Abstract: A magnetic memory device includes a bottom electrode, a magnetic tunneling junction disposed over the bottom electrode, and a top electrode disposed over the magnetic tunneling junction, wherein the top electrode includes a first top electrode layer and a second top electrode layer above the first top electrode layer, and wherein the second top electrode layer is thicker than the first top electrode layer.

Abstract: In some embodiments, the present disclosure relates to an integrated chip that includes a first interconnect dielectric layer arranged over a substrate. An interconnect wire extends through the first interconnect dielectric layer, and a barrier structure is arranged directly over the interconnect wire. The integrated chip further includes an etch stop layer arranged over the barrier structure and surrounds outer sidewalls of the barrier structure. A second interconnect dielectric layer is arranged over the etch stop layer, and an interconnect via extends through the second interconnect dielectric layer, the etch stop layer, and the barrier structure to contact the interconnect wire.

Abstract: In some embodiments, the present disclosure relates to an integrated chip that includes a first interconnect dielectric layer arranged over a substrate, a second interconnect dielectric layer arranged over the first interconnect dielectric layer, and an interconnect conductive structure arranged within the second interconnect dielectric layer. The interconnect conductive structure includes an outer portion that includes a first conductive material. Further, the interconnect conductive structure includes a central portion having outermost sidewalls surrounding by the outer portion of the interconnect conductive structure. The central portion includes a second conductive material different than the first conductive material.

Abstract: The present disclosure relates to an integrated chip comprising a substrate. A first conductive wire is over the substrate. A second conductive wire is over the substrate and is adjacent to the first conductive wire. A first dielectric cap is laterally between the first conductive wire and the second conductive wire. The first dielectric cap laterally separates the first conductive wire from the second conductive wire. The first dielectric cap includes a first dielectric material. A first cavity is directly below the first dielectric cap and is laterally between the first conductive wire and the second conductive wire. The first cavity is defined by one or more surfaces of the first dielectric cap.

Abstract: A method of forming a semiconductor device structure is provided. The method includes forming a masking structure with first openings over a semiconductor substrate and correspondingly forming metal layers in the first openings. The method also includes recessing the masking structure to form second openings between the metal layers and forming a sacrificial layer surrounded by a first liner in each of the second openings. In addition, after forming a second liner over the sacrificial layer in each of the second openings, the method includes removing the sacrificial layer in each of the second openings to form a plurality of air gaps therefrom.

Abstract: Some embodiments of the present disclosure relate to a semiconductor structure including a first conductive wire disposed over a substrate. A dielectric liner is arranged along sidewalls and an upper surface of the first conductive wire and is laterally surrounded by a first dielectric layer. The dielectric liner and the first dielectric layer are different materials. A conductive via is disposed within a second dielectric layer over the first conductive wire. The conductive via has a first lower surface disposed over the first dielectric layer and a second lower surface below the first lower surface and over the first conductive wire.

Abstract: The present disclosure relates to an integrated chip including a substrate. A first conductive wire is within a first dielectric layer that is over the substrate. A first etch-stop layer is over the first dielectric layer. A second etch-stop layer is over the first etch-stop layer. A conductive via is within a second dielectric layer that is over the second etch-stop layer. The conductive via extends through the second etch-stop layer and along the first etch-stop layer to the first conductive wire. A first lower surface of the second etch-stop layer is on a top surface of the first etch-stop layer. A second lower surface of the second etch-stop layer is on a top surface of the first conductive wire.

Abstract: In some embodiments, the present disclosure relates to an integrated chip that includes a lower conductive structure arranged over a substrate. An etch stop layer is arranged over the lower conductive structure, and a first interconnect dielectric layer is arranged over the etch stop layer. The integrated chip further includes an interconnect via that extends through the first interconnect dielectric layer and the etch stop layer to directly contact the lower conductive structure. A protective layer surrounds outermost sidewalls of the interconnect via.

Abstract: A memory device includes a bottom electrode, a tunneling junction disposed over the bottom electrode, and a top electrode disposed over the tunneling junction. The top electrode includes a first top electrode layer and a second top electrode layer above the first top electrode layer. The first and second top electrode layers include different material compositions. The first top electrode layer is thinner than the tunneling junction, and the second top electrode layer is thicker than the tunneling junction.

Abstract: An interconnection structure, along with methods of forming such, are described. The interconnection structure includes a first portion of a conductive layer, a second portion of the conductive layer disposed adjacent the first portion of the conductive layer, and a dielectric foam disposed between the first and second portions of the conductive layer. The dielectric foam includes fluid gaps filled with carbon dioxide gas.

Abstract: An interconnect structure includes dielectric layer, a first conductive feature, a second conductive feature, a third conductive feature, and a dielectric fill. The first conductive feature is disposed in the dielectric layer. The second conductive feature is disposed over the first conductive feature. The second conductive feature includes a first conductive layer disposed over the first conductive feature, a second conductive layer disposed on the first conductive layer, and a third conductive layer disposed on the second conductive layer. The first conductive layer, the second conductive layer and the third conductive layer have substantially the same width. The third conductive feature is disposed over the dielectric layer. The dielectric fill is disposed over the dielectric layer between the second conductive feature and the third conductive feature.

Abstract: The present disclosure relates to a semiconductor structure including an interconnect structure disposed over a semiconductor substrate. A lower metal line is disposed at a first height over the semiconductor substrate and extends through a first interlayer dielectric layer. A second interlayer dielectric layer is disposed at a second height over the semiconductor substrate and comprises a first dielectric material. An upper metal line is disposed at a third height over the semiconductor substrate. A via is disposed at the second height. The via extends between the lower metal line and the upper metal line. A protective dielectric structure is disposed at the second height. The protective dielectric structure comprises a protective dielectric material and is disposed along a first set of opposing sidewalls of the via, the protective dielectric material differing from the first dielectric material.

Abstract: In some embodiments, the present disclosure relates to a method of forming an interconnect. The method includes forming an etch stop layer (ESL) over a lower conductive structure and forming one or more dielectric layers over the ESL. A first patterning process is performed on the one or more dielectric layers to form interconnect opening and a second patterning process is performed on the one or more dielectric layers to increase a depth of the interconnect opening and expose an upper surface of the ESL. A protective layer is selectively formed on sidewalls of the one or more dielectric layers forming the interconnect opening. A third patterning process is performed to remove portions of the ESL that are uncovered by the one or more dielectric layers and the protective layer and to expose the lower conductive structure. A conductive material is formed within the interconnect opening.

Abstract: The present disclosure relates to a semiconductor structure including an interconnect structure disposed over a semiconductor substrate. A lower metal line is disposed at a first height over the semiconductor substrate and extends through a first interlayer dielectric layer. A second interlayer dielectric layer is disposed at a second height over the semiconductor substrate and comprises a first dielectric material. An upper metal line is disposed at a third height over the semiconductor substrate. A via is disposed at the second height. The via extends between the lower metal line and the upper metal line. A protective dielectric structure is disposed at the second height. The protective dielectric structure comprises a protective dielectric material and is disposed along a first set of opposing sidewalls of the via, the protective dielectric material differing from the first dielectric material.

Abstract: In some embodiments, the present disclosure relates to an integrated chip that includes a first interconnect dielectric layer over a substrate. An interconnect wire extends through the first interconnect dielectric layer, and a dielectric on wire structure is arranged directly over the interconnect wire. Outer sidewalls of the dielectric on wire structure are surrounded by the first interconnect dielectric layer. The integrated chip further includes a second interconnect dielectric layer arranged over the first interconnect dielectric layer, and an interconnect via that extends through the second interconnect dielectric layer and the dielectric on wire structure to contact the interconnect wire.

Abstract: The present disclosure relates to an integrated chip. The integrated chip comprises a dielectric layer over a substrate. A first metal feature is over the dielectric layer. A second metal feature is over the dielectric layer and is laterally adjacent to the first metal feature. A first dielectric liner segment extends laterally between the first metal feature and the second metal feature along an upper surface of the dielectric layer. The first dielectric liner segment extends continuously from along the upper surface of the dielectric layer, to along a sidewall of the first metal feature that faces the second metal feature, and to along a sidewall of the second metal feature that faces the first metal feature. A first cavity is laterally between sidewalls of the first dielectric liner segment and is above an upper surface of the first dielectric liner segment.

Abstract: The present disclosure relates to an integrated chip. The integrated chip comprises a dielectric layer over a substrate. A first metal feature is over the dielectric layer. A second metal feature is over the dielectric layer and is laterally adjacent to the first metal feature. A first dielectric liner segment extends laterally between the first metal feature and the second metal feature along an upper surface of the dielectric layer. The first dielectric liner segment extends continuously from along the upper surface of the dielectric layer, to along a sidewall of the first metal feature that faces the second metal feature, and to along a sidewall of the second metal feature that faces the first metal feature. A first cavity is laterally between sidewalls of the first dielectric liner segment and is above an upper surface of the first dielectric liner segment.

Abstract: A semiconductor structure includes a gate structure over a substrate. The structure also includes source/drain epitaxial structures formed on opposite sides of the gate structure. The structure also includes a contact structure formed over the source/drain epitaxial structure. The structure also includes a first via structure formed over the contact structure. The structure also includes a metal line electrically connected to the first via structure. The structure also includes a spacer layer formed over the sidewall and over a portion of a top surface of the metal line. The structure also includes a second via structure formed over the metal line through the spacer layer.

Abstract: Some embodiments relate to a method for forming a semiconductor structure, the method includes forming a first dielectric layer over a substrate. A first conductive wire is formed over the first dielectric layer. A spacer structure is formed over the first conductive wire. The spacer structure is disposed along sidewalls of the first conductive wire. A second dielectric layer is deposited over and around the first conductive wire. The spacer structure is spaced between the first conductive wire and the second dielectric layer. A removal process is performed on the spacer structure and the second dielectric layer. An upper surface of the spacer structure is disposed above an upper surface of the first conductive wire.

Abstract: An integrated circuit includes a substrate, a bottom electrode, a dielectric layer, a metal-containing compound layer, a resistance switching element, and a top electrode. The bottom electrode is over the substrate, the bottom electrode having a bottom portion and a top portion over the bottom portion. The bottom portion of the bottom electrode has a sidewall slanted with respect to a sidewall of the top portion of the bottom electrode. The dielectric layer surrounds the bottom portion of the bottom electrode. The metal-containing compound layer surrounds the top portion of the bottom electrode. A top end of the sidewall of the bottom portion of the bottom electrode is higher than a bottom surface of the metal-containing compound layer. The resistance switching element is over the bottom electrode. The top electrode is over the resistance switching element.