Abstract: In one embodiment, a method of forming metal interconnects uses a direct metal etch approach to form and fill the metal gap. The method may include directly etching a metal layer to form metal patterns. The metal patterns may be spaced apart from one another by recesses. A dielectric spacer may be formed extending along the sidewalls of each of the recesses. The recesses may be filled with a conductive material to form a second set of metal patterns. By directly etching the metal film, the technique allows for reduced line width roughness. The disclosed structure may have the advantages of increased reliability, better RC performance and reduced parasitic capacitance.

Abstract: A device includes a semiconductor substrate, a bottom conductive line, a bottom electrode, a magnetic tunneling junction (MTJ), and a residue. The bottom conductive line is over the semiconductor substrate. The bottom electrode is over the bottom conductive line. The MTJ is over the bottom electrode. The residue of the MTJ is on the sidewall of the bottom electrode and is spaced apart from the bottom conductive line.

Abstract: The present disclosure relates to an integrated chip comprising a pair of first metal lines over a substrate. A first interlayer dielectric (ILD) layer is laterally between the pair of first metal lines. The first ILD layer comprises a first dielectric material. A pair of spacers are on opposite sides of the first ILD layer and are laterally separated from the first ILD layer by a pair of cavities. The pair of spacers comprise a second dielectric material. Further, the pair of cavities are defined by opposing sidewalls of the first ILD layer and sidewalls of the pair of spacers that face the first ILD layer.

Abstract: Some embodiments relate to a semiconductor structure including a first inter-level dielectric (ILD) layer overlying a substrate. A lower conductive via is disposed within the first ILD layer. A plurality of conductive wires overlie the first ILD layer. A second ILD layer is disposed laterally between the conductive wires, where the second ILD layer comprises a first material. A sidewall spacer structure is disposed between the second ILD layer and the plurality of conductive wires. The sidewall spacer structure continuously extends along opposing sidewalls of each conductive wire. A top surface of the sidewall spacer structure is vertically above a top surface of the plurality of conductive wires, and the sidewall spacer structure comprises a second material different from the first material.

Abstract: An integrated circuit includes a substrate, a dielectric layer, an etch stop layer, a bottom electrode, a resistance switching element, and a top electrode. The dielectric layer is over the substrate. The etch stop layer is over the dielectric layer, in which the dielectric layer has a first portion directly under the etch stop layer. The bottom electrode penetrates through the etch stop layer and the dielectric layer, in which the dielectric layer has a second portion directly under the bottom electrode, and a top of the first portion of the dielectric layer is lower than a top of the second portion of the dielectric layer. The resistance switching element is over the bottom electrode. The top electrode is over the resistance switching element.

Abstract: A semiconductor device includes a semiconductor substrate, a bottom electrode, a magnetic tunneling junction (MTJ), a top electrode, and a residue. The bottom electrode is disposed over the semiconductor substrate. The MTJ is disposed over the bottom electrode. The top electrode is disposed over the MTJ layer. Sidewalls of the bottom electrode, the MTJ, and the top electrode are vertically aligned with each other. The residue of the MTJ is located on the sidewall of the bottom electrode.

Abstract: The present disclosure relates to an integrated chip comprising a pair of first metal lines over a substrate. A first interlayer dielectric (ILD) layer is laterally between the pair of first metal lines. The first ILD layer comprises a first dielectric material. A pair of spacers are on opposite sides of the first ILD layer and are laterally separated from the first ILD layer by a pair of cavities. The pair of spacers comprise a second dielectric material. Further, the pair of cavities are defined by opposing sidewalls of the first ILD layer and sidewalls of the pair of spacers that face the first ILD layer.

Abstract: A semiconductor arrangement is provided. The semiconductor arrangement includes a first dielectric layer over a substrate, a metal layer over the first dielectric layer, a first conductive structure passing through the metal layer and the first dielectric layer, a second conductive structure passing through the metal layer and the first dielectric layer, and a third conductive structure coupling the first conductive structure to the second conductive structure, and overlying a first portion of the metal layer between the first conductive structure and the second conductive structure, wherein an interface exists between the metal layer and at least one of the first conductive structure or the second conductive structure.

Abstract: A semiconductor structure includes a conductive feature disposed over a semiconductor substrate, a via disposed in a first interlayer dielectric (ILD) layer over the conductive feature, and a metal-containing etch-stop layer (ESL) disposed on the via, where the metal-containing ESL includes a first metal and is resistant to etching by a fluorine-containing etchant. The semiconductor structure further includes a conductive line disposed over the metal-containing ESL, where the conductive line includes a second metal different from the first metal and is etchable by the fluorine-containing etchant, and where the via is configured to interconnect the conductive line to the conductive feature. Furthermore, the semiconductor structure includes a second ILD layer disposed over the first ILD layer.

Abstract: The present disclosure relates to an integrated chip. The integrated chip comprises a dielectric layer over a substrate. A first metal feature is over the dielectric layer. A second metal feature is over the dielectric layer and is laterally adjacent to the first metal feature. A first dielectric liner segment extends laterally between the first metal feature and the second metal feature along an upper surface of the dielectric layer. The first dielectric liner segment extends continuously from along the upper surface of the dielectric layer, to along a sidewall of the first metal feature that faces the second metal feature, and to along a sidewall of the second metal feature that faces the first metal feature. A first cavity is laterally between sidewalls of the first dielectric liner segment and is above an upper surface of the first dielectric liner segment.

Abstract: The present disclosure relates to a semiconductor structure including an interconnect structure disposed over a semiconductor substrate. A lower metal line is disposed at a first height over the semiconductor substrate and extends through a first interlayer dielectric layer. A second interlayer dielectric layer is disposed at a second height over the semiconductor substrate and comprises a first dielectric material. An upper metal line is disposed at a third height over the semiconductor substrate. A via is disposed at the second height. The via extends between the lower metal line and the upper metal line. A protective dielectric structure is disposed at the second height. The protective dielectric structure comprises a protective dielectric material and is disposed along a first set of opposing sidewalls of the via, the protective dielectric material differing from the first dielectric material.

Abstract: The present disclosure relates to an integrated chip comprising a pair of first metal lines over a substrate. A first interlayer dielectric (ILD) layer is laterally between the pair of first metal lines. The first ILD layer comprises a first dielectric material. A pair of spacers are on opposite sides of the first ILD layer and are laterally separated from the first ILD layer by a pair of cavities. The pair of spacers comprise a second dielectric material. Further, the pair of cavities are defined by opposing sidewalls of the first ILD layer and sidewalls of the pair of spacers that face the first ILD layer.

Abstract: Some embodiments relate to a semiconductor structure including a first inter-level dielectric (ILD) layer overlying a substrate. A lower conductive via is disposed within the first ILD layer. A plurality of conductive wires overlie the first ILD layer. A second ILD layer is disposed laterally between the conductive wires, where the second ILD layer comprises a first material. A sidewall spacer structure is disposed between the second ILD layer and the plurality of conductive wires. The sidewall spacer structure continuously extends along opposing sidewalls of each conductive wire. A top surface of the sidewall spacer structure is vertically above a top surface of the plurality of conductive wires, and the sidewall spacer structure comprises a second material different from the first material.

Abstract: A semiconductor arrangement is provided. The semiconductor arrangement includes a first dielectric layer over a substrate, a metal layer over the first dielectric layer, a first conductive structure passing through the metal layer and the first dielectric layer, a second conductive structure passing through the metal layer and the first dielectric layer, and a third conductive structure coupling the first conductive structure to the second conductive structure, and overlying a first portion of the metal layer between the first conductive structure and the second conductive structure, wherein an interface exists between the metal layer and at least one of the first conductive structure or the second conductive structure.

Abstract: A memory device includes a bottom electrode, an MTJ stack, and a top electrode. The bottom electrode has a lower sidewall and an upper sidewall above the lower sidewall and laterally set back from the lower sidewall. The MTJ stack is over the bottom electrode. The MTJ stack includes a bottom magnetic layer, a tunnel barrier layer over the bottom magnetic layer and a top magnetic layer over the tunnel barrier layer. The bottom magnetic layer has a sidewall coterminous with the upper sidewall of the bottom electrode. The top magnetic layer has a sidewall laterally set back from the upper sidewall of the bottom electrode. The top electrode is over the MTJ stack.

Abstract: A method of forming an interconnect structure for an integrated circuit device is provided. The method includes forming a conductive line layer over a semiconductor substrate. The conductive line layer includes a metal line. The method also includes forming a conductive pillar on and in contact with the metal line. The method further includes depositing a dielectric layer over the conductive line layer to cover the conductive pillar, and etching the dielectric layer to form a trench. The conductive pillar is exposed through the trench. In addition, the method includes filling the trench with a conductive material to form a conductive line.

Abstract: A semiconductor structure includes a conductive feature disposed over a semiconductor substrate, a via disposed in a first interlayer dielectric (ILD) layer over the conductive feature, and a metal-containing etch-stop layer (ESL) disposed on the via, where the metal-containing ESL includes a first metal and is resistant to etching by a fluorine-containing etchant. The semiconductor structure further includes a conductive line disposed over the metal-containing ESL, where the conductive line includes a second metal different from the first metal and is etchable by the fluorine-containing etchant, and where the via is configured to interconnect the conductive line to the conductive feature. Furthermore, the semiconductor structure includes a second ILD layer disposed over the first ILD layer.

Abstract: A semiconductor arrangement is provided. The semiconductor arrangement includes a first dielectric layer over a substrate, a metal layer over the first dielectric layer, a first conductive structure passing through the metal layer and the first dielectric layer, a second conductive structure passing through the metal layer and the first dielectric layer, and a third conductive structure coupling the first conductive structure to the second conductive structure, and overlying a first portion of the metal layer between the first conductive structure and the second conductive structure, wherein an interface exists between the metal layer and at least one of the first conductive structure or the second conductive structure.

Abstract: Semiconductor devices and methods of forming the same are provided. A method according to the present disclosure includes providing a workpiece including a metal feature in a first dielectric layer, an etch stop layer (ESL) over the metal feature, a second dielectric layer over the ESL, a third dielectric layer over the second dielectric layer, a patterned hard mask having a trench. The method further includes forming a via opening through the trench in the patterned hard mask, the second dielectric layer, the third dielectric layer, and the ESL to expose the metal feature, depositing a metal layer in the trench and the via opening to form a metal line and a metal contact via, respectively, and over the workpiece, removing the patterned hard mask between the metal line and the metal contact via, and depositing a fourth dielectric layer between the metal line and the metal contact via.

Abstract: An semiconductor device includes a first dielectric layer, an etch stop layer, an interconnect structure, and a second dielectric layer. The etch stop layer is over the first dielectric layer. The interconnect structure includes a conductive via in the first dielectric layer and the etch stop layer, a conductive line over the conductive via, an intermediate conductive layer over the conductive line, and a conductive pillar over the intermediate conductive layer. The interconnect structure is electrically conductive at least from a top of the conductive pillar to a bottom of the conductive via. The second dielectric layer surrounds the conductive line, the intermediate conductive layer, and the conductive pillar, wherein a bottom of the second dielectric layer is lower than a top of the conductive line, and a top of the second dielectric layer is higher than the top of the conductive line.