Abstract: A semiconductor memory device includes a substrate including a cell region, a core region, and a boundary region between the cell region and the core region, a boundary element isolation layer in the boundary region, the boundary element isolation layer being in a boundary element isolation recess and including first and second boundary liner layers extending along a profile of the boundary element isolation recess and a first gate structure on the core region and at least a part of the boundary element isolation layer, wherein the first gate structure includes a first high dielectric layer, and a first gate insulating pattern below the first high dielectric layer, with a top surface of the substrate being a base reference level, the first gate insulating pattern does not overlap a top surface of the first boundary liner layer, and wherein the first gate insulating pattern includes a first_1 gate insulating pattern between a top surface of the second boundary liner layer and a bottom surface of the first high

Abstract: Disclosed is a hybrid electric vehicle and a method for controlling a creep torque for the hybrid electric vehicle that includes: a first motor connected to an engine, a second motor directly connected to a transmission input terminal, and an engine clutch connected to an engine shaft and the second motor. The method for controlling a creep torque includes: determining an expected charging power that is expected when a target creep torque is generated through a regenerative braking of the second motor; discharging a battery by idling the engine with the first motor while the engine clutch is open when an expected charging power is equal to or greater than a battery charging limit power; and generating the target creep torque via the regenerative braking of the second motor.

Abstract: A semiconductor memory device comprises a substrate, first and second lower electrode groups on the substrate and including a plurality of first and second lower electrodes, respectively, and first and second support patterns on side walls of and connecting each of the first and second lower electrodes, respectively. The first lower electrodes include a first center lower electrode arranged within a hexagonal shape defined by first edge lower electrodes. The second lower electrodes include a second center lower electrode arranged within a hexagonal shape defined by second edge lower electrodes. The first center lower electrode is spaced apart from each of the first edge lower electrodes in different first to third directions. The first support pattern is immediately adjacent to the second support pattern. The first center lower electrode is spaced apart from the second center lower electrode in a fourth direction different from the first to third directions.

Abstract: A method of controlling an electrified vehicle may include determining a traveling environment level; determining a regenerative braking continuation range and a regenerative braking retention amount according to the traveling environment level when a preset deceleration condition is satisfied; and determining whether to maintain a regenerative braking amount as the regenerative braking retention amount based on whether a vehicle speed is included in the regenerative braking continuation range when the vehicle speed is lower than or equal to a preset regenerative braking termination vehicle speed.

Abstract: Disclosed are an electronic terminal apparatus and an operating method thereof. The present invention relates to an electronic terminal apparatus equipped with a UI development tool, which is able to provide an automatic UI component creation function through an image analysis of a UI design plan, and an operating method thereof.

Abstract: The present invention relates to a graft copolymer, and to a core-shell type graft copolymer comprising: a core comprising a rubbery polymer; and a shell formed by graft polymerizing a graft monomer to the rubbery polymer, wherein the graft copolymer comprises the core in 72 wt % to 83 wt %, the core has an average particle diameter of 250 nm or more, and the shell has a weight average molecular weight of 40,000 g/mol or less, a curable resin composition including the same, and methods of preparing them.

Abstract: A nonvolatile memory device includes a mold structure having a stack of word lines on a substrate and first and second string selection lines on the word lines, a first cutting structure through the mold structure, a second cutting structure through the mold structure, the second cutting structure being spaced apart from the first cutting structure, a channel structure penetrating the mold structure to be connected to the substrate, the channel structure being between the first and second cutting structures, a first cutting line cutting through the first string selection line but not through the second string selection line, the first cutting line being between the first and second cutting structures, and a second cutting line cutting through the second string selection line but not through the first string selection line, the second cutting line being between the second cutting structure and the channel structure.

Abstract: A semiconductor memory device includes; a lower stacked structure including lower metallic lines stacked in a first direction on a substrate, an upper stacked structure including a first upper metallic line and a second upper metallic line sequentially stacked on the lower stacked structure, a vertical structure penetrating the upper stacked structure and lower stacked structure and including a channel film, a connection pad disposed on the vertical structure, contacted with the channel film and doped with N-type impurities, a first cutting line cutting the lower metallic lines, the first upper metallic line and the second upper metallic line, a second cutting line spaced apart from the first cutting line in a second direction different from the first direction, and cutting the lower metallic lines, the first upper metallic line and the second upper metallic line, and sub-cutting lines cutting the first upper metallic line and the second upper metallic line between the first cutting line and the second cuttin

Abstract: A circuit board including a contact terminal on a side thereof, a method of fabricating the circuit board, and an electronic device including the circuit board are provided. The circuit board includes: a base layer; a wiring layer formed on the base layer; and a terminal section formed at a level corresponding to the wiring layer, on a first surface and a side surface of one end portion of the base layer.

Abstract: The moving assembly for a recovery guard includes a recovery vessel, including a first recovery vessel surrounding a substrate support, a second recovery vessel, and a lifting driver connected to the first and second recovery vessels and elevating the first and second recovery vessels. The lifting driver includes a first motor and a second motor, a first shaft connected to the first motor and the first recovery vessel and moving in a first direction by driving the first motor, a second shaft connected to the second motor and the second recovery vessel and moving in the first direction by driving the second motor, a first connecting portion connecting the first shaft and the first recovery vessel, and a second connecting portion connecting the second shaft and the second recovery vessel, the second connecting portion including a passage hole through which the first shaft passes.

Abstract: There is disclosed an augmented reality (AR) glasses device including: a camera, a transparent display, a communication circuit, a memory storing images of a plurality of external electronic devices, and a processor. The processor may be configured to control the AR glasses device to: acquire an image including an image of at least one external electronic device, acquire running application information of the at least one external electronic device, identify a first external electronic device corresponding to a gaze from among the at least one external electronic device from the acquired image, determine whether a specified application is running in the first external electronic device based on the running application information, and connect to the first external electronic device using a communication circuit, based on the specified application running.

Abstract: A roof rack apparatus for a vehicle includes a roof rack mounting bracket, a roof rack stanchion, a roof rack side rail, and a roof rack pad, such that it is possible to ensure structural durability further improved by a fastening force between an insert bolt and a bracket fixing bolt at the time of assembling the roof rack apparatus with a vehicle body. The roof rack mounting bracket is symmetric in a forward/rearward direction and a leftward/rightward direction with respect to a center of the insert bolt, such that the roof rack apparatus may be used in common. An operator may replace the roof rack with a new roof rack without detaching an interior material (head lining) in the vehicle, such that it is possible to prevent damage to the interior material at the time of replacing and repairing the roof rack.

Abstract: A semiconductor device includes a gate stack including a gate insulating layer and a gate electrode on the gate insulating layer. The gate insulating layer includes a first dielectric layer and a second dielectric layer on the first dielectric layer, and a dielectric constant of the second dielectric layer is greater than a dielectric constant of the first dielectric layer. The semiconductor device also includes a first spacer on a side surface of the gate stack, and a second spacer on the first spacer, wherein the second spacer includes a protruding portion extending from a level lower than a lower surface of the first spacer towards the first dielectric layer, and a dielectric constant of the second spacer is greater than the dielectric constant of the first dielectric layer and less than a dielectric constant of the first spacer.

Abstract: In a layer deposition method, a substrate is loaded into a process chamber. A gas filling tank is charged with a gas to a predetermined charge pressure. The pressure of the gas is elevated to a pressure greater than the predetermined charge pressure. The gas is introduced into the process chamber.

Abstract: The present invention provides a method for manufacturing a high-nickel positive electrode active material comprising the steps of preparing a raw material containing nickel and cobalt; separating a liquid intermediate by leaching a metal component in the pulverized raw material using an acid and removing impurities; and co-precipitating a precursor of a positive electrode active material by adding a chelating agent and a hydroxide precipitant to the liquid intermediate.

Abstract: Proposed is a method of controlling a hybrid electric vehicle. In particular, the method includes: connecting a first motor directly connected with an engine with a second motor directly connected with an input end of a transmission, and determining whether to distribute an amount of error torque for the engine to the first motor or each of the first motor and the second motor on the basis of an efficiency of the first motor and an efficiency of the second motor.

Abstract: A hybrid electric vehicle and a method of driving control for same, which more effectively increases an amount of regenerative braking during deceleration and allows a rapid restart. A method for controlling a hybrid electric vehicle, including a step-variable transmission according to an embodiment of the present disclosure, may include an operation of prohibiting shifting when a preconfigured deceleration braking condition is satisfied. The method may further include an operation of slip-controlling an engine clutch disposed between an engine and a driving motor when an acceleration pedal is operated before a car stop holding time, in which the deceleration braking condition is maintained, exceeds a preconfigured reference time.

Abstract: A method of manufacturing a semiconductor device is provided. The method includes providing a first layer having a first surface and a second layer having a second surface orthogonal to the first surface in a vertical direction, forming an inhibitor layer conformally on the first surface and the second surface, exposing the second surface by selectively removing the inhibitor layer on the second surface among the first surface and the second surface, the exposing of the second surface may include selectively removing an edge portion of the inhibitor layer on the first surface, the edge portion contacting the second surface, and forming an interest layer on the exposed second surface.

Abstract: A semiconductor device includes a lower stack structure that includes a lower word line, an upper stack structure that is on the lower stack structure and includes an upper word line, a decoder that is adjacent to the lower stack structure and the upper stack structure, a signal interconnection that is connected to the decoder, a lower selector that is connected to the signal interconnection and further connected to the lower word line, and an upper selector that is connected to the signal interconnection, isolated from direct contact with the lower selector, and further connected to the upper word line.