semiconductor layers extend beyond inner sides edges of the source and drain electrodes so that a stepped portion is formed from an upper surface of the source and drain electrodes to a surface of the first semiconductor film.
    Type: Grant
    Filed: September 17, 2007
    Date of Patent: April 12, 2011
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Hongyong Zhang, Naoto Kusumoto
  • Publication number: 20110068339
    Abstract: A TFT formed on an insulating substrate source, drain and channel regions, a gate insulating film formed on at least the channel region and a gate electrode formed on the gate insulating film. Between the channel region and the drain region, a region having a higher resistivity is provided in order to reduce an Ioff current. A method for forming this structure comprises the steps of anodizing the gate electrode to form a porous anodic oxide film on the side of the gate electrode; removing a portion of the gate insulating using the porous anodic oxide film as a mask so that the gate insulating film extends beyond the gate electrode but does not completely cover the source and drain regions. Thereafter, an ion doping of one conductivity element is performed. The high resistivity region is defined under the gate insulating film.
    Type: Application
    Filed: December 2, 2010
    Publication date: March 24, 2011
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Toshimitsu KONUMA, Akira SUGAWARA, Yukiko UEHARA, Hongyong ZHANG, Atsunori SUZUKI, Hideto OHNUMA, Naoaki YAMAGUCHI, Hideomi SUZAWA, Hideki UOCHI, Yasuhiko TAKEMURA
  • Publication number: 20110032462
    Abstract: A liquid crystal display apparatus containing an image sensor, which comprises a liquid crystal display part comprising an active matrix circuit, a peripheral driver circuit for driving the active matrix circuit, and a sensor part, integrated on one substrate, wherein the sensor part is sealed and protected with a sealing part and a counter substrate.
    Type: Application
    Filed: October 18, 2010
    Publication date: February 10, 2011
    Inventors: Hongyong Zhang, Masayuki Sakakura
  • Patent number: 7868984
    Abstract: In a liquid crystal display device, gate lines and common lines are first concurrently formed, and after an interlayer film is formed, a pixel electrode, common electrodes, and source lines are formed at the same time. By this, a electrode pattern can be made simple and manufacturing steps are simplified. Further, wiring lines and electrode disposed in the layer closest to a liquid crystal layer are made the pixel electrode, common electrodes and source lines, and the shapes thereof are made simple.
    Type: Grant
    Filed: December 18, 2007
    Date of Patent: January 11, 2011
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Hongyong Zhang, Yoshiharu Hirakata, Kenji Otsuka, Shunpei Yamazaki, Hideaki Kuwabara