Abstract: A semiconductor memory device includes a cell unit including a stack structure and a channel structure penetrating through the stack structure, the stack structure including at least one string selection gate and a plurality of cell gates, cell separation structures separating the cell unit in a first direction, and gate cutting structures defining regions within the cell unit between adjacent cell separation structures. The cell unit includes a first region defined between a first cell separation structure and a first gate cutting structure and a second region defined between the first gate cutting structure and a second gate cutting structure. A ratio of a region of the at least one string selection gate that is occupied by a conductive material in the second region is greater than a ratio of a region of at least one cell gate that is occupied by the conductive material in the second region.

Abstract: A semiconductor memory device includes; a lower stacked structure including lower metallic lines stacked in a first direction on a substrate, an upper stacked structure including a first upper metallic line and a second upper metallic line sequentially stacked on the lower stacked structure, a vertical structure penetrating the upper stacked structure and lower stacked structure and including a channel film, a connection pad disposed on the vertical structure, contacted with the channel film and doped with N-type impurities, a first cutting line cutting the lower metallic lines, the first upper metallic line and the second upper metallic line, a second cutting line spaced apart from the first cutting line in a second direction different from the first direction, and cutting the lower metallic lines, the first upper metallic line and the second upper metallic line, and sub-cutting lines cutting the first upper metallic line and the second upper metallic line between the first cutting line and the second cuttin

Abstract: The present invention provides a method for measuring a distribution of pores in an electrode for a secondary battery, which can easily measure a distribution of pores inside the electrode for a secondary battery.

Abstract: An exercise assistance method of assisting user's exercise based on ground inclination, a wearable device and an electronic device for performing the same are provided. The exercise assistance method may include determining ground inclination in a direction in which a wearable device worn by the user moves based on sensor data, determining whether a ground surface in the direction in which the wearable device moves is downward inclination or upward inclination based on the ground inclination, when the ground surface is the downward inclination or the upward inclination, determining target exercise speed to achieve a target exercise amount of an exercise program performed by the wearable device based on the ground inclination, and adjusting at least one of current target exercise speed set to the exercise program and current exercise intensity set to the exercise program based on the determined target exercise speed.

Abstract: A semiconductor memory device includes a substrate including a cell region, a core region, and a boundary region between the cell region and the core region, a boundary element isolation layer in the boundary region, the boundary element isolation layer being in a boundary element isolation recess and including first and second boundary liner layers extending along a profile of the boundary element isolation recess and a first gate structure on the core region and at least a part of the boundary element isolation layer, wherein the first gate structure includes a first high dielectric layer, and a first gate insulating pattern below the first high dielectric layer, with a top surface of the substrate being a base reference level, the first gate insulating pattern does not overlap a top surface of the first boundary liner layer, and wherein the first gate insulating pattern includes a first_1 gate insulating pattern between a top surface of the second boundary liner layer and a bottom surface of the first high

Abstract: Methods of depositing a film are provided. The methods may include providing a substrate that includes a first surface and a second surface adjacent to the first surface; forming a polymer sacrificial layer on the first surface by using a molecular layer deposition (MLD) process; forming a first film on the second surface; and removing the polymer sacrificial layer formed on the first surface. A functional group density of the first surface may be higher than a functional group density of the second surface, and the polymer sacrificial layer may include a thermally decomposable polymer.

Abstract: A method of providing an augmented reality (AR) content in a vehicle, and/or a wearable AR device and an electronic device for performing a method.

Abstract: A semiconductor device includes a lower stack structure that includes a lower word line, an upper stack structure that is on the lower stack structure and includes an upper word line, a decoder that is adjacent to the lower stack structure and the upper stack structure, a signal interconnection that is connected to the decoder, a lower selector that is connected to the signal interconnection and further connected to the lower word line, and an upper selector that is connected to the signal interconnection, isolated from direct contact with the lower selector, and further connected to the upper word line.

Abstract: A semiconductor memory device includes a substrate including a device isolation film defining active regions; and cell gate structures in trenches, including first areas and second areas, the cell gate structures extending to intersect the active regions, each of the cell gate structures includes a cell gate insulating layer, extending along inner sidewalls of the trenches, a first gate dielectric film, on sidewalls of the cell gate insulating layer, in a first area of the trench, a second gate dielectric film, on the sidewalls of the cell gate insulating layer, in a second area of the trench, and a cell gate electrode structure, including a first gate electrode layer on sidewalls of the first gate dielectric film and a second gate electrode layer on sidewalls of the second gate dielectric film in the second area.

Abstract: A lithium-sulfur battery having high energy density and a method for manufacturing the same are provided. The lithium-sulfur battery at depth of discharge (DOD) 15% to DOD 80% includes a compound having three or more characteristic peaks of diffraction angles (2? values) of X-ray diffraction (XRD) patterns selected from 7.1±0.2°, 9.0±0.2°, 9.4±0.2°, 9.6±0.2°, 9.9±0.2°, 10.0±0.2°, 10.4±0.2°, 11.0±0.2°, 11.6±0.2°, 12.1±0.2°, 13.3±0.2°, 14.5±0.2° and 15.0±0.2°.

Abstract: A fastening structure for a vehicular mounting system includes: a mount core including an inner core and coupled to a vehicle body by being fixed thereto, a center bolt protruding in an upward direction from the inner core, and a support bracket mounted on the inner core in such a manner as to come into contact therewith. The support bracket is fastened to the mount core using the center bolt and coupled to a powertrain of a vehicle by being fixed thereto. In particular, the center bolt passes through the inside of the support bracket, and a mounting seating surface, on which the support bracket is seated, is formed on an upper surface of the inner core. The mounting seating surface includes a counterforce angle formation portion.

Abstract: A positioning arm apparatus for an ultrasound head is provided. The positioning arm apparatus for an ultrasound head according to an embodiment may constantly move the ultrasound head without change in height of the ultrasound head according to a moving distance by simultaneous rotation at two positions and tilting motion at one position. Also, the positioning arm apparatus may be miniaturized and lightweight since it is operated with a mechanical mechanism, and may provide strong fixing strong and easy maneuverability.

Abstract: A sandwich type end plate supporting at least one end of a battery module in which a plurality of battery cells are stacked, the sandwich type end plate comprises: a first outer skin layer configured as a plate provided in a direction toward the plurality of battery cells, a second outer skin layer configured as a plate provided in a direction opposite to the plurality of battery cells and a core module including at least one core layer configured as a plate provided between the first outer skin layer and the second outer skin layer, wherein a core layer of the at least one core layer has a larger stiffness toward a direction in which the plurality of battery cells are stacked than the first outer skin layer and the second outer skin layer, and the at least one core layer protrudes toward the second outer skin layer.

Abstract: A lithium-sulfur battery capable of retaining excellent energy density and capacity even when discharged at a fast rate and a method of manufacturing the same are provided. The lithium-sulfur battery has a ratio of an amount of lithium sulfide (Li2S) present at 100% depth of discharge state (DoD 100) of the lithium-sulfur battery discharged at 1.0 C to an amount of lithium sulfide (Li2S) present at DoD 100 of the lithium-sulfur battery discharged at 0.5 C of 80% or more.

Abstract: Proposed is a method of controlling a hybrid electric vehicle. In particular, the method includes: connecting a first motor directly connected with an engine with a second motor directly connected with an input end of a transmission, and determining whether to distribute an amount of error torque for the engine to the first motor or each of the first motor and the second motor on the basis of an efficiency of the first motor and an efficiency of the second motor.

Abstract: A method for managing data center failures, executed by one or more processors of a leader management node, includes allocating a first data node among a first plurality of data nodes a master data node, the first plurality of data nodes being in a first data center, allocating a second data node among the first plurality of data nodes as a first backup data node, allocating one among a second plurality of data nodes as a second backup data node, the second plurality of data nodes being in a second data center, and the first data center and the second data center being located in different regions, and setting a data replication mode between the master data node, the first backup data node and the second backup data node, the data replication mode being selected from a set of modes including a first mode and a second mode.

Abstract: A spatial image projection device includes a housing, a display unit that is accommodated in the housing and configured to output a hologram image, a half-mirror configured to project a spatial image corresponding to the hologram image inside the housing, and a first polarizing film that is disposed outside the housing and configured to block a part of light directed toward a viewer from the housing.

Abstract: An ultrasonic transmission circulation system of an ultrasound treatment head and method therefor are provided. In the system and the method therefor according to an embodiment, the supply, discharge, and circulation of the ultrasonic transmission medium with respect to the ultrasound treatment head are all possible by means of a single pump. Further, in the system and the method therefor according to an embodiment, a single system is driven by changing a passage through selective opening and closing of the valves in the system according to the material of a membrane, so that there is no need to drive a separate system for each membrane material.