Abstract: A system and method for using a sensor includes a first anode and cathode pair having a first non-zero voltage therebetween and an ionic liquid contacting the first anode and cathode pair. An output is provided that communicates a motion sense signal corresponding to a motion or pressure of the sensor in at least one direction that causes a change in a first ionic concentration gradient between the first anode and cathode pair.

Abstract: The present invention discloses a small-grain three-dimensional memory (3D-MSG). Each of its memory cells comprises a thin-film diode with critical dimension no larger than 40 nm. The thin-film diode comprises at least a small-grain material, whose grain size G is substantially smaller than the diode size D. The small-grain material is preferably a nano-crystalline material or an amorphous material. The critical dimension f of the small-grain diode is smaller than the critical dimension F of the single-crystalline transistor.

Abstract: An origami enabled manufacturing system. The system uses origami design principles to create functional materials, structures, devices and/or systems having an adjustable size and/or shape. An operational device can be coupled to a planar substrate shaped and sized to correspond to a desired origami shape of an origami pattern. A plurality of planar substrates can be coupled together by a plurality of connection members that corresponds to one or more crease of the origami pattern. An array of planar substrates can be formed that convert into a three dimensional structure with origami shape. The resulting three-dimensional structure provides smaller projection area, higher portability and deformability.

Abstract: A dynamic and refreshable three-dimensional tactile display uses stimulus sensitive hydrogel blocks as pixels to create a touch surface with elevations from a two-dimensional optical image or from stored data. The movable three-dimensional tactiles are powerful in teaching Science, Technology, Engineering, and Mathematics (STEM) materials to visually impaired and blind students.

Abstract: The present invention discloses a small-grain three-dimensional memory (3D-MSG). Each of its memory cells comprises a thin-film diode with critical dimension no larger than 40 nm. The thin-film diode comprises at least a small-grain material, whose grain size G is substantially smaller than the diode size D. The small-grain material is preferably a nano-crystalline material or an amorphous material. The critical dimension f of the small-grain diode is smaller than the critical dimension F of the single-crystalline transistor.

Abstract: The present invention relates generally to the detection of alcohol. The present invention relates more particularly to the film bulk acoustic wave resonator-based devices, and their use in the sensing of ethanol and/or acetone. One aspect of the invention is a method for detecting ethanol, acetone or both in a gaseous sample including: providing a film bulk acoustic wave resonator having a zinc oxide piezoelectric layer; exposing the film bulk acoustic wave resonator to the gaseous sample; determining the resonant frequency of the film bulk acoustic wave resonator; and determining the concentration of ethanol, the concentration of acetone, or both in the gaseous sample using the resonant frequency of the film bulk acoustic wave resonator.

Abstract: The present invention relates generally to the detection of high energy radiation. The present invention relates more particularly to the film bulk acoustic wave resonator-based devices, and their use in the detection of high energy radiation. One aspect of the invention is a method for detecting high energy radiation, the method comprising providing a film bulk acoustic wave resonator having a zinc oxide piezoelectric layer in substantial contact with a dielectric layer; exposing the film bulk acoustic wave resonator to the high energy radiation; determining the resonant frequency of the film bulk acoustic wave resonator; and determining the dose of high energy radiation using the resonant frequency of the film bulk acoustic wave resonator.

Abstract: A dual work function semiconductor device and method for fabricating the same are disclosed. In one aspect, a device includes a first and second transistor on a first and second substrate region. The first and second transistors include a first gate stack having a first work function and a second gate stack having a second work function respectively. The first and second gate stack each include a host dielectric, a gate electrode comprising a metal layer, and a second dielectric capping layer therebetween. The second gate stack further has a first dielectric capping layer between the host dielectric and metal layer. The metal layer is selected to determine the first work function. The first dielectric capping layer is selected to determine the second work function.

Abstract: The present invention relates generally to the detection of high energy radiation. The present invention relates more particularly to the film bulk acoustic wave resonator-based devices, and their use in the detection of high energy radiation. One aspect of the invention is a method for detecting high energy radiation, the method comprising providing a film bulk acoustic wave resonator having a zinc oxide piezoelectric layer in substantial contact with a dielectric layer; exposing the film bulk acoustic wave resonator to the high energy radiation; determining the resonant frequency of the film bulk acoustic wave resonator; and determining the dose of high energy radiation using the resonant frequency of the film bulk acoustic wave resonator.

Abstract: The present invention relates generally to the detection of alcohol. The present invention relates more particularly to the film bulk acoustic wave resonator-based devices, and their use in the sensing of ethanol and/or acetone. One aspect of the invention is a method for detecting ethanol, acetone or both in a gaseous sample including: providing a film bulk acoustic wave resonator having a zinc oxide piezoelectric layer; exposing the film bulk acoustic wave resonator to the gaseous sample; determining the resonant frequency of the film bulk acoustic wave resonator; and determining the concentration of ethanol, the concentration of acetone, or both in the gaseous sample using the resonant frequency of the film bulk acoustic wave resonator.

Abstract: A dual work function semiconductor device and method for fabricating the same are disclosed. In one aspect, a device includes a first and second transistor on a first and second substrate region. The first and second transistors include a first gate stack having a first work function and a second gate stack having a second work function respectively. The first and second gate stack each include a host dielectric, a gate electrode comprising a metal layer, and a second dielectric capping layer therebetween. The second gate stack further has a first dielectric capping layer between the host dielectric and metal layer. The metal layer is selected to determine the first work function. The first dielectric capping layer is selected to determine the second work function.

Abstract: A micromachined sensor for measuring vascular parameters, such as fluid shear stress, includes a substrate having a front-side surface, and a backside surface opposite the front-side surface. The sensor includes a diaphragm overlying a cavity etched within the substrate, and a heat sensing element disposed on the front-side surface of the substrate and on top of the cavity and the diaphragm. The heat sensing element is electrically couplable to electrode leads formed on the backside surface of the substrate. The sensor includes an electronic system connected to the backside surface and configured to measure a change in heat convection from the sensing element to surrounding fluid when the sensing element is heated by applying an electric current thereto, and further configured to derive from the change in heat convection vascular parameters such as the shear stress of fluid flowing past the sensing element.

Abstract: A micromachined sensor for measuring vascular parameters, such as fluid shear stress, includes a substrate having a front-side surface, and a backside surface opposite the front-side surface. The sensor includes a diaphragm overlying a cavity etched within the substrate, and a heat sensing element disposed on the front-side surface of the substrate and on top of the cavity and the diaphragm. The heat sensing element is electrically couplable to electrode leads formed on the backside surface of the substrate. The sensor includes an electronic system connected to the backside surface and configured to measure a change in heat convection from the sensing element to surrounding fluid when the sensing element is heated by applying an electric current thereto, and further configured to derive from the change in heat convection vascular parameters such as the shear stress of fluid flowing past the sensing element.

Abstract: A non-volatile memory device having a control gate on top of the second dielectric (interpoly or blocking dielectric), at least a bottom layer of the control gate in contact with the second dielectric being constructed in a material having a predefined high work-function and showing a tendency to reduce its work-function when in contact with a group of certain high-k materials after full device fabrication. At least a top layer of the second dielectric, separating the bottom layer of the control gate from the rest of the second dielectric, is constructed in a predetermined high-k material, chosen outside the group for avoiding a reduction in the work-function of the material of the bottom layer of the control gate. In the manufacturing method, the top layer is created in the second dielectric before applying the control gate.

Abstract: A method is provided for fabricating a semiconductor device. A semiconductor substrate is provided. A first high-k dielectric layer is formed on the semiconductor substrate. A first treatment is performed on the high-k dielectric layer. In an embodiment, the treatment includes a UV radiation in the presence of O2 and/or O3. A second high-k dielectric layer is formed on the treated first high-k dielectric layer. A second treatment is performed on the second high-k dielectric layer. In an embodiment, the high-k dielectric layer forms a gate dielectric layer of a field effect transistor.

Abstract: A method for manufacturing a dual workfunction semiconductor device and the device made thereof are disclosed. In one aspect, the method includes manufacturing a first transistor in a first region and a second transistor in a second region of a substrate, the first transistor including a first gate stack, the first gate stack having a first gate dielectric capping layer and a first metal gate electrode layer. The second gate stack is similar to the first gate stack. The method includes applying a first thermal budget to the first gate dielectric capping layer and a second thermal budget to the second gate dielectric capping material to tune the workfunction of the first and second gate stack, the first thermal budget being smaller than the second thermal budget such that after the thermal treatment the first and the second gate stack have different work functions.

Abstract: A dual workfunction semiconductor device and a device made thereof is disclosed. In one aspect, the device includes a first gate stack in a first region and a second gate stack in a second region. The first gate stack has a first effective workfunction, and the second gate stack has a second effective workfunction different from the first effective workfunction. The first gate stack includes a first gate dielectric capping layer, a gate dielectric host layer, a first metal gate electrode layer, a barrier metal gate electrode, a second gate dielectric capping layer, and a second metal gate electrode. The second gate stack includes a gate dielectric host layer, a first metal gate electrode, a second gate dielectric capping layer, and a second metal gate electrode.

Abstract: A non-volatile memory device having a control gate on top of the second dielectric (interpoly or blocking dielectric), at least a bottom layer of the control gate in contact with the second dielectric being constructed in a material having a predefined high work-function and showing a tendency to reduce its work-function when in contact with a group of certain high-k materials after full device fabrication. At least a top layer of the second dielectric, separating the bottom layer of the control gate from the rest of the second dielectric, is constructed in a predetermined high-k material, chosen outside the group for avoiding a reduction in the work-function of the material of the bottom layer of the control gate. In the manufacturing method, the top layer is created in the second dielectric before applying the control gate.

Abstract: A semiconductor device is disclosed that comprises a fully silicided electrode formed of an alloy of a semiconductor material and a metal, a workfunction modulating element for modulating a workfunction of the alloy, and a dielectric in contact with the fully silicided electrode. At least a part of the dielectric which is in direct contact with the fully silicided electrode comprises a stopping material for substantially preventing the workfunction modulating element from implantation into and/or diffusing towards the dielectric. A method for forming such a semiconductor device is also disclosed.

Abstract: Techniques, apparatus and systems that use an acoustic transducer with a Fresnel lens to focus an acoustic wave for various applications, including acoustic droplet ejectors.