Abstract: A method for fabricating packaged semiconductor devices is disclosed. In one example the method comprises providing a plurality of semiconductor dies, the semiconductor dies being arranged in an array on a carrier such that a first side of the semiconductor dies faces the carrier and such that an empty space is arranged laterally besides each semiconductor die. A substrate comprising a plurality of conductive elements is arranged over the plurality of semiconductor dies such that a conductive element is arranged in the respective empty space besides each one of the semiconductor dies. The plurality of semiconductor dies are molded over to form a molded body, and singulating packaged semiconductor devices from the molded body by cutting through the molded body.

Abstract: A sensor device contains at least one sensor chip having at least one MEMS structure arranged at a main surface of the at least one sensor chip, wherein the at least one sensor chip is configured to transmit ultrasonic signals and/or to receive ultrasonic signals. The sensor device further contains an acoustic coupling medium arranged selectively on the at least one MEMS structure, wherein the acoustic coupling medium is configured to decouple an ultrasonic signal to be emitted from the at least one MEMS structure and/or to inject a received ultrasonic signal into the at least one MEMS structure. The acoustic coupling medium only partially covers the main surface of the at least one sensor chip.

Abstract: A method is disclosed. In one example, the method includes bonding a first panel of a first material to a base panel in a first gas atmosphere, wherein multiple hermetically sealed first cavities encapsulating gas of the first gas atmosphere are formed between the first panel and the base panel. The method further includes bonding a second panel of a second material to at least one of the base panel and the first panel, wherein multiple second cavities are formed between the second panel and the at least one of the base panel and the first panel.

Abstract: Device with ultrasonic transducer and method for manufacturing same. A device is provided, having an ultrasonic transducer, which includes a membrane and a cover element. A coupling medium entirely fills an interspace between the membrane and the cover element, and extends from the interspace into a reservoir space which communicates with the interspace.

Abstract: A current sensor system includes a magnetic field sensor including a chip plane, a first set of sensor elements sensitive to a first magnetic field component that is aligned in a first direction that is parallel to the chip plane, and a second set of sensor elements sensitive to a second magnetic field component that is aligned in a second direction that is perpendicular to the chip plane; and three conductor structures arranged in parallel to each other and configured to carry a current parallel or antiparallel to a third direction that is perpendicular to the first direction and to the second direction. The three conductor structures generate three magnetic fields based on the current flowing therethrough, where the three magnetic fields produce a first magnetic field distribution of the first magnetic field component and a second magnetic field distribution of the second magnetic field component.

Abstract: A method is disclosed. In one example, the method includes bonding a first panel of a first material to a base panel in a first gas atmosphere, wherein multiple hermetically sealed first cavities encapsulating gas of the first gas atmosphere are formed between the first panel and the base panel. The method further includes bonding a second panel of a second material to at least one of the base panel and the first panel, wherein multiple second cavities are formed between the second panel and the at least one of the base panel and the first panel.

Abstract: A method is provided for producing a hermetically sealed housing having a semiconductor component. The method comprises introducing a housing having a housing body and a housing cover into a process chamber. The housing cover closes off a cavity of the housing body and is attached in a gas-tight manner to the housing body. At least one opening is formed in the housing. At least one semiconductor component is arranged in the cavity. The method furthermore comprises generating a vacuum in the cavity by evacuating the process chamber, and also generating a predetermined gas atmosphere in the cavity and the process chamber. The method moreover comprises applying sealing material to the at least one opening while the predetermined gas atmosphere prevails in the process chamber.

Abstract: A method for producing sensor devices includes generating a semiconductor wafer having a plurality of sensor chips, wherein each sensor chip comprises a micro-electromechanical systems (MEMS) structure arranged at a main surface of the semiconductor wafer; forming a plurality of gas-permeable covers over the main surface of the semiconductor wafer, wherein each gas-permeable cover covers a corresponding MEMS structure of the MEMS structures and forms a cavity above the corresponding MEMS structure; and singulating the semiconductor wafer into a plurality of sensor devices.

Abstract: An ultrasonic touch sensor includes: a covering having a contact face configured to receive a touch; a first ultrasonic transducer element; a first semiconductor chip comprising the first ultrasonic transducer element; a second ultrasonic transducer element; and an acoustic barrier formed between the first ultrasonic transducer element and the second ultrasonic transducer element.

Abstract: A sensor device includes a sensor chip with a micro-electromechanical systems (MEMS) structure, wherein the MEMS structure is arranged at a main surface of the sensor chip, and a gas-permeable cover arranged over the main surface of the sensor chip, which covers the MEMS structure and forms a cavity above the MEMS structure.

Abstract: A semiconductor device comprises a first semiconductor chip, a first planar waveguide transmission line arranged within a BEOL metal stack of the first semiconductor chip, wherein the first planar waveguide transmission line comprises line sections situated opposite one another, and a second planar waveguide transmission line arranged over the first semiconductor chip and electrically coupled to the first planar waveguide transmission line, wherein the second planar waveguide transmission line comprises line sections situated opposite one another.

Abstract: An ultrasonic transducer includes at least one ultrasonic transducer element, a semiconductor chip that includes the ultrasonic transducer element, and a housing. The semiconductor chip is arranged in the housing. The semiconductor chip is embedded in a dimensionally stable encapsulation, wherein a contact surface of the dimensionally stable encapsulation is configured for acoustically coupling the ultrasonic transducer to a casing. Additionally, an ultrasonic transducer system and a method for fitting the ultrasonic transducer or ultrasonic transducer system are provided.

Abstract: A photoacoustic sensor includes a first layer with an optical MEMS emitter; a second layer stacked over the first layer with a MEMS pressure pick-up and an optically transparent window, wherein the MEMS pressure pick-up and the optically transparent window are offset laterally with respect to one another; and a third layer stacked over the second layer with a cavity for a reference gas. The optical MEMS emitter transmits optical radiation along an optical path, wherein the optical path runs through the optically transparent window and the cavity for the reference gas, and wherein the MEMS pressure pick-up is outside the course of the optical path.

Abstract: A sensor device contains a first magnetic field sensor chip having a first sensor element. The first magnetic field sensor chip is configured to detect a component of a magnetic field at the location of the first sensor element. The sensor device contains a second magnetic field sensor chip having a second sensor element. The second magnetic field sensor chip is configured to detect a component of a magnetic field at the location of the second sensor element. The sensor device contains a current conductor configured to carry a measurement current that induces a magnetic field at the locations of the sensor elements. The magnetic field sensor chips and the current conductor are arranged relative to one another in such a way that an influence of a homogeneous magnetic stray field on the first components is compensated for upon difference formation or summation applied to the first components.

Abstract: A method for producing a semiconductor component is proposed. The method includes providing a housing. At least one semiconductor chip is arranged in a cavity of the housing. Furthermore, an electrical contact of the semiconductor chip is connected to an electrical contact of the housing via a bond wire. The method furthermore includes applying a protective material on the electrical contact of the housing and also on a region of the bond wire which is adjacent to the electrical contact of the housing. Moreover, the method also includes filling at least one partial region of the cavity with a gel.

Abstract: An ultrasonic touch sensor includes: a covering having a contact face configured to receive a touch; a first ultrasonic transducer element; a first semiconductor chip comprising the first ultrasonic transducer element; a second ultrasonic transducer element; and an acoustic barrier formed between the first ultrasonic transducer element and the second ultrasonic transducer element.

Abstract: A method of forming a semiconductor package includes providing a panel, providing one or more metal layers on an upper surface of the panel, forming a die pad and bond pads from the one or more metal layers, the die pad being adjacent to and spaced apart from the bond pads, attaching a die to the die pad, forming electrical connections between the die and the bond pads, encapsulating the die and the electrical connections with an electrically insulating mold compound, removing portions of the panel, and exposing the die pad and the bond pads after encapsulating the die.

Abstract: A photoacoustic sensor includes a first MEMS device and a second MEMS device. The first MEMS device includes a first MEMS component including an optical emitter, and a first optically transparent cover wafer-bonded to the first MEMS component, wherein the first MEMS component and the first optically transparent cover form a first closed cavity. The second MEMS device includes a second MEMS component including a pressure detector, and a second optically transparent cover wafer-bonded to the second MEMS component, wherein the second MEMS component and the second optically transparent cover form a second closed cavity.

Abstract: An apparatus for in-situ calibration of a photoacoustic sensor includes a measurement device configured to measure an electric signal at an IR emitter of the photoacoustic sensor, wherein the IR emitter generates an electromagnetic spectrum based on the electric signal; and a calibration unit including processing circuitry, configured to compare the electric signal with a comparison value to generate a comparison result used as calibration information. When performing the in-situ calibration, the calibration unit is configured to adjust the electric signal based on the calibration information, or the calibration unit is configured to process an output signal of the photoacoustic sensor based on the calibration information to obtain an adjusted output signal of the photoacoustic sensor.

Abstract: The present disclosure relates to an inductive angle and/or position sensor comprising a first sensor component and a second sensor component, which is movable relative thereto, wherein the first sensor component comprises an excitation coil and a receiving coil arrangement having two or more individual receiving coils, and wherein the second sensor component comprises an inductive target. The first sensor component comprises a semiconductor chip having an integrated circuit. The sensor comprises a housing, in which the semiconductor chip is arranged. The individual receiving coils of the receiving coil arrangement are configured in at least two structured metallization layers spaced apart from one another, which are arranged within the housing and/or outside on an outer surface of the housing.