Patents by Inventor Hsin-Chieh Huang
Hsin-Chieh Huang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240395858Abstract: A semiconductor device includes a first channel structure extending along a first lateral direction and a second channel structure extending along the first lateral direction. The second channel structure is spaced apart from the first channel structure. The semiconductor device further includes a high-k dielectric structure extending along the first lateral direction and disposed between the first and second channel structures. The high-k dielectric structure has a bottom surface that comprises a bottommost portion and at least a first plateau portion elevated from the bottommost portion.Type: ApplicationFiled: July 30, 2024Publication date: November 28, 2024Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Hsin-Chieh Huang, Chia-Cheng Chao, Yu-Wen Wang
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Publication number: 20240371649Abstract: A method of forming a semiconductor device includes forming a first epitaxial layer over a substrate to form a wafer, depositing a dielectric layer over the first epitaxial layer, patterning the dielectric layer to form an opening, etching the first epitaxial layer through the opening to form a recess, forming a second epitaxial layer in the recess, etching the dielectric layer to expose a top surface of the first epitaxial layer, and planarizing the exposed top surface of the first epitaxial layer and a top surface of the second epitaxial layer.Type: ApplicationFiled: July 17, 2024Publication date: November 7, 2024Inventors: Che-Lun Chang, Pin-Chuan Su, Hsin-Chieh Huang, Ming-Yuan Wu, Tzu kai Lin, Yu-Wen Wang, Che-Yuan Hsu
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Publication number: 20240371779Abstract: The present disclosure relates to an integrated chip comprising a substrate. A first conductive wire is over the substrate. A second conductive wire is over the substrate and is adjacent to the first conductive wire. A first dielectric cap is laterally between the first conductive wire and the second conductive wire. The first dielectric cap laterally separates the first conductive wire from the second conductive wire. The first dielectric cap includes a first dielectric material. A first cavity is directly below the first dielectric cap and is laterally between the first conductive wire and the second conductive wire. The first cavity is defined by one or more surfaces of the first dielectric cap.Type: ApplicationFiled: July 17, 2024Publication date: November 7, 2024Inventors: Hsin-Chieh Yao, Chung-Ju Lee, Chih Wei Lu, Hsi-Wen Tien, Wei-Hao Liao, Yu-Teng Dai, Hsin-Yen Huang, Chia-Tien Wu
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Patent number: 12131911Abstract: A method of forming a semiconductor device includes forming a first epitaxial layer over a substrate to form a wafer, depositing a dielectric layer over the first epitaxial layer, patterning the dielectric layer to form an opening, etching the first epitaxial layer through the opening to form a recess, forming a second epitaxial layer in the recess, etching the dielectric layer to expose a top surface of the first epitaxial layer, and planarizing the exposed top surface of the first epitaxial layer and a top surface of the second epitaxial layer.Type: GrantFiled: June 20, 2022Date of Patent: October 29, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Che-Lun Chang, Pin-Chuan Su, Hsin-Chieh Huang, Ming-Yuan Wu, Tzu kai Lin, Yu-Wen Wang, Che-Yuan Hsu
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Patent number: 12125795Abstract: The present disclosure relates to an integrated chip comprising a substrate. A first conductive wire is over the substrate. A second conductive wire is over the substrate and is adjacent to the first conductive wire. A first dielectric cap is laterally between the first conductive wire and the second conductive wire. The first dielectric cap laterally separates the first conductive wire from the second conductive wire. The first dielectric cap includes a first dielectric material. A first cavity is directly below the first dielectric cap and is laterally between the first conductive wire and the second conductive wire. The first cavity is defined by one or more surfaces of the first dielectric cap.Type: GrantFiled: July 27, 2023Date of Patent: October 22, 2024Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Hsin-Chieh Yao, Chung-Ju Lee, Chih Wei Lu, Hsi-Wen Tien, Wei-Hao Liao, Yu-Teng Dai, Hsin-Yen Huang, Chia-Tien Wu
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Publication number: 20240304753Abstract: A semiconductor device includes a bonding structure having a top, a back opposite the top, a first side and a second side opposite the first side, wherein the first side and the second side between the top and the back; and columnar structures over the back of the bonding structure. The columnar structures include a first columnar structure nearest to the first side and a second columnar structure nearest to the second side. The semiconductor device further includes a first electrode disposed over at least portion of the columnar structures and electrically connected to at least one of the columnar structures, and a second electrode disposed over at least portion of the back of the bonding structure and electrically connected to at least one of the columnar structures.Type: ApplicationFiled: May 17, 2024Publication date: September 12, 2024Inventors: Tzu-Chieh HSU, Yi-Wen HUANG, Shou-Lung CHEN, Hsin-Kang CHEN
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Publication number: 20240266336Abstract: An embodiment is a structure including a first package including a first die, and a molding compound at least laterally encapsulating the first die, a second package bonded to the first package with a first set of conductive connectors, the second package comprising a second die, and an underfill between the first package and the second package and surrounding the first set of conductive connectors, the underfill having a first portion extending up along a sidewall of the second package, the first portion having a first sidewall, the first sidewall having a curved portion and a planar portion.Type: ApplicationFiled: April 17, 2024Publication date: August 8, 2024Inventors: Hsi-Kuei Cheng, Ching Fu Chang, Chih-Kang Han, Hsin-Chieh Huang
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Publication number: 20240241348Abstract: An image capturing system lens assembly is disclosed, comprising seven lens elements, the seven lens elements being, in order from an object side to an image side: a first lens element, a second lens element, a third lens element, a fourth lens element, a fifth lens element, a sixth lens element, and a seventh lens element. Each of the seven lens elements has an object-side surface facing the object side and an image-side surface facing the image side. An axial distance between the object-side surface of the first lens element and an image surface is TL, a focal length of the image capturing system lens assembly is f, and the following condition is satisfied: 6.00<TL/f<28.00.Type: ApplicationFiled: May 10, 2023Publication date: July 18, 2024Inventors: I-CHIEH CHEN, Hsin-Hsuan Huang, I-Hsuan Chen
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Patent number: 11990454Abstract: An embodiment is a structure including a first package including a first die, and a molding compound at least laterally encapsulating the first die, a second package bonded to the first package with a first set of conductive connectors, the second package comprising a second die, and an underfill between the first package and the second package and surrounding the first set of conductive connectors, the underfill having a first portion extending up along a sidewall of the second package, the first portion having a first sidewall, the first sidewall having a curved portion and a planar portion.Type: GrantFiled: December 14, 2020Date of Patent: May 21, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Hsi-Kuei Cheng, Ching Fu Chang, Chih-Kang Han, Hsin-Chieh Huang
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Patent number: 11984342Abstract: A method includes forming a first polymer layer to cover a metal pad of a wafer, and patterning the first polymer layer to form a first opening. A first sidewall of the first polymer layer exposed to the first opening has a first tilt angle where the first sidewall is in contact with the metal pad. The method further includes forming a metal pillar in the first opening, sawing the wafer to generate a device die, encapsulating the device die in an encapsulating material, performing a planarization to reveal the metal pillar, forming a second polymer layer over the encapsulating material and the device die, and patterning the second polymer layer to form a second opening. The metal pillar is exposed through the second opening. A second sidewall of the second polymer layer exposed to the second opening has a second tilt angle greater than the first tilt angle.Type: GrantFiled: March 15, 2021Date of Patent: May 14, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Hsi-Kuei Cheng, Ching Fu Chang, Chih-Kang Han, Hsin-Chieh Huang
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Patent number: 11948881Abstract: A semiconductor structure includes a die, a molding surrounding the die, a first dielectric layer disposed over the die and the molding, and a second dielectric layer disposed between the first dielectric layer and the die, and between the first dielectric layer and the molding. A material content ratio in the first dielectric layer is substantially greater than that in the second dielectric layer. In some embodiments, the material content ratio substantially inversely affects a mechanical strength of the first dielectric layer and the second dielectric layer.Type: GrantFiled: July 8, 2021Date of Patent: April 2, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.Inventors: Hsi-Kuei Cheng, Chih-Kang Han, Ching-Fu Chang, Hsin-Chieh Huang
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Patent number: 11901303Abstract: An integrated fan-out package including an integrated circuit, an insulating encapsulation, and a redistribution circuit structure is provided. The integrated circuit includes an antenna region. The insulating encapsulation encapsulates the integrated circuit. The redistribution circuit structure is disposed on the integrated circuit and the insulating encapsulation. The redistribution circuit structure is electrically connected to the integrated circuit, and the redistribution circuit structure includes a redistribution region and a dummy region including a plurality of dummy patterns embedded therein, wherein the antenna region includes an inductor and a wiring-free dielectric portion, and the wiring-free dielectric portion of the antenna region is between the inductor and the dummy region.Type: GrantFiled: July 25, 2022Date of Patent: February 13, 2024Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Ming-Yen Chiu, Ching-Fu Chang, Hsin-Chieh Huang
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Patent number: 11854993Abstract: An integrated fan-out package including an integrated circuit, an insulating encapsulation, and a redistribution circuit structure is provided. The integrated circuit includes an antenna region. The insulating encapsulation encapsulates the integrated circuit. The redistribution circuit structure is disposed on the integrated circuit and the insulating encapsulation. The redistribution circuit structure is electrically connected to the integrated circuit, and the redistribution circuit structure includes a redistribution region and a dummy region including a plurality of dummy patterns embedded therein, wherein the antenna region includes an inductor and a wiring-free dielectric portion, and the wiring-free dielectric portion of the antenna region is between the inductor and the dummy region.Type: GrantFiled: May 19, 2022Date of Patent: December 26, 2023Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Ming-Yen Chiu, Ching-Fu Chang, Hsin-Chieh Huang
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Publication number: 20230361181Abstract: A semiconductor device includes a substrate, at least one semiconductor fin, and at least one epitaxy structure. The semiconductor fin is present on the substrate. The semiconductor fin has at least one recess thereon. The epitaxy structure is present in the recess of the semiconductor fin. The epitaxy structure includes a topmost portion, a first portion and a second portion arranged along a direction from the semiconductor fin to the substrate. The first portion has a germanium atomic percentage higher than a germanium atomic percentage of the topmost portion and a germanium atomic percentage of the second portion.Type: ApplicationFiled: July 17, 2023Publication date: November 9, 2023Inventors: Chia-Ming Chang, Chi-Wen Liu, Cheng-Chien Li, Hsin-Chieh Huang
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Publication number: 20230335426Abstract: A method includes forming a first polymer layer to cover a metal pad of a wafer, and patterning the first polymer layer to form a first opening. A first sidewall of the first polymer layer exposed to the first opening has a first tilt angle where the first sidewall is in contact with the metal pad. The method further includes forming a metal pillar in the first opening, sawing the wafer to generate a device die, encapsulating the device die in an encapsulating material, performing a planarization to reveal the metal pillar, forming a second polymer layer over the encapsulating material and the device die, and patterning the second polymer layer to form a second opening. The metal pillar is exposed through the second opening. A second sidewall of the second polymer layer exposed to the second opening has a second tilt angle greater than the first tilt angle.Type: ApplicationFiled: June 16, 2023Publication date: October 19, 2023Inventors: Hsi-Kuei Cheng, Ching Fu Chang, Chih-Kang Han, Hsin-Chieh Huang
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Publication number: 20230326798Abstract: A manufacturing method of a semiconductor device includes forming a stack of first semiconductor layers and second semiconductor layers alternatively formed on top of one another, where a topmost layer of the stack is one of the second semiconductor layers; forming a patterned mask layer on the topmost layer of the stack; forming a trench in the stack based on the patterned mask layer to form a fin structure; forming a cladding layer extending along sidewalls of the fin structure; and removing the patterned mask layer and a portion of the cladding layer by performing a two-step etching process, where the portion of the cladding layer is removed to form cladding spacers having a concave top surface with a recess depth increasing from the sidewalls of the fin structure.Type: ApplicationFiled: April 8, 2022Publication date: October 12, 2023Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chia-Cheng Chao, Hsin-Chieh Huang, Yu-Wen Wang
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Patent number: 11749724Abstract: A semiconductor device includes a substrate, at least one semiconductor fin, and at least one epitaxy structure. The semiconductor fin is present on the substrate. The semiconductor fin has at least one recess thereon. The epitaxy structure is present in the recess of the semiconductor fin. The epitaxy structure includes a topmost portion, a first portion and a second portion arranged along a direction from the semiconductor fin to the substrate. The first portion has a germanium atomic percentage higher than a germanium atomic percentage of the topmost portion and a germanium atomic percentage of the second portion.Type: GrantFiled: May 25, 2021Date of Patent: September 5, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Chia-Ming Chang, Chi-Wen Liu, Cheng-Chien Li, Hsin-Chieh Huang
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Patent number: 11618728Abstract: An ether-bridged dication is provided with two monovalent cations bonded via a carbon chain having ether group(s). The ether-bridged dication, monovalent cations, and anions are contained together within an ionic liquid electrolyte which is applied to a charge storage device. The ether-bridged dication, the ionic liquid electrolyte, and the charge storage device have operational abilities at room temperatures or below, and a reachable working potential of 3.5 V.Type: GrantFiled: April 20, 2021Date of Patent: April 4, 2023Assignee: NATIONAL CHENG KUNG UNIVERSITYInventors: Hsisheng Teng, I-wen Sun, Hsin-Chieh Huang, Yung-Che Yen, Jui-Cheng Chang
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Patent number: D984512Type: GrantFiled: September 30, 2020Date of Patent: April 25, 2023Assignee: CHUN KUANG OPTICS CORP.Inventors: Hsin-Chieh Huang, Sheng-Jung Lin, Shun-Wen Teng
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Patent number: D984513Type: GrantFiled: September 30, 2020Date of Patent: April 25, 2023Assignee: CHUN KUANG OPTICS CORP.Inventors: Hsin-Chieh Huang, Sheng-Jung Lin, Shun-Wen Teng