Abstract: A method of manufacturing a semiconductor device includes depositing a first material on a substrate, depositing on the substrate a second material that has an etch selectivity different from an etch selectively of the first material, depositing a spacer material on the first and second material, and etching the substrate using the spacer material as an etch mask to form a fin under the first material and a fin under the second material.

Abstract: A high-speed connector assembly, a socket connector and a socket terminal are disclosed in the present invention. The socket terminal includes a first branch and a second branch, which are independent, noncoplanar, unequal-height and unequal-length. The first branch forms an arcuate part perpendicular to one wide surface of one corresponding plug terminal for being used to electrically contact with the wide surface. The second branch forms a protrusion part perpendicular to one narrow surface of the plug terminal for being used to electrically contact with the narrow surface. By this double-contact design, the high-speed connector assembly has a greater signal throughput for high-speed signals, and can construct a reliable mechanical connection between the socket terminal and the plug terminal, and has an excellent electrical contact performance.

Abstract: Methods are disclosed herein for patterning integrated circuit devices, such as fin-like field effect transistor devices. An exemplary method includes forming a material layer that includes an array of fin features, and performing a fin cut process to remove a subset of the fin features. The fin cut process includes exposing the subset of fin features using a cut pattern and removing the exposed subset of the fin features. The cut pattern partially exposes at least one fin feature of the subset of fin features. In implementations where the fin cut process is a fin cut first process, the material layer is a mandrel layer and the fin features are mandrels. In implementations where the fin cut process is a fin cut last process, the material layer is a substrate (or material layer thereof), and the fin features are fins defined in the substrate (or material layer thereof).

Abstract: A high-speed connector assembly, a socket connector and a socket terminal are disclosed in the present invention. The socket terminal includes a first branch, a second branch and a clamping port. The first branch and the second branch are independent, coplanar, unequal-height and unequal-length. The first branch has a first protrusion formed by stamping and protruding toward the clamping port; and the second branch has a second protrusion formed by stamping and protruding toward the clamping port. The first protrusion and the second protrusion can clamp two opposite surfaces of a plug terminal to form double contacts between the socket terminal and the plug terminal, thereby improving a signal throughput of the high-speed connector assembly, constructing a reliable mechanical connection between the socket terminal and the plug terminal, and ensuring an excellent electrical contact performance between the both.

Abstract: A high density connector and a wafer group are disclosed in this invention. The high density connector includes an insulating housing, which forms a guide bracket to provide a guiding and locking function for a plug connector. The wafer group includes two signal wafers and a grounding wafer, which are adjacent to be arranged. The two adjacent signal wafers make up a group. Signal terminals of the two adjacent signal wafers can form multiple differential pairs in an edge-coupled manner, thereby reducing the loss of signal transmission and improving the quality of differential signal transmission.

Abstract: A method of manufacturing a semiconductor device includes depositing a first material on a substrate, depositing on the substrate a second material that has an etch selectivity different from an etch selectively of the first material, depositing a spacer material on the first and second material, and etching the substrate using the spacer material as an etch mask to form a fin under the first material and a fin under the second material.

Abstract: Methods are disclosed herein for patterning integrated circuit devices, such as fin-like field effect transistor devices. An exemplary method includes forming a material layer that includes an array of fin features, and performing a fin cut process to remove a subset of the fin features. The fin cut process includes exposing the subset of fin features using a cut pattern and removing the exposed subset of the fin features. The cut pattern partially exposes at least one fin feature of the subset of fin features. In implementations where the fin cut process is a fin cut first process, the material layer is a mandrel layer and the fin features are mandrels. In implementations where the fin cut process is a fin cut last process, the material layer is a substrate (or material layer thereof), and the fin features are fins defined in the substrate (or material layer thereof).

Abstract: A wafer group and a signal terminal assembly are disclosed in this invention. The wafer group includes a first wafer and a second wafer, which are arranged side by side. The first wafer is a signal wafer and includes a first frame and multiple first signal terminals supported by the first frame. The second wafer is a signal wafer and includes a second frame and multiple second signal terminals supported by the second frame. A first middle portion of each first signal terminal and a second middle portion of the corresponding second signal terminal are configured to be coupled together in an edge-coupled manner, thereby reducing the loss of signal transmission and improving the quality of differential signal transmission.

Abstract: A high density connector and a wafer group are disclosed in this invention. The high density connector includes an insulating housing, which forms a guide bracket to provide a guiding and locking function for a plug connector. The wafer group includes two signal wafers and a grounding wafer, which are adjacent to be arranged. The two adjacent signal wafers make up a group. Signal terminals of the two adjacent signal wafers can form multiple differential pairs in an edge-coupled manner, thereby reducing the loss of signal transmission and improving the quality of differential signal transmission.

Abstract: A printer may include a printhead assembly, a clutch assembly, and/or a printer ribbon transport assembly. An example clutch assembly includes a first spool engagement member defining a first friction torque; a first friction member configured to frictionally engage the first spool engagement member; a second spool engagement member defining a second friction torque that is larger than the first fiction torque; and a second friction member configured to frictionally engage the second spool engagement member.

Abstract: Methods are disclosed herein for patterning integrated circuit devices, such as fin-like field effect transistor devices. An exemplary method includes forming a material layer that includes an array of fin features, and performing a fin cut process to remove a subset of the fin features. The fin cut process includes exposing the subset of fin features using a cut pattern and removing the exposed subset of the fin features. The cut pattern partially exposes at least one fin feature of the subset of fin features. In implementations where the fin cut process is a fin cut first process, the material layer is a mandrel layer and the fin features are mandrels. In implementations where the fin cut process is a fin cut last process, the material layer is a substrate (or material layer thereof), and the fin features are fins defined in the substrate (or material layer thereof).

Abstract: A method of manufacturing a semiconductor device includes depositing a first material on a substrate, depositing on the substrate a second material that has an etch selectivity different from an etch selectively of the first material, depositing a spacer material on the first and second material, and etching the substrate using the spacer material as an etch mask to form a fin under the first material and a fin under the second material.

Abstract: A double-sided pluggable combination structure is disclosed in this invention, which includes a double-sided pluggable power plug and a double-sided pluggable power socket. When the power plug and the power socket are engaged with each other, an insertion part of the power socket can enter into a receiving cavity from a plug port of the power plug by an obverse insertion mode or a reverse insertion mode, and each plug terminal of the power plug can be inserted into an insertion hole from a corresponding socket port of the power socket. An engaged portion of the plug terminal can be clamped by elastic arms of a socket terminal, thereby forming a stable electric contact between the plug terminal and the socket terminal.

Abstract: A double-sided pluggable combination structure is disclosed in this invention, which includes a double-sided pluggable power plug and a double-sided pluggable power socket. When the power plug and the power socket are engaged with each other, an insertion part of the power socket can enter into a receiving cavity from a plug port of the power plug by an obverse insertion mode or a reverse insertion mode, and each plug terminal of the power plug can be inserted into an insertion hole from a corresponding socket port of the power socket. An engaged portion of the plug terminal can be clamped by elastic arms of a socket terminal, thereby forming a stable electric contact between the plug terminal and the socket terminal.

Abstract: A method includes forming an isolation feature in a semiconductor substrate; forming a first fin-like active region and a second fin-like active region in the semiconductor substrate and interposed by the isolation feature; forming a dummy gate stack on the isolation feature, wherein the dummy gate extends to the first fin-like active region from one side and to the second fin-like active region from another side.

Abstract: A high speed connector assembly is disclosed in this invention, including a receptacle connector and a plug connector. Two first L-shaped contact pieces of each pair of differential signal receptacle terminals are configured to be splayed apart, and two second L-shaped contact pieces of each pair of differential signal plug terminals are configured to be splayed apart too. When the receptacle connector and the plug connector are engaged with each other, a second extending section of the differential signal plug terminal is pressed onto a first side edge of the differential signal receptacle terminal, and a first extending section of the differential signal receptacle terminal is pressed onto a second side edge of the differential signal plug terminal, thereby forming a stable electrical contact therebetween.

Abstract: A pluggable connector with anti-electromagnetic interference capability is disclosed in this invention, which includes a socket housing, multiple terminal assemblies and a shielding case. The socket housing includes an insulating base and an anti-EMI block. The insulating base and the anti-EMI block can be combined together to form an upper circuit board slot and a lower circuit board slot. These terminal assemblies are mounted in the socket housing and include multiple signal terminal assemblies and multiple ground terminal assemblies, which are arranged side by side in the order of ground-signal-signal. The shielding case has an upper port and a lower port, which are respectively aligned with the upper circuit board slot and the lower circuit board slot. The pluggable connector of the present invention has a good anti-electromagnetic interference capability by an anti-EMI block.

Abstract: A high speed connector assembly is disclosed in this invention, including a receptacle connector and a plug connector. Two first L-shaped contact pieces of each pair of differential signal receptacle terminals are configured to be splayed apart, and two second L-shaped contact pieces of each pair of differential signal plug terminals are configured to be splayed apart too. When the receptacle connector and the plug connector are engaged with each other, a second extending section of the differential signal plug terminal is pressed onto a first side edge of the differential signal receptacle terminal, and a first extending section of the differential signal receptacle terminal is pressed onto a second side edge of the differential signal plug terminal, thereby forming a stable electrical contact therebetween.