Abstract: According to an exemplary embodiment, a semiconductor component includes a chip carrier, a semiconductor chip mounted on the chip carrier, and a chip package made of potting compound. The potting compound only partially surrounds the semiconductor chip, such that at least part of an upper side of the semiconductor chip is not covered by the potting compound. The semiconductor component further includes a clip that is mechanically connected to the upper side of the semiconductor chip.

Abstract: A method is disclosed. In one example, the method includes bonding a first panel of a first material to a base panel in a first gas atmosphere, wherein multiple hermetically sealed first cavities encapsulating gas of the first gas atmosphere are formed between the first panel and the base panel. The method further includes bonding a second panel of a second material to at least one of the base panel and the first panel, wherein multiple second cavities are formed between the second panel and the at least one of the base panel and the first panel.

Abstract: What is proposed is an ultrasonic touch sensor having a contact surface for attaching the ultrasonic touch sensor to a casing, having a first ultrasonic transducer element, having a first semiconductor chip, wherein the first semiconductor chip comprises the first ultrasonic transducer element, wherein the first semiconductor chip is potted into a potting compound in such a way that a first cutout is formed from the first ultrasonic transducer element to the contact surface of the ultrasonic touch sensor, and wherein the potting compound forms the housing of the ultrasonic touch sensor.

Abstract: In the following, a sensor assembly is described. According to an exemplary embodiment, the sensor assembly has a housing enclosing a pressure chamber filled with a medium, the housing having a first housing part and a second housing part, the first housing part being connected to the second housing part to seal the pressure chamber in a pressure-tight manner A sensor chip is arranged in the pressure chamber, substantially surrounded by the medium, and configured to measure a pressure of the medium. The sensor assembly also includes a plurality of connection pins which are fed through the first housing part (carrier) by pressure-tight bushings and which are electrically connected to the sensor chip. The sensor assembly also has stress relieving structures which are configured to mechanically decouple the first housing part and a pressure-sensitive element of the sensor chip.

Abstract: A photoacoustic sensor includes a first MEMS device and a second MEMS device. The first MEMS device includes a first MEMS component including an optical emitter, and a first optically transparent cover wafer-bonded to the first MEMS component, wherein the first MEMS component and the first optically transparent cover form a first closed cavity. The second MEMS device includes a second MEMS component including a pressure detector, and a second optically transparent cover wafer-bonded to the second MEMS component, wherein the second MEMS component and the second optically transparent cover form a second closed cavity.

Abstract: An ultrasonic touch sensor is proposed for attachment to a casing, having a semiconductor chip including a substrate side and a component side, the semiconductor chip including an ultrasonic transducer element and the ultrasonic transducer element being arranged on the component side, having an acoustic coupling medium covering the semiconductor chip at least in the region of the ultrasonic transducer element, having electrical contact elements for controlling the ultrasonic transducer element, and the electrical contact elements being arranged on the component side of the semiconductor chip.

Abstract: The present disclosure relates to a magnetic-sensor device comprising a circuit board made of an electrically insulating material and having conductor tracks, and comprising a permanent magnet surface-mounted on the circuit board, and a magnetic-field sensor connected to the conductor tracks of the circuit board. An SMD component for populating a circuit board is also proposed, which SMD component comprises a permanent magnet and a magnetic-field sensor.

Abstract: A gas sensor includes a multi-wafer stack of a plurality of layers and a measurement chamber. The plurality of layers includes a first layer comprising a sensor element that has a microelectromechanical system (MEMS) membrane; and a second layer comprising an emitter element configured to emit electromagnetic radiation. The measurement chamber is interposed between the first layer and the second layer. The measurement chamber is configured to receive a measurement gas and further receive the electromagnetic radiation emitted by the emitter element as the electromagnetic radiation travels along a radiation path from a first end of the measurement chamber to a second end of the measurement chamber that is opposite to the first end.

Abstract: A method is disclosed. In one example, the method includes bonding a first panel of a first material to a base panel in a first gas atmosphere, wherein multiple hermetically sealed first cavities encapsulating gas of the first gas atmosphere are formed between the first panel and the base panel. The method further includes bonding a second panel of a second material to at least one of the base panel and the first panel, wherein multiple second cavities are formed between the second panel and the at least one of the base panel and the first panel.

Abstract: One example implementation of a mirror system comprises a carrier, and a first chip package arranged on a surface of the carrier and comprising a first MEMS mirror. Furthermore, the mirror system comprises a second chip package arranged on the surface of the carrier and comprising a second MEMS mirror. The mirror system furthermore comprises a reflective element arranged over the surface of the carrier and above the first chip package and the second chip package in such a way that a radiation that is incident in the mirror system and is reflected by the first MEMS mirror in the direction of the reflective element is reflected by the reflective element in the direction of the second MEMS mirror.

Abstract: A magnetic field sensor package comprises a chip carrier, a magnetic field sensor which is arranged on the chip carrier and designed to detect a magnetic field, an integrated circuit which is arranged on the chip carrier and designed to logically process sensor signals provided by the magnetic field sensor, and at least one integrated passive component which is electrically coupled to at least one of the magnetic field sensor or the integrated circuit.

Abstract: A radio-frequency device comprises a printed circuit board and a radio-frequency package having a radio-frequency chip and a radio-frequency radiation element, the radio-frequency package being mounted on the printed circuit board. The radio-frequency device furthermore comprises a waveguide component having a waveguide, wherein the radio-frequency radiation element is configured to radiate transmission signals into the waveguide and/or to receive reception signals via the waveguide.

Abstract: A method is provided for producing a hermetically sealed housing having a semiconductor component. The method comprises introducing a housing having a housing body and a housing cover into a process chamber. The housing cover closes off a cavity of the housing body and is attached in a gas-tight manner to the housing body. At least one opening is formed in the housing. At least one semiconductor component is arranged in the cavity. The method furthermore comprises generating a vacuum in the cavity by evacuating the process chamber, and also generating a predetermined gas atmosphere in the cavity and the process chamber. The method moreover comprises applying sealing material to the at least one opening while the predetermined gas atmosphere prevails in the process chamber.

Abstract: An apparatus for in-situ calibration of a photoacoustic sensor includes a measurement device configured to measure an electric signal at an IR emitter of the photoacoustic sensor, wherein the IR emitter generates an electromagnetic spectrum based on the electric signal; and a calibration unit including processing circuitry, configured to compare the electric signal with a comparison value to generate a comparison result used as calibration information. When performing the in-situ calibration, the calibration unit is configured to adjust the electric signal based on the calibration information, or the calibration unit is configured to process an output signal of the photoacoustic sensor based on the calibration information to obtain an adjusted output signal of the photoacoustic sensor.

Abstract: A method of producing packaged semiconductor devices includes providing a first packaging substrate panel, providing a second packaging substrate panel, and moving the first and second packaging substrate panels through an assembly line that comprises a plurality of package assembly tools using a control mechanism. First type packaged semiconductor devices are formed on the first packaging substrate panel and second type packaged semiconductor devices are formed on the second packaging substrate panel. The control mechanism moves both of the first and packaging substrate panels through the assembly line in a non-linear manner. The first and second packaged semiconductor devices differ with respect to at least one of: lead configuration, and encapsulant configuration.

Abstract: A pressure sensor module including a housing, a pressure sensor chip, and one or more of an integrated passive device (IDP) chip and discrete passive devices are disclosed. The pressure sensor chip and one or more of the IPD chip and the discrete passive devices are arranged within the housing.

Abstract: A method is provided for producing a hermetically sealed housing having a semiconductor component. The method comprises introducing a housing having a housing body and a housing cover into a process chamber. The housing cover closes off a cavity of the housing body and is attached in a gas-tight manner to the housing body. At least one opening is formed in the housing. At least one semiconductor component is arranged in the cavity. The method furthermore comprises generating a vacuum in the cavity by evacuating the process chamber, and also generating a predetermined gas atmosphere in the cavity and the process chamber. The method moreover comprises applying sealing material to the at least one opening while the predetermined gas atmosphere prevails in the process chamber.

Abstract: An apparatus for in-situ calibration of a photoacoustic sensor is provided. The apparatus includes a calibration unit that includes at least one processor configured to calculate calibration information. A light emitter of the photoacoustic sensor is configured to emit an electromagnetic spectrum and the photoacoustic sensor is configured to provide at least two measurement signals based on at least two electromagnetic spectra. The calibration unit is configured to compare the at least two measurement signals to obtain the calibration information and apply the calibration information to the photoacoustic sensor to perform the in-situ calibration.

Abstract: A transducer structure is disclosed. The transducer structure may include a substrate with a MEMS structure located on a first side of the substrate and a lid coupled to the first side of the substrate and covering the MEMS structure. The substrate may include an electric contact which is laterally displaced from the lid on the first side of the substrate and electrically coupled to the MEMS structure.

Abstract: A photoacoustic sensor includes a first layer with an optical MEMS emitter; a second layer stacked over the first layer with a MEMS pressure pick-up and an optically transparent window, wherein the MEMS pressure pick-up and the optically transparent window are offset laterally with respect to one another; and a third layer stacked over the second layer with a cavity for a reference gas. The optical MEMS emitter transmits optical radiation along an optical path, wherein the optical path runs through the optically transparent window and the cavity for the reference gas, and wherein the MEMS pressure pick-up is outside the course of the optical path.