Abstract: A transducer structure is disclosed. The transducer structure may include a substrate with a MEMS structure located on a first side of the substrate and a lid coupled to the first side of the substrate and covering the MEMS structure. The substrate may include an electric contact which is laterally displaced from the lid on the first side of the substrate and electrically coupled to the MEMS structure.

Abstract: A photoacoustic sensor includes a first layer with an optical MEMS emitter; a second layer stacked over the first layer with a MEMS pressure pick-up and an optically transparent window, wherein the MEMS pressure pick-up and the optically transparent window are offset laterally with respect to one another; and a third layer stacked over the second layer with a cavity for a reference gas. The optical MEMS emitter transmits optical radiation along an optical path, wherein the optical path runs through the optically transparent window and the cavity for the reference gas, and wherein the MEMS pressure pick-up is outside the course of the optical path.

Abstract: The present disclosure is related to a photoacoustic sensor modular assembly. An example interconnect module includes a support structure configured to be situated between an emitter module of the photoacoustic sensor and a detector module of the photoacoustic sensor. The emitter module may include an emitter component and the detector module may include a detector component. The interconnect module may include a conductive element configured to connect to at least one of the emitter component or the detector component.

Abstract: A sensor device includes a sensor which is configured to detect a physical quantity generated by an impact event and to generate first measurement data based on the impact event. The sensor device also includes a MEMS microphone configured to detect sound waves generated by the impact event and to generate second measurement data based on the impact event. The sensor device is configured to provide the first measurement data and the second measurement data to a logic unit. The logic unit is configured to detect the impact event based on a combination of the first measurement data and the second measurement data.

Abstract: Embodiments relate to sensor and sensing devices, systems and methods. In an embodiment, a micro-electromechanical system (MEMS) device comprises at least one sensor element; a framing element disposed around the at least one sensor element; at least one port defined by the framing element, the at least one port configured to expose at least a portion of the at least one sensor element to an ambient environment; and a thin layer disposed in the at least one port.

Abstract: The present disclosure relates to a magnetic-sensor device comprising a circuit board made of an electrically insulating material and having conductor tracks, and comprising a permanent magnet surface-mounted on the circuit board, and a magnetic-field sensor connected to the conductor tracks of the circuit board. An SMD component for populating a circuit board is also proposed, which SMD component comprises a permanent magnet and a magnetic-field sensor.

Abstract: A sensor device includes a sensor chip with a micro-electromechanical systems (MEMS) structure, wherein the MEMS structure is arranged at a main surface of the sensor chip, and a gas-permeable cover arranged over the main surface of the sensor chip, which covers the MEMS structure and forms a cavity above the MEMS structure.

Abstract: A photo-acoustic gas sensor may include a detector component. The detector component includes a package that defines a reference volume. The reference volume houses a reference gas. The detector component includes a pressure sensing element to measure an amount of pressure in the reference volume. The amount of pressure in the reference volume depends on absorption of a wavelength of light by the reference gas in the reference volume. A sensitivity of the pressure sensing element when measuring the amount of pressure in the reference volume depends on a length of a reference path associated with the reference volume. The detector component includes a reference path structure that causes the length of the reference path to be less than or equal to 0.5 millimeters.

Abstract: A method for fabricating packaged semiconductor devices is disclosed. In one example the method comprises providing a plurality of semiconductor dies, the semiconductor dies being arranged in an array on a carrier such that a first side of the semiconductor dies faces the carrier and such that an empty space is arranged laterally besides each semiconductor die. A substrate comprising a plurality of conductive elements is arranged over the plurality of semiconductor dies such that a conductive element is arranged in the respective empty space besides each one of the semiconductor dies. The plurality of semiconductor dies are molded over to form a molded body, and singulating packaged semiconductor devices from the molded body by cutting through the molded body.

Abstract: A gas sensor includes a multi-wafer stack of a plurality of layers and a measurement chamber. The plurality of layers includes a first layer comprising a sensor element that has a microelectromechanical system (MEMS) membrane; and a second layer comprising an emitter element configured to emit electromagnetic radiation. The measurement chamber is interposed between the first layer and the second layer. The measurement chamber is configured to receive a measurement gas and further receive the electromagnetic radiation emitted by the emitter element as the electromagnetic radiation travels along a radiation path from a first end of the measurement chamber to a second end of the measurement chamber that is opposite to the first end.

Abstract: A detector module is disclosed. In one example, the detector module is for a photo-acoustic gas sensor and comprises a first substrate made of a semiconductor material and comprising a first surface and a second surface opposite to the first surface, a second substrate comprising a third surface, a fourth surface opposite to the third surface, and a first recess formed in the fourth surface. The second substrate is connected with its fourth surface to the first substrate so that the first recess forms an airtight-closed first cell which is filled with a reference gas and a pressure sensitive element comprising a membrane disposed in contact with the reference gas. The detector module is further configured such that a beam of light pulses passes through the first substrate and thereby enters the first cell.

Abstract: A gas sensor includes a multi-wafer stack of a plurality of layers and a measurement chamber. The plurality of layers includes a first layer comprising a sensor element that has a microelectromechanical system (MEMS) membrane; and a second layer comprising an emitter element configured to emit electromagnetic radiation. The measurement chamber is interposed between the first layer and the second layer. The measurement chamber is configured to receive a measurement gas and further receive the electromagnetic radiation emitted by the emitter element as the electromagnetic radiation travels along a radiation path from a first end of the measurement chamber to a second end of the measurement chamber that is opposite to the first end.

Abstract: Photoacoustic gas sensor having a light pulse emitter, a microphone in a reference gas housing having a reference gas, and a sample gas housing to be filled with a gas to be analyzed. A wall separates the sample gas housing from the reference gas housing, and has a transparent region that is transparent to light within a frequency range of emitted light pulses. Remaining inner walls of the sample gas housing have a reflecting surface that reflect light pulses emitted by the emitter so that a portion of the light pulses not absorbed by the gas to be analyzed pass through the transparent region into the reference gas volume. The microphone generates a sensor signal indicating information on an acoustic wave caused by the light pulses interacting with the reference gas after crossing the gas to be analyzed.

Abstract: The present disclosure relates to an inductive angle and/or position sensor comprising a first sensor component and a second sensor component, which is movable relative thereto, wherein the first sensor component comprises an excitation coil and a receiving coil arrangement having two or more individual receiving coils, and wherein the second sensor component comprises an inductive target. The first sensor component comprises a semiconductor chip having an integrated circuit. The sensor comprises a housing, in which the semiconductor chip is arranged. The individual receiving coils of the receiving coil arrangement are configured in at least two structured metallization layers spaced apart from one another, which are arranged within the housing and/or outside on an outer surface of the housing.

Abstract: A photoacoustic sensor includes a first MEMS device and a second MEMS device. The first MEMS device includes a first MEMS component including an optical emitter, and a first optically transparent cover wafer-bonded to the first MEMS component, wherein the first MEMS component and the first optically transparent cover form a first closed cavity. The second MEMS device includes a second MEMS component including a pressure detector, and a second optically transparent cover wafer-bonded to the second MEMS component, wherein the second MEMS component and the second optically transparent cover form a second closed cavity.

Abstract: A method for producing a semiconductor component is proposed. The method includes providing a housing. At least one semiconductor chip is arranged in a cavity of the housing. Furthermore, an electrical contact of the semiconductor chip is connected to an electrical contact of the housing via a bond wire. The method furthermore includes applying a protective material on the electrical contact of the housing and also on a region of the bond wire which is adjacent to the electrical contact of the housing. Moreover, the method also includes filling at least one partial region of the cavity with a gel.

Abstract: A method for producing a semiconductor component is proposed. The method includes providing a housing. At least one semiconductor chip is arranged in a cavity of the housing. Furthermore, an electrical contact of the semiconductor chip is connected to an electrical contact of the housing via a bond wire. The method furthermore includes applying a protective material on the electrical contact of the semiconductor chip and also on a region of the bond wire which is adjacent to the electrical contact of the semiconductor chip, and/or on the electrical contact of the housing and also on a region of the bond wire which is adjacent to the electrical contact of the housing. Moreover, the method also includes filling at least one partial region of the cavity with a gel.

Abstract: A method of forming a semiconductor package includes providing a panel, providing one or more metal layers on an upper surface of the panel, forming a die pad and bond pads from the one or more metal layers, the die pad being adjacent to and spaced apart from the bond pads, attaching a die to the die pad, forming electrical connections between the die and the bond pads, encapsulating the die and the electrical connections with an electrically insulating mold compound, removing portions of the panel, and exposing the die pad and the bond pads after encapsulating the die.

Abstract: A semiconductor device may include a stress decoupling structure to at least partially decouple a first region of the semiconductor device and a second region of the semiconductor device. The stress decoupling structure may include a set of trenches that are substantially perpendicular to a main surface of the semiconductor device. The first region may include a micro-electro-mechanical (MEMS) structure. The semiconductor device may include a sealing element to at least partially seal openings of the stress decoupling structure.

Abstract: A semiconductor device comprises a first semiconductor chip, a first planar waveguide transmission line arranged within a BEOL metal stack of the first semiconductor chip, wherein the first planar waveguide transmission line comprises line sections situated opposite one another, and a second planar waveguide transmission line arranged over the first semiconductor chip and electrically coupled to the first planar waveguide transmission line, wherein the second planar waveguide transmission line comprises line sections situated opposite one another.