Abstract: A bracket includes a fixing seat, an adapter seat, a first clamping block, a second clamping block, a first clamping piece, a second clamping piece, a main screw and a position-limiting element. The fixing seat includes a first protrusion post. The adapter seat includes a second protrusion post. The first clamping block includes a first through-hole and a first pivot hole. The second clamping block including a first tapped hole and a second pivot hole. The first clamping piece includes a first clamping part and a first pivotal shaft. The first pivotal shaft is inserted into the first pivot hole. The second clamping piece includes a second clamping part and a second pivotal shaft. The second pivotal shaft is inserted into the second pivot hole. The main screw is penetrated through the first through-hole and then tightened into the second tapped hole.

Abstract: A deposition apparatus and a method are provided. A method includes placing a substrate over a platform in a chamber of a deposition system. A precursor material is introduced into the chamber. A first gas curtain is generated in front of a first electromagnetic (EM) radiation source coupled to the chamber. A plasma is generated from the precursor material in the chamber, wherein the plasma comprises dissociated components of the precursor material. The plasma is subjected to a first EM radiation from the first EM radiation source. The first EM radiation further dissociates the precursor material. A layer is deposited over the substrate. The layer includes a reaction product of the dissociated components of the precursor material.

Abstract: A structure includes a gate stack over a semiconductor region, a source/drain region on a side of the gate stack, a contact etch stop layer over a part of the source/drain region, an inter-layer dielectric over the contact etch stop layer, a silicide region over the source/drain region, a source/drain contact plug over and contacting the silicide region, and an isolation layer encircling the source/drain contact plug. In a top view of the source/drain contact plug, the source/drain contact plug is elongated, and the isolation layer includes an end portion at an end of the source/drain contact plug, and a middle portion between opposing ends of the source/drain contact plug. An end-portion thickness of the end portion is greater than a middle-portion thickness of the middle portion.

Abstract: The present disclosure relates in part to compounds capable of emitting delayed fluorescence and uses of these compounds in organic light-emitting diodes.

Abstract: A microwave coupling moisture content sensor and a method for deriving a linear regression correlation between signal data generated by a microwave moisture content sensor and moisture contents of objects are disclosed. The microwave coupling moisture content sensor includes a microwave resonator and a signal feeding member or a microwave emitting member. An object is placed outside the microwave resonator, and the signal feeding member or the microwave emitting member emits microwaves, which penetrate the object. The resonance frequency and the amplitude of the microwave resonator are measured to obtain the moisture content of the object. Several objects having known moisture contents are detected by the microwave coupling moisture content sensor to obtain corresponding resonance frequency and amplitude.

Abstract: A device includes a conductive feature, a first dielectric layer, a via, an etch stop layer, a second dielectric layer, and a conductive line. The first dielectric layer is above the conductive feature. The via is in the first dielectric layer and above the conductive feature. The etch stop layer is above the first dielectric layer. A side surface of the etch stop layer is coterminous with a sidewall of the via. The second dielectric layer is above the etch stop layer. The conductive line is in the second dielectric layer and over the via. The conductive line is in contact with the side surface of the etch stop layer and a top surface of the etch stop layer.

Abstract: The compound represented by the following formula is useful as a light-emitting material. One of R1 to R5 is CN; another is Het-LA-*; other two or three are each a carbazolyl group, etc.; and the rest are others. Het is a heteroaryl group; and LA is a single bond or an arylene group.

Abstract: The present disclosure relates to compounds capable of emitting delayed fluorescence, and uses of the compounds in organic light-emitting diodes.

Abstract: The present disclosure relates in parts to compounds capable of emitting delayed fluorescence and uses of these compounds in organic light-emitting diodes.

Abstract: The present disclosure relates to compounds of Formula (I) as useful materials for OLED's. X is O or S; Y1 to Y4 are N or R—C; at least one of R and R5 to R8 is CN or heteroaryl; and at least other one of R and R5 to R8 is diarylamino.

Abstract: The present disclosure relates to compounds of Formula (I), (II), or (III) as compounds capable of emitting delayed fluorescence, and uses of these compounds in organic light-emitting diodes.

Abstract: The present disclosure relates to compounds capable of emitting delayed fluorescence, and uses of these compounds in organic light-emitting diodes.

Abstract: The present disclosure relates to compounds capable of emitting delayed fluorescence and uses of these compounds in organic light-emitting diodes.

Abstract: A method includes forming a mask layer above a substrate. The substrate is patterned by using the mask layer as a mask to form a trench in the substrate. An isolation structure is formed in the trench, including feeding first precursors to the substrate. A bias is applied to the substrate after feeding the first precursors. With the bias turned on, second precursors are fed to the substrate. Feeding the first precursors, applying the bias, and feeding the second precursors are repeated.

Abstract: A method includes forming a dummy gate structure over a wafer. Gate spacers are formed on either side of the dummy gate structure. The dummy gate structure is removed to form a gate trench between the gate spacers. A gate dielectric layer is formed in the gate trench. A gate electrode is formed over the gate dielectric layer. Forming the gate dielectric layer includes applying a first bias to the wafer. With the first bias turned on, first precursors are fed to the wafer. The first bias is turned off. After turning off the first bias, second precursors are fed to the wafer.

Abstract: The present disclosure relates to compounds capable of emitting delayed fluorescence, and uses of the compounds in organic light-emitting diodes.

Abstract: A layer of carbon (e.g., graphite or graphene) at a metal interface (e.g., between an MEOL interconnect and a gate contact or a source or drain region contact, between an MEOL contact plug and a BEOL metallization layer, and/or between BEOL conductive structures) is used to reduce contact resistance at the metal interface, which increases electrical performance of an electronic device. Additionally, in some implementations, the layer of carbon may help prevent heat transfer from a second metal to a first metal when the second metal is deposited over the first metal. This results in more symmetric deposition of the second metal, which reduces surface roughness and contact resistance at the metal interface. As an alternative, in some implementations, the layer of carbon is etched before deposition of the second metal in order to reduce contact resistance at the metal interface.

Abstract: The present disclosure relates to compounds of Formula I) as useful materials for OLED's. X1, X2 and X3 are N or C(R5); Ar1 and Ar2 are aryl, heteroaryl or cyano; L1 is single bond, arylene or heteroarylene; and R1, R2, R3 and R4 are diarylamino, carbazolyl, heteroaryl, H or alkyl.