Patents by Inventor Howard E. Rhodes

Howard E. Rhodes has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Backside illuminated image sensor having deep light reflective trenches
    Patent number: 8187909
    Abstract: An array of pixels is formed using a semiconductor layer having a frontside and a backside through which incident light is received. Each pixel typically includes a photosensitive region formed in the semiconductor layer and a trench formed adjacent to the photosensitive region. The trench causes the incident light to be directed away from the trench and towards the photosensitive region.
    Type: Grant
    Filed: August 10, 2010
    Date of Patent: May 29, 2012
    Assignee: OmniVision Technologies, Inc.
    Inventors: Vincent Venezia, Hsin-Chih Tai, Duli Mao, Sohei Manabe, Howard E. Rhodes, Wei Dong Qian
  • Pumps for CMOS imagers
    Patent number: 8183515
    Abstract: A pixel for an imaging device is described. The pixel includes a photosensitive device provided within a substrate for providing photo-generated charges, a circuit associated with the photosensitive device for providing at least one pixel output signal representative of the photo-generated charges, the circuit includes at least one operative device that is responsive to a first control signal during operation of the associated circuit and a pump circuit. The pump circuit may include substrate pumps, charge pumps and/or voltage pumps. The pixel may also be embedded in an imaging system.
    Type: Grant
    Filed: March 18, 2010
    Date of Patent: May 22, 2012
    Assignee: Micron Technology, Inc.
    Inventor: Howard E. Rhodes
  • Image sensor with buried self aligned focusing element
    Patent number: 8183510
    Abstract: An image sensor includes an optical sensor region, a stack of dielectric and metal layers, and an embedded layer. The optical sensor is disposed within a semiconductor substrate. The stack of dielectric and metal layers are disposed on the front side of the semiconductor substrate above the optical sensor region. The embedded focusing layer is disposed on the backside of the semiconductor substrate in a Backside Illuminated (BSI) image sensor, supported by a support grid, or a support grid composed of the semiconductor substrate.
    Type: Grant
    Filed: September 14, 2009
    Date of Patent: May 22, 2012
    Assignee: OmniVision Technologies, Inc.
    Inventors: Vincent Venezia, Hsin-Chih Tai, Duli Mao, Ashish Shah, Howard E. Rhodes
  • System and method for improved image processing
    Patent number: 8179458
    Abstract: A system and method for improving image processing. In one aspect of the invention the method includes receiving data indicating an intensity of light incident on a first pixel of a pixel array and determining from the received data if the intensity of incident light on the first pixel satisfies a first condition. A processing operation is performed on data received from a second, third and fourth pixel of the pixel array but skipped on the data received from the first pixel if the first condition is satisfied. The first condition includes whether the first pixel is substantially saturated in response to an intensity of light incident on the first pixel.
    Type: Grant
    Filed: October 13, 2009
    Date of Patent: May 15, 2012
    Assignee: OmniVision Technologies, Inc.
    Inventor: Howard E. Rhodes
  • IMAGE SENSOR WITH COLOR PIXELS HAVING UNIFORM LIGHT ABSORPTION DEPTHS
    Publication number: 20120104525
    Abstract: An example image sensor includes first, second, and third micro-lenses. The first micro-lens is in a first color pixel and has a first curvature and a first height. The second micro-lens is in a second color pixel and has a second curvature and a second height. The third micro-lens is in a third color pixel and has a third curvature and a third height. The first curvature is the same as both the second curvature and the third curvature and the first height is greater than the second height and the second height is greater than the third height, such that light absorption depths for the first, second, and third color pixels are the same.
    Type: Application
    Filed: January 5, 2012
    Publication date: May 3, 2012
    Applicant: OMNIVISION TECHNOLOGIES, INC.
    Inventors: Fei Wu, Hongjun Li, Yin Qian, Hsin-Chih Tai, Howard E. Rhodes, Jizhang Shan
  • CIRCUIT AND PHOTO SENSOR OVERLAP FOR BACKSIDE ILLUMINATION IMAGE SENSOR
    Publication number: 20120086844
    Abstract: A method of operation of a backside illuminated (BSI) pixel array includes acquiring an image signal with a first photosensitive region of a first pixel within the BSI pixel array. The image signal is generated in response to light incident upon a backside of the first pixel. The image signal acquired by the first photosensitive region is transferred to pixel circuitry of the first pixel disposed on a frontside of the first pixel opposite the backside. The pixel circuitry at least partially overlaps the first photosensitive region of the first pixel and extends over die real estate above a second photosensitive region of a second pixel adjacent to the first pixel such that the second pixel donates die real estate unused by the second pixel to the first pixel to accommodate larger pixel circuitry than would fit within the first pixel.
    Type: Application
    Filed: December 15, 2011
    Publication date: April 12, 2012
    Applicant: OMNIVISION TECHNOLOGIES, INC.
    Inventors: Tiejun Dai, Hsin-Chih Tai, Sohei Manabe, Hidetoshi Nozaki, Howard E. Rhodes
  • METHOD OF MANUFACTURING AN INTEGRATED CIRCUIT AND PHOTOSENSOR CELL WITH SELECTIVELY SILICIDED GATES
    Publication number: 20120062762
    Abstract: The invention also relates to an apparatus and method for selectively providing a silicide coating over the transistor gates of a CMOS imager to improve the speed of the transistor gates. The method further includes an apparatus and method for forming a self aligned photo shield over the CMOS imager.
    Type: Application
    Filed: November 22, 2011
    Publication date: March 15, 2012
    Applicant: ROUND ROCK RESEARCH, LLC
    Inventor: Howard E. Rhodes
  • Contacts for CMOS imagers and method of formation
    Patent number: 8129761
    Abstract: Low leakage contacts on leakage sensitive areas of a CMOS imager, such as a floating diffusion region or a photodiode, are disclosed. At least one low leakage polysilicon contact is provided over a leakage sensitive area of a CMOS imager. The polysilicon contact comprises a polysilicon region in direct contact with the area of interest (the leakage sensitive area) and a metal region located over the polysilicon region. The polysilicon contact provides an improved ohmic contact with less leakage into the substrate. The polysilicon contact may be provided with other conventional metal contacts, which are employed in areas of the CMOS imager that do not require low leakage.
    Type: Grant
    Filed: February 2, 2009
    Date of Patent: March 6, 2012
    Assignee: Aptina Imaging Corporation
    Inventors: Xiaofeng Fan, Richard A. Mauritzson, Howard E. Rhodes
  • Polymer-based ferroelectric memory
    Patent number: 8120083
    Abstract: Apparatus and systems may comprise electrode structures that include two or more dissimilar and abutting metal layers on a surface, some of the electrode structures separated by a gap; and a polymer-based ferroelectric layer overlying and directly abutting some of the electrode structures. Methods may comprise actions to form and operate the apparatus and systems. Additional apparatus, systems, and methods are disclosed.
    Type: Grant
    Filed: July 30, 2010
    Date of Patent: February 21, 2012
    Assignee: Micron Technology, Inc.
    Inventors: Vishnu K. Agarwal, Howard E. Rhodes
  • BACKSIDE ILLUMINATED IMAGE SENSOR WITH STRESSED FILM
    Publication number: 20120038014
    Abstract: A backside illuminated (“BSI”) complementary metal-oxide semiconductor (“CMOS”) image sensor includes a photosensitive region disposed within a semiconductor layer and a stress adjusting layer. The photosensitive region is sensitive to light incident on a backside of the BSI CMOS image sensor to collect an image charge. The stress adjusting layer is disposed on a backside of the semiconductor layer to establish a stress characteristic that encourages photo-generated charge carriers to migrate towards the photosensitive region.
    Type: Application
    Filed: August 10, 2010
    Publication date: February 16, 2012
    Applicant: OMNIVISION TECHNOLOGIES, INC.
    Inventors: Hsin-Chih Tai, Howard E. Rhodes, Wei Zheng, Vincent Venezia, Yin Qian, Duli Mao
  • Waveguide for thermo optic device
    Patent number: 8111965
    Abstract: A waveguide and resonator are formed on a lower cladding of a thermo optic device, each having a formation height that is substantially equal. Thereafter, the formation height of the waveguide is attenuated. In this manner, the aspect ratio as between the waveguide and resonator in an area where the waveguide and resonator front or face one another decreases (in comparison to the prior art) thereby restoring the synchronicity between the waveguide and the grating and allowing higher bandwidth configurations to be used. The waveguide attenuation is achieved by photomasking and etching the waveguide after the resonator and waveguide are formed. In one embodiment the photomasking and etching is performed after deposition of the upper cladding. In another, it is performed before the deposition. Thermo optic devices, thermo optic packages and fiber optic systems having these waveguides are also taught.
    Type: Grant
    Filed: May 2, 2011
    Date of Patent: February 7, 2012
    Assignee: Micron Technology, Inc.
    Inventors: Guy T. Blalock, Howard E. Rhodes, Vishnu K. Agarwal, Gurtej Singh Sandhu, James S. Foresi, Jean-Francois Viens, Dale G. Fried
  • CMOS imager having a nitride dielectric
    Patent number: 8105858
    Abstract: An imaging device formed as a CMOS semiconductor integrated circuit includes a nitrogen containing insulating material beneath a photogate. The nitrogen containing insulating material, preferably be one of a silicon nitride layer, an ONO layer, a nitrode/oxide layer and an oxide/nitrode layer. The nitrogen containing insulating layer provides an increased capacitance in the photogate region, higher breakdown voltage, a wider dynamic range and an improved signal to noise ratio. The invention also provides a method for fabricating a CMOS imager containing the nitrogen containing insulating layer.
    Type: Grant
    Filed: August 4, 2010
    Date of Patent: January 31, 2012
    Assignee: Micron Technology, Inc.
    Inventor: Howard E. Rhodes
  • Method of forming barrier regions for image sensors
    Patent number: 8105864
    Abstract: Embodiments of the invention provide an image sensor that includes a barrier region for isolating devices. The image sensor comprises a substrate and an array of pixel cells formed on the substrate. Each pixel cell comprises a photo-conversion device. The array comprises a first pixel cell having a first configuration, a second pixel cell having a second configuration, and at least one barrier region formed between the first and second pixel cells for capturing and removing charge. The barrier region comprises a charge accumulation region of a particular conductivity type in a substrate electrically connected to a voltage source terminal. The charge accumulation region accumulates charge and prevents charge transference from a pixel cell or peripheral circuitry on one side of the barrier region to a pixel cell on another side of the barrier region.
    Type: Grant
    Filed: November 17, 2006
    Date of Patent: January 31, 2012
    Assignee: Aptina Imaging Corporation
    Inventors: Howard E. Rhodes, Richard A. Mauritzson, William T. Quinlin
  • BACKSIDE ILLUMINATED IMAGING SENSOR WITH VERTICAL PIXEL SENSOR
    Publication number: 20120018620
    Abstract: A backside illuminated imaging sensor includes a vertical stacked sensor that reduces cross talk by using different silicon layers to form photodiodes at separate levels within a stack (or separate stacks) to detect different colors. Blue light-, green light-, and red light-detection silicon layers are formed, with the blue light detection layer positioned closest to the backside of the sensor and the red light detection layer positioned farthest from the backside of the sensor. An anti-reflective coating (ARC) layer can be inserted in between the red and green light detection layers to reduce the optical cross talk captured by the red light detection layer. Amorphous polysilicon can be used to form the red light detection layer to boost the efficiency of detecting red light.
    Type: Application
    Filed: September 30, 2011
    Publication date: January 26, 2012
    Applicant: OMNIVISION TECHNOLOGIES, INC.
    Inventors: Yin Qian, Hsin-Chih Tai, Duli Mao, Vincent Venezia, Howard E. Rhodes
  • IMAGE SENSOR HAVING DARK SIDEWALLS BETWEEN COLOR FILTERS TO REDUCE OPTICAL CROSSTALK
    Publication number: 20120019695
    Abstract: An apparatus and technique for fabricating an image sensor including the dark sidewall films disposed between adjacent color filters. The image sensor further includes an array of photosensitive elements disposed in a substrate layer, a color filter array (“CFA”) including CFA elements having at least two different colors disposed on a light incident side of the substrate layer, and an array of microlenses disposed over the CFA. Each microlens is aligned to direct light incident on the light incident side of the image sensor through a corresponding CFA element to a corresponding photosensitive element. The dark sidewall films are disposed on sides of the CFA elements and separate adjacent ones of the CFA elements having different colors.
    Type: Application
    Filed: July 26, 2010
    Publication date: January 26, 2012
    Applicant: OMNIVISION TECHNOLOGIES, INC.
    Inventors: Yin Qian, Hsin-Chih Tai, Duli Mao, Vincent Venezia, Howard E. Rhodes
  • Circuit and photo sensor overlap for backside illumination image sensor
    Patent number: 8101978
    Abstract: A backside illuminated (“BSI”) imaging sensor pixel includes a photodiode region and pixel circuitry. The photodiode region is disposed within a semiconductor die for accumulating an image charge in response to light incident upon a backside of the BSI imaging sensor pixel. The pixel circuitry includes transistor pixel circuitry disposed within the semiconductor die between a frontside of the semiconductor die and the photodiode region. At least a portion of the pixel circuitry overlaps the photodiode region.
    Type: Grant
    Filed: March 21, 2008
    Date of Patent: January 24, 2012
    Assignee: OmniVision Technologies, Inc.
    Inventors: Tiejun Dai, Hsin-Chih Tai, Sohei Manabe, Hidetoshi Nozaki, Howard E. Rhodes
  • CMOS IMAGE SENSOR WITH IMPROVED PHOTODIODE AREA ALLOCATION
    Publication number: 20120013777
    Abstract: Embodiments of an apparatus comprising a pixel array comprising a plurality of macropixels. Each macropixel includes a pair of first pixels each including a color filter for a first color, the first color being one to which pixels are most sensitive, a second pixel including a color filter for a second color, the second color being one to which the pixels are least sensitive and a third pixel including a color filter for a third color, the third color being one to which pixels have a sensitivity between the least sensitive and the most sensitive, wherein the first pixels each occupy a greater proportion of the light-collection area of the macropixel than either the second pixel or the third pixel. Corresponding process and system embodiments are disclosed and claimed.
    Type: Application
    Filed: July 16, 2010
    Publication date: January 19, 2012
    Applicant: OMNIVISION TECHNOLOGIES, INC.
    Inventors: Duli Mao, Hsin-Chih Tai, Vincent Venezia, Yin Qian, Howard E. Rhodes
  • Image sensor with micro-lenses of varying focal lengths
    Patent number: 8097890
    Abstract: An image sensor having a plurality of micro-lenses disposed on a semiconductor substrate. A first micro-lens has a different focal length, height, shape, curvature, thickness, etc., than a second micro-lens. The image sensor may be back side illuminated or front side illuminated.
    Type: Grant
    Filed: February 11, 2008
    Date of Patent: January 17, 2012
    Assignee: OmniVision Technologies, Inc.
    Inventors: WeiDong Qian, Hsin-Chih Tai, Vincent Venezia, Howard E. Rhodes
  • SEMICONDUCTOR DEVICE STRUCTURES INCLUDING DAMASCENE TRENCHES WITH CONDUCTIVE STRUCTURES AND RELATED METHOD
    Publication number: 20120007209
    Abstract: A method and apparatus for providing a conductive structure adjacent to a damascene conductive structure in a semiconductor device structure. The semiconductor device structure includes an insulation layer with at least one damascene conductive structure formed therein, wherein the at least one damascene conductive structure includes an insulative, protective layer disposed thereon. The insulative material of the protective layer is able to resist removal by at least some suitable etchants for the insulative material of the insulation layer adjacent to the at least one damascene conductive structure. A self-aligned opening is formed by removing a portion of an insulation layer adjacent the at least one damascene conductive structure. The self-aligned opening is then filled with a conductive material to thereby provide another conductive structure adjacent to the at least one damascene conductive structure.
    Type: Application
    Filed: September 20, 2011
    Publication date: January 12, 2012
    Applicant: MICRON TECHNOLOGY, INC.
    Inventor: Howard E. Rhodes
  • SINGLE POLY CMOS IMAGER
    Publication number: 20120001242
    Abstract: More complete charge transfer is achieved in a CMOS or CCD imager by reducing the spacing in the gaps between gates in each pixel cell, and/or by providing a lightly doped region between adjacent gates in each pixel cell, and particularly at least between the charge collecting gate and the gate downstream to the charge collecting gate. To reduce the gaps between gates, an insulator cap with spacers on its sidewalls is formed for each gate over a conductive layer. The gates are then etched from the conductive layer using the insulator caps and spacers as hard masks, enabling the gates to be formed significantly closer together than previously possible, which, in turn increases charge transfer efficiency. By providing a lightly doped region on between adjacent gates, a more complete charge transfer is effected from the charge collecting gate.
    Type: Application
    Filed: August 18, 2011
    Publication date: January 5, 2012
    Applicant: ROUND ROCK RESEARCH, LLC
    Inventor: Howard E. Rhodes