Patents by Inventor Hongyu Wang

Hongyu Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6347446
    Abstract: A Silicon carbide-silicon matrix composite having improved oxidation resistance at high temperatures in dry or water-containing environments is provided. A method is given for sealing matrix cracks in situ in melt infiltrated silicon carbide-silicon matrix composites. The composite cracks are sealed by the addition of various additives, such as boron compounds, into the melt infiltrated silicon carbide-silicon matrix.
    Type: Grant
    Filed: June 3, 1999
    Date of Patent: February 19, 2002
    Assignee: General Electric Company
    Inventors: Krishan Lal Luthra, Hongyu Wang
  • Patent number: 6312763
    Abstract: A barrier layer for a silicon containing substrate which inhibits the formation of gaseous species of silicon when exposed to a high temperature aqueous environment comprises a yttrium silicate.
    Type: Grant
    Filed: November 16, 2000
    Date of Patent: November 6, 2001
    Assignees: United Technologies Corporation, General Electric Co., NASA
    Inventors: Harry Edwin Eaton, Jr., William Patrick Allen, Nathan S. Jacobson, Kang N. Lee, Elizabeth J. Opila, James L. Smialek, Hongyu Wang, Peter Joel Meschter, Krishan Lal Luthra
  • Patent number: 6299988
    Abstract: An article comprises a silicon-containing substrate and an external environmental/thermal barrier coating. The external environmental/thermal barrier coating is permeable to diffusion of an environmental oxidant and the silicon-containing substrate is oxidizable by reaction with oxidant to form at least one gaseous product. The article comprises an intermediate layer/coating between the silicon-containing substrate and the environmental/thermal barrier coating that is oxidizable to a nongaseous product by reaction with the oxidant in preference to reaction of the silicon-containing substrate with the oxidant. A method of forming an article, comprises forming a silicon-based substrate that is oxidizable by reaction with oxidant to at least one gaseous product and applying an intermediate layer/coating onto the substrate, wherein the intermediate layer/coating is oxidizable to a nongaseous product by reaction with the oxidant in preference to reaction of the silicon-containing substrate with the oxidant.
    Type: Grant
    Filed: April 26, 1999
    Date of Patent: October 9, 2001
    Assignee: General Electric Company
    Inventors: Hongyu Wang, Krishan Lal Luthra
  • Patent number: 6296909
    Abstract: A process for depositing a mullite coating on a silicon-based material, such as those used to form articles exposed to high temperatures and including the hostile thermal environment of a gas turbine engine. The process is generally to thermally spray a mullite powder to form a mullite layer on a substrate, in which the thermal spraying process is performed so that the mullite powder absorbs a sufficient low level of energy from the thermal source to prevent evaporation of silica from the mullite powder. Processing includes deposition parameter adjustments or annealing to maintain or reestablish phase equilibrium in the mullite layer, so that through-thickness cracks in the mullite layer are avoided.
    Type: Grant
    Filed: May 11, 2000
    Date of Patent: October 2, 2001
    Assignee: General Electric Company
    Inventors: Irene T. Spitsberg, Hongyu Wang, Raymond W. Heidorn
  • Patent number: 6296942
    Abstract: A barrier layer for a silicon containing substrate which inhibits the formation of gaseous species of silicon when exposed to a high temperature aqueous environment comprises a calcium alumino silicate.
    Type: Grant
    Filed: April 15, 1999
    Date of Patent: October 2, 2001
    Assignees: General Electric Company, United Technologies Corporation, NASA
    Inventors: Harry Edwin Eaton, Jr., William Patrick Allen, Robert Alden Miller, Nathan S. Jacobson, James L. Smialek, Elizabeth J. Opila, Kang N. Lee, Bangalore A. Nagaraj, Hongyu Wang, Peter Joel Meschter, Krishan Lal Luthra
  • Patent number: 6296941
    Abstract: A barrier layer for a silicon containing substrate which inhibits the formation of gaseous species of silicon when exposed to a high temperature aqueous environment comprises a yttrium silicate.
    Type: Grant
    Filed: April 15, 1999
    Date of Patent: October 2, 2001
    Assignees: General Electric Company, United Technologies Corporation, NASA
    Inventors: Harry Edwin Eaton, Jr., William Patrick Allen, Nathan S. Jacobson, Kang N. Lee, Elizabeth J. Opila, James L. Smialek, Hongyu Wang, Peter Joel Meschter, Krishan Lal Luthra
  • Patent number: 6291224
    Abstract: This invention relates to newly identified polynucleotides and polypeptides, variants and derivatives of same; methods for making the polynucleotides, polypeptides, variants, derivatives and antagonists. In particular the invention relates to polynucleotides and polypeptides of the phytate metabolic pathway.
    Type: Grant
    Filed: September 29, 2000
    Date of Patent: September 18, 2001
    Assignee: Pioneer Hi-Bred International, Inc.
    Inventors: Susan J. Martino-Catt, Hongyu Wang, Larry R. Beach, Xun Wang, Benjamin A. Bowen
  • Patent number: 6284325
    Abstract: A barrier layer for a silicon containing substrate which inhibits the formation of gaseous species of silicon when exposed to a high temperature aqueous environment comprises a calcium alumino silicate.
    Type: Grant
    Filed: November 16, 2000
    Date of Patent: September 4, 2001
    Assignees: General Electric Company, United Technologies Corporation, The United States of America as represented by the United States National Aeronautics and Space Administration
    Inventors: Harry Edwin Eaton, Jr., William Patrick Allen, Robert Alden Miller, Nathan S. Jacobson, James L. Smialek, Elizabeth J. Opila, Kang N. Lee, Bangalore A. Nagaraj, Hongyu Wang, Peter Joel Meschter, Krishan Lal Luthra
  • Patent number: 6197561
    Abstract: This invention relates to newly identified polynucleotides and polypeptides, variants and derivatives of same; methods for making the polynucleotides, polypeptides, variants, derivatives and antagonists. In particular the invention relates to polynucleotides and polypeptides of the phytate metabolic pathway.
    Type: Grant
    Filed: July 17, 1998
    Date of Patent: March 6, 2001
    Assignee: Pioneer Hi-Bred International, Inc.
    Inventors: Susan J. Martino-Catt, Hongyu Wang, Larry R. Beach, Xun Wang, Benjamin A. Bowen
  • Patent number: 6129954
    Abstract: A process for depositing a mullite coating on a silicon-based material, such as those used to form articles exposed to high temperatures and including the hostile thermal environment of a gas turbine engine. The process is generally to thermally spray a mullite powder to form a mullite layer on a substrate, in which the thermal spraying process is performed so that the mullite powder absorbs a sufficient low level of energy from the thermal source to prevent evaporation of silica from the mullite powder. Processing includes deposition parameter adjustments or annealing to maintain or reestablish phase equilibrium in the mullite layer, so that through-thickness cracks in the mullite layer are avoided.
    Type: Grant
    Filed: December 22, 1998
    Date of Patent: October 10, 2000
    Assignee: General Electric Company
    Inventors: Irene T. Spitsberg, Hongyu Wang, Raymond W. Heidorn
  • Patent number: 5985470
    Abstract: A coating system for a substrate containing a silicon-based material, such as silicon carbide-containing ceramic matrix materials containing silicon carbide and used to form articles exposed to high temperatures, including the hostile thermal environment of a gas turbine engine. The coating system includes a layer of barium strontium aluminosilicate (BSAS) as a bond coat for a thermal-insulating top coat. As a bond coat, the BSAS layer serves to adhere the top coat to a SiC-containing substrate. The BSAS bond coat exhibits sufficient environmental resistance such that, if the top coat should spall, the BSAS bond coat continues to provide a level of environmental protection to the underlying SiC-containing substrate.
    Type: Grant
    Filed: March 16, 1998
    Date of Patent: November 16, 1999
    Assignee: General Electric Company
    Inventors: Irene T. Spitsberg, Hongyu Wang
  • Patent number: 5962103
    Abstract: A Silicon carbide-silicon matrix composite having improved oxidation resistance at high temperatures in dry or water-containing environments is provided. A method is given for sealing matrix cracks in situ in melt infiltrated silicon carbide-silicon matrix composites. The composite cracks are sealed by the addition of various additives, such as boron compounds, into the melt infiltrated silicon carbide-silicon matrix.
    Type: Grant
    Filed: January 13, 1997
    Date of Patent: October 5, 1999
    Assignee: General Electric Company
    Inventors: Krishan Lal Luthra, Hongyu Wang